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    Interconnect structure with an oxygen-doped SiC antireflective coating and method of fabrication
    1.
    发明授权
    Interconnect structure with an oxygen-doped SiC antireflective coating and method of fabrication 有权
    具有氧掺杂的SiC抗反射涂层的互连结构和制造方法

    公开(公告)号：US08373271B2

    公开(公告)日：2013-02-12

    申请号：US12788912

    申请日：2010-05-27

    申请人： Dario L. Goldfarb ,  Ranee W. Kwong ,  Qinghuang Lin ,  Deborah A. Neumayer ,  Hosadurga Shobha

    发明人： Dario L. Goldfarb ,  Ranee W. Kwong ,  Qinghuang Lin ,  Deborah A. Neumayer ,  Hosadurga Shobha

    IPC分类号： H01L23/532

    CPC分类号： H01L21/76802 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/76808 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53271 ,  H01L23/53276 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： An interconnect structure is provided that includes at least one patterned and cured photo-patternable low k material located on a surface of a patterned and cured oxygen-doped SiC antireflective coating (ARC). A conductively filled region is located within the at least one patterned and cured photo-patternable low k material and the patterned and cured oxygen-doped SiC ARC. The oxygen-doped SiC ARC, which is a thin layer (i.e., less than 400 angstroms), does not produce standing waves that may degrade the diffusion barrier and the electrically conductive feature that are embedded within the patterned and cured photo-patternable low k dielectric material and, as such, structural integrity is maintained. Furthermore, since a thin oxygen-doped SiC ARC is employed, the plasma etch process time used to open the material stack of the ARC/dielectric cap can be reduced, thus reducing potential plasma damage to the patterned and cured photo-patternable low k material. Also, the oxygen-doped SiC ARC can withstand current BEOL processing conditions.

    摘要翻译： 提供了一种互连结构，其包括位于图案化和固化的氧掺杂的SiC抗反射涂层（ARC）的表面上的至少一个图案化和固化的可光图案化的低k材料。 导电填充区域位于至少一个图案化和固化的可光图案化低k材料和图案化和固化的氧掺杂SiC ARC内。 作为薄层（即，小于400埃）的氧掺杂SiC ARC不产生可能降解扩散阻挡层和嵌入图案化和固化的可光图案化低k内的导电特征的驻波 介电材料，因此，维持结构完整性。 此外，由于采用薄的氧掺杂SiC ARC，所以可以减少用于打开ARC /电介质盖的材料堆叠的等离子体蚀刻处理时间，从而减少图案化和固化的可光图案化的低k材料的潜在的等离子体损伤 。 此外，氧掺杂的SiC ARC可以承受当前的BEOL加工条件。

    INTERCONNECT STRUCTURE WITH AN OXYGEN-DOPED SiC ANTIREFLECTIVE COATING AND METHOD OF FABRICATION
    2.
    发明申请
    INTERCONNECT STRUCTURE WITH AN OXYGEN-DOPED SiC ANTIREFLECTIVE COATING AND METHOD OF FABRICATION 有权
    与OXYGEN-DOPED SiC抗反射涂层的互连结构及制造方法

    公开(公告)号：US20110291284A1

    公开(公告)日：2011-12-01

    申请号：US12788912

    申请日：2010-05-27

    申请人： Dario L. Goldfarb ,  Ranee W. Kwong ,  Qinghuang Lin ,  Deborah A. Neumayer ,  Hosadurga Shobha

    发明人： Dario L. Goldfarb ,  Ranee W. Kwong ,  Qinghuang Lin ,  Deborah A. Neumayer ,  Hosadurga Shobha

    IPC分类号： H01L23/522 ,  H01L21/768

    CPC分类号： H01L21/76802 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/76808 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53271 ,  H01L23/53276 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： An interconnect structure is provided that includes at least one patterned and cured photo-patternable low k material located on a surface of a patterned and cured oxygen-doped SiC antireflective coating (ARC). A conductively filled region is located within the at least one patterned and cured photo-patternable low k material and the patterned and cured oxygen-doped SiC ARC. The oxygen-doped SiC ARC, which is a thin layer (i.e., less than 400 angstroms), does not produce standing waves that may degrade the diffusion barrier and the electrically conductive feature that are embedded within the patterned and cured photo-patternable low k dielectric material and, as such, structural integrity is maintained. Furthermore, since a thin oxygen-doped SiC ARC is employed, the plasma etch process time used to open the material stack of the ARC/dielectric cap can be reduced, thus reducing potential plasma damage to the patterned and cured photo-patternable low k material. Also, the oxygen-doped SiC ARC can withstand current BEOL processing conditions.

    摘要翻译： 提供了一种互连结构，其包括位于图案化和固化的氧掺杂的SiC抗反射涂层（ARC）的表面上的至少一个图案化和固化的可光图案化的低k材料。 导电填充区域位于至少一个图案化和固化的可光图案化低k材料和图案化和固化的氧掺杂SiC ARC内。 作为薄层（即，小于400埃）的氧掺杂SiC ARC不产生可能降解扩散阻挡层和嵌入图案化和固化的可光图案化低k内的导电特征的驻波 介电材料，因此，维持结构完整性。 此外，由于采用薄氧掺杂SiC ARC，因此可以减少用于打开ARC /电介质盖的材料堆叠的等离子体蚀刻工艺时间，从而减少图案化和固化的可光图案化低k材料的潜在等离子体损伤 。 此外，氧掺杂的SiC ARC可以承受当前的BEOL加工条件。

    REMOVAL OF ALKALINE CRYSTAL DEFECTS IN LITHOGRAPHIC PATTERNING
    3.
    发明申请
    REMOVAL OF ALKALINE CRYSTAL DEFECTS IN LITHOGRAPHIC PATTERNING 有权
    去除岩石中的碱性晶体缺陷

    公开(公告)号：US20130052593A1

    公开(公告)日：2013-02-28

    申请号：US13221248

    申请日：2011-08-30

    申请人： Javier J. Perez ,  Dario L. Goldfarb ,  Ranee W. Kwong ,  Libor Vyklicky

    发明人： Javier J. Perez ,  Dario L. Goldfarb ,  Ranee W. Kwong ,  Libor Vyklicky

    IPC分类号： G03F7/20

    CPC分类号： G03F7/405

    摘要： An adhesion promoter layer is formed on a surface of a substrate as an adhesion promoter layer, on which a photoresist is applied. The photoresist is lithographically exposed. Soluble portions of the lithographically exposed photoresist are dissolved in a developer solution including tetraalkylammonium hydroxide. Tetraalkylammonium hydroxide salts are formed in crystalline forms on surfaces of the substrate. A water-soluble acidic polymer layer is applied over the surfaces of the substrate to dissolve the tetraalkylammonium hydroxide salts. The water-soluble acidic polymer layer is rinsed off by water, thereby providing clean surfaces that do not include the tetraalkylammonium hydroxide salts on the substrate. Subsequent processes can be performed on the substrate, which is covered by remaining portions of the developed photoresist and has clean surfaces in regions not covered by the photoresist.

    摘要翻译： 在基材的表面上形成粘合促进剂层作为粘合促进剂层，在其上施加光致抗蚀剂。 光致抗蚀剂被光刻曝光。 将光刻曝光的光致抗蚀剂的可溶部分溶解在包括四烷基氢氧化铵的显影剂溶液中。 四烷基氢氧化铵盐以结晶形式形成在基材的表面上。 将水溶性酸性聚合物层施加在基材的表面上以溶解四烷基氢氧化铵盐。 将水溶性酸性聚合物层用水冲洗掉，由此提供在基材上不包括四烷基氢氧化铵盐的清洁表面。 随后的工艺可以在衬底上进行，其被显影的光致抗蚀剂的剩余部分覆盖，并且在未被光致抗蚀剂覆盖的区域中具有清洁的表面。

    Removal of alkaline crystal defects in lithographic patterning
    4.
    发明授权
    Removal of alkaline crystal defects in lithographic patterning 有权
    去除光刻图案中的碱性晶体缺陷

    公开(公告)号：US09012133B2

    公开(公告)日：2015-04-21

    申请号：US13221248

    申请日：2011-08-30

    申请人： Javier J. Perez ,  Dario L. Goldfarb ,  Ranee W. Kwong ,  Libor Vyklicky

    发明人： Javier J. Perez ,  Dario L. Goldfarb ,  Ranee W. Kwong ,  Libor Vyklicky

    IPC分类号： G03F7/32 ,  G03F7/40

    CPC分类号： G03F7/405

    摘要： An adhesion promoter layer is formed on a surface of a substrate as an adhesion promoter layer, on which a photoresist is applied. The photoresist is lithographically exposed. Soluble portions of the lithographically exposed photoresist are dissolved in a developer solution including tetraalkylammonium hydroxide. Tetraalkylammonium hydroxide salts are formed in crystalline forms on surfaces of the substrate. A water-soluble acidic polymer layer is applied over the surfaces of the substrate to dissolve the tetraalkylammonium hydroxide salts. The water-soluble acidic polymer layer is rinsed off by water, thereby providing clean surfaces that do not include the tetraalkylammonium hydroxide salts on the substrate. Subsequent processes can be performed on the substrate, which is covered by remaining portions of the developed photoresist and has clean surfaces in regions not covered by the photoresist.

    摘要翻译： 在基材的表面上形成粘合促进剂层作为粘合促进剂层，在其上施加光致抗蚀剂。 光致抗蚀剂被光刻曝光。 将光刻曝光的光致抗蚀剂的可溶部分溶解在包括四烷基氢氧化铵的显影剂溶液中。 四烷基氢氧化铵盐以结晶形式形成在基材的表面上。 将水溶性酸性聚合物层施加在基材的表面上以溶解四烷基氢氧化铵盐。 将水溶性酸性聚合物层用水冲洗掉，由此提供在基材上不包括四烷基氢氧化铵盐的清洁表面。 随后的工艺可以在衬底上进行，其被显影的光致抗蚀剂的剩余部分覆盖，并且在未被光致抗蚀剂覆盖的区域中具有清洁的表面。

    Photoresist system and process for aerial image enhancement
    10.
    发明授权
    Photoresist system and process for aerial image enhancement 失效
    光刻胶系统和航空图像增强工艺

    公开(公告)号：US06245492B1

    公开(公告)日：2001-06-12

    申请号：US09133204

    申请日：1998-08-13

    申请人： Wu-Song Huang ,  Ahmad D. Katnani ,  Ranee W. Kwong ,  Kathleen H. Martinek

    发明人： Wu-Song Huang ,  Ahmad D. Katnani ,  Ranee W. Kwong ,  Kathleen H. Martinek

    IPC分类号： G03C500

    CPC分类号： G03F7/2022

    摘要： Improved resolution of lithographic patterns can be obtained using a double exposure process where a resist layer is subjected to a patternwise first exposure followed by a blanket second exposure. The resist composition preferably contains a chemically amplified resist which undergoes significant shrinkage on exposure to radiation, a chemically amplified resist which contains a photo-bleachable component, or a chemically amplified resist which contains a chemical-bleachable component.

    摘要翻译： 可以使用双重曝光工艺获得光刻图案的改进的分辨率，其中抗蚀剂层经受图案化的第一次曝光，然后进行第二曝光。 抗蚀剂组合物优选含有在暴露于辐射下经受显着收缩的化学放大抗蚀剂，含有可光漂白组分的化学放大抗蚀剂或含有化学可漂白组分的化学放大抗蚀剂。