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1.发明授权Semiconductor devices with asymmetric halo implantation and method of manufacture 有权具有不对称光晕植入的半导体器件及其制造方法公开(公告)号：US08877596B2
公开(公告)日：2014-11-04
申请号：US12822426
申请日：2010-06-24
申请人： Darshana N. Bhagat , Thomas J. Dunbar , Yen Li Lim , Jed H. Rankin , Eva A. Shah
发明人： Darshana N. Bhagat , Thomas J. Dunbar , Yen Li Lim , Jed H. Rankin , Eva A. Shah
IPC分类号： H01L21/265 , H01L21/8238 , H01L29/78 , H01L21/425
CPC分类号： H01L29/7835 , H01L21/26513 , H01L21/26586 , H01L21/266 , H01L21/823807 , H01L29/7833
摘要： a method comprises forming a hardmask over one or more gate structures. The method further comprises forming a photoresist over the hardmask. The method further comprises forming an opening in the photoresist over at least one of the gate structures. The method further comprises stripping the hardmask that is exposed in the opening and which is over the at least one of the gate structures. The method further comprises removing the photoresist. The method further comprises providing a halo implant on a side of the at least one of the gate structures.
摘要翻译： 一种方法包括在一个或多个栅极结构上形成硬掩模。 该方法还包括在硬掩模上形成光致抗蚀剂。 该方法还包括在至少一个栅极结构上的光致抗蚀剂中形成开口。 该方法还包括剥离暴露在开口中且位于至少一个栅极结构之上的硬掩模。 该方法还包括去除光致抗蚀剂。 该方法还包括在所述至少一个栅极结构的一侧上提供晕轮植入物。
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2.发明授权Locally tailoring chemical mechanical polishing (CMP) polish rate for dielectrics 有权局部定制化学机械抛光（CMP）抛光率的电介质公开(公告)号：US08637403B2
公开(公告)日：2014-01-28
申请号：US13323093
申请日：2011-12-12
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31053 , H01L21/3105 , H01L21/31155 , H01L21/76819 , H01L21/76823 , H01L21/76825 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor structure includes varying local chemical mechanical polishing (CMP) abrading rates of an insulator film by selectively varying a carbon content of the insulator film.
摘要翻译： 制造半导体结构的方法包括通过选择性地改变绝缘体膜的碳含量来改变绝缘体膜的局部化学机械抛光（CMP）研磨速率。
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公开(公告)号：US20100248479A1
公开(公告)日：2010-09-30
申请号：US12415406
申请日：2009-03-31
IPC分类号： H01L21/304
CPC分类号： H01L21/3212 , C09G1/02
摘要： The instant invention is a method of polishing a substrate including contacting a substrate having at least one metal layer including copper with a chemical-mechanical polishing composition. The CMP composition includes an abrasive, a surfactant, an oxidizer, an organic acid including polyacrylic acid or polymethacrylic acid, a corrosion inhibitor, and a liquid carrier. A portion of the copper in the metal layer is abraded to polish the substrate. A second CMP composition contacts the abraded substrate, the second acrylate free composition including an abrasive, a surfactant, an oxidizer, and a corrosion inhibitor, and a liquid carrier. Any dendrites that may have formed on the substrate are removed through abrasion.
摘要翻译： 本发明是抛光衬底的方法，包括使具有至少一个包含铜的金属层的衬底与化学机械抛光组合物接触。 CMP组合物包括研磨剂，表面活性剂，氧化剂，包括聚丙烯酸或聚甲基丙烯酸的有机酸，腐蚀抑制剂和液体载体。 金属层中的铜的一部分被磨损以抛光基底。 第二CMP组合物接触研磨的基材，第二无丙烯酸酯组合物包含研磨剂，表面活性剂，氧化剂和腐蚀抑制剂以及液体载体。 可能通过磨损去除可能在基底上形成的任何枝晶。
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公开(公告)号：US08575022B2
公开(公告)日：2013-11-05
申请号：US13304772
申请日：2011-11-28
申请人： Gregory S. Chrisman , Edward C. Cooney, III , Jeffrey P. Gambino , Zhong-Xiang He , Thomas L. McDevitt , Eva A. Shah
发明人： Gregory S. Chrisman , Edward C. Cooney, III , Jeffrey P. Gambino , Zhong-Xiang He , Thomas L. McDevitt , Eva A. Shah
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L23/562 , H01L21/7684 , H01L21/76883 , H01L23/5227 , H01L23/5283 , H01L2924/0002 , H01L2924/00
摘要： A structure and method for fabricating the structure that provides a metal wire having a first height at an upper surface. An insulating material surrounding said metal wire is etched to a second height below said first height of said upper surface. The metal wire from said upper surface, after etching said insulating material, is planarized to remove sufficient material from a lateral edge portion of said metal wire such that a height of said lateral edge portion is equivalent to said second height of said insulating material surrounding said metal wire.
摘要翻译： 一种用于制造提供在上表面具有第一高度的金属线的结构的结构和方法。 围绕所述金属线的绝缘材料被蚀刻到所述上表面的所述第一高度以下的第二高度。 在蚀刻所述绝缘材料之后，来自所述上表面的金属线被平坦化以从所述金属线的横向边缘部分去除足够的材料，使得所述侧边缘部分的高度等于围绕所述绝缘材料的所述绝缘材料的所述第二高度 金属丝。
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公开(公告)号：US09057004B2
公开(公告)日：2015-06-16
申请号：US13241383
申请日：2011-09-23
申请人： Graham M. Bates , Michael T. Brigham , Joseph K. Comeau , Jason P. Ritter , Matthew T. Tiersch , Eva A. Shah , Eric J. White
发明人： Graham M. Bates , Michael T. Brigham , Joseph K. Comeau , Jason P. Ritter , Matthew T. Tiersch , Eva A. Shah , Eric J. White
IPC分类号： C09G1/02 , H01L21/321 , C09K3/14 , H01L21/768 , C11D11/00
CPC分类号： C09G1/04 , C09G1/02 , C09K3/1463 , C09K3/1472 , C11D11/0047 , H01L21/3212 , H01L21/7684
摘要： A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.
摘要翻译： 化学机械抛光的组合物和方法。 组合物包括表面活性剂阴离子烷基醇和稀释剂。 组合物还包括研磨颗粒和氧化剂。 该方法包括在要抛光的表面上提供该组合物，并通过使该表面与抛光垫接触来抛光该表面。
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公开(公告)号：US08734665B2
公开(公告)日：2014-05-27
申请号：US13271494
申请日：2011-10-12
申请人： Graham M. Bates , Michael T. Brigham , Joseph K. Comeau , Jason P. Ritter , Eva A. Shah , Matthew T. Tiersch , Eric J. White
发明人： Graham M. Bates , Michael T. Brigham , Joseph K. Comeau , Jason P. Ritter , Eva A. Shah , Matthew T. Tiersch , Eric J. White
IPC分类号： B44C1/22
CPC分类号： C09K3/1463 , C09G1/02 , C09K3/1472 , H01L21/3212 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol, a controlled amount of chloride ion source and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.
摘要翻译： 化学机械抛光的组合物和方法。 组合物包括表面活性剂阴离子烷基醇，受控量的氯离子源和稀释剂。 组合物还包括研磨颗粒和氧化剂。 该方法包括在要抛光的表面上提供该组合物，并通过使该表面与抛光垫接触来抛光该表面。
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公开(公告)号：US20130133919A1
公开(公告)日：2013-05-30
申请号：US13304772
申请日：2011-11-28
申请人： Gregory S. Chrisman , Edward C. Cooney, III , Jeffrey P. Gambino , Zhong-Xiang He , Thomas L. McDevitt , Eva A. Shah
发明人： Gregory S. Chrisman , Edward C. Cooney, III , Jeffrey P. Gambino , Zhong-Xiang He , Thomas L. McDevitt , Eva A. Shah
CPC分类号： H01L23/562 , H01L21/7684 , H01L21/76883 , H01L23/5227 , H01L23/5283 , H01L2924/0002 , H01L2924/00
摘要： A structure and method for fabricating the structure that provides a metal wire having a first height at an upper surface. An insulating material surrounding said metal wire is etched to a second height below said first height of said upper surface. The metal wire from said upper surface, after etching said insulating material, is planarized to remove sufficient material from a lateral edge portion of said metal wire such that a height of said lateral edge portion is equivalent to said second height of said insulating material surrounding said metal wire.
摘要翻译： 一种用于制造提供在上表面具有第一高度的金属线的结构的结构和方法。 围绕所述金属线的绝缘材料被蚀刻到所述上表面的所述第一高度以下的第二高度。 在蚀刻所述绝缘材料之后，来自所述上表面的金属线被平坦化以从所述金属线的横向边缘部分去除足够的材料，使得所述侧边缘部分的高度等于围绕所述绝缘材料的所述绝缘材料的所述第二高度 金属丝。
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公开(公告)号：US20130078811A1
公开(公告)日：2013-03-28
申请号：US13241383
申请日：2011-09-23
申请人： Graham M. Bates , Michael T. Brigham , Joseph K. Comeau , Jason P. Ritter , Matthew T. Tiersch , Eva A. Shah , Eric J. White
发明人： Graham M. Bates , Michael T. Brigham , Joseph K. Comeau , Jason P. Ritter , Matthew T. Tiersch , Eva A. Shah , Eric J. White
IPC分类号： H01L21/306 , C09K13/00
CPC分类号： C09G1/04 , C09G1/02 , C09K3/1463 , C09K3/1472 , C11D11/0047 , H01L21/3212 , H01L21/7684
摘要： A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.
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公开(公告)号：US08088690B2
公开(公告)日：2012-01-03
申请号：US12415406
申请日：2009-03-31
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/3212 , C09G1/02
摘要： The instant invention is a method of polishing a substrate including contacting a substrate having at least one metal layer including copper with a chemical-mechanical polishing composition. The CMP composition includes an abrasive, a surfactant, an oxidizer, an organic acid including polyacrylic acid or polymethacrylic acid, a corrosion inhibitor, and a liquid carrier. A portion of the copper in the metal layer is abraded to polish the substrate. A second CMP composition contacts the abraded substrate, the second acrylate free composition including an abrasive, a surfactant, an oxidizer, and a corrosion inhibitor, and a liquid carrier. Any dendrites that may have formed on the substrate are removed through abrasion.
摘要翻译： 本发明是抛光衬底的方法，包括使具有至少一个包含铜的金属层的衬底与化学机械抛光组合物接触。 CMP组合物包括研磨剂，表面活性剂，氧化剂，包括聚丙烯酸或聚甲基丙烯酸的有机酸，缓蚀剂和液体载体。 金属层中的铜的一部分被磨损以抛光基底。 第二CMP组合物接触研磨的基材，第二无丙烯酸酯组合物包含研磨剂，表面活性剂，氧化剂和腐蚀抑制剂以及液体载体。 可能通过磨损去除可能在基底上形成的任何枝晶。
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公开(公告)号：US20130092651A1
公开(公告)日：2013-04-18
申请号：US13271494
申请日：2011-10-12
申请人： Graham M. Bates , Michael T. Brigham , Joseph K. Comeau , Jason P. Ritter , Eva A. Shah , Matthew T. Tiersch , Eric J. White
发明人： Graham M. Bates , Michael T. Brigham , Joseph K. Comeau , Jason P. Ritter , Eva A. Shah , Matthew T. Tiersch , Eric J. White
CPC分类号： C09K3/1463 , C09G1/02 , C09K3/1472 , H01L21/3212 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol, a controlled amount of chloride ion source and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.
摘要翻译： 化学机械抛光的组合物和方法。 组合物包括表面活性剂阴离子烷基醇，受控量的氯离子源和稀释剂。 组合物还包括研磨颗粒和氧化剂。 该方法包括在要抛光的表面上提供该组合物，并通过使该表面与抛光垫接触来抛光该表面。
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