公开(公告)号：US08575022B2

公开(公告)日：2013-11-05

申请号：US13304772

申请日：2011-11-28

申请人： Gregory S. Chrisman ,  Edward C. Cooney, III ,  Jeffrey P. Gambino ,  Zhong-Xiang He ,  Thomas L. McDevitt ,  Eva A. Shah

发明人： Gregory S. Chrisman ,  Edward C. Cooney, III ,  Jeffrey P. Gambino ,  Zhong-Xiang He ,  Thomas L. McDevitt ,  Eva A. Shah

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L23/562 ,  H01L21/7684 ,  H01L21/76883 ,  H01L23/5227 ,  H01L23/5283 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure and method for fabricating the structure that provides a metal wire having a first height at an upper surface. An insulating material surrounding said metal wire is etched to a second height below said first height of said upper surface. The metal wire from said upper surface, after etching said insulating material, is planarized to remove sufficient material from a lateral edge portion of said metal wire such that a height of said lateral edge portion is equivalent to said second height of said insulating material surrounding said metal wire.

摘要翻译： 一种用于制造提供在上表面具有第一高度的金属线的结构的结构和方法。 围绕所述金属线的绝缘材料被蚀刻到所述上表面的所述第一高度以下的第二高度。 在蚀刻所述绝缘材料之后，来自所述上表面的金属线被平坦化以从所述金属线的横向边缘部分去除足够的材料，使得所述侧边缘部分的高度等于围绕所述绝缘材料的所述绝缘材料的所述第二高度 金属丝。

公开(公告)号：US20130133919A1

公开(公告)日：2013-05-30

申请号：US13304772

申请日：2011-11-28

申请人： Gregory S. Chrisman ,  Edward C. Cooney, III ,  Jeffrey P. Gambino ,  Zhong-Xiang He ,  Thomas L. McDevitt ,  Eva A. Shah

发明人： Gregory S. Chrisman ,  Edward C. Cooney, III ,  Jeffrey P. Gambino ,  Zhong-Xiang He ,  Thomas L. McDevitt ,  Eva A. Shah

IPC分类号： H01B3/10 ,  H01B7/00 ,  H01B19/00

CPC分类号： H01L23/562 ,  H01L21/7684 ,  H01L21/76883 ,  H01L23/5227 ,  H01L23/5283 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure and method for fabricating the structure that provides a metal wire having a first height at an upper surface. An insulating material surrounding said metal wire is etched to a second height below said first height of said upper surface. The metal wire from said upper surface, after etching said insulating material, is planarized to remove sufficient material from a lateral edge portion of said metal wire such that a height of said lateral edge portion is equivalent to said second height of said insulating material surrounding said metal wire.

摘要翻译： 一种用于制造提供在上表面具有第一高度的金属线的结构的结构和方法。 围绕所述金属线的绝缘材料被蚀刻到所述上表面的所述第一高度以下的第二高度。 在蚀刻所述绝缘材料之后，来自所述上表面的金属线被平坦化以从所述金属线的横向边缘部分去除足够的材料，使得所述侧边缘部分的高度等于围绕所述绝缘材料的所述绝缘材料的所述第二高度 金属丝。

公开(公告)号：US08604618B2

公开(公告)日：2013-12-10

申请号：US13239533

申请日：2011-09-22

申请人： Edward C. Cooney, III ,  Jeffrey P. Gambino ,  Zhong-Xiang He ,  Xiao Hu Liu ,  Thomas L. McDevitt ,  Gary L. Milo ,  William J. Murphy

发明人： Edward C. Cooney, III ,  Jeffrey P. Gambino ,  Zhong-Xiang He ,  Xiao Hu Liu ,  Thomas L. McDevitt ,  Gary L. Milo ,  William J. Murphy

IPC分类号： H01L23/485 ,  H01L21/3205

CPC分类号： H01L21/76802 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53295 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and a method of fabricating the same, includes vertically stacked layers on an insulator. Each of the layers includes a first dielectric insulator portion, a first metal conductor embedded within the first dielectric insulator portion, a first nitride cap covering the first metal conductor, a second dielectric insulator portion, a second metal conductor embedded within the second dielectric insulator portion, and a second nitride cap covering the second metal conductor. The first and second metal conductors form first vertically stacked conductor layers and second vertically stacked conductor layers. The first vertically stacked conductor layers are proximate the second vertically stacked conductor layers, and at least one air gap is positioned between the first vertically stacked conductor layers and the second vertically stacked conductor layers. An upper semiconductor layer covers the first vertically stacked conductor layers, the air gap and the second plurality of vertically stacked conductor layers.

摘要翻译： 半导体器件及其制造方法包括在绝缘体上的垂直堆叠的层。 每个层包括第一介电绝缘体部分，嵌入在第一介电绝缘体部分内的第一金属导体，覆盖第一金属导体的第一氮化物帽，第二电介质绝缘体部分，嵌入在第二介电绝缘体部分内的第二金属导体 以及覆盖所述第二金属导体的第二氮化物帽。 第一和第二金属导体形成第一垂直堆叠的导体层和第二垂直堆叠的导体层。 第一垂直堆叠的导体层靠近第二垂直堆叠的导体层，并且至少一个气隙位于第一垂直堆叠的导体层和第二垂直堆叠的导体层之间。 上半导体层覆盖第一垂直堆叠的导体层，气隙和第二多个垂直堆叠的导体层。

公开(公告)号：US20130075913A1

公开(公告)日：2013-03-28

申请号：US13239533

申请日：2011-09-22

申请人： Edward C. Cooney, III ,  Jeffrey P. Gambino ,  Zhong-Xiang He ,  Xiao Hu Liu ,  Thomas L. McDevitt ,  Gary L. Milo ,  William J. Murphy

发明人： Edward C. Cooney, III ,  Jeffrey P. Gambino ,  Zhong-Xiang He ,  Xiao Hu Liu ,  Thomas L. McDevitt ,  Gary L. Milo ,  William J. Murphy

IPC分类号： H01L23/485 ,  H01L21/3205

CPC分类号： H01L21/76802 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53295 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and a method of fabricating the same, includes vertically stacked layers on an insulator. Each of the layers includes a first dielectric insulator portion, a first metal conductor embedded within the first dielectric insulator portion, a first nitride cap covering the first metal conductor, a second dielectric insulator portion, a second metal conductor embedded within the second dielectric insulator portion, and a second nitride cap covering the second metal conductor. The first and second metal conductors form first vertically stacked conductor layers and second vertically stacked conductor layers. The first vertically stacked conductor layers are proximate the second vertically stacked conductor layers, and at least one air gap is positioned between the first vertically stacked conductor layers and the second vertically stacked conductor layers. An upper semiconductor layer covers the first vertically stacked conductor layers, the air gap and the second plurality of vertically stacked conductor layers.

公开(公告)号：US07015150B2

公开(公告)日：2006-03-21

申请号：US10709747

申请日：2004-05-26

申请人： Edward C. Cooney, III ,  John A. Fitzsimmons ,  Jeffrey P. Gambino ,  Stephen E. Luce ,  Thomas L. McDevitt ,  Lee M. Nicholson ,  Anthony K. Stamper

发明人： Edward C. Cooney, III ,  John A. Fitzsimmons ,  Jeffrey P. Gambino ,  Stephen E. Luce ,  Thomas L. McDevitt ,  Lee M. Nicholson ,  Anthony K. Stamper

IPC分类号： H01L21/31 ,  H01L21/302

CPC分类号： H01L21/76831 ,  H01L21/02107 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31695 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76868

摘要： Methods and structures having pore-closing layers for closing exposed pores in a patterned porous low-k dielectric layer, and optionally a reactive liner on the low-k dielectric. A first reactant is absorbed or retained in exposed pores in the patterned dielectric layer and then a second reactant is introduced into openings such that it enters the exposed pores, while first reactant molecules are simultaneously being outgassed. The second reactant reacts in-situ with the outgassed first reactant molecules at a mouth region of the exposed pores to form the pore-closing layer across the mouth region of exposed pores, while retaining a portion of each pore's porosity to maintain characteristics and properties of the porous low-k dielectric layer. Optionally, the first reactant may be adsorbed onto the low-k dielectric such that upon introduction of the second reactant into the patterned dielectric openings, a reactive liner is also formed on the low-k dielectric.

摘要翻译： 具有闭孔层的方法和结构，用于封闭图案化的多孔低k电介质层中的暴露孔，以及可选地在低k电介质上的反应性衬垫。 第一反应物被吸收或保留在图案化介电层中的暴露孔中，然后将第二反应物引入开口中，使得其进入暴露的孔，同时第一反应物分子同时脱气。 第二反应物与暴露孔的口部区域处的脱气的第一反应物分子原位反应，以形成穿过暴露孔的口部区域的孔闭合层，同时保留每个孔隙的一部分以保持其孔的特性和性质 多孔低k电介质层。 任选地，第一反应物可以被吸附到低k电介质上，使得当将第二反应物引入图案化的电介质开口中时，还在低k电介质上形成反应性衬垫。

公开(公告)号：US06214730B1

公开(公告)日：2001-04-10

申请号：US09257372

申请日：1999-02-25

申请人： Edward C. Cooney, III ,  Hyun K. Lee ,  Thomas L. McDevitt ,  Anthony K. Stamper

发明人： Edward C. Cooney, III ,  Hyun K. Lee ,  Thomas L. McDevitt ,  Anthony K. Stamper

IPC分类号： H01L2144

CPC分类号： H01L21/28568 ,  H01L21/76801 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76838 ,  Y10S438/963

摘要： Method of improving the resistance of a metal against degradation from exposure to fluorine released from a fluorine-containing material by forming a fluorine-barrier layer between the insulator material and the metal. The invention is especially useful in improving corrosion and poisoning resistance of metallurgy, such as aluminum metallurgy, in semiconductor structures. The invention also covers integrated circuit structures made by this method.

摘要翻译： 通过在绝缘体材料和金属之间形成氟阻隔层，提高金属抵抗从暴露于含氟材料的氟降解的方法。 本发明特别可用于改善半导体结构中的冶金冶金等的耐腐蚀和耐中毒性。 本发明还涉及通过该方法制成的集成电路结构。

公开(公告)号：US5930655A

公开(公告)日：1999-07-27

申请号：US937622

申请日：1997-09-25

申请人： Edward C. Cooney, III ,  Hyun K. Lee ,  Thomas L. McDevitt ,  Anthony K. Stamper

发明人： Edward C. Cooney, III ,  Hyun K. Lee ,  Thomas L. McDevitt ,  Anthony K. Stamper

IPC分类号： H01L21/285 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L21/322

CPC分类号： H01L21/28568 ,  H01L21/76801 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76838 ,  Y10S438/963

摘要： Method of improving the resistance of a metal against degradation from exposure to fluorine released from a fluorine-containing material by forming a fluorine-barrier layer between the insulator material and the metal. The invention is especially useful in improving corrosion and poisoning resistance of metallurgy, such as aluminum metallurgy, in semiconductor structures. The invention also covers integrated circuit structures made by this method.

摘要翻译： 通过在绝缘体材料和金属之间形成氟阻隔层，提高金属抵抗从暴露于含氟材料的氟降解的方法。 本发明特别可用于改善半导体结构中的冶金冶金等的耐腐蚀和耐中毒性。 本发明还涉及通过该方法制成的集成电路结构。

公开(公告)号：US20090212434A1

公开(公告)日：2009-08-27

申请号：US12035449

申请日：2008-02-22

申请人： Felix P. Anderson ,  Steven P. Barkyoumb ,  Edward C. Cooney, III ,  Thomas L. McDevitt ,  William J. Murphy ,  David C. Strippe

发明人： Felix P. Anderson ,  Steven P. Barkyoumb ,  Edward C. Cooney, III ,  Thomas L. McDevitt ,  William J. Murphy ,  David C. Strippe

IPC分类号： H01L21/768 ,  H01L23/538

CPC分类号： H01L23/53209 ,  C23C14/02 ,  C23C14/0641 ,  H01L21/2855 ,  H01L21/76843 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： Processes for improving adhesion of films to semiconductor wafers and a semiconductor structure are provided. By implementing the processes of the invention, it is possible to significantly suppress defect creation, e.g., decrease particle generation, during wafer fabrication processes. More specifically, the processes described significantly reduce flaking of a TaN film from edges or extreme edges (bevel) of the wafer by effectively increasing the adhesion properties of the TaN film on the wafer. The method increasing a mol percent of nitride with respect to a total tantalum plus nitride to 25% or greater during a barrier layer fabrication process.

摘要翻译： 提供了用于提高膜对半导体晶片和半导体结构的附着力的方法。 通过实施本发明的方法，可以在晶片制造工艺期间显着抑制缺陷产生，例如减少颗粒产生。 更具体地，所描述的工艺通过有效地增加TaN膜在晶片上的粘合性能，显着地减少了晶片的边缘或边缘（斜面）对TaN膜的剥落。 在阻挡层制造过程中，相对于总钽加氮化物将氮化物的摩尔百分数提高到25％或更大的方法。

公开(公告)号：US07235487B2

公开(公告)日：2007-06-26

申请号：US10709562

申请日：2004-05-13

申请人： Steven P Barkyoumb ,  Jonathan D. Chapple-Sokol ,  Edward C. Cooney, III ,  Keith E. Downes ,  Thomas L. McDevitt ,  William J. Murphy

发明人： Steven P Barkyoumb ,  Jonathan D. Chapple-Sokol ,  Edward C. Cooney, III ,  Keith E. Downes ,  Thomas L. McDevitt ,  William J. Murphy

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76871 ,  H01L21/76873

摘要： A method and structure for reducing the corrosion of the copper seed layer during the fabrication process of a semiconductor structure. Before the structure (or the wafer containing the structure) exits the vacuum environment of the sputter tool, the structure is warmed up to a temperature above the water condensation temperature of the environment outside the sputter tool. As a result, water vapor would not condense on the structure when the structure exits the sputter tool, and therefore, corrosion of the seed layer by the water vapor is prevented. Alternatively, a protective layer resistant to water vapor can be formed on top of the seed layer before the structure exits the sputter tool environment. In yet another alternative embodiment, the seed layer can comprises a copper alloy (such as with aluminum) which grows a protective layer resistant to water vapor upon exposure to water vapor.

摘要翻译： 一种用于在半导体结构的制造过程中减少铜籽晶层的腐蚀的方法和结构。 在结构（或包含结构的晶片）离开溅射工具的真空环境之前，将结构加热到高于溅射工具外部环境的水冷凝温度的温度。 结果，当结构离开溅射工具时，水蒸气不会在结构上冷凝，因此防止了水蒸气对种子层的腐蚀。 或者，在结构离开溅射工具环境之前，可以在籽晶层的顶部形成耐水蒸汽的保护层。 在另一替代实施例中，种子层可以包括铜合金（例如用铝），其在暴露于水蒸汽时生长出耐水蒸气的保护层。

公开(公告)号：US08604898B2

公开(公告)日：2013-12-10

申请号：US12426561

申请日：2009-04-20

申请人： Felix P. Anderson ,  Edward C. Cooney, III ,  Thomas L. McDevitt ,  Anthony K. Stamper

发明人： Felix P. Anderson ,  Edward C. Cooney, III ,  Thomas L. McDevitt ,  Anthony K. Stamper

IPC分类号： H01H51/22

CPC分类号： H01H59/0009 ,  H01L2924/0002 ,  H01L2924/00

摘要： Vertical integrated MEMS switches, design structures and methods of fabricating such vertical switches is provided herein. The method of manufacturing a MEMS switch, includes forming at least two vertically extending vias in a wafer and filling the at least two vertically extending vias with a metal to form at least two vertically extending wires. The method further includes opening a void in the wafer from a bottom side such that at least one of the vertically extending wires is moveable within the void.

摘要翻译： 本文提供垂直集成MEMS开关，制造这种垂直开关的设计结构和方法。 制造MEMS开关的方法包括在晶片中形成至少两个垂直延伸的通孔，并用金属填充至少两个垂直延伸的通孔以形成至少两个垂直延伸的导线。 该方法还包括从底侧打开晶片中的空隙，使得垂直延伸的线中的至少一个可在空隙内移动。