公开(公告)号：US07585769B2

公开(公告)日：2009-09-08

申请号：US11429022

申请日：2006-05-05

申请人： David Bour ,  Jacob W. Smith ,  Sandeep Nijhawan ,  Lori D. Washington ,  David Eaglesham

发明人： David Bour ,  Jacob W. Smith ,  Sandeep Nijhawan ,  Lori D. Washington ,  David Eaglesham

IPC分类号： H01L21/44

CPC分类号： C30B25/02 ,  C23C16/303 ,  C23C16/4401 ,  C30B25/165 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

摘要： A method of suppressing parasitic particle formation in a metal organic chemical vapor deposition process is described. The method may include providing a substrate to a reaction chamber, and introducing an organometallic precursor, a particle suppression compound and at least a second precursor to the reaction chamber. The second precursor reacts with the organometallic precursor to form a nucleation layer on the substrate. Also, a method of suppressing parasitic particle formation during formation of a III-V nitride layer is described. The method includes introducing a group III metal containing precursor to a reaction chamber. The group III metal precursor may include a halogen. A hydrogen halide gas and a nitrogen containing gas are also introduced to the reaction chamber. The nitrogen containing gas reacts with the group III metal precursor to form the III-V nitride layer on the substrate.

摘要翻译： 描述了抑制金属有机化学气相沉积工艺中的寄生颗粒形成的方法。 该方法可以包括向反应室提供底物，并将有机金属前体，颗粒抑制化合物和至少第二前体引入反应室。 第二前驱体与有机金属前驱体反应以在基底上形成成核层。 另外，描述了在形成III-V族氮化物层期间抑制寄生粒子形成的方法。 该方法包括将含III族金属的前体引入反应室。 III族金属前体可以包括卤素。 卤化氢气体和含氮气体也被引入反应室。 含氮气体与III族金属前体反应以在衬底上形成III-V族氮化物层。

公开(公告)号：US20080124817A1

公开(公告)日：2008-05-29

申请号：US11508523

申请日：2006-08-23

申请人： David Bour ,  Sandeep Nijhawan ,  Lori D. Washington ,  Jacob W. Smith

发明人： David Bour ,  Sandeep Nijhawan ,  Lori D. Washington ,  Jacob W. Smith

IPC分类号： H01L21/66 ,  C23C16/00

CPC分类号： H01L22/20 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L22/12 ,  H01L33/007

摘要： Methods and systems are provided of fabricating a compound nitride semiconductor structure. A substrate is disposed within a processing chamber into which a group-III precursor and a nitrogen precursor are flowed. A layer is deposited over the substrate with a thermal chemical-vapor-deposition process using the precursors. The substrate is transferred to a transfer chamber where a temperature and a curvature of the layer are measured. The substrate is then transferred to a second processing chamber where a second layer is deposited.

摘要翻译： 提供了制造复合氮化物半导体结构的方法和系统。 衬底设置在III族前体和氮前体流动的处理室内。 通过使用前体的热化学气相沉积工艺将一层沉积在衬底上。 将衬底转移到测量层的温度和曲率的转移室。 然后将衬底转移到沉积第二层的第二处理室。

公开(公告)号：US07374960B1

公开(公告)日：2008-05-20

申请号：US11508523

申请日：2006-08-23

申请人： David Bour ,  Sandeep Nijhawan ,  Lori D. Washington ,  Jacob W. Smith

发明人： David Bour ,  Sandeep Nijhawan ,  Lori D. Washington ,  Jacob W. Smith

IPC分类号： H01L21/00

CPC分类号： H01L22/20 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L22/12 ,  H01L33/007

摘要： Methods and systems are provided of fabricating a compound nitride semiconductor structure. A substrate is disposed within a processing chamber into which a group-III precursor and a nitrogen precursor are flowed. A layer is deposited over the substrate with a thermal chemical-vapor-deposition process using the precursors. The substrate is transferred to a transfer chamber where a temperature and a curvature of the layer are measured. The substrate is then transferred to a second processing chamber where a second layer is deposited.

摘要翻译： 提供了制造复合氮化物半导体结构的方法和系统。 衬底设置在III族前体和氮前体流动的处理室内。 通过使用前体的热化学气相沉积工艺将一层沉积在衬底上。 将衬底转移到测量层的温度和曲率的转移室。 然后将衬底转移到沉积第二层的第二处理室。

公开(公告)号：US20080050510A1

公开(公告)日：2008-02-28

申请号：US11508375

申请日：2006-08-23

申请人： Ronald Stevens ,  Brendan McDougall ,  Jacob W. Smith ,  Garry Kwong ,  Sandeep Nijhawan ,  Lori D. Washington

发明人： Ronald Stevens ,  Brendan McDougall ,  Jacob W. Smith ,  Garry Kwong ,  Sandeep Nijhawan ,  Lori D. Washington

IPC分类号： C23C16/52 ,  C23C16/00

CPC分类号： C23C16/4482

摘要： Methods are disclosed of determining a fill level of a precursor in a bubbler. The bubbler is fluidicly coupled with a substrate processing chamber through a vapor-delivery system. The bubbler and vapor-delivery system are backfilled with a known dose of a backfill gas. A pressure and temperature of the backfill gas are determined, permitting a total volume for the backfill gas in the bubbler and vapor-delivery system to be determined by application of a gas law. The fill level of the precursor in the bubbler is determined as a difference between (1) a total volume of the bubbler and vapor-delivery system and (2) the determined total volume for the backfill gas.

摘要翻译： 公开了确定起泡器中前体的填充水平的方法。 起泡器通过蒸气输送系统与基底处理室流体耦合。 起泡器和蒸气输送系统用已知剂量的回填气体回填。 确定回填气体的压力和温度，允许通过应用气体定律确定起泡器和蒸气输送系统中回填气体的总体积。 起泡器中前体的填充水平被确定为（1）起泡器和蒸气输送系统的总体积和（2）确定的回填气体的总体积之间的差。

公开(公告)号：US07781016B2

公开(公告)日：2010-08-24

申请号：US11508375

申请日：2006-08-23

申请人： Ronald Stevens ,  Brendan McDougall ,  Jacob W. Smith ,  Garry Kwong ,  Sandeep Nijhawan ,  Lori D. Washington

发明人： Ronald Stevens ,  Brendan McDougall ,  Jacob W. Smith ,  Garry Kwong ,  Sandeep Nijhawan ,  Lori D. Washington

IPC分类号： C23C16/00

CPC分类号： C23C16/4482

摘要： Methods are disclosed of determining a fill level of a precursor in a bubbler. The bubbler is fluidicly coupled with a substrate processing chamber through a vapor-delivery system. The bubbler and vapor-delivery system are backfilled with a known dose of a backfill gas. A pressure and temperature of the backfill gas are determined, permitting a total volume for the backfill gas in the bubbler and vapor-delivery system to be determined by application of a gas law. The fill level of the precursor in the bubbler is determined as a difference between (1) a total volume of the bubbler and vapor-delivery system and (2) the determined total volume for the backfill gas.

摘要翻译： 公开了确定起泡器中前体的填充水平的方法。 起泡器通过蒸气输送系统与基底处理室流体耦合。 起泡器和蒸气输送系统用已知剂量的回填气体回填。 确定回填气体的压力和温度，允许通过应用气体定律确定起泡器和蒸气输送系统中回填气体的总体积。 起泡器中前体的填充水平被确定为（1）起泡器和蒸气输送系统的总体积和（2）确定的回填气体的总体积之间的差。

公开(公告)号：US20110308453A1

公开(公告)日：2011-12-22

申请号：US12812222

申请日：2009-01-23

申请人： Jie Su ,  Lori D. Washington ,  David Bour ,  Jacob Grayson ,  Sandeep Nijhawan ,  Ronald Stevens

发明人： Jie Su ,  Lori D. Washington ,  David Bour ,  Jacob Grayson ,  Sandeep Nijhawan ,  Ronald Stevens

IPC分类号： B05C11/00

CPC分类号： H01L21/67115 ,  C23C16/303 ,  C23C16/46 ,  C23C16/481 ,  C23C16/52 ,  C23C16/54 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/67207

摘要： A method and apparatus are provided for monitoring and controlling substrate processing parameters for a cluster tool that utilizes chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates within a processing chamber. A closed-loop control system performs in-situ monitoring of the Group III-nitride film growth rate and adjusts film growth parameters as required to maintain a target growth rate. In another embodiment, a closed-loop control system performs in-situ monitoring of film growth parameters for multiple processing chambers for one or more film deposition systems.

摘要翻译： 提供了一种用于监测和控制利用化学气相沉积和/或氢化物气相外延（HVPE）沉积的簇工具的衬底处理参数的方法和装置。 在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺将III族氮化物膜沉积在处理室内的多个衬底上。 闭环控制系统对III族氮化物膜生长速率进行原位监测，并根据需要调整膜生长参数以维持目标生长速率。 在另一个实施例中，闭环控制系统执行用于一个或多个成膜系统的多个处理室的膜生长参数的原位监测。

公开(公告)号：US20080050889A1

公开(公告)日：2008-02-28

申请号：US11510107

申请日：2006-08-24

申请人： David Bour ,  Jacob Smith ,  Sandeep Nijhawan ,  Lori D. Washington

发明人： David Bour ,  Jacob Smith ,  Sandeep Nijhawan ,  Lori D. Washington

IPC分类号： H01L21/20

CPC分类号： C30B25/02 ,  C23C16/303 ,  C30B25/10 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/67109 ,  H01L21/67115

摘要： Systems and methods to suppress the formation of parasitic particles during the deposition of a III-V nitride film with, e.g., metal-organic chemical vapor deposition (MOCVD) are described. In accordance with certain aspects of the invention, a hotwall reactor design and methods associated therewith, with wall temperatures similar to process temperatures, so as to create a substantially isothermal reaction chamber, may generally suppress parasitic particle formation and improve deposition performance.

摘要翻译： 描述了在诸如金属 - 有机化学气相沉积（MOCVD）的III-V族氮化物膜的沉积期间抑制寄生颗粒形成的系统和方法。 根据本发明的某些方面，与其相关的热壁反应器设计和与其相似的壁温度，以便产生基本上等温的反应室，通常可以抑制寄生颗粒形成并提高沉积性能。

公开(公告)号：US07976631B2

公开(公告)日：2011-07-12

申请号：US11873132

申请日：2007-10-16

申请人： Brian H. Burrows ,  Alexander Tam ,  Ronald Stevens ,  Kenric T. Choi ,  James D. Felsch ,  Jacob Grayson ,  Sumedh Acharya ,  Sandeep Nijhawan ,  Lori D. Washington ,  Nyi O. Myo

发明人： Brian H. Burrows ,  Alexander Tam ,  Ronald Stevens ,  Kenric T. Choi ,  James D. Felsch ,  Jacob Grayson ,  Sumedh Acharya ,  Sandeep Nijhawan ,  Lori D. Washington ,  Nyi O. Myo

IPC分类号： C23C16/00 ,  C23C16/455 ,  H01L21/306 ,  H01L21/3065

CPC分类号： C23C16/45565 ,  C23C16/45514 ,  C23C16/45519 ,  C23C16/45574 ,  C23C16/45578 ,  C30B25/14 ,  C30B29/403 ,  Y10T137/0318 ,  Y10T137/87153

摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.

摘要翻译： 提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。 在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺在多个基板上沉积III族氮化物膜。 将III族前体，例如三甲基镓，三甲基铝或三甲基铟，以及含氮前体，例如氨，被输送到多个分离前体气体的直通道。 将前体气体注入到混合通道中，在混合通道中气体被混合，然后进入含有底物的处理体积。 提供热交换通道用于混合通道的温度控制，以防止不希望的前体的冷凝和反应。

公开(公告)号：US20110121503A1

公开(公告)日：2011-05-26

申请号：US12850738

申请日：2010-08-05

申请人： BRIAN H. BURROWS ,  Ronald Stevens ,  Jacob Grayson ,  Joshua J. Podesta ,  Sandeep Nijhawan ,  Lori D. Washington ,  Alexander Tam ,  Sumedh Acharya

发明人： BRIAN H. BURROWS ,  Ronald Stevens ,  Jacob Grayson ,  Joshua J. Podesta ,  Sandeep Nijhawan ,  Lori D. Washington ,  Alexander Tam ,  Sumedh Acharya

IPC分类号： B23Q3/00

CPC分类号： H01L21/67115 ,  C23C16/4412 ,  C23C16/4584 ,  C23C16/481 ,  H01L21/68742 ,  H01L21/68792

摘要： Embodiments of the present invention generally relate to methods and apparatus for chemical vapor deposition (CVD) on a substrate, and, in particular, to a process chamber and components for use in metal organic chemical vapor deposition. The apparatus comprises a chamber body defining a process volume. A showerhead in a first plane defines a top portion of the process volume. A carrier plate extends across the process volume in a second plane forming an upper process volume between the showerhead and the susceptor plate. A transparent material in a third plane defines a bottom portion of the process volume forming a lower process volume between the carrier plate and the transparent material. A plurality of lamps forms one or more zones located below the transparent material. The apparatus provides uniform precursor flow and mixing while maintaining a uniform temperature over larger substrates thus yielding a corresponding increase in throughput.

摘要翻译： 本发明的实施方案一般涉及用于基板上的化学气相沉积（CVD）的方法和装置，特别涉及用于金属有机化学气相沉积中的处理室和组件。 该装置包括限定处理量的室主体。 第一平面中的喷头定义了处理量的顶部。 载体板在第二平面中延伸过程体积，形成在喷头和基座板之间的上过程体积。 在第三平面中的透明材料限定了处理体积的底部，其在承载板和透明材料之间形成较低的处理体积。 多个灯形成位于透明材料下方的一个或多个区域。 该装置提供均匀的前体流动和混合，同时在较大的底物上保持均匀的温度，从而产生相应的生产量的增加。

公开(公告)号：US20110117728A1

公开(公告)日：2011-05-19

申请号：US12868899

申请日：2010-08-26

申请人： Jie Su ,  Lori D. Washington ,  Sandeep Nijhawan ,  Olga Kryliouk ,  Jacob Grayson ,  Sang Won Kang ,  Dong Hyung Lee ,  Hua Chung

发明人： Jie Su ,  Lori D. Washington ,  Sandeep Nijhawan ,  Olga Kryliouk ,  Jacob Grayson ,  Sang Won Kang ,  Dong Hyung Lee ,  Hua Chung

IPC分类号： H01L21/20 ,  B08B9/00

CPC分类号： C23C16/4405 ,  C23C16/4404 ,  C23C16/45574 ,  H01L21/67115

摘要： A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.

摘要翻译： 一种用于从处理室的内表面去除沉积产物并用于防止或减缓这种沉积产物的生长的方法和装置。 将含卤素气体提供到室以蚀刻掉沉积产物。 将卤素清除气体提供到室以除去任何残留的卤素。 卤素清除气体通常通过暴露于电磁能（通过热能在处理室内）或通过电场，UV或微波在远程室中而被激活。 可以将沉积前体添加到卤素清除气体中，以在室的内表面上形成耐沉积膜。 另外，或者也可以通过在PVD工艺中将耐沉积金属溅射到处理室的内部部件上来形成耐沉积膜。