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    Photo-assisted CVD
    1.
    发明授权
    Photo-assisted CVD 失效
    照相辅助CVD

    公开(公告)号：US4435445A

    公开(公告)日：1984-03-06

    申请号：US377738

    申请日：1982-05-13

    申请人： David D. Allred ,  Lee Walter ,  Jaime M. Reyes ,  Stanford R. Ovshinsky

    发明人： David D. Allred ,  Lee Walter ,  Jaime M. Reyes ,  Stanford R. Ovshinsky

    IPC分类号： C23C16/04 ,  C23C16/48 ,  G03G5/08 ,  C23C13/00

    CPC分类号： C23C16/488 ,  C23C16/047 ,  C23C16/482

    摘要： A process and apparatus for depositing a film from a gas involves introducing the gas to a deposition environment containing a substrate, heating the substrate, and irradiating the gas with radiation having a preselected energy spectrum, such that a film is deposited onto the substrate. In a preferred embodiment, the energy spectrum of the radiation is below or approximately equal to that required to photochemically decompose the gas. In another embodiment, the gas is irradiated through a transparent member exposed at a first surface thereof to the deposition environment, and a flow of substantially inert gaseous material is passed along the first surface to minimize deposition thereon.

    摘要翻译： 用于从气体沉积膜的方法和装置包括将气体引入到包含基底的沉积环境中，加热基底，并用具有预选能谱的辐射照射气体，使得膜沉积到基底上。 在优选实施例中，辐射的能谱低于或近似等于光化学分解气体所需的能谱。 在另一个实施方案中，通过在其第一表面暴露于沉积环境的透明构件照射气体，并且沿着第一表面通过基本惰性的气态物质的流动，以使其上的沉积最小化。

    Method of making amorphous semiconductor alloys and devices using microwave energy
    5.
    发明授权
    Method of making amorphous semiconductor alloys and devices using microwave energy 失效
    制造使用微波能量的非晶半导体合金和器件的方法

    公开(公告)号：US4517223A

    公开(公告)日：1985-05-14

    申请号：US423424

    申请日：1982-09-24

    申请人： Stanford R. Ovshinsky ,  David D. Allred ,  Lee Walter ,  Stephen J. Hudgens

    发明人： Stanford R. Ovshinsky ,  David D. Allred ,  Lee Walter ,  Stephen J. Hudgens

    IPC分类号： C23C16/30 ,  C23C16/50 ,  C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  H01L31/04 ,  C23C11/02

    CPC分类号： H01J37/3222 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32275 ,  H01L21/02381 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

    摘要： A process for making amorphous semiconductor alloy films and devices at high deposition rates utilizes microwave energy to form a deposition plasma. The alloys exhibit high quality electronic properties suitable for many applications including photovoltaic applications.The process includes the steps of providing a source of microwave energy, coupling the microwave energy into a substantially enclosed reaction vessel containing the substrate onto which the amorphous semiconductor film is to be deposited, and introducing into the vessel reaction gases including at least one semiconductor containing compound. The microwave energy and the reaction gases form a glow discharge plasma within the vessel to deposit an amorphous semiconductor film from the reaction gases onto the substrate. The reactions gases can include silane (SiH.sub.4), silicon tetrafluoride (SiF.sub.4), silane and silicon tetrafluoride, silane and germane (GeH.sub.4), and silicon tetrafluoride and germane. The reaction gases can also include germane or germanium tetrafluoride (GeF.sub.4). To all of the foregoing, hydrogen (H.sub.2) can also be added. Dopants, either p-type or n-type can also be added to the reaction gases to form p-type or n-type alloy films, respectively. Also, band gap increasing elements such as carbon or nitrogen can be added in the form of, for example, methane or ammonia gas to widen the band gap of the alloys.

    摘要翻译： 制造非晶半导体合金膜和高沉积速率的器件的方法利用微波能量来形成沉积等离子体。 该合金表现出高质量的电子性能，适用于许多应用，包括光伏应用。 该方法包括以下步骤：提供微波能量源，将微波能量耦合到基本上封闭的反应容器中，所述反应容器含有要沉积非晶半导体膜的衬底，并将包含至少一个含有 复合。 微波能量和反应气体在容器内形成辉光放电等离子体，以将非晶半导体膜从反应气体沉积到衬底上。 反应气体可以包括硅烷（SiH 4），四氟化硅（SiF 4），硅烷和四氟化硅，硅烷和锗烷（GeH 4）以及四氟化硅和锗烷。 反应气体还可以包括锗烷或四氟化锗（GeF 4）。 对于所有这些，也可以加入氢（H 2）。 也可以将p型或n型掺杂剂添加到反应气体中以分别形成p型或n型合金膜。 此外，带隙增加元素如碳或氮可以以例如甲烷或氨气的形式加入，以加宽合金的带隙。

    Method of making amorphous semiconductor alloys and devices using microwave energy
    7.
    发明授权
    Method of making amorphous semiconductor alloys and devices using microwave energy 失效
    制造使用微波能量的非晶半导体合金和器件的方法

    公开(公告)号：US4504518A

    公开(公告)日：1985-03-12

    申请号：US605575

    申请日：1984-04-30

    申请人： Stanford R. Ovshinsky ,  David D. Allred ,  Lee Walter ,  Stephen J. Hudgens

    发明人： Stanford R. Ovshinsky ,  David D. Allred ,  Lee Walter ,  Stephen J. Hudgens

    IPC分类号： C23C16/50 ,  C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  H01L29/161 ,  H01L31/04 ,  H01L31/20 ,  B05D3/06

    CPC分类号： H01J37/32 ,  C23C16/511 ,  H01J37/3222 ,  H01J37/32275 ,  H01L21/0242 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/161 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

    摘要： A low pressure process for making amorphous semiconductor alloy films and devices at high deposition rates and high gas conversion efficiencies utilizes microwave energy to form a deposition plasma. The alloys exhibit high-quality electronic properties suitable for many applications including photovoltaic and electrophotographic applications.The process includes the steps of providing a source of microwave energy, coupling the microwave energy into a substantially enclosed reaction vessel containing the substrate onto which the amorphous semiconductor film is to be deposited, introducing into the vessel at least one reaction gas and evacuating the vessel to a low enough deposition pressure to deposit the film at high deposition rates with high reaction gas conversion efficiencies without any significant powder or polymeric inclusions. The microwave energy and the reaction gases form a glow discharge plasma within the vessel to deposit an amorphous semiconductor film from the reaction gases onto the substrate. The reaction gases can include silane (SiH.sub.4), silicon tetrafluoride (SiF.sub.4), silane and silicon tetrafluoride, silane and germane (GeH.sub.4), and silicon tetrafluoride and germane. The reaction gases can also include germane or germanium tetrafluoride (GeF.sub.4). To all of the foregoing, hydrogen (H.sub.2) can also be added. Dopants, either p-type or n-type can also be added to the reaction gases to form p-type or n-type alloy films, respectively. Also, band gap increasing elements such as carbon or nitrogen can be added in the form of, for example, methane or ammonia gas to widen the band gap of the alloys.

    摘要翻译： 用于制造非晶半导体合金膜和具有高沉积速率和高气体转换效率的器件的低压工艺利用微波能量来形成沉积等离子体。 该合金表现出高质量的电子性能，适用于许多应用，包括光伏和电子照相应用。 该方法包括以下步骤：提供微波能量源，将微波能量耦合到基本上封闭的反应容器中，所述反应容器含有要沉积非晶半导体膜的基底，将至少一个反应气体引入容器中并抽真空 达到足够低的沉积压力，以高反应气体转化效率以高沉积速率沉积膜，而没有任何显着的粉末或聚合物夹杂物。 微波能量和反应气体在容器内形成辉光放电等离子体，以将非晶半导体膜从反应气体沉积到衬底上。 反应气体可以包括硅烷（SiH4），四氟化硅（SiF4），硅烷和四氟化硅，硅烷和锗烷（GeH4）以及四氟化硅和锗烷。 反应气体还可以包括锗烷或四氟化锗（GeF 4）。 对于所有这些，也可以加入氢（H 2）。 也可以将p型或n型掺杂剂添加到反应气体中以分别形成p型或n型合金膜。 此外，带隙增加元素如碳或氮可以以例如甲烷或氨气的形式加入，以加宽合金的带隙。

    MICROACTUATOR WITH SELF-ASSEMBLED MONOLAYER ENCAPSULANT
    8.
    发明申请
    MICROACTUATOR WITH SELF-ASSEMBLED MONOLAYER ENCAPSULANT 有权
    具有自组装单层包装的微处理器

    公开(公告)号：US20100177446A1

    公开(公告)日：2010-07-15

    申请号：US12730444

    申请日：2010-03-24

    申请人： Mehmet Hancer ,  Marsha A. Huha ,  John S. Wright ,  Lee Walter

    发明人： Mehmet Hancer ,  Marsha A. Huha ,  John S. Wright ,  Lee Walter

    IPC分类号： G11B21/24

    CPC分类号： G11B5/5552

    摘要： A microactuator comprises a mounting block, a head suspension, a compliant joint for connecting the mounting block to the head suspension, and a piezoelectric element for deforming the compliant joint in order to rotate the head suspension with respect to the mounting block. An encapsulant covers an exposed surface of the microactuator. The encapsulant comprises a self-assembled monolayer formed of an organosilicone or organosilane, where the self-assembled monolayer has a self-limiting thickness of one layer of a molecule.

    摘要翻译： 微型致动器包括安装块，头部悬挂，用于将安装块连接到头部悬挂件的柔性接头，以及用于使柔性接头变形以使头部悬架相对于安装块旋转的压电元件。 密封剂覆盖微致动器的暴露表面。 密封剂包括由有机硅或有机硅烷形成的自组装单层，其中自组装单层具有一层分子的自限制厚度。

    Laterally supported handle wafer for through-wafer reactive-ion etch micromachining
    9.
    发明授权
    Laterally supported handle wafer for through-wafer reactive-ion etch micromachining 失效
    用于通过晶片反应离子蚀刻微加工的侧面支撑的处理晶片

    公开(公告)号：US06733681B1

    公开(公告)日：2004-05-11

    申请号：US09707698

    申请日：2000-11-07

    申请人： Roger L. Hipwell, Jr. ,  Lee Walter ,  Wayne A. Bonin ,  Barry D. Wissman ,  Zine-Eddine Boutaghou ,  Barbara J. Ihlow-Mahrer

    发明人： Roger L. Hipwell, Jr. ,  Lee Walter ,  Wayne A. Bonin ,  Barry D. Wissman ,  Zine-Eddine Boutaghou ,  Barbara J. Ihlow-Mahrer

    IPC分类号： B81C100

    CPC分类号： B81C1/00357 ,  B81C2201/019 ,  Y10T29/49025

    摘要： A method of handling a wafer for through-wafer plasma etching includes lateral support provided between a handle wafer and a product wafer without wafer bonding or an adhesive film using mating mechanical structures. The product wafer is easily separated from the handle wafer following etching without stripping or cleaning. Because the connection between the wafers is mechanical, not from an adhesive layer/bonded layer, a wafer can be etched, inspected, and subsequently continue to be etched without the hindrance of repeated bonding, separation, and cleaning. A non-bonded support for released devices following a through-etch process is also provided.

    摘要翻译： 用于晶圆等离子体蚀刻处理晶片的方法包括在晶片接合之间提供的手柄晶片和产品晶片之间的侧向支撑，或者使用配合机械结构的粘合膜。 在没有剥离或清洁的情况下，产品晶片在蚀刻之后容易地与处理晶片分离。 因为晶片之间的连接是机械的，而不是粘合层/接合层，所以可以蚀刻，检查晶片并且随后继续蚀刻晶片，而不会重复地进行接合，分离和清洁。 还提供了在通过蚀刻工艺之后的释放器件的非接合支撑。

    Method of fabricating electrically isolated metal MEMS beams and microactuator incorporating the MEMS beam
    10.
    发明授权
    Method of fabricating electrically isolated metal MEMS beams and microactuator incorporating the MEMS beam 有权
    制造电隔离金属MEMS光束的方法和结合MEMS光束的微型致动器

    公开(公告)号：US06674614B2

    公开(公告)日：2004-01-06

    申请号：US10037679

    申请日：2002-01-02

    申请人： Wayne A. Bonin ,  Lee Walter ,  Zine-Eddine Boutaghou

    发明人： Wayne A. Bonin ,  Lee Walter ,  Zine-Eddine Boutaghou

    IPC分类号： G11B2124

    CPC分类号： G11B5/5552

    摘要： A microactuator is formed by defining stator and rotor regions on a wafer. Isolation barriers are formed in the stator and rotor regions to define a isolation regions. Conductive suspension beam are formed between the first and second isolation regions, and wafer material between the stator and rotor regions is removed to form a stator and a rotor. The microactuator is arranged to position a load device having an electrical component. The suspension beams support the rotor and load device and provide electrical connection between the stator and rotor for the microactuator and/or the load device.

    摘要翻译： 通过在晶片上限定定子和转子区域来形成微致动器。 在定子和转子区域中形成隔离屏障，以限定隔离区域。 在第一和第二隔离区域之间形成导电悬架梁，并且去除定子和转子区域之间的晶片材料以形成定子和转子。 微型致动器布置成定位具有电气部件的负载装置。 悬架梁支撑转子和负载装置，并为微型致动器和/或负载装置提供定子和转子之间的电连接。