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26 条记录 (耗时 0.028 秒)

    Method for copper CMP using polymeric complexing agents
    1.
    发明授权
    Method for copper CMP using polymeric complexing agents 有权
    使用聚合物络合剂的铜CMP的方法

    公开(公告)号：US06821897B2

    公开(公告)日：2004-11-23

    申请号：US10246280

    申请日：2002-09-18

    申请人： David J. Schroeder ,  Phillip Carter ,  Jeffrey P. Chamberlain ,  Kyle Miller ,  Isaac K. Cherian

    发明人： David J. Schroeder ,  Phillip Carter ,  Jeffrey P. Chamberlain ,  Kyle Miller ,  Isaac K. Cherian

    IPC分类号： H01L2144

    CPC分类号： C23F3/06 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/3212

    摘要： The invention provides a method of polishing a substrate comprising a metal layer comprising copper. The method comprises the steps of (i) providing a chemical-mechanical polishing system comprising a liquid carrier, a polishing pad, an abrasive, and a negatively-charged polymer or copolymer, (ii) contacting the substrate with the poloshing system, and (iii) abrading at least a portion of the substrate to polish the metal layer of the substrate. The negatively-charged polymer or copolymer comprises one or more monomers selected from sulfonic acids, sulfonates, sulfates, phosphonic acids, phosphonates, and phosphates, has a molecular weight of about 20,000 g/mol or more, and coats at least a portion of the abrasive such that the abrasive has a zeta potential value that is lowered upon interaction of the negatively-charged polymer or copolymer with the abrasive.

    摘要翻译： 本发明提供了一种抛光包含铜的金属层的衬底的方法。 该方法包括以下步骤：（i）提供包括液体载体，抛光垫，研磨剂和带负电荷的聚合物或共聚物的化学机械抛光系统，（ii）使基底与爆破系统接触，和（ iii）研磨衬底的至少一部分以抛光衬底的金属层。 带负电荷的聚合物或共聚物包含一种或多种选自磺酸，磺酸盐，硫酸盐，膦酸，膦酸盐和磷酸盐的单体，其分子量为约20,000g / mol或更高，并且涂覆至少一部分 研磨剂使得研磨剂具有在带负电荷的聚合物或共聚物与研磨剂相互作用时降低的ζ电位值。

    Polishing of sapphire with composite slurries
    3.
    发明授权
    Polishing of sapphire with composite slurries 有权
    用复合浆料抛光蓝宝石

    公开(公告)号：US08721917B2

    公开(公告)日：2014-05-13

    申请号：US12286960

    申请日：2008-10-03

    申请人： Isaac K. Cherian ,  Abhaya K. Bakshi

    发明人： Isaac K. Cherian ,  Abhaya K. Bakshi

    IPC分类号： C09K13/00

    CPC分类号： C09K3/1463 ,  C09G1/02

    摘要： Improved slurry compositions comprising a mixture of a first type of particles and a second type of abrasive particles dispersed within an aqueous medium, and abrasive slurry compositions for use chemical mechanical planarization (CMP) processes, particularly abrasive slurry compositions for polishing of sapphire. These abrasive slurry compositions comprise a mixture of a first type of abrasive particles having a hardness that is harder than the surface being polished and a second type of abrasive particles have a hardness that is softer than the surface being polished, particularly mixtures of silicon carbide abrasive particles and silica abrasive particles, dispersed within an aqueous medium.

    摘要翻译： 改进的浆料组合物，其包含第一类型的颗粒和分散在水性介质中的第二类型磨料颗粒的混合物，以及用于使用化学机械平面化（CMP）工艺的磨料浆料组合物，特别是用于抛光蓝宝石的磨料浆料组合物。 这些磨料浆料组合物包含第一类磨料颗粒的混合物，该磨料颗粒的硬度比待抛光的表面硬，并且第二类磨料颗粒具有比被抛光表面更硬的硬度，特别是碳化硅磨料的混合物 颗粒和二氧化硅磨料颗粒分散在水性介质中。

    Polishing system with stopping compound and method of its use
    8.
    发明授权
    Polishing system with stopping compound and method of its use 有权
    具有停车复合抛光系统及其使用方法

    公开(公告)号：US06855266B1

    公开(公告)日：2005-02-15

    申请号：US09636246

    申请日：2000-08-10

    申请人： Shumin Wang ,  Vlasta Brusic Kaufman ,  Steven K. Grumbine ,  Isaac K. Cherian

    发明人： Shumin Wang ,  Vlasta Brusic Kaufman ,  Steven K. Grumbine ,  Isaac K. Cherian

    IPC分类号： C09G1/02 ,  H01L21/321 ,  C09K13/00

    CPC分类号： H01L21/3212 ,  C09G1/02

    摘要： The invention provides a system for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, (iv) at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, and (v) a polishing pad and/or an abrasive. The invention also provides a composition comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive (iv) at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, to be used with (v) a polishing pad and/or an abrasive.

    摘要翻译： 本发明提供一种用于抛光多层基底的一层或多层的系统，其包括第一金属层和第二层，所述第二层包括（i）液体载体，（ii）至少一种氧化剂，（iii）至少一种 抛光添加剂，其增加系统抛光至少一层基材的速率，（iv）至少一种具有第一金属层的抛光选择性的停止化合物：至少约30:1的第二层，和（v ）抛光垫和/或磨料。 本发明还提供一种组合物，其包含（i）液体载体，（ii）至少一种氧化剂，（iii）至少一种抛光添加剂（iv）至少一种具有第一金属层的抛光选择性的停止化合物：第二 至少约30:1的层，与（v）抛光垫和/或研磨剂一起使用。

    CMP method for noble metals
    10.
    发明授权
    CMP method for noble metals 有权
    贵金属的CMP方法

    公开(公告)号：US06527622B1

    公开(公告)日：2003-03-04

    申请号：US10054059

    申请日：2002-01-22

    申请人： Vlasta Brusic ,  Francesco M. De Rege ,  Kevin J. Moeggenborg ,  Isaac K. Cherian ,  Renjie Zhou

    发明人： Vlasta Brusic ,  Francesco M. De Rege ,  Kevin J. Moeggenborg ,  Isaac K. Cherian ,  Renjie Zhou

    IPC分类号： B24B100

    CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  C23F3/04 ,  C23F3/06 ,  H01L28/65

    摘要： The invention provides a method of polishing a substrate comprising a noble metal comprising (i) contacting the substrate with a CMP system and (ii) abrading at least a portion of the substrate to polish the substrate. The CMP systems each comprise an abrasive and/or polishing pad, a liquid carrier, and optionally one or more polishing additives. In a first embodiment, the polishing additives are selected from the group consisting of diketones, diketonates, heterocyclic nitrogen-containing compounds, heterocyclic oxygen-containing compounds, heterocyclic phosphorus-containing compounds, urea compounds, nitrogen-containing compounds that can be zwitterionic compounds, salts thereof, and combinations thereof. In a second embodiment, the polishing additive is a metal compound with two or more oxidation states and is used in conjunction with a peroxy-type oxidizer. In a third embodiment, the CMP system comprises &agr;-alumina and fumed alumina, wherein the weight ratio of &agr;-alumina to fumed alumina is about 0.6:1 to about 9:1.

    摘要翻译： 本发明提供一种抛光包括贵金属的基材的方法，包括（i）使基板与CMP系统接触，以及（ii）研磨基材的至少一部分以抛光基材。 CMP系统各自包括磨料和/或抛光垫，液体载体和任选的一种或多种抛光添加剂。 在第一实施方案中，抛光添加剂选自二酮，二酮，杂环含氮化合物，含杂环氧的化合物，含杂环的化合物，尿素化合物，可以是两性离子化合物的含氮化合物， 其盐，及其组合。 在第二实施方案中，抛光添加剂是具有两种或更多种氧化态的金属化合物，并与过氧型氧化剂结合使用。 在第三个实施方案中，CMP系统包括α-氧化铝和热解氧化铝，其中α-氧化铝与热解氧化铝的重量比为约0.6:1至约9:1。