公开(公告)号：US07259111B2

公开(公告)日：2007-08-21

申请号：US11142124

申请日：2005-06-01

申请人： Deenesh Padhi ,  Ganesh Balasubramanian ,  Annamalai Lakshmanan ,  Zhenjiang Cui ,  Juan Carlos Rocha-Alvarez ,  Bok Hoen Kim ,  Hichem M'Saad ,  Steven Reiter ,  Francimar Schmitt

发明人： Deenesh Padhi ,  Ganesh Balasubramanian ,  Annamalai Lakshmanan ,  Zhenjiang Cui ,  Juan Carlos Rocha-Alvarez ,  Bok Hoen Kim ,  Hichem M'Saad ,  Steven Reiter ,  Francimar Schmitt

IPC分类号： H01L21/469

CPC分类号： H01L21/31633 ,  C23C16/029 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/5096 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274

摘要： A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.

摘要翻译： 一种在没有等离子体放电的情况下将布置在单个处理室内的下面的衬底上沉积显示出高粘合强度的有机硅酸盐介电层的方法。 该方法包括将衬底定位在具有动力电极的处理室内，将界面气体混合物流入处理室，界面气体混合物包含一种或多种有机硅化合物和一种或多种氧化性气体，在衬底上沉积氧化硅层 通过改变工艺条件，其中电源电极的DC偏压变化小于60伏特。

公开(公告)号：US20060160376A1

公开(公告)日：2006-07-20

申请号：US11142124

申请日：2005-06-01

申请人： Deenesh Padhi ,  Ganesh Balasubramanian ,  Annamalai Lakshmanan ,  Zhenjiang Cui ,  Juan Rocha-Alvarez ,  Bok Kim ,  Hichem M'Saad ,  Steven Reiter ,  Francimar Schmitt

发明人： Deenesh Padhi ,  Ganesh Balasubramanian ,  Annamalai Lakshmanan ,  Zhenjiang Cui ,  Juan Rocha-Alvarez ,  Bok Kim ,  Hichem M'Saad ,  Steven Reiter ,  Francimar Schmitt

IPC分类号： H01L21/31

CPC分类号： H01L21/31633 ,  C23C16/029 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/5096 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274

摘要： A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.

摘要翻译： 一种在没有等离子体放电的情况下将布置在单个处理室内的下面的衬底上沉积显示出高粘合强度的有机硅酸盐介电层的方法。 该方法包括将衬底定位在具有动力电极的处理室内，将界面气体混合物流入处理室，界面气体混合物包含一种或多种有机硅化合物和一种或多种氧化性气体，在衬底上沉积氧化硅层 通过改变工艺条件，其中电源电极的DC偏压变化小于60伏特。

公开(公告)号：US07572337B2

公开(公告)日：2009-08-11

申请号：US11131010

申请日：2005-05-16

申请人： Juan Carlos Rocha-Alvarez ,  Ganesh Balasubramanian ,  Tom K. Cho ,  Deenesh Padhi ,  Thomas Nowak ,  Bok Hoen Kim ,  Hichem M'Saad ,  Daemian Raj

发明人： Juan Carlos Rocha-Alvarez ,  Ganesh Balasubramanian ,  Tom K. Cho ,  Deenesh Padhi ,  Thomas Nowak ,  Bok Hoen Kim ,  Hichem M'Saad ,  Daemian Raj

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45574 ,  C23C16/4405 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

摘要： Apparatus and methods for distributing gases into a processing chamber are disclosed. In one embodiment, the apparatus includes a gas distribution plate having a plurality of apertures disposed therethrough and a blocker plate having both a plurality of apertures disposed therethrough and a plurality of feed through passageways disposed therein. A first gas pathway delivers a first gas through the plurality of apertures in the blocker plate and the gas distribution plate. A bypass gas pathway delivers a second gas through the plurality of feed through passageways in the blocker plate and to areas around the blocker plate prior to the second gas passing through the gas distribution plate.

摘要翻译： 公开了将气体分配到处理室中的装置和方法。 在一个实施例中，该装置包括一个气体分配板，该气体分配板具有穿过其中的多个孔，以及一个阻挡板，其具有设置在其间的多个孔和设置在其中的多个进给通道。 第一气体通道通过阻挡板和气体分配板中的多个孔传送第一气体。 旁路气体通道在第二气体通过气体分配板之前，通过多个进料通过阻挡板中的通道和阻塞板周围的区域输送第二气体。

公开(公告)号：US07802538B2

公开(公告)日：2010-09-28

申请号：US11608333

申请日：2006-12-08

申请人： Deenesh Padhi ,  Sohyun Park ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Sohyun Park ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： C23C16/00 ,  C23C16/30 ,  C23C16/455 ,  C23C16/52

CPC分类号： H01L21/31633 ,  C23C16/029 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76841

摘要： A method of forming a graded dielectric layer on an underlying layer including flowing a mixture of a silicon-carbon containing gas, an oxygen containing gas and a carrier gas through a showerhead comprising a blocking plate and a faceplate to form an oxide rich portion of the graded dielectric layer, where the silicon-carbon containing gas has an initial flow rate, flowing the silicon-carbon containing gas at a first intermediate flow rate for about 0.5 seconds or longer, where the first intermediate flow rate is higher than the initial flow rate, and flowing the silicon-carbon containing gas at a fastest flow rate higher than the first intermediate flow rate to form a carbon rich portion of the graded dielectric layer.

摘要翻译： 一种在下层上形成渐变电介质层的方法，包括使含硅碳的气体，含氧气体和载体气体的混合物流过包括阻挡板和面板的喷头，以形成氧化物富集部分 其中含硅碳的气体具有初始流速，使含硅碳的气体以第一中间流速流动约0.5秒或更长，其中第一中间流速高于初始流速 并且使含硅碳的气体以比第一中间流速高的最快流速流动，以形成渐变电介质层的富碳部分。

公开(公告)号：US07166544B2

公开(公告)日：2007-01-23

申请号：US10931609

申请日：2004-09-01

申请人： Deenesh Padhi ,  Sohyun Park ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Sohyun Park ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： H01L21/31

CPC分类号： H01L21/31633 ,  C23C16/029 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76841

摘要： A method of forming a graded dielectric layer on an underlying layer including flowing a mixture of a silicon-carbon containing gas, an oxygen containing gas and a carrier gas through a showerhead comprising a blocking plate and a faceplate to form an oxide rich portion of the graded dielectric layer, where the silicon-carbon containing gas has an initial flow rate, flowing the silicon-carbon containing gas at a first intermediate flow rate for about 0.5 seconds or longer, where the first intermediate flow rate is higher than the initial flow rate, and flowing the silicon-carbon containing gas at a fastest flow rate higher than the first intermediate flow rate to form a carbon rich portion of the graded dielectric layer.

摘要翻译： 一种在下层上形成渐变电介质层的方法，包括使含硅碳的气体，含氧气体和载体气体的混合物流过包括阻挡板和面板的喷头，以形成氧化物富集部分 其中含硅碳的气体具有初始流速，使含硅碳的气体以第一中间流速流动约0.5秒或更长，其中第一中间流速高于初始流速 并且使含硅碳的气体以比第一中间流速高的最快流速流动，以形成渐变电介质层的富碳部分。

公开(公告)号：US20110104400A1

公开(公告)日：2011-05-05

申请号：US12987688

申请日：2011-01-10

申请人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

IPC分类号： C23C26/00 ,  H05H1/24

CPC分类号： H01L21/02115 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/3146

摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

摘要翻译： 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。

公开(公告)号：US20080003824A1

公开(公告)日：2008-01-03

申请号：US11427324

申请日：2006-06-28

申请人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Wtty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Wtty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

IPC分类号： H01L21/302

CPC分类号： H01L21/3146 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/31144

摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

摘要翻译： 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。

公开(公告)号：US20110090613A1

公开(公告)日：2011-04-21

申请号：US12950105

申请日：2010-11-19

申请人： Ganesh Balasubramanian ,  Amit Bansal ,  Eller Y. Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

发明人： Ganesh Balasubramanian ,  Amit Bansal ,  Eller Y. Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

IPC分类号： H01L21/683 ,  H01L21/66 ,  G01R27/02

CPC分类号： H01L21/6831 ,  C23C16/52 ,  H01J37/32431 ,  H01L21/67069 ,  H01L21/67253

摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.

摘要翻译： 本发明通常提供了用于监测和维持等离子体反应器中的基板的平坦度的方法和装置。 本发明的某些实施例提供了一种处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极与平行于静电吸盘的对置电极之间施加RF功率，将DC偏压施加到 静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的虚拟阻抗。

公开(公告)号：US09337072B2

公开(公告)日：2016-05-10

申请号：US12950105

申请日：2010-11-19

申请人： Ganesh Balasubramanian ,  Amit Bansal ,  Eller Y. Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

发明人： Ganesh Balasubramanian ,  Amit Bansal ,  Eller Y. Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

IPC分类号： H02N13/00 ,  H01L21/683 ,  C23C16/52 ,  H01J37/32 ,  H01L21/67

CPC分类号： H01L21/6831 ,  C23C16/52 ,  H01J37/32431 ,  H01L21/67069 ,  H01L21/67253

摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.

摘要翻译： 本发明通常提供了用于监测和维持等离子体反应器中的基板的平坦度的方法和装置。 本发明的某些实施例提供了一种处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极与平行于静电吸盘的对置电极之间施加RF功率，将DC偏压施加到 静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的假想阻抗。

公开(公告)号：US07867578B2

公开(公告)日：2011-01-11

申请号：US11427324

申请日：2006-06-28

申请人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

IPC分类号： H05H1/24

CPC分类号： H01L21/3146 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/31144

摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

摘要翻译： 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。