Abstract:
A switch circuit package module includes a semiconductor switch unit and a capacitor unit. The semiconductor switch unit includes a first semiconductor switch element and a second semiconductor switch element. The first semiconductor switch element includes sub micro-switch elements, each sub micro-switch element configured with a drain electrode and a source electrode. The second semiconductor switch element includes sub micro-switch elements, each sub micro-switch element configured with a drain electrode and a source electrode. The capacitor unit includes a plurality of capacitors. The semiconductor switch unit includes a plurality of common electrodes, each common electrode connects the source electrode of one sub micro-switch element in the first semiconductor switch element with the drain of one sub micro-switch element in the second semiconductor switch element and is disposed adjacent to at least one drain electrode from the first semiconductor switch element or one source electrode from the second semiconductor switch element.
Abstract:
Disclosed herein is a power electronic circuit having a reference ground and a differential mode loop unit. The differential mode loop unit has a capacitance component, a switch and an electronic component, wherein the capacitance component has a first end, the switch has a first end connecting in series with the capacitance component, the electronic component has a first end, the electronic component connects in series with the capacitance component and the switch, the capacitance component and switch are packaged in a power module, the power module has a trace and at least one output pin connected to reference ground, wherein the first end of the switch or the first end of the electronic component is only connected to the first end of the capacitance component through the trace, and the first end of the capacitance component is connected to reference ground through the output pin.
Abstract:
A power module is disclosed. The power module includes a first substrate, a first metal layer, at least one conductive structure and at least one power device. The first metal layer is disposed on the first substrate. The first metal layer has a first thickness d1. The first thickness d1 satisfies: 5 μm≦d1≦50 μm. The conductive structure is disposed at a position different to the first metal layer on the first substrate. The conductive structure has a second thickness d2. The second thickness d2 satisfies: d2≧100 μm. The power device is disposed on the first substrate, the first metal layer or the conductive structure. The driving electrode of the power device is electrically connected to the first metal layer. The power electrode of the power device is electrically coupled to the conductive structure.
Abstract:
A power module includes a heat-dissipating substrate, a first planar power device and a second planar power device. The first planar power device includes a plurality of electrodes disposed on an upper surface of the first planar power device. The second planar power device includes a plurality of electrodes disposed on an upper surface of the second planar power device. Lower surfaces of the first planar power device and the second planar power device are disposed on the heat-dissipating substrate.
Abstract:
A power module includes a heat-dissipating substrate, a first planar power device and a second planar power device. The first planar power device includes a plurality of electrodes disposed on an upper surface of the first planar power device. The second planar power device includes a plurality of electrodes disposed on an upper surface of the second planar power device. Lower surfaces of the first planar power device and the second planar power device are disposed on the heat-dissipating substrate.
Abstract:
A power module includes a heat-dissipating substrate, a first planar power device and a second planar power device. The first planar power device includes a plurality of electrodes disposed on an upper surface of the first planar power device. The second planar power device includes a plurality of electrodes disposed on an upper surface of the second planar power device. Lower surfaces of the first planar power device and the second planar power device are disposed on the heat-dissipating substrate.
Abstract:
A power circuit, control method, power system, and package structure of power circuit are disclosed. The power circuit includes a quasi-cascade power unit. The quasi-cascade power unit includes a normally-on switch, normally-off switch, control unit, first switch unit and second switch unit. The normally-off switch is electrically connected to the normally-on switch in series. The first end and the third end of the control unit are electrically connected to the control end of the normally-off switch and the control end of the normally-on switch, respectively. The first end and the second end of the first switch unit are electrically connected to the control end of the normally-on switch and the second end of the normally-off switch, respectively. The first end and the control end of the second switch unit are electrically connected to the second end of the control unit and the second end of the normally-on switch, respectively.
Abstract:
A switch circuit package module includes a semiconductor switch unit and a capacitor unit. The semiconductor switch unit includes sub micro-switch elements. The capacitor unit is arranged at a periphery of the semiconductor switch unit or stacked on a surface of the semiconductor switch unit, such that impedances of commutation loops between the capacitor unit and the sub micro-switch elements are close to or the same with each other.
Abstract:
A switch circuit package module includes a semiconductor switch unit and a capacitor unit. The semiconductor switch unit includes a first semiconductor switch element and a second semiconductor switch element. The first semiconductor switch element includes sub micro-switch elements, each sub micro-switch element configured with a drain electrode and a source electrode. The second semiconductor switch element includes sub micro-switch elements, each sub micro-switch element configured with a drain electrode and a source electrode. The capacitor unit includes a plurality of capacitors. The semiconductor switch unit includes a plurality of common electrodes, each common electrode connects the source electrode of one sub micro-switch element in the first semiconductor switch element with the drain of one sub micro-switch element in the second semiconductor switch element and is disposed adjacent to at least one drain electrode from the first semiconductor switch element or one source electrode from the second semiconductor switch element.
Abstract:
A switch circuit package module includes at least a semiconductor switch unit and at least a first capacitor unit. The semiconductor switch unit includes a first semiconductor switch element and a second semiconductor switch element. The first semiconductor switch element and the second semiconductor switch element include a plurality of sub micro-switch elements. The capacitor unit includes a plurality of capacitors configured to cooperate with the sub micro-switch elements. The capacitors are arranged in a symmetrical distribution surrounded the semiconductor switch unit, such that impedances of any two symmetrical commutation loops each of which mainly consists of one capacitor and two sub micro-switch elements from the first semiconductor switch element and second semiconductor switch element respectively are close to or the same with each other.