摘要:
A method for making an integrated circuit including vertical junction field effect transistors is disclosed. One embodiment creates a vertical junction field effect transistor using a fault-tolerant or alignment-tolerant production process. The device performance is not harmed, even if misalignments in consecutive semiconductor processing steps occur.
摘要:
A semi-conductor structure for controlling and switching a current has a switch element and an edge element. The switch element contains a first semi-conductor area of a first conductivity type contacted by way of an anode electrode and a cathode electrode, a depletion area that is arranged inside the first semi-conductor area and that can be influenced by a control voltage applied to the control electrode for the purpose of current control, and an island area of a second conductivity type that is buried inside the first semi-conductor area. The edge element contains an edge area of the second conductivity type that is buried inside the first semi-conductive area and that is formed on a common level with the buried island area, in addition to an edge terminating area of a second conductivity type adjacent the edge area.
摘要:
A unipolar semiconductor component having a drift layer is produced by forming the drift layer with a continuously decreasing concentration of a charge carrier doping along the growth direction of the drift layer by way of epitaxial precipitation of the material of the drift layer, which comprises at least one wide band gap material. By using silicon carbide for the drift layer formed by the epitaxial precipitation, a subsequent change of the continuously decreasing concentration of the charge carrier doping due to a diffusion of the dopant atoms in downstream processes is suppressed. The production method can be used in particular to implement a unipolar semiconductor component comprising a drift layer, which component has an advantageous ratio of a comparatively high reverse bias voltage with relatively low forward losses, in a simple and/or cost-effective manner. The unipolar semiconductor component can be an active or passive semiconductor component.
摘要:
A transistor component having a shielding structure. One embodiment provides a source terminal, a drain terminal and control terminal. A source zone of a first conductivity type is connected to the source terminal. A drain zone of the first conductivity type is connected to the drain terminal. A drift zone is arranged between the source zone and the drain zone. A junction control structure is provided for controlling a junction zone in the drift zone between the drain zone and the source zone, at least including one control zone. A shielding structure is arranged in the drift zone between the junction control structure and the drain zone and at least includes a shielding zone of a second conductivity type being complementarily to the first conductivity type. The shielding zone is connected to a terminal for a shielding potential. The at least one control zone and the at least one shielding zone have different geometries or different orientations in a plain that is perpendicular to a current flow direction of the component.
摘要:
A semi-conductor structure for controlling and switching a current has a switch element and an edge element. The switch element contains a first semi-conductor area of a first conductivity type contacted by way of an anode electrode and a cathode electrode, a depletion area that is arranged inside the first semi-conductor area and that can be influenced by a control voltage applied to the control electrode for the purpose of current control, and an island area of a second conductivity type that is buried inside the first semi-conductor area. The edge element contains an edge area of the second conductivity type that is buried inside the first semi-conductive area and that is formed on a common level with the buried island area, in addition to an edge terminating area of a second conductivity type adjacent the edge area.
摘要:
The invention relates to a production method for a unipolar semiconductor component having a drift layer (16), comprising the following step: forming the drift layer (16) with a continuously decreasing concentration of a charge carrier doping (n) along the growth direction (19) of the drift layer (16) by way of epitaxial precipitation of the material of the drift layer (16), which comprises at least one wide band gap material. By using silicon carbide for the drift layer (16) formed by the epitaxial precipitation, a subsequent change of the continuously decreasing concentration of the charge carrier doping (n) due to a diffusion of the dopant atoms in downstream processes is suppressed. The production method can be used in particular to implement a unipolar semiconductor component comprising a drift layer (16), which component has an advantageous ratio of a comparatively high reverse bias voltage with relatively low forward losses, in a simple and/or cost-effective manner. The unipolar semiconductor component can be an active semiconductor component or a passive semiconductor component. The invention furthermore relates to a semiconductor device (10).
摘要:
A transistor component having a shielding structure. One embodiment provides a source terminal, a drain terminal and control terminal. A source zone of a first conductivity type is connected to the source terminal. A drain zone of the first conductivity type is connected to the drain terminal. A drift zone is arranged between the source zone and the drain zone. A junction control structure is provided for controlling a junction zone in the drift zone between the drain zone and the source zone, at least including one control zone. A shielding structure is arranged in the drift zone between the junction control structure and the drain zone and at least includes a shielding zone of a second conductivity type being complementarily to the first conductivity type. The shielding zone is connected to a terminal for a shielding potential. The at least one control zone and the at least one shielding zone have different geometries or different orientations in a plain that is perpendicular to a current flow direction of the component.
摘要:
A method for making an integrated circuit including vertical junction field effect transistors is disclosed. One embodiment creates a vertical junction field effect transistor using a fault-tolerant or alignment-tolerant production process. The device performance is not harmed, even if misalignments in consecutive semiconductor processing steps occur.
摘要:
An integrated vertical SiC—PN power diode has a highly doped SiC semiconductor body of a first conductivity type, a low-doped drift zone of the first conductivity type, arranged above the semiconductor body on the emitter side, an emitter zone of a second conductivity type, applied to the drift zone, and at least one thin intermediate layer of the first conductivity type. The intermediate layer is arranged inside the drift zone, has a higher doping concentration than the drift zone, and divides the drift zone into at least one first anode-side drift zone layer and at least one second cathode-side drift zone layer. There is also disclosed a circuit configuration with such SiC—PN power diodes.
摘要:
A method for manufacturing a silicon carbide single crystal. A silicon carbide single crystal is grown. The crystal has a boron concentration less than 5×1014 cm−3, and a concentration of transition metals impurities less than 5×1014 cm−3. Intrinsic defects in the crystal are minimised. The intrinsic defects include silicon vacancies or carbon vacancies. The crystal is annealed for a desired time at a temperature above 700° C. in an atmosphere containing any of the gases hydrogen or a mixture of hydrogen and an inert gas, such that the density of intrinsic defects and any associated defects is decreased to a concentration low enough to confer to the crystal a desired carrier life time of at least 50 ns at room temperature.