Semiconductor structure with a switch element and an edge element
    2.
    发明申请
    Semiconductor structure with a switch element and an edge element 有权
    具有开关元件和边缘元件的半导体结构

    公开(公告)号:US20050062112A1

    公开(公告)日:2005-03-24

    申请号:US10950027

    申请日:2004-09-24

    CPC分类号: H01L29/0619 H01L29/8083

    摘要: A semi-conductor structure for controlling and switching a current has a switch element and an edge element. The switch element contains a first semi-conductor area of a first conductivity type contacted by way of an anode electrode and a cathode electrode, a depletion area that is arranged inside the first semi-conductor area and that can be influenced by a control voltage applied to the control electrode for the purpose of current control, and an island area of a second conductivity type that is buried inside the first semi-conductor area. The edge element contains an edge area of the second conductivity type that is buried inside the first semi-conductive area and that is formed on a common level with the buried island area, in addition to an edge terminating area of a second conductivity type adjacent the edge area.

    摘要翻译: 用于控制和切换电流的半导体结构具有开关元件和边缘元件。 开关元件包含通过阳极电极和阴极电极接触的第一导电类型的第一半导体区域,设置在第一半导体区域内部并且可受施加的控制电压影响的耗尽区域 到控制电极,以及埋在第一半导体区域内的第二导电类型的岛区。 边缘元件除了具有与第二导电类型相邻的第二导电类型的边缘终止区域之外,还包含第二导电类型的边缘区域,该边缘区域被埋在第一半导电区域内并且与掩埋岛区域形成在公共层上 边缘区域。

    Production method for a unipolar semiconductor component and semiconductor device
    3.
    发明授权
    Production method for a unipolar semiconductor component and semiconductor device 有权
    单极半导体元件和半导体器件的制造方法

    公开(公告)号:US08772140B2

    公开(公告)日:2014-07-08

    申请号:US13383593

    申请日:2010-07-12

    IPC分类号: H01L21/00 H01L29/15

    摘要: A unipolar semiconductor component having a drift layer is produced by forming the drift layer with a continuously decreasing concentration of a charge carrier doping along the growth direction of the drift layer by way of epitaxial precipitation of the material of the drift layer, which comprises at least one wide band gap material. By using silicon carbide for the drift layer formed by the epitaxial precipitation, a subsequent change of the continuously decreasing concentration of the charge carrier doping due to a diffusion of the dopant atoms in downstream processes is suppressed. The production method can be used in particular to implement a unipolar semiconductor component comprising a drift layer, which component has an advantageous ratio of a comparatively high reverse bias voltage with relatively low forward losses, in a simple and/or cost-effective manner. The unipolar semiconductor component can be an active or passive semiconductor component.

    摘要翻译: 具有漂移层的单极半导体部件通过以漂移层的材料的外延沉淀形成漂移层,沿着漂移层的生长方向掺杂电荷载流子的浓度不断降低而形成,该漂移层至少包括 一个宽带隙材料。 通过使用碳化硅作为通过外延沉淀形成的漂移层,由于掺杂剂原子在下游工艺中的扩散而导致的电荷载流子掺杂的连续降低浓度的随后变化被抑制。 该制造方法特别可以以简单和/或成本有效的方式实现包括漂移层的单极半导体元件,该元件具有相对较高的反向偏置电压和相对低的正向损耗的有利比率。 单极半导体元件可以是有源或无源半导体元件。

    TRANSISTOR COMPONENT HAVING A SHIELDING STRUCTURE
    4.
    发明申请
    TRANSISTOR COMPONENT HAVING A SHIELDING STRUCTURE 有权
    具有屏蔽结构的晶体管元件

    公开(公告)号:US20100264467A1

    公开(公告)日:2010-10-21

    申请号:US12426008

    申请日:2009-04-17

    IPC分类号: H01L29/812

    摘要: A transistor component having a shielding structure. One embodiment provides a source terminal, a drain terminal and control terminal. A source zone of a first conductivity type is connected to the source terminal. A drain zone of the first conductivity type is connected to the drain terminal. A drift zone is arranged between the source zone and the drain zone. A junction control structure is provided for controlling a junction zone in the drift zone between the drain zone and the source zone, at least including one control zone. A shielding structure is arranged in the drift zone between the junction control structure and the drain zone and at least includes a shielding zone of a second conductivity type being complementarily to the first conductivity type. The shielding zone is connected to a terminal for a shielding potential. The at least one control zone and the at least one shielding zone have different geometries or different orientations in a plain that is perpendicular to a current flow direction of the component.

    摘要翻译: 具有屏蔽结构的晶体管组件。 一个实施例提供了源极端子,漏极端子和控制端子。 第一导电类型的源极区域连接到源极端子。 第一导电类型的漏极区域连接到漏极端子。 漂移区设置在源区和排水区之间。 提供了结点控制结构,用于控制在漏区和源区之间的漂移区中的接合区,至少包括一个控制区。 屏蔽结构布置在结点控制结构和漏区之间的漂移区中,并且至少包括与第一导电类型互补的第二导电类型的屏蔽区。 屏蔽区域与屏蔽电位端子相连。 所述至少一个控制区域和所述至少一个屏蔽区域在垂直于所述部件的当前流动方向的平原中具有不同的几何形状或不同取向。

    Semiconductor structure with a switch element and an edge element
    5.
    发明授权
    Semiconductor structure with a switch element and an edge element 有权
    具有开关元件和边缘元件的半导体结构

    公开(公告)号:US07071503B2

    公开(公告)日:2006-07-04

    申请号:US10950027

    申请日:2004-09-24

    IPC分类号: H01L29/80

    CPC分类号: H01L29/0619 H01L29/8083

    摘要: A semi-conductor structure for controlling and switching a current has a switch element and an edge element. The switch element contains a first semi-conductor area of a first conductivity type contacted by way of an anode electrode and a cathode electrode, a depletion area that is arranged inside the first semi-conductor area and that can be influenced by a control voltage applied to the control electrode for the purpose of current control, and an island area of a second conductivity type that is buried inside the first semi-conductor area. The edge element contains an edge area of the second conductivity type that is buried inside the first semi-conductive area and that is formed on a common level with the buried island area, in addition to an edge terminating area of a second conductivity type adjacent the edge area.

    摘要翻译: 用于控制和切换电流的半导体结构具有开关元件和边缘元件。 开关元件包含通过阳极电极和阴极电极接触的第一导电类型的第一半导体区域,设置在第一半导体区域内部并且可受施加的控制电压影响的耗尽区域 到控制电极,以及埋在第一半导体区域内的第二导电类型的岛区。 边缘元件除了具有与第二导电类型相邻的第二导电类型的边缘终止区域之外,还包含第二导电类型的边缘区域,该边缘区域被埋在第一半导电区域内并且与掩埋岛区域形成在公共层上 边缘区域。

    Production Method for a Unipolar Semiconductor Component and Semiconductor Device
    6.
    发明申请
    Production Method for a Unipolar Semiconductor Component and Semiconductor Device 有权
    单极半导体元件和半导体器件的制造方法

    公开(公告)号:US20120187419A1

    公开(公告)日:2012-07-26

    申请号:US13383593

    申请日:2010-07-12

    摘要: The invention relates to a production method for a unipolar semiconductor component having a drift layer (16), comprising the following step: forming the drift layer (16) with a continuously decreasing concentration of a charge carrier doping (n) along the growth direction (19) of the drift layer (16) by way of epitaxial precipitation of the material of the drift layer (16), which comprises at least one wide band gap material. By using silicon carbide for the drift layer (16) formed by the epitaxial precipitation, a subsequent change of the continuously decreasing concentration of the charge carrier doping (n) due to a diffusion of the dopant atoms in downstream processes is suppressed. The production method can be used in particular to implement a unipolar semiconductor component comprising a drift layer (16), which component has an advantageous ratio of a comparatively high reverse bias voltage with relatively low forward losses, in a simple and/or cost-effective manner. The unipolar semiconductor component can be an active semiconductor component or a passive semiconductor component. The invention furthermore relates to a semiconductor device (10).

    摘要翻译: 本发明涉及一种具有漂移层(16)的单极半导体元件的制造方法,包括以下步骤:沿着生长方向以电荷载流子掺杂(n)的浓度连续降低形成漂移层(16) 通过漂移层(16)的材料的外延沉淀,其包括至少一个宽带隙材料,漂移层(16)的表面(19)。 通过使用碳化硅作为通过外延沉淀形成的漂移层(16),由于掺杂剂原子在下游工艺中的扩散而导致的电荷载流子掺杂(n)的连续降低浓度的随后变化被抑制。 该制造方法可以特别用于实现包括漂移层(16)的单极半导体元件,该元件具有简单和/或成本有效的具有相对低的前向损耗的较高反向偏置电压的有利比例 方式。 单极半导体部件可以是有源半导体部件或无源半导体部件。 本发明还涉及半导体器件(10)。

    Transistor component having a shielding structure
    7.
    发明授权
    Transistor component having a shielding structure 有权
    具有屏蔽结构的晶体管组件

    公开(公告)号:US08102012B2

    公开(公告)日:2012-01-24

    申请号:US12426008

    申请日:2009-04-17

    IPC分类号: H01L27/088

    摘要: A transistor component having a shielding structure. One embodiment provides a source terminal, a drain terminal and control terminal. A source zone of a first conductivity type is connected to the source terminal. A drain zone of the first conductivity type is connected to the drain terminal. A drift zone is arranged between the source zone and the drain zone. A junction control structure is provided for controlling a junction zone in the drift zone between the drain zone and the source zone, at least including one control zone. A shielding structure is arranged in the drift zone between the junction control structure and the drain zone and at least includes a shielding zone of a second conductivity type being complementarily to the first conductivity type. The shielding zone is connected to a terminal for a shielding potential. The at least one control zone and the at least one shielding zone have different geometries or different orientations in a plain that is perpendicular to a current flow direction of the component.

    摘要翻译: 具有屏蔽结构的晶体管组件。 一个实施例提供了源极端子,漏极端子和控制端子。 第一导电类型的源极区域连接到源极端子。 第一导电类型的漏极区域连接到漏极端子。 漂移区设置在源区和排水区之间。 提供了结点控制结构,用于控制在漏区和源区之间的漂移区中的接合区,至少包括一个控制区。 屏蔽结构布置在结点控制结构和漏区之间的漂移区中,并且至少包括与第一导电类型互补的第二导电类型的屏蔽区。 屏蔽区域与屏蔽电位端子相连。 所述至少一个控制区域和所述至少一个屏蔽区域在垂直于所述部件的当前流动方向的平原中具有不同的几何形状或不同取向。

    SiC-PN power diode
    9.
    发明授权
    SiC-PN power diode 有权
    SiC-PN功率二极管

    公开(公告)号:US07646026B2

    公开(公告)日:2010-01-12

    申请号:US12088298

    申请日:2006-09-19

    IPC分类号: H01L31/00 H01L31/117

    摘要: An integrated vertical SiC—PN power diode has a highly doped SiC semiconductor body of a first conductivity type, a low-doped drift zone of the first conductivity type, arranged above the semiconductor body on the emitter side, an emitter zone of a second conductivity type, applied to the drift zone, and at least one thin intermediate layer of the first conductivity type. The intermediate layer is arranged inside the drift zone, has a higher doping concentration than the drift zone, and divides the drift zone into at least one first anode-side drift zone layer and at least one second cathode-side drift zone layer. There is also disclosed a circuit configuration with such SiC—PN power diodes.

    摘要翻译: 集成的纵向SiC-PN功率二极管具有第一导电类型的高掺杂SiC半导体本体,第一导电类型的低掺杂漂移区,布置在发射极侧的半导体主体上方,具有第二导电性的发射极区 类型,施加到漂移区,以及至少一个第一导电类型的薄中间层。 中间层布置在漂移区内,具有比漂移区更高的掺杂浓度,并将漂移区分成至少一个第一阳极侧漂移区层和至少一个第二阴极侧漂移区层。 还公开了具有这种SiC-PN功率二极管的电路结构。