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    Plasma-assisted doping
    2.
    发明授权
    Plasma-assisted doping 失效
    等离子体辅助掺杂

    公开(公告)号：US07494904B2

    公开(公告)日：2009-02-24

    申请号：US10513397

    申请日：2003-05-07

    申请人： Satyendra Kumar ,  Devendra Kumar

    发明人： Satyendra Kumar ,  Devendra Kumar

    IPC分类号： H01L21/26 ,  H01L21/42

    CPC分类号： H01L21/2236 ,  H01J37/32339 ,  H01J37/32412 ,  H05B6/806

    摘要： Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for various doping processes. In one embodiment, a substrate (250) can be doped by forming a plasma (610) in a cavity (285) by subjecting a gas to an amount of electromagnetic radiation in the presence of a plasma catalyst (240) and adding at least one dopant material to the plasma. The material is then allowed to penetrate into the substrate. Various active and passive catalysts are provided.

    摘要翻译： 提供了用于点燃，调制和维持用于各种掺杂过程的等离子体的方法和装置。 在一个实施例中，可以通过在等离子体催化剂（240）的存在下使气体经受一定量的电磁辐射而在空腔（285）中形成等离子体（610）来掺杂衬底（250），并且添加至少一个 掺杂剂材料。 然后使材料渗入基材。 提供了各种主动和被动催化剂。

    Surface cleaning and sterilization
    3.
    发明授权
    Surface cleaning and sterilization 失效
    表面清洗灭菌

    公开(公告)号：US07432470B2

    公开(公告)日：2008-10-07

    申请号：US11384126

    申请日：2006-03-17

    申请人： Satyendra Kumar ,  Devendra Kumar ,  Dominique Tasch ,  Raimund Stroebel

    发明人： Satyendra Kumar ,  Devendra Kumar ,  Dominique Tasch ,  Raimund Stroebel

    IPC分类号： B23K10/00

    CPC分类号： H05H1/46 ,  H05H2001/4607

    摘要： Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for various plasma processes and treatments. Such treatments include cleaning and sterilizing parts. In some embodiments, a plasma is ignited by subjecting a gas in a multi-mode processing cavity to electromagnetic radiation having a frequency between about 1 MHz and about 333 GHz in the presence of a plasma catalyst. A part can be cleaned by, for example, inserting hydrogen into the plasma and exposing the part to the hydrogen-enriched plasma. A part can be sterilized by heating the part with the plasma.

    摘要翻译： 提供了用于点燃，调节和维持用于各种等离子体处理和处理的等离子体的方法和装置。 这些处理包括清洁和消毒部件。 在一些实施例中，等离子体通过使多模式处理腔中的气体在等离子体催化剂的存在下具有在约1MHz和约333GHz之间的频率的电磁辐射来点燃。 可以通过例如将氢插入等离子体中并将该部分暴露于富氢等离子体来清洁部件。 可以通过用等离子体加热部件来消毒零件。

    Atmospheric Processing Using Microwave-Generated Plasmas
    4.
    发明申请
    Atmospheric Processing Using Microwave-Generated Plasmas 审中-公开
    使用微波产生等离子体的大气处理

    公开(公告)号：US20080129208A1

    公开(公告)日：2008-06-05

    申请号：US11667180

    申请日：2005-11-01

    申请人： Satyendra Kumar ,  Devendra Kumar ,  Mike L. Dougherty ,  Kuruvilla Cherian

    发明人： Satyendra Kumar ,  Devendra Kumar ,  Mike L. Dougherty ,  Kuruvilla Cherian

    IPC分类号： H05H1/46 ,  B23K9/00 ,  B23K1/012

    CPC分类号： B23K1/012 ,  C23C8/38 ,  C23C26/02 ,  H01J37/32192

    摘要： An atmospheric plasma processing system is presented. In accordance with embodiments of the present invention, an atmospheric pressure plasma microwave processing apparatus includes a processing area or chamber wherein parts are processed; at least one multi-mode microwave reactor coupled to receive parts for processing; at least one magnetron coupled to at least one multi-mode microwave reactor to provide microwave energy; and a delivery system coupled to at least one multi-mode microwave reactor to deliver the parts into and out of at least one reactor, wherein a plasma can be generated at atmospheric pressure and provided to the parts in at least one multi-mode microwave reactor.

    摘要翻译： 提出了一种大气等离子体处理系统。 根据本发明的实施例，大气压等离子体微波处理设备包括处理区域或室，其中处理部件; 耦合以接收用于处理的部件的至少一个多模式微波反应器; 耦合到至少一个多模微波反应器以提供微波能量的至少一个磁控管; 以及耦合到至少一个多模微波反应器以将部件输送到至少一个反应器中的输送系统，其中等离子体可以在大气压下产生并提供给至少一个多模微波反应器中的部件 。

    Plasma-assisted processing in a manufacturing line
    5.
    发明申请
    Plasma-assisted processing in a manufacturing line 失效

    公开(公告)号：US20060081567A1

    公开(公告)日：2006-04-20

    申请号：US10513605

    申请日：2003-05-07

    申请人： Michael Dougherty ,  Devendra Kumar ,  Satyendra Kumar

    发明人： Michael Dougherty ,  Devendra Kumar ,  Satyendra Kumar

    IPC分类号： B23K9/00

    CPC分类号： B23K10/02 ,  H05H1/46 ,  H05H2001/4607

    摘要： Methods and apparatus are provided for plasma-assisted processing multiple work pieces in a manufacturing line. In one embodiment, the method can include placing the work pieces in movable carriers, moving the carriers on a conveyor into an irradiation zone, flowing a gas into the irradiation zone, igniting the gas in the irradiation zone to form a plasma (e.g., by subjecting the gas to electromagnetic radiation in the presence of a plasma catalyst), sustaining the plasma for a period of time sufficient to at least partially plasma process at least one of the work pieces in the irradiation zone, and advancing the conveyor to move the at least one plasma-processed work piece out of the irradiation zone. Various types of plasma catalysts are also provided.

    Plasma-assisted coating
    6.
    发明申请
    Plasma-assisted coating 审中-公开
    等离子体辅助涂层

    公开(公告)号：US20050233091A1

    公开(公告)日：2005-10-20

    申请号：US10513221

    申请日：2003-05-07

    申请人： Devendra Kumar ,  Satyendra Kumar

    发明人： Devendra Kumar ,  Satyendra Kumar

    IPC分类号： C23C16/00 ,  C23C16/452 ,  H05H1/24

    CPC分类号： C23C16/452 ,  B82Y30/00 ,  H01J37/3244 ,  H05H1/46 ,  H05H2001/4607

    摘要： Methods and apparatus are provided for igniting, modulating, and sustaining plasma (615) for various coating processes. In one embodiment, the surface of an object can be coated (247) by forming plasma in a cavity (230) with walls (232) by subjecting a gas to an amount of electromagnetic radiation power via electrode (270) and a voltage supply (275) in the presence of a plasma catalyst (240) in mount (245) and adding at least one coating material to the plasma. The material is allowed to deposit on the surface of the object (250) on mount (260) to form a coating (247). Various plasma catalysts are also provided.

    摘要翻译： 提供用于点燃，调节和维持等离子体（615）的方法和装置用于各种涂覆过程。 在一个实施例中，可以通过经由电极（270）和电压源（270）将气体经受一定量的电磁辐射功率，通过在具有壁（232）的空腔（230）中形成等离子体来涂覆物体的表面（247） 275），并且在所述等离子体中添加至少一种涂层材料。 允许材料沉积在载体（260）上的物体（250）的表面上以形成涂层（247）。 还提供了各种等离子体催化剂。

    Plasma-assisted nitrogen surface-treatment
    8.
    发明授权
    Plasma-assisted nitrogen surface-treatment 失效
    等离子辅助氮表面处理

    公开(公告)号：US07465362B2

    公开(公告)日：2008-12-16

    申请号：US10513607

    申请日：2003-05-07

    申请人： Devendra Kumar ,  Satyendra Kumar

    发明人： Devendra Kumar ,  Satyendra Kumar

    IPC分类号： C23C8/36

    CPC分类号： B82Y30/00 ,  C23C8/02 ,  C23C8/36

    摘要： Methods and systems (10) for plasma-assisted nitrogen surface-treatments are provided. The method can include subjecting a gas (24) to electromagnetic radiation (26) in the presence of a plasma catalyst (100, 120, 140) to initiate a plasma containing nitrogen. The surface region of an object can be exposed to the plasma for a period of time sufficient to transfer at least some of the nitrogen from the plasma to the object through the surface region.

    摘要翻译： 提供了等离子体辅助氮表面处理的方法和系统（10）。 该方法可以包括在等离子体催化剂（100,120,140）的存在下使气体（24）进行电磁辐射（26）以引发含有氮的等离子体。 物体的表面区域可以暴露于等离子体足以将至少一些氮从等离子体传递到物体的时间段通过表面区域。