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公开(公告)号:US07027270B2
公开(公告)日:2006-04-11
申请号:US10208509
申请日:2002-07-30
申请人: Dimitar V. Dimitrov , Insik Jin , Declan Macken , Robert W. Lamberton , Xuefei Tang , Johannes van Ek , Thomas R. Boonstra
发明人: Dimitar V. Dimitrov , Insik Jin , Declan Macken , Robert W. Lamberton , Xuefei Tang , Johannes van Ek , Thomas R. Boonstra
IPC分类号: G11B5/127
CPC分类号: B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3116 , G11B5/3903 , G11B2005/3996
摘要: The magnetoresistive sensor has a bottom shield, a nonmagnetic metallic pedestal, a bottom reader gap, a biasing element, a magnetoresistive stack, current leads, a top reader gap, and a top shield. The nonmagnetic metallic pedestal is positioned on a portion of the bottom shield and the nonmagnetic metallic pedestal has a width less than the width of the bottom shield. The bottom reader gap is positioned on the nonmagnetic metallic pedestal and on the bottom shield such that a portion of the bottom reader gap over the nonmagnetic metallic pedestal is raised relative to portions of the bottom reader gap not over the nonmagnetic metallic pedestal.
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2.
公开(公告)号:US20100117051A1
公开(公告)日:2010-05-13
申请号:US12269507
申请日:2008-11-12
申请人: Wei Tian , Venkatram Venkatasamy , Ming Sun , Michael Xuefei Tang , Insik Jin , Dimitar V. Dimitrov
发明人: Wei Tian , Venkatram Venkatasamy , Ming Sun , Michael Xuefei Tang , Insik Jin , Dimitar V. Dimitrov
CPC分类号: H01L27/2472 , H01L21/76816 , H01L23/5226 , H01L27/228 , H01L27/2436 , H01L43/08 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要: A memory cell that includes a first contact having a first surface and an opposing second surface; a second contact having a first surface and an opposing second surface; a memory material layer having a first surface and an opposing second surface; and a nanoporous layer having a first surface and an opposing second surface, the nanoporous layer including at least one nanopore and dielectric material, the at least one nanopore being substantially filled with a conductive metal, wherein a surface of the nanoporous layer is in contact with a surface of the first contact or the second contact and the second surface of the nanoporous layer is in contact with a surface of the memory material layer.
摘要翻译: 一种存储单元,包括具有第一表面和相对的第二表面的第一触点; 具有第一表面和相对的第二表面的第二触点; 存储材料层,其具有第一表面和相对的第二表面; 以及具有第一表面和相对的第二表面的纳米多孔层,所述纳米多孔层包括至少一个纳米孔和介电材料,所述至少一个纳米孔基本上填充有导电金属,其中所述纳米多孔层的表面与 第一接触面或第二接触面的表面和纳米多孔层的第二表面与记忆材料层的表面接触。
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3.
公开(公告)号:US07750386B2
公开(公告)日:2010-07-06
申请号:US12269507
申请日:2008-11-12
申请人: Wei Tian , Venkatram Venkatasamy , Ming Sun , Michael Xuefei Tang , Insik Jin , Dimitar V. Dimitrov
发明人: Wei Tian , Venkatram Venkatasamy , Ming Sun , Michael Xuefei Tang , Insik Jin , Dimitar V. Dimitrov
IPC分类号: H01L29/76 , H01L21/8242
CPC分类号: H01L27/2472 , H01L21/76816 , H01L23/5226 , H01L27/228 , H01L27/2436 , H01L43/08 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要: A memory cell that includes a first contact having a first surface and an opposing second surface; a second contact having a first surface and an opposing second surface; a memory material layer having a first surface and an opposing second surface; and a nanoporous layer having a first surface and an opposing second surface, the nanoporous layer including at least one nanopore and dielectric material, the at least one nanopore being substantially filled with a conductive metal, wherein a surface of the nanoporous layer is in contact with a surface of the first contact or the second contact and the second surface of the nanoporous layer is in contact with a surface of the memory material layer.
摘要翻译: 一种存储单元,包括具有第一表面和相对的第二表面的第一触点; 具有第一表面和相对的第二表面的第二触点; 存储材料层,其具有第一表面和相对的第二表面; 以及具有第一表面和相对的第二表面的纳米多孔层,所述纳米多孔层包括至少一个纳米孔和介电材料,所述至少一个纳米孔基本上被导电金属填充,其中所述纳米多孔层的表面与 第一接触面或第二接触面的表面和纳米多孔层的第二表面与记忆材料层的表面接触。
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4.
公开(公告)号:US06385016B1
公开(公告)日:2002-05-07
申请号:US09660087
申请日:2000-09-12
申请人: Johannes van Ek , Martin L. Plumer , Richard P. Michel , Michael C. Kautzky , Dimitar V. Dimitrov
发明人: Johannes van Ek , Martin L. Plumer , Richard P. Michel , Michael C. Kautzky , Dimitar V. Dimitrov
IPC分类号: G11B539
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/40 , G11B2005/3996
摘要: A magnetic read head having an air bearing surface, a magnetoresistive sensor, an insulator layer, and first and second current contacts. The magnetoresistive sensor has a first portion adjacent to the air bearing surface and a second portion distal from the air bearing surface. The first and second current contacts are positioned in electrical contact with opposite edges of the first portion of the magnetoresistive sensor, and the insulator layer is positioned between the second portion of the magnetoresistive sensor and each of the first and second current contacts.
摘要翻译: 具有空气轴承表面的磁读头,磁阻传感器,绝缘体层以及第一和第二电流触点。 磁阻传感器具有与空气支承表面相邻的第一部分和远离空气支承表面的第二部分。 第一和第二电流触点定位成与磁阻传感器的第一部分的相对边缘电接触,并且绝缘体层位于磁阻传感器的第二部分和第一和第二电流触点中的每一个之间。
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5.
公开(公告)号:US20100117170A1
公开(公告)日:2010-05-13
申请号:US12269537
申请日:2008-11-12
CPC分类号: H01L43/08 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3286 , H01F10/329
摘要: A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement layer forms an interface either between the free layer and the non-magnetic spacer layer or the pinned layer and the non-magnetic spacer layer.
摘要翻译: 具有铁磁性钉扎层,铁磁性自由层,其间的非磁性间隔层的磁性元件以及位于自由层和被钉扎层之间的多孔非导电电流限制层。 电流限制层在自由层和非磁性间隔层之间或被钉扎层和非磁性间隔层之间形成界面。
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公开(公告)号:US08766230B2
公开(公告)日:2014-07-01
申请号:US12857717
申请日:2010-08-17
IPC分类号: H01L45/00
CPC分类号: H01L45/085 , G11C16/0475 , H01L45/1206 , H01L45/1266 , H01L45/143 , H01L45/1658
摘要: Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region; and a gate stack structure over the substrate and between the source region and drain region. The gate stack structure includes a first solid electrolyte cell and a second solid electrolyte cell. The solid electrolyte cells having a capacitance that is controllable between at least two states. A gate contact layer is electrically coupled to a voltage source. The first solid electrolyte cell and the second solid electrolyte cell separate the gate contact layer from the substrate.
摘要翻译: 公开了具有可编程电容的非易失性多位存储器。 说明性的数据存储单元包括一个包括源极区和漏极区的衬底; 以及在衬底上以及在源极区和漏极区之间的栅叠层结构。 栅堆叠结构包括第一固体电解质电池和第二固体电解质电池。 固体电解质电池具有在至少两个状态之间可控制的电容。 栅极接触层电耦合到电压源。 第一固体电解质电池和第二固体电解质电池将栅极接触层与基板分离。
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7.
公开(公告)号:US08456903B2
公开(公告)日:2013-06-04
申请号:US12904254
申请日:2010-10-14
CPC分类号: H01L43/08 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3286 , H01F10/329
摘要: A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement layer forms an interface either between the free layer and the non-magnetic spacer layer or the pinned layer and the non-magnetic spacer layer.
摘要翻译: 具有铁磁性钉扎层,铁磁性自由层,其间的非磁性间隔层的磁性元件以及位于自由层和被钉扎层之间的多孔非导电电流限制层。 电流限制层在自由层和非磁性间隔层之间或被钉扎层和非磁性间隔层之间形成界面。
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8.
公开(公告)号:US07826181B2
公开(公告)日:2010-11-02
申请号:US12269537
申请日:2008-11-12
CPC分类号: H01L43/08 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3286 , H01F10/329
摘要: A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement layer forms an interface either between the free layer and the non-magnetic spacer layer or the pinned layer and the non-magnetic spacer layer.
摘要翻译: 具有铁磁性钉扎层,铁磁性自由层,其间的非磁性间隔层的磁性元件以及位于自由层和被钉扎层之间的多孔非导电电流限制层。 电流限制层在自由层和非磁性间隔层之间或被钉扎层和非磁性间隔层之间形成界面。
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9.
公开(公告)号:US20110026321A1
公开(公告)日:2011-02-03
申请号:US12904254
申请日:2010-10-14
CPC分类号: H01L43/08 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3286 , H01F10/329
摘要: A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement layer forms an interface either between the free layer and the non-magnetic spacer layer or the pinned layer and the non-magnetic spacer layer.
摘要翻译: 具有铁磁性钉扎层,铁磁性自由层,其间的非磁性间隔层的磁性元件以及位于自由层和被钉扎层之间的多孔非导电电流限制层。 电流限制层在自由层和非磁性间隔层之间或被钉扎层和非磁性间隔层之间形成界面。
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公开(公告)号:US07786463B2
公开(公告)日:2010-08-31
申请号:US12123685
申请日:2008-05-20
IPC分类号: H01L45/00
CPC分类号: H01L45/085 , G11C16/0475 , H01L45/1206 , H01L45/1266 , H01L45/143 , H01L45/1658
摘要: Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region. A first insulating layer is over the substrate. A first solid electrolyte cell is over the insulating layer and has a capacitance that is controllable between at least two states and is proximate the source region. A second solid electrolyte cell is over the insulating layer and has a capacitance or resistance that is controllable between at least two states and is proximate the drain region. An insulating element isolates the first solid electrolyte cell from the second solid electrolyte cell. A first anode is electrically coupled to the first solid electrolyte cell. The first solid electrolyte cell is between the anode and the insulating layer. A second anode is electrically coupled to the second solid electrolyte cell. The second solid electrolyte cell is between the anode and the insulating layer. A gate contact layer is over the substrate and between the source region and drain region and in electrical connection with the first anode and the second anode. The gate contact layer is electrically coupled to a voltage source.
摘要翻译: 公开了具有可编程电容的非易失性多位存储器。 说明性数据存储单元包括包括源极区和漏极区的衬底。 第一绝缘层在衬底上。 第一固体电解质电池在绝缘层之上并且具有在至少两个状态之间可控并且在源极区附近的电容。 第二固体电解质电池在绝缘层之上,并且具有在至少两个状态之间可控的并且在漏极区附近的电容或电阻。 绝缘元件将第一固体电解质电池与第二固体电解质电池隔离。 第一阳极电耦合到第一固体电解质电池。 第一固体电解质电池在阳极和绝缘层之间。 第二阳极电耦合到第二固体电解质电池。 第二固体电解质电池在阳极和绝缘层之间。 栅极接触层在衬底上并且在源极区域和漏极区域之间并且与第一阳极和第二阳极电连接。 栅极接触层电耦合到电压源。
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