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    Method of forming a recessed polysilicon filled trench
    3.
    发明授权
    Method of forming a recessed polysilicon filled trench 有权
    形成凹陷多晶硅填充沟槽的方法

    公开(公告)号：US06559030B1

    公开(公告)日：2003-05-06

    申请号：US10015987

    申请日：2001-12-13

    申请人： Thai Doan ,  Zhong-Xiang He ,  Michael P. McMahon

    发明人： Thai Doan ,  Zhong-Xiang He ,  Michael P. McMahon

    IPC分类号： H01L2176

    CPC分类号： H01L21/763

    摘要： A method of forming a recessed polysilicon contact is provided. The method includes: forming a trench in a substrate; overfilling the trench with polysilicon; removing the polysilicon outside of the trench to provide a substantially planar surface; oxidizing the surface of the polysilicon in the trench using plasma oxidation; and removing an upper portion of the polysilicon from the trench.

    摘要翻译： 提供一种形成凹陷多晶硅接触的方法。 该方法包括：在衬底中形成沟槽; 用多晶硅填满沟槽; 去除沟槽之外的多晶硅以提供基本平坦的表面; 使用等离子体氧化来氧化沟槽中多晶硅的表面; 以及从沟槽去除多晶硅的上部。

    TRANSISTOR AND METHOD OF FORMING THE TRANSISTOR SO AS TO HAVE REDUCED BASE RESISTANCE
    9.
    发明申请
    TRANSISTOR AND METHOD OF FORMING THE TRANSISTOR SO AS TO HAVE REDUCED BASE RESISTANCE 审中-公开
    晶体管和形成晶体管的方法具有降低的基极电阻

    公开(公告)号：US20120313146A1

    公开(公告)日：2012-12-13

    申请号：US13155730

    申请日：2011-06-08

    申请人： Marc W. Cantell ,  Thai Doan ,  Jessica A. Levy ,  Qizhi Liu ,  William J. Murphy ,  Christa R. Willets

    发明人： Marc W. Cantell ,  Thai Doan ,  Jessica A. Levy ,  Qizhi Liu ,  William J. Murphy ,  Christa R. Willets

    IPC分类号： H01L29/737 ,  H01L21/331 ,  H01L29/73

    CPC分类号： H01L29/66234 ,  H01L21/8222 ,  H01L29/0804 ,  H01L29/0817 ,  H01L29/66242 ,  H01L29/66272 ,  H01L29/732 ,  H01L29/7378

    摘要： Disclosed is a transistor structure, having a completely silicided extrinsic base for reduced base resistance Rb. Specifically, a metal silicide layer covers the extrinsic base, including the portion of the extrinsic base that extends below the upper portion of a T-shaped emitter. One exemplary technique for ensuring that the metal silicide layer covers this portion of the extrinsic base requires tapering the upper portion of the emitter. Such tapering allows a sacrificial layer below the upper portion of the emitter to be completely removed during processing, thereby exposing the extrinsic base below and allowing the metal layer required for silicidation to be deposited thereon. This metal layer can be deposited, for example, using a high pressure sputtering technique to ensure that all exposed surfaces of the extrinsic base, even those below the upper portion of the emitter, are covered.

    摘要翻译： 公开了一种晶体管结构，具有完全硅化的外基，用于降低碱电阻Rb。 具体地说，金属硅化物层覆盖外部基体，包括在T形发射体的上部下方延伸的外部基底部分。 用于确保金属硅化物层覆盖外部基极的这一部分的一个示例性技术需要使发射极的上部逐渐变细。 这种锥形允许在处理期间完全去除发射器上部下方的牺牲层，从而将外部基底暴露在下面，并使硅化物所需的金属层沉积在其上。 例如，可以使用高压溅射技术来沉积该金属层，以确保外部基底的所有暴露表面，甚至覆盖在发射体上部以下的那些。