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    Engineering emission wavelengths in laser and light emitting devices
    7.
    发明授权
    Engineering emission wavelengths in laser and light emitting devices 有权
    激光和发光器件中的工程发射波长

    公开(公告)号：US08242480B2

    公开(公告)日：2012-08-14

    申请号：US12821643

    申请日：2010-06-23

    申请人： Lionel C. Kimerling ,  Jifeng Liu ,  Jurgen Michel

    发明人： Lionel C. Kimerling ,  Jifeng Liu ,  Jurgen Michel

    IPC分类号： H01L29/12

    CPC分类号： H01L33/30 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3403 ,  H01S5/34333

    摘要： A light emitting device is provided that includes at least one first semiconductor material layers and at least one second semiconductor material layers. At least one near-direct band gap material layers are positioned between the at least one first semiconductor layers and the at least one second semiconductor material layers. The at least one first semiconductor layers and the at least one second material layers have a larger band gap than the at least one near-direct band gap material layers. The at least one near-direct band gap material layers have an energy difference between the direct and indirect band gaps of less than 0.5 eV.

    摘要翻译： 提供一种发光器件，其包括至少一个第一半导体材料层和至少一个第二半导体材料层。 至少一个近直接带隙材料层位于至少一个第一半导体层和至少一个第二半导体材料层之间。 所述至少一个第一半导体层和所述至少一个第二材料层具有比所述至少一个近直接带隙材料层更大的带隙。 所述至少一个近直接带隙材料层具有小于0.5eV的直接和间接带隙之间的能量差。

    Confined Lateral Growth of Crystalline Material
    8.
    发明申请
    Confined Lateral Growth of Crystalline Material 审中-公开
    结晶材料的限制横向生长

    公开(公告)号：US20120025195A1

    公开(公告)日：2012-02-02

    申请号：US13191682

    申请日：2011-07-27

    申请人： Kevin Andrew McComber ,  Jifeng Liu ,  Jurgen Michel ,  Lionel C. Kimerling

    发明人： Kevin Andrew McComber ,  Jifeng Liu ,  Jurgen Michel ,  Lionel C. Kimerling

    IPC分类号： H01L29/161 ,  C30B19/00 ,  H01L21/203 ,  C30B23/04 ,  H01L21/208 ,  B05C11/00 ,  C30B25/04

    CPC分类号： C30B25/18 ,  C23C16/04 ,  C23C16/06 ,  C30B23/04 ,  C30B25/04 ,  C30B29/08 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L27/1281 ,  H01L29/66742 ,  H01L29/78684

    摘要： In a structure for crystalline material growth, there is provided a lower growth confinement layer and an upper growth confinement layer that is disposed above and vertically separated from the lower growth confinement layer. A lateral growth channel is provided between the upper and lower growth confinement layers, and is characterized by a height that is defined by the vertical separation between the upper and lower growth confinement layers. A growth seed is disposed at a site in the lateral growth channel for initiating crystalline material growth in the channel. A growth channel outlet is included for providing formed crystalline material from the growth channel. With this growth confinement structure, crystalline material can be grown from the growth seed to the lateral growth channel outlet.

    摘要翻译： 在结晶材料生长的结构中，提供了较低的生长限制层和上部生长约束层，其设置在下部生长限制层的上方并与之垂直分离。 在上部和下部生长限制层之间提供横向生长通道，其特征在于由上部和下部生长限制层之间的垂直分隔限定的高度。 将生长种子设置在横向生长通道中的位置以引发通道中的结晶材料生长。 包括生长通道出口用于从生长通道提供形成的结晶材料。 利用这种生长限制结构，可以将结晶物质从生长种子生长到侧生长通道出口。

    ENGINEERING EMISSION WAVELENGTHS IN LASER AND LIGHT EMITTING DEVICES
    9.
    发明申请
    ENGINEERING EMISSION WAVELENGTHS IN LASER AND LIGHT EMITTING DEVICES 有权
    在激光和发光器件中的工程辐射波长

    公开(公告)号：US20110316018A1

    公开(公告)日：2011-12-29

    申请号：US12821643

    申请日：2010-06-23

    申请人： Lionel C. Kimerling ,  Jifeng Liu ,  Jurgen Michel

    发明人： Lionel C. Kimerling ,  Jifeng Liu ,  Jurgen Michel

    IPC分类号： H01L33/02 ,  H01L33/00

    CPC分类号： H01L33/30 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3403 ,  H01S5/34333

    摘要： A light emitting device is provided that includes at least one first semiconductor material layers and at least one second semiconductor material layers. At least one near-direct band gap material layers are positioned between the at least one first semiconductor layers and the at least one second semiconductor material layers. The at least one first semiconductor layers and the at least one second material layers have a larger band gap than the at least one near-direct band gap material layers. The at least one near-direct band gap material layers have an energy difference between the direct and indirect band gaps of less than 0.5 eV.

    摘要翻译： 提供一种发光器件，其包括至少一个第一半导体材料层和至少一个第二半导体材料层。 至少一个近直接带隙材料层位于至少一个第一半导体层和至少一个第二半导体材料层之间。 所述至少一个第一半导体层和所述至少一个第二材料层具有比所述至少一个近直接带隙材料层更大的带隙。 所述至少一个近直接带隙材料层具有小于0.5eV的直接和间接带隙之间的能量差。

    Vertically-integrated waveguide photodetector apparatus and related coupling methods
    10.
    发明授权
    Vertically-integrated waveguide photodetector apparatus and related coupling methods 有权
    垂直集成波导光电探测器及相关耦合方法

    公开(公告)号：US07305157B2

    公开(公告)日：2007-12-04

    申请号：US11269355

    申请日：2005-11-08

    申请人： Donghwan Ahn ,  Jifeng Liu ,  Jurgen Michel ,  Lionel C. Kimerling

    发明人： Donghwan Ahn ,  Jifeng Liu ,  Jurgen Michel ,  Lionel C. Kimerling

    IPC分类号： G02B6/12

    CPC分类号： G02B6/12004 ,  G02B6/1228 ,  G02B6/4201 ,  G02B2006/12061

    摘要： High-speed optoelectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.

    摘要翻译： 具有与CMOS处理技术通用兼容的方法制造具有与光电检测器密集地集成并有效耦合的光波导的高速光电子器件。 在各种实施方案中，波导基本上由单晶硅组成，并且光电检测器包含或基本上由外延生长的锗或锗浓度超过约90％的硅 - 锗合金构成。