公开(公告)号：US20050140473A1

公开(公告)日：2005-06-30

申请号：US10934672

申请日：2004-09-03

申请人： Dong-Suk Jun ,  Hong-Yeol Lee ,  Sang-Seok Lee ,  Kyoung-Suk Ko ,  Dong-Young Kim ,  Kyoung-Ik Cho

发明人： Dong-Suk Jun ,  Hong-Yeol Lee ,  Sang-Seok Lee ,  Kyoung-Suk Ko ,  Dong-Young Kim ,  Kyoung-Ik Cho

IPC分类号： H01P1/203

CPC分类号： H01P1/203

摘要： A microstrip cross coupling bandpass filter includes an input port, an input resonator, an output port, and an output resonator. The input port and the input resonator are electric-coupled, and the output port and the output resonator are electric-coupled. A cross coupling gap corresponding to the distance between the input and output resonators forms magnetic coupling. The bandpass filter further includes a cross coupling line electric-coupled with the input and output ports. The cross coupling gap generates an attenuation pole on the high side of a passband. The attenuation frequency of the attenuation pole can be varied with the distance of the cross coupling gap. The cross coupling line generates an attenuation pole on the high and low sides of the passband.

摘要翻译： 微带交叉耦合带通滤波器包括输入端口，输入谐振器，输出端口和输出谐振器。 输入端口和输入谐振器是电耦合的，输出端口和输出谐振器是电耦合的。 对应于输入和输出谐振器之间的距离的交叉耦合间隙形成磁耦合。 带通滤波器还包括与输入和输出端口电耦合的交叉耦合线。 交叉耦合间隙在通带的高侧产生衰减极。 衰减极的衰减频率可以随着交叉耦合间隙的距离而变化。 交叉耦合线在通带的高低侧产生衰减极。

公开(公告)号：US06472802B1

公开(公告)日：2002-10-29

申请号：US09471892

申请日：1999-12-23

申请人： Sung-Yool Choi ,  Mun-Cheol Paek ,  Kyoung-Ik Cho ,  Jeen Hur ,  Gi-Pyung Han

发明人： Sung-Yool Choi ,  Mun-Cheol Paek ,  Kyoung-Ik Cho ,  Jeen Hur ,  Gi-Pyung Han

IPC分类号： H01J102

CPC分类号： H01J3/022 ,  H01J31/127

摘要： A triode-type field emission device includes an insulating substrate; a cathode formed on the insulating substrate; a field emitter aligned on the cathode, wherein the field emitter includes a plurality of emitter tips and each emitter tip has the diameter of nanometers; an insulating layer positioned around the field emitter for electrically isolating the field emitter; and a gate electrode formed on the insulating layer, wherein the gate electrode is closed to an upper portion of the field emitter. Therefore, the triode-type field emission device may be operable in a low voltage.

摘要翻译： 三极管型场发射器件包括绝缘衬底; 形成在绝缘基板上的阴极; 在阴极上对准的场发射体，其中场发射器包括多个发射极尖端，并且每个发射极尖端具有纳米的直径; 围绕场发射器定位的绝缘层，用于电场隔离场致发射体; 以及形成在所述绝缘层上的栅电极，其中所述栅电极与所述场发射体的上部相接。 因此，三极管型场发射器件可以在低电压下工作。

公开(公告)号：US06486047B2

公开(公告)日：2002-11-26

申请号：US09872279

申请日：2001-05-31

申请人： Won-Jae Lee ,  In-Kyu You ,  Yil-Suk Yang ,  Byoung-Gon Yu ,  Kyoung-Ik Cho

发明人： Won-Jae Lee ,  In-Kyu You ,  Yil-Suk Yang ,  Byoung-Gon Yu ,  Kyoung-Ik Cho

IPC分类号： H01L2126

CPC分类号： H01L21/0228 ,  C23C16/409 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/50 ,  H01L21/02194 ,  H01L21/02197 ,  H01L21/02274 ,  H01L21/31691 ,  Y10S438/905

摘要： An apparatus for forming Strontium-Tantalum-Oxide films and a method thereof using an atomic layer deposition tool are provided. In the Strontium-Tantalum-Oxide films deposited by using plasma and the atomic layer deposition, its leakage-current is very low, and its dielectric constant has a range of 30 to 100 depending on the there heating conditions. Therefore, the method provides structures for i) an insulating film of an NDRO-type ferroelectric memory device that has a structure of Metal-film/Ferroelectric-film/Insulating-film/Silicon, ii) a gate oxide film substituting for silicon oxide film, and iii) an insulating film of Electro Luminescent Display (ELD) device.

摘要翻译： 提供一种用于形成锶钽氧化物膜的装置及其使用原子层沉积工具的方法。 在通过使用等离子体和原子层沉积沉积的锶钽氧化物膜中，其漏电流非常低，并且其介电常数的范围为30至100，这取决于那里的加热条件。 因此，该方法提供了i）具有金属膜/铁电体/绝缘膜/硅的结构的NDRO型铁电体存储元件的绝缘膜的结构，ii）用氧化硅膜代替的栅极氧化膜 ，和iii）电致发光显示器（ELD）装置的绝缘膜。

公开(公告)号：US5939833A

公开(公告)日：1999-08-17

申请号：US951177

申请日：1997-10-15

申请人： Yoon-Ho Song ,  Jin-Ho Lee ,  Kyoung-Ik Cho ,  Hyung-Joun Yoo

发明人： Yoon-Ho Song ,  Jin-Ho Lee ,  Kyoung-Ik Cho ,  Hyung-Joun Yoo

IPC分类号： H01J29/96 ,  G09F9/30 ,  G09G3/20 ,  G09G3/22 ,  H01J1/30 ,  H01J29/04 ,  H01J31/12 ,  H04N9/12 ,  G09G3/10

CPC分类号： G09G3/22 ,  H01J31/127 ,  G09G2300/08 ,  G09G3/2014 ,  H01J2201/30426 ,  H01J2201/319

摘要： The present invention relates to a field emission display which applies a field emission device (or field emitter) to a flat panel display. The field emission display in accordance with the present invention has the lower plate in which the pixel array and the scan and data driving circuits are integrated one insulating substrate, therefore, it is possible to implement a field emission display capable of providing a high quality picture in a low price. The voltage is applied to the scan and data driving circuits may considerably decrease through the tin film transistor attached to each pixel. The field emission characteristics are stabilized by the resistor attached to the field emission device so that reliable field emission display may be fabricated. Further, since all the processes are carried out at a low temperature, a glass, which is low in price and has a large area, may be used as an insulating substrate.

摘要翻译： 本发明涉及将场致发射器件（或场发射极）施加到平板显示器上的场发射显示器。 根据本发明的场发射显示器具有其中像素阵列和扫描和数据驱动电路集成在一个绝缘基板上的下板，因此，可以实现能够提供高质量图像的场致发射显示 价格低廉。 电压被施加到扫描，并且数据驱动电路可以通过连接到每个像素的锡膜晶体管显着地减小。 场发射特性通过附着在场发射器件上的电阻来稳定，从而可以制造可靠的场发射显示。 此外，由于所有的工艺都是在低温下进行的，所以价格低廉且面积大的玻璃可以用作绝缘基板。

公开(公告)号：US06917633B2

公开(公告)日：2005-07-12

申请号：US10376455

申请日：2003-03-03

申请人： Ho-Young Kim ,  Eun-Soo Nam ,  Kyoung-Ik Cho

发明人： Ho-Young Kim ,  Eun-Soo Nam ,  Kyoung-Ik Cho

IPC分类号： H01S3/05 ,  H01S3/067 ,  H01S3/08 ,  H01S3/082 ,  H01S3/1055 ,  H01S3/16 ,  H01S3/10 ,  H01S3/083

CPC分类号： H01S3/06791 ,  H01S3/06725 ,  H01S3/0675 ,  H01S3/08022 ,  H01S3/082 ,  H01S3/1055 ,  H01S3/1608

摘要： There is provided a millimeter wave band frequency optical oscillator predicted to be used as a millimeter wave oscillating frequency signal source in a base station of a millimeter wave wireless transmission system. The optical oscillator has a double resonator structure in which a pair of wavelength tunable fiber grating mirrors are inserted into a unilateral fiber-ring laser resonator in order to internally and additionally form a linear laser resonator. The double resonator structure composed of the two stable laser resonators can oscillate laser of two modes. Due to a beat phenomenon occurring between the two modes, received laser is modulated to an ultra-speed frequency of 60 GHz or greater. A variation in the gain within a resonator is induced by a polarization controller using the dependency of laser modes upon polarization. A modulation frequency is consecutively changed from 60 GHz to 80 GHz by controlling the wavelength of light reflected by the fiber grating mirrors.

摘要翻译： 提供了在毫米波无线传输系统的基站中预测用作毫米波振荡频率信号源的毫米波段频率光学振荡器。 光学振荡器具有双谐振器结构，其中一对波长可调光纤光栅镜被插入到单边光纤环激光谐振器中，以便在内部并另外形成线性激光谐振器。 由两个稳定的激光谐振器组成的双谐振器结构可以振荡两种模式的激光。 由于在两种模式之间发生拍子现象，所接收的激光器被调制到60GHz或更大的超速频率。 谐振器内增益的变化由偏振控制器引起，该偏振控制器使用激光模式对极化的依赖性。 通过控制由光纤光栅镜反射的光的波长，调制频率从60GHz连续地变化到80GHz。

公开(公告)号：US06648712B2

公开(公告)日：2003-11-18

申请号：US10263580

申请日：2002-10-02

申请人： Sung-Yool Choi ,  Mun-Cheol Paek ,  Kyoung-Ik Cho ,  Jeen Hur ,  Gi-Pyung Han

发明人： Sung-Yool Choi ,  Mun-Cheol Paek ,  Kyoung-Ik Cho ,  Jeen Hur ,  Gi-Pyung Han

IPC分类号： H01J904

CPC分类号： H01J3/022 ,  H01J31/127

摘要： A triode-type field emission device includes an insulating substrate; a cathode formed on the insulating substrate; a field emitter aligned on the cathode, wherein the field emitter includes a plurality of emitter tips and each emitter tip has the diameter of nanometers; an insulating layer positioned around the field emitter for electrically isolating the field emitter; and a gate electrode formed on the insulating layer, wherein the gate electrode is closed to an upper portion of the field emitter. Therefore, the triode-type field emission device may be operable in a low voltage.

公开(公告)号：US06690116B2

公开(公告)日：2004-02-10

申请号：US09872285

申请日：2001-05-31

申请人： Yoon-Ho Song ,  Young-Rae Cho ,  Seung-Youl Kang ,  Moon-Youn Jung ,  Chi-Sun Hwang ,  Jin-Ho Lee ,  Kyoung-Ik Cho

发明人： Yoon-Ho Song ,  Young-Rae Cho ,  Seung-Youl Kang ,  Moon-Youn Jung ,  Chi-Sun Hwang ,  Jin-Ho Lee ,  Kyoung-Ik Cho

IPC分类号： G09G310

CPC分类号： H01J31/127

摘要： A high-resolution field emission display that applies a field emission device (or a field emission array) being an electron source element to a flat panel display device. The field emission display includes an upper plate and a lower plate that face each other, wherein the lower plate and the upper plate are vacuum-packaged in parallel positions. A dot pixel of the lower plate includes a high-voltage amorphous silicon thin film transistor formed on the glass substrate of the lower plate, a diode type field emission film partially formed on the drain of the high-voltage amorphous silicon TFT, a passivation insulation layer formed on the high-voltage amorphous silicon TFT and the lateral side of the diode type field emission film, and an electron beam focusing electrode/light-shading film which vertically overlaps with the high-voltage amorphous silicon TFT on some parts of the passivation insulation layer and is formed on a lateral side of the diode type field emission film. A dot pixel of the upper plate includes a transparent electrode formed on the glass substrate of the upper plate, and a red, green or blue phosphor formed on some parts of the transparent electrode. Therefore, the high-resolution field emission display device can obtain an effect of focusing the electron beam trajectory and a light-shading effect for the TFT at the same time, and thus remarkably enhance the performance and the resolution of the field emission display.

摘要翻译： 一种高分辨率场致发射显示器，其将作为电子源元件的场发射器件（或场致发射阵列）应用于平板显示器件。 场发射显示器包括彼此面对的上板和下板，其中下板和上板被平行地真空包装。 下板的点像素包括形成在下板的玻璃基板上的高压非晶硅薄膜晶体管，部分地形成在高压非晶硅TFT的漏极上的二极管型场致发射膜，钝化绝缘层 在高电压非晶硅TFT上形成的层和二极管型场致发射膜的侧面，以及与钝化的一些部分上的高压非晶硅TFT垂直重叠的电子束聚焦电极/遮光膜 并且形成在二极管型场致发射膜的侧面上。 上板的点像素包括形成在上板的玻璃基板上的透明电极和形成在透明电极的一些部分上的红色，绿色或蓝色荧光体。 因此，高分辨率场致发射显示装置可以同时获得对TFT的电子束轨迹和遮光效果的聚焦效果，从而显着提高场发射显示的性能和分辨率。

公开(公告)号：US06682383B2

公开(公告)日：2004-01-27

申请号：US09860397

申请日：2001-05-17

申请人： Young-Rae Cho ,  Jin-Ho Lee ,  Yoon-Ho Song ,  Seung-Youl Kang ,  Moon-Youn Jung ,  Kyoung-Ik Cho ,  Do-Hyung Kim ,  Chi-Sun Hwang

发明人： Young-Rae Cho ,  Jin-Ho Lee ,  Yoon-Ho Song ,  Seung-Youl Kang ,  Moon-Youn Jung ,  Kyoung-Ik Cho ,  Do-Hyung Kim ,  Chi-Sun Hwang

IPC分类号： H01J1304

CPC分类号： H01J9/025 ,  H01J2201/30403

摘要： A cathode structure for a field emission device, which is an essential component of a field emission device, and a method of fabricating the same are provided. An emitter material for electron emission constituting cathodes is formed in a particulate emitter, the particulate emitter is formed of a material from which electrons can be easily emitted at a low electric field. A significant advantage of the present invention over a conventional art is that the present invention patterns an emitter material to a cathode electrode using a photolithography process or a lift-off process. In the lift-off process, the emitting compound is patterned using a sacrifice layer. Also, in another embodiment of the present invention, there is disclosed a method of easily fabricating cathodes for a triode-type field emission device using a particulate emitter material at a low process temperature. Therefore, the present invention provides a method of fabricating a cathode for a triode-type field emission device using particulate emitter that is synthesized at a high temperature of 600° C. over, as the emitter material.

摘要翻译： 提供了场致发射器件的阴极结构及其制造方法。 用于形成阴极的电子发射用发射体材料形成在颗粒状发射体中，微粒发射体由电子能够以低电场容易地发射的材料形成。 本发明相对于传统技术的显着优点是本发明使用光刻工艺或剥离工艺将发射极材料图案化成阴极电极。 在剥离过程中，使用牺牲层对发光化合物进行图案化。 此外，在本发明的另一个实施例中，公开了一种在低工艺温度下使用颗粒发射体材料容易地制造用于三极管型场致发射器件的阴极的方法。 因此，本发明提供一种使用在600℃的高温下合成的粒子发射体作为发射极材料的三极管型场致发射器件的阴极的制造方法。

公开(公告)号：US5314833A

公开(公告)日：1994-05-24

申请号：US996052

申请日：1992-12-23

申请人： Kyung-Ho Lee ,  Kyoung-Ik Cho ,  Yong-Tak Lee

发明人： Kyung-Ho Lee ,  Kyoung-Ik Cho ,  Yong-Tak Lee

IPC分类号： H01L29/812 ,  H01L21/22 ,  H01L21/225 ,  H01L21/265 ,  H01L21/338

CPC分类号： H01L29/66871 ,  H01L21/2258 ,  H01L21/2654 ,  H01L21/26553 ,  H01L21/2656

摘要： A method of manufacturing a GaAs field effect transistor comprises depositing a silicon thin film 202 on a semi-insulating semiconductor substrate 201, forming a first sensitive film 203 by a photolithography to define channel areas and ion-implanting n-type dopants into the substrate to form an activation layer, removing the first sensitive film, forming a second sensitive film 203a on the silicon thin film by photolithography to define an ohmic contact area and then forming a highly doped impurity layer on the side of the activation layer by way of an ion-implantation process, depositing a passivation film 206 over the entire surface of the substrate 201 after the removal of the sensitive film, and effecting an annealing or heat treatment, forming a third sensitive film of a predetermined pattern by using an ohmic contact forming mask, effecting a recess etching process to the surface of the substrate and forming an ohmic contact on the etched portion, and patterning a gate region by using the gate forming mask, recess-etching the surface of the substrate and depositing a low resistivity metal to form a gate.

摘要翻译： 制造GaAs场效应晶体管的方法包括在半绝缘半导体衬底201上沉积硅薄膜202，通过光刻法形成第一敏感膜203，以将沟道区域和离子注入n型掺杂剂定义到衬底中 形成激活层，去除第一敏感膜，通过光刻在硅薄膜上形成第二敏感膜203a以限定欧姆接触面积，然后通过离子在激活层侧上形成高度掺杂的杂质层 在移除敏感膜之后，在衬底201的整个表面上沉积钝化膜206，进行退火或热处理，通过使用欧姆接触形成掩模形成预定图案的第三感光膜， 对衬底的表面进行凹陷蚀刻工艺，并在蚀刻部分上形成欧姆接触，并且通过栅极区域图案化 使用栅极形成掩模，凹陷蚀刻衬底的表面并沉积低电阻率金属以形成栅极。

公开(公告)号：US20100155684A1

公开(公告)日：2010-06-24

申请号：US12479640

申请日：2009-06-05

申请人： Sung-Yool CHOI ,  Hu-Young Jeong ,  In-Kyu You ,  Kyoung-Ik Cho

发明人： Sung-Yool CHOI ,  Hu-Young Jeong ,  In-Kyu You ,  Kyoung-Ik Cho

IPC分类号： H01L47/00 ,  H01L21/20 ,  H01L29/12

CPC分类号： H01L45/10 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/165

摘要： Provided are a non-volatile memory device and a method of forming the non-volatile memory device. The non-volatile memory device includes a substrate, a lower electrode on the substrate, a diffusion barrier preventing the diffusion of a space charge on the lower electrode, a charge storage layer having a space charge limited characteristic on the diffusion barrier, and an upper electrode on the charge storage layer.

摘要翻译： 提供了一种非易失性存储器件和形成非易失性存储器件的方法。 非易失性存储器件包括衬底，衬底上的下电极，阻止下电极上的空间电荷的扩散的扩散阻挡层，在扩散阻挡层上具有空间电荷限制特性的电荷存储层，以及上部 电极在电荷存储层上。