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18 条记录 (耗时 0.028 秒)

    Nanotube assembly including protective layer and method for making the same
    1.
    发明申请
    Nanotube assembly including protective layer and method for making the same 审中-公开
    纳米管总成包括保护层及其制造方法

    公开(公告)号：US20080020499A1

    公开(公告)日：2008-01-24

    申请号：US11223135

    申请日：2005-09-12

    申请人： Dong-Wook Kim ,  Li-Han Chen ,  Sungho Jin ,  In Yoo

    发明人： Dong-Wook Kim ,  Li-Han Chen ,  Sungho Jin ,  In Yoo

    IPC分类号： H01L21/00

    CPC分类号： B82Y40/00 ,  B82Y10/00 ,  B82Y30/00 ,  C01B32/162 ,  C01B2202/36 ,  H01L51/0048

    摘要： Nanotube assemblies and methods for manufacturing the same, including one or more protective layers. A nanotube assembly may include a substrate, a nanotube array, formed on the substrate, and a protective layer, formed on a first area of the substrate where the nanotube array is not, the protective layer reducing the formation of nanocones, and promoting the formation of nanotubes, which make up the nanotube array.

    摘要翻译： 纳米管组件及其制造方法，包括一个或多个保护层。 纳米管组件可以包括形成在衬底上的衬底，纳米管阵列和形成在衬底的第一区域上的保护层，其中纳米管阵列不是，保护层减少纳米骨的形成并促进形成 的纳米管，构成纳米管阵列。

    Sidewall tracing nanoprobes, method for making the same, and method for use
    7.
    发明授权
    Sidewall tracing nanoprobes, method for making the same, and method for use 有权
    侧壁跟踪纳米探针，制作方法和使用方法

    公开(公告)号：US08245318B2

    公开(公告)日：2012-08-14

    申请号：US12375161

    申请日：2007-07-27

    申请人： Sungho Jin ,  Li-Han Chen ,  Gregory Dahlen ,  Hao-Chih Liu

    发明人： Sungho Jin ,  Li-Han Chen ,  Gregory Dahlen ,  Hao-Chih Liu

    IPC分类号： G01Q70/12

    CPC分类号： G01Q60/38 ,  G01Q70/12

    摘要： Sidewall tracing nanoprobes, in which the tip shape of the nanoprobe Is altered so that the diameter or width of the very tip of the probe is wider than the diameter of the supporting stem. Such side protruding probe tips are fabricated by a subtractive method of reducing the stem diameter, an additive method of increasing the tip diameter, or sideway bending of the probe tip. These sidewall tracing nanoprobes are useful for inspection of semiconductor devices, especially to quantitatively evaluate the defects on the side wall of trenches or via holes.

    摘要翻译： 侧壁跟踪纳米探针，其中纳米探针的尖端形状被改变，使得探针的尖端的直径或宽度比支撑杆的直径宽。 这种侧突出的探针尖端通过减小茎直径的减法方法，增加尖端直径的添加方法或探针尖端的侧向弯曲来制造。 这些侧壁跟踪纳米探针可用于检查半导体器件，特别是定量评估沟槽或通孔侧壁上的缺陷。

    Tactile shear sensor using anisotropically conductive material
    8.
    发明授权
    Tactile shear sensor using anisotropically conductive material 失效
    使用各向异性导电材料的触觉剪切传感器

    公开(公告)号：US5313840A

    公开(公告)日：1994-05-24

    申请号：US969626

    申请日：1992-10-30

    申请人： Li-Han Chen ,  Sungho Jin

    发明人： Li-Han Chen ,  Sungho Jin

    IPC分类号： G01B7/00 ,  G01D5/165 ,  G01D5/252 ,  G01L1/20 ,  G01L1/26 ,  G01L5/22 ,  H01R13/24 ,  G01L1/00

    CPC分类号： H01R13/2414 ,  G01D5/252 ,  G01L1/20 ,  G01L5/228

    摘要： In accordance with the present invention, a tactile sensor capable of detecting shear force comprises an anisotropically conductive material disposed between a conductive cursor and an array of contacts. In one preferred embodiment, the anisotropic material is affixed to the contact array, and the cursor is affixed to an elastomeric skin overlying the material. Movement of the cursor is detected by interconnection of the contacts underlying the cursor. In a second embodiment, the anisotropic material is affixed to the cursor but is free to move over the contact array in response to shear force. Movement of the cursor is detected by interconnection of the underlying contacts. Such arrangements can also detect pressure and temperature.

    摘要翻译： 根据本发明，能够检测剪切力的触觉传感器包括设置在导电光标和触点阵列之间的各向异性导电材料。 在一个优选实施例中，将各向异性材料固定到接触阵列上，并将光标固定在覆盖材料的弹性体皮肤上。 通过光标下面的触点的互连来检测光标的移动。 在第二实施例中，各向异性材料固定到光标上，但是响应于剪切力自由地在接触阵列上移动。 通过底层联系人的互连来检测光标的移动。 这种布置也可以检测压力和温度。

    Catalytically Grown Mano-Bent Nanostructure and Method for Making the Same
    9.
    发明申请
    Catalytically Grown Mano-Bent Nanostructure and Method for Making the Same 审中-公开
    催化生长的人造纳米结构及其制备方法

    公开(公告)号：US20070207318A1

    公开(公告)日：2007-09-06

    申请号：US11632688

    申请日：2005-07-20

    申请人： Sungho Jin ,  Li-Han Chen ,  Joseph AuBuchon

    发明人： Sungho Jin ,  Li-Han Chen ,  Joseph AuBuchon

    IPC分类号： H05H1/24 ,  B32B9/00

    CPC分类号： B82Y40/00 ,  B81B2203/0361 ,  B81C1/00103 ,  B82B3/00 ,  B82Y30/00 ,  C01B32/162 ,  Y10T428/30

    摘要： Elongated nanostructures and a method of fabricating elongated nanostructures with one or more sharp A bends using a plasma enhanced chemical vapor deposition process comprising placing an anode above the nanostructure and a cathode below the nanostructure, applying a voltage between the anode and cathode to create electric field lines, and changing the direction of the electric field lines during the fabrication of the nanostructure. Device applications using such structures are also disclosed.

    摘要翻译： 伸长的纳米结构和使用等离子体增强化学气相沉积工艺制造具有一个或多个尖锐A弯曲的细长纳米结构的方法，包括将纳米结构上方的阳极和纳米结构下方的阴极放置在阳极和阴极之间施加电压以产生电场 线，并且在纳米结构的制造期间改变电场线的方向。 还公开了使用这种结构的装置应用。

    Process for fabricating improved iron-cobalt magnetostrictive alloy and article comprising alloy
    10.
    发明授权
    Process for fabricating improved iron-cobalt magnetostrictive alloy and article comprising alloy 有权
    制备改进的铁 - 钴磁致伸缩合金和包含合金的制品的方法

    公开(公告)号：US06299703B1

    公开(公告)日：2001-10-09

    申请号：US09500855

    申请日：2000-02-09

    申请人： Li-Han Chen ,  Sungho Jin ,  Timothy J. Klemmer ,  Hareesh Mavoori

    发明人： Li-Han Chen ,  Sungho Jin ,  Timothy J. Klemmer ,  Hareesh Mavoori

    IPC分类号： H01F1147

    CPC分类号： H01F1/0306 ,  C22C19/07 ,  G02B6/022 ,  H01L41/20

    摘要： An article comprising an alloy exhibiting high magnetostriction in relatively low applied magnetic fields is provided, the alloy capable of being formed in a relatively easy manner and having desirable physical properties. The Co—Fe alloy of the invention exhibits a magnetostriction of at least 100×10−6 in a magnetic field less than 400 Oe, advantageously in a magnetic field less than 100 Oe. The alloy is formed by plastically deforming the alloy, e.g., by cold rolling, to a reduction in cross-sectional area of at least 50%, and then heat treating the alloy to induce recrystallization. This combination of plastic deformation and recrystallization was found to provide desirable grain growth and microstructure. The resultant alloy is useful in a variety of device components, including transducers, frequency filters, signal delay lines, and optical fiber grating devices.

    摘要翻译： 提供了一种在相对低的施加磁场中包含具有高磁致伸缩性的合金的制品，该合金能够以相对容易的方式形成并且具有期望的物理性能。 本发明的Co-Fe合金在小于400Oe的磁场中表现出至少100×10 -6的磁致伸缩，有利地在小于100Oe的磁场中。 该合金通过例如冷轧使合金发生塑性变形，形成至少为50％的横截面积的减少，然后对该合金进行热处理以引发再结晶。 发现塑性变形和重结晶的组合提供了理想的晶粒生长和微结构。 所得合金可用于各种器件部件，包括换能器，频率滤波器，信号延迟线和光纤光栅器件。