公开(公告)号：US20160284923A1

公开(公告)日：2016-09-29

申请号：US14866239

申请日：2015-09-25

申请人： Michael C. Johnson ,  Taiqing Qiu ,  David D. Smith ,  Peter John Cousins ,  Staffan Westerberg

发明人： Michael C. Johnson ,  Taiqing Qiu ,  David D. Smith ,  Peter John Cousins ,  Staffan Westerberg

IPC分类号： H01L31/18 ,  H01L31/0224

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a thin dielectric layer on a surface of a substrate by radical oxidation or plasma oxidation of the surface of the substrate. The method also involves forming a silicon layer over the thin dielectric layer. The method also involves forming a plurality of emitter regions from the silicon layer.

摘要翻译： 本文描述了制造太阳能电池的方法和所得到的太阳能电池。 在一个示例中，制造太阳能电池的方法包括通过基底表面的自由基氧化或等离子体氧化在基板的表面上形成薄的电介质层。 该方法还涉及在薄介电层上形成硅层。 该方法还涉及从硅层形成多个发射极区域。

公开(公告)号：US20170179310A1

公开(公告)日：2017-06-22

申请号：US14971846

申请日：2015-12-16

申请人： Staffan Westerberg ,  Alejandro Levander ,  Peter John Cousins

发明人： Staffan Westerberg ,  Alejandro Levander ,  Peter John Cousins

IPC分类号： H01L31/0236 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/047 ,  H01L31/0216

CPC分类号： H01L31/02366 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/047 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/547

摘要： Solar cell fabrication using laser patterning of ion-implanted etch-resistant layers, and the resulting solar cells, are described. In an example, a back contact solar cell includes an N-type single crystalline silicon substrate having a light-receiving surface and a back surface. Alternating continuous N-type emitter regions and segmented P-type emitter regions are disposed on the back surface of the N-type single crystalline silicon substrate, with gaps between segments of the segmented P-type emitter regions. Trenches are included in the N-type single crystalline silicon substrate between the alternating continuous N-type emitter regions and segmented P-type emitter regions and in locations of the gaps between segments of the segmented P-type emitter regions. An approximately Gaussian distribution of P-type dopants is included in the N-type single crystalline silicon substrate below the segmented P-type emitter regions. A maximum concentration of the approximately Gaussian distribution of P-type dopants is approximately in the center of each of the segmented P-type emitter regions between first and second sides of each of the segmented P-type emitter regions. Substantially vertical P/N junctions are included in the N-type single crystalline silicon substrate at the trenches formed in locations of the gaps between segments of the segmented P-type emitter regions.

公开(公告)号：US09306085B2

公开(公告)日：2016-04-05

申请号：US13591641

申请日：2012-08-22

申请人： Staffan Westerberg ,  Peter John Cousins

发明人： Staffan Westerberg ,  Peter John Cousins

IPC分类号： H01L31/044 ,  H01L31/0224 ,  H01L31/05

CPC分类号： H01L31/022441 ,  H01L31/022433 ,  H01L31/0516 ,  Y02E10/50

摘要： A solar cell includes negative metal contact fingers and positive metal contact fingers. The negative metal contact fingers are interdigitated with the positive metal contact fingers. The metal contact fingers, both positive and negative, have a radial design where they radially extend to surround at least 25% of a perimeter of a corresponding contact pad. The metal contact fingers have bend points, which collectively form a radial pattern with a center point within the contact pad. Exactly two metal contact pads merge into a single leading metal contact pad that is wider than either of the exactly two metal contact pads.

摘要翻译： 太阳能电池包括负金属接触指和正金属接触指。 负金属接触指与正金属接触指指相互交错。 金属接触指，正极和负极都具有径向设计，其中它们径向延伸以包围相应接触垫的周边的至少25％。 金属接触指具有弯曲点，它们共同形成具有接触垫内的中心点的径向图案。 恰好两个金属接触焊盘合并成一个单一的导电金属接触焊盘，其宽度比正好两个金属接触焊盘之一宽。

公开(公告)号：US09246046B1

公开(公告)日：2016-01-26

申请号：US14498850

申请日：2014-09-26

申请人： Scott Harrington ,  Venkatasubramani Balu ,  Staffan Westerberg ,  Peter John Cousins

发明人： Scott Harrington ,  Venkatasubramani Balu ,  Staffan Westerberg ,  Peter John Cousins

IPC分类号： H01L21/00 ,  H01L31/20 ,  H01L31/18 ,  H01L31/068 ,  H01L31/0288 ,  H01L31/0352

CPC分类号： H01L31/1804 ,  H01L31/022441 ,  H01L31/035281 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of fabricating a solar cell can include forming a first dopant region over a silicon substrate and an oxide region over the first dopant region. In an embodiment, the oxide region can protect the first dopant region from a first etching process. In an embodiment, a second dopant region can be formed over the silicon substrate, where a mask can be formed to protect a first portion of the second dopant region from the first etching process. In an embodiment, the first etching process can be performed to expose portions of the silicon substrate and/or a silicon region. A second etching process can be performed to form a trench region to separate a first and second doped region of the solar cell. A third etching process can be performed to remove contaminants from the solar cell and remove any remaining portions of the oxide region.

公开(公告)号：US20160064576A1

公开(公告)日：2016-03-03

申请号：US14939633

申请日：2015-11-12

申请人： Andy Luan ,  David D. Smith ,  Peter John Cousins ,  Sheng Sun

发明人： Andy Luan ,  David D. Smith ,  Peter John Cousins ,  Sheng Sun

IPC分类号： H01L31/02 ,  H01L31/0216

CPC分类号： H01L31/02008 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/0682 ,  Y02E10/547

摘要： Leakage pathway layers for solar cells and methods of forming leakage pathway layers for solar cells are described.

摘要翻译： 描述了用于太阳能电池的泄漏路径层和形成用于太阳能电池的泄漏路径层的方法。

公开(公告)号：US08450134B2

公开(公告)日：2013-05-28

申请号：US12945555

申请日：2010-11-12

申请人： Denis De Ceuster ,  Peter John Cousins ,  David D. Smith

发明人： Denis De Ceuster ,  Peter John Cousins ,  David D. Smith

IPC分类号： H01L31/18

CPC分类号： H01L31/0682 ,  H01L31/02008 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/028 ,  H01L31/035272 ,  H01L31/035281 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.

摘要翻译： 太阳能电池包括在诸如硅晶片的衬底的背面上的多晶硅P型和N型掺杂区域。 中断的沟槽结构在一些位置中将P型掺杂区域与N型掺杂区域分离，但是允许P型掺杂区域和N型掺杂区域在其它位置接触。 P型和N型掺杂区中的每一个可以形成在薄的电介质层上。 除了其它优点之外，所得的太阳能电池结构允许提高效率，同时具有相对较低的反向击穿电压。

公开(公告)号：US07851698B2

公开(公告)日：2010-12-14

申请号：US12392923

申请日：2009-02-25

申请人： Denis De Ceuster ,  Peter John Cousins ,  David D. Smith

发明人： Denis De Ceuster ,  Peter John Cousins ,  David D. Smith

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L31/0682 ,  H01L31/02008 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/028 ,  H01L31/035272 ,  H01L31/035281 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.

摘要翻译： 太阳能电池包括在诸如硅晶片的衬底的背面上的多晶硅P型和N型掺杂区域。 中断的沟槽结构在一些位置中将P型掺杂区域与N型掺杂区域分离，但是允许P型掺杂区域和N型掺杂区域在其它位置接触。 P型和N型掺杂区中的每一个可以形成在薄的电介质层上。 除了其它优点之外，所得的太阳能电池结构允许提高效率，同时具有相对较低的反向击穿电压。

公开(公告)号：US08692111B2

公开(公告)日：2014-04-08

申请号：US13298136

申请日：2011-11-16

申请人： Taeseok Kim ,  Gabriel Harley ,  David D. Smith ,  Peter John Cousins

发明人： Taeseok Kim ,  Gabriel Harley ,  David D. Smith ,  Peter John Cousins

IPC分类号： H01L21/00 ,  H01L31/00

CPC分类号： H01L31/1804 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547 ,  Y02P70/521

摘要： Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Throughput of the solar cell ablation process is improved by incorporating linear base diffusion regions with narrow width, for example as compared to an overlying metal contact. Throughput of the solar cell ablation process may also be improved by having contact holes to base diffusion regions that are perpendicular to contact holes to emitter diffusion regions. To allow for continuous laser scanning, a laser blocking layer may be located over an interlayer dielectric to prevent contact hole formation on certain regions, such as regions where a metal contact of one polarity may electrically shunt to a diffusion region of opposite polarity. In a hybrid design, a solar cell may have both linear and dotted base diffusion regions. An electro-optical modulator may be employed to allow for continuous laser scanning in dotted base diffusion designs.

摘要翻译： 通过激光烧蚀形成太阳能电池的接触孔，以适应各种太阳能电池设计。 通过结合具有窄宽度的线性基极扩散区域，例如与覆盖的金属接触相比，改善了太阳能电池烧蚀过程的吞吐量。 通过将与接触孔垂直的基底扩散区域的接触孔设置到发射极扩散区，也可以改善太阳能电池烧蚀过程的吞吐量。 为了允许连续激光扫描，激光阻挡层可以位于层间电介质上方，以防止在某些区域（例如一个极性的金属接触可以电分流到相反极性的扩散区域的区域）上的接触孔形成。 在混合设计中，太阳能电池可以具有线性和点状的基极扩散区域。 可以使用电光调制器来允许在虚点扩散设计中的连续激光扫描。

公开(公告)号：US08673673B2

公开(公告)日：2014-03-18

申请号：US13872961

申请日：2013-04-29

申请人： Denis De Ceuster ,  Peter John Cousins ,  David D. Smith

发明人： Denis De Ceuster ,  Peter John Cousins ,  David D. Smith

IPC分类号： H01L31/18

CPC分类号： H01L31/0682 ,  H01L31/02008 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/028 ,  H01L31/035272 ,  H01L31/035281 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.

摘要翻译： 太阳能电池包括在诸如硅晶片的衬底的背面上的多晶硅P型和N型掺杂区域。 中断的沟槽结构在一些位置中将P型掺杂区域与N型掺杂区域分离，但是允许P型掺杂区域和N型掺杂区域在其它位置接触。 P型和N型掺杂区中的每一个可以形成在薄的电介质层上。 除了其它优点之外，所得的太阳能电池结构允许提高效率，同时具有相对较低的反向击穿电压。

公开(公告)号：US08586403B2

公开(公告)日：2013-11-19

申请号：US13028059

申请日：2011-02-15

申请人： Gabriel Harley ,  David D. Smith ,  Tim Dennis ,  Ann Waldhauer ,  Taeseok Kim ,  Peter John Cousins

发明人： Gabriel Harley ,  David D. Smith ,  Tim Dennis ,  Ann Waldhauer ,  Taeseok Kim ,  Peter John Cousins

IPC分类号： H01L21/00

CPC分类号： H01L31/02168 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.

摘要翻译： 通过激光烧蚀形成太阳能电池的接触孔，以适应各种太阳能电池设计。 通过用具有基本上均匀的厚度的膜代替在扩散区上形成的膜来促进使用激光来形成接触孔。 接触孔可以形成到深扩散区域，以增加激光烧蚀过程边缘。 可以调整激光器配置以通过不同厚度的介电膜形成接触孔。