公开(公告)号：US06395651B1

公开(公告)日：2002-05-28

申请号：US09111084

申请日：1998-07-07

申请人： Douglas M. Smith ,  Teresa Ramos ,  Kevin H. Roderick ,  Stephen Wallace ,  James Drage ,  Hui-Jung Wu ,  Neil Viernes ,  Lisa B. Brungardt

发明人： Douglas M. Smith ,  Teresa Ramos ,  Kevin H. Roderick ,  Stephen Wallace ,  James Drage ,  Hui-Jung Wu ,  Neil Viernes ,  Lisa B. Brungardt

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/3125 ,  H01L21/31695 ,  Y10T428/31663

摘要： The present invention relates to low dielectric constant nanoporous silica films and to processes for their manufacture. A substrate, e.g., a wafer suitable for the production of an integrated circuit, having a plurality of raised lines and/or electronic elements present on its surface, is provided with a relatively high porosity, low dielectric constant, silicon-containing polymer film composition.

公开(公告)号：US06495906B2

公开(公告)日：2002-12-17

申请号：US10078046

申请日：2002-02-07

申请人： Douglas M. Smith ,  Teresa Ramos ,  Kevin H. Roderick ,  Stephen Wallace ,  James Drage ,  Hui-Jung Wu ,  Neil Viernes ,  Lisa B. Brungardt

发明人： Douglas M. Smith ,  Teresa Ramos ,  Kevin H. Roderick ,  Stephen Wallace ,  James Drage ,  Hui-Jung Wu ,  Neil Viernes ,  Lisa B. Brungardt

IPC分类号： H01L2358

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/3125 ,  H01L21/31695 ,  Y10T428/31663

摘要： The present invention relates to low dielectric constant nanoporous silica films and to processes for their manufacture. A substrate, e.g., a wafer suitable for the production of an integrated circuit, having a plurality of raised lines and/or electronic elements present on its surface, is provided with a relatively high porosity, low dielectric constant, silicon-containing polymer film composition.

摘要翻译： 本发明涉及低介电常数纳米多孔二氧化硅薄膜及其制造方法。 具有适合于生产集成电路的晶片，其表面上存在多个凸起线和/或电子元件的衬底具有相对较高的孔隙率低介电常数的含硅聚合物膜组合物 。

公开(公告)号：US06208014B1

公开(公告)日：2001-03-27

申请号：US09235186

申请日：1999-01-22

申请人： Hui-Jung Wu ,  James S. Drage ,  Douglas M. Smith ,  Teresa Ramos ,  Stephen Wallace ,  Neil Viernes

发明人： Hui-Jung Wu ,  James S. Drage ,  Douglas M. Smith ,  Teresa Ramos ,  Stephen Wallace ,  Neil Viernes

IPC分类号： H01L2358

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/3125 ,  H01L21/31695 ,  Y10T428/31663

摘要： A process for treating silica dielectric film on a substrate, which includes reacting a suitable hydrophilic silica film with an effective amount of a multifunctional surface modification agent. The film is present on a substrate and optionally has a pore structure with hydrophilic pore surfaces, and the reaction is conducted for a period of time sufficient for said surface modification agent to penetrate said pore structure and produce a treated silica film having a dielectric constant of about 3 or less, wherein the surface modification agent is hydrophobic and suitable for silylating or capping silanol moieties on such hydrophilic surfaces. Dielectric films and integrated circuits including such films are also disclosed.

摘要翻译： 一种处理基板上的二氧化硅电介质膜的方法，其包括使合适的亲水二氧化硅膜与有效量的多官能表面改性剂反应。 薄膜存在于基材上，任选具有亲水孔表面的孔结构，反应进行足以使所述表面改性剂渗透所述孔结构的时间，并产生介电常数为 约3或更少，其中表面改性剂是疏水性的并且适合于在这些亲水性表面上甲硅烷基化或封端硅烷醇部分。 还公开了包括这种膜的介电膜和集成电路。

公开(公告)号：US06518205B1

公开(公告)日：2003-02-11

申请号：US09714010

申请日：2000-11-16

申请人： Hui-Jung Wu ,  James S. Drage ,  Douglas M. Smith ,  Teresa Ramos ,  Stephen Wallace ,  Neil Viernes

发明人： Hui-Jung Wu ,  James S. Drage ,  Douglas M. Smith ,  Teresa Ramos ,  Stephen Wallace ,  Neil Viernes

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/3125 ,  H01L21/31695 ,  Y10T428/31663

摘要： A process for treating silica dielectric film on a substrate, which includes reacting a suitable hydrophilic silica film with an effective amount of a multifunctional surface modification agent. The film is present on a substrate and optionally has a pore structure with hydrophilic pore surfaces, and the reaction is conducted for a period of time sufficient for said surface modification agent to penetrate said pore structure and produce a treated silica film having a dielectric constant of about 3 or less, wherein the surface modification agent is hydrophobic and suitable for silylating or capping silanol moieties on such hydrophilic surfaces. Dielectric films and integrated circuits including such films are also disclosed.

摘要翻译： 一种处理基板上的二氧化硅电介质膜的方法，其包括使合适的亲水二氧化硅膜与有效量的多官能表面改性剂反应。 薄膜存在于基材上，任选具有亲水孔表面的孔结构，反应进行足以使所述表面改性剂渗透所述孔结构的时间，并产生介电常数为 约3或更少，其中表面改性剂是疏水性的并且适合于在这些亲水性表面上甲硅烷基化或封端硅烷醇部分。 还公开了包括这种膜的介电膜和集成电路。

公开(公告)号：US06455130B1

公开(公告)日：2002-09-24

申请号：US09706027

申请日：2000-11-03

申请人： Stephen Wallace ,  Douglas M. Smith ,  Teresa Ramos ,  Kevin H. Roderick ,  James S. Drage

发明人： Stephen Wallace ,  Douglas M. Smith ,  Teresa Ramos ,  Kevin H. Roderick ,  James S. Drage

IPC分类号： B32B328

CPC分类号： H01L21/31695 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  Y10T428/24537 ,  Y10T428/24595 ,  Y10T428/249978 ,  Y10T428/249979 ,  H01L2924/00

摘要： The present invention relates to nanoporous dielectric films and to a process for their manufacture. A substrate having a plurality of raised lines on its surface is provided with a relatively high porosity, low dielectric constant, silicon containing polymer composition positioned between the raised lines and a relatively low porosity, high dielectric constant, silicon containing composition positioned on the lines.

摘要翻译： 本发明涉及纳米多孔介电膜及其制造方法。 在其表面上具有多个凸起线的基底设置有相对较高的孔隙率，低介电常数，位于凸起线之间的含硅聚合物组合物和位于该线上的较低孔隙率，高介电常数的含硅组合物。

公开(公告)号：US06503850B1

公开(公告)日：2003-01-07

申请号：US09046473

申请日：1998-03-25

申请人： Stephen Wallace ,  Douglas M. Smith ,  Teresa Ramos ,  Kevin H. Roderick ,  James S. Drage ,  Lisa Beth Brungardt

发明人： Stephen Wallace ,  Douglas M. Smith ,  Teresa Ramos ,  Kevin H. Roderick ,  James S. Drage ,  Lisa Beth Brungardt

IPC分类号： H01L21469

CPC分类号： H01L21/02203 ,  B01J13/0091 ,  C01B33/1585 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/31695

摘要： The present invention relates to nanoporous dielectric films and to a process for their manufacture. Such films are useful in the production of integrated circuits. A precursor of an alkoxysilane, and low and high volatility solvents are mixed at a pH of about 2-5, raised to a pH of about 8 or above with a low volatility base and deposited on a semiconductor substrate. After exposure to atmospheric moisture, a nanoporous dielectric film is produced on the substrate.

摘要翻译： 本发明涉及纳米多孔介电膜及其制造方法。 这种膜可用于集成电路的生产。 将烷氧基硅烷的前体和低挥发性溶剂和低挥发性溶剂以约2-5的pH混合，以低挥发性碱升高至约8或更高的pH并沉积在半导体衬底上。 在暴露于大气湿度之后，在衬底上产生纳米多孔介电膜。

公开(公告)号：US6048804A

公开(公告)日：2000-04-11

申请号：US54262

申请日：1998-04-03

申请人： Douglas M. Smith ,  Teresa Ramos ,  Kevin H. Roderick ,  Stephen Wallace

发明人： Douglas M. Smith ,  Teresa Ramos ,  Kevin H. Roderick ,  Stephen Wallace

IPC分类号： C01B33/12 ,  C23C18/12 ,  H01L21/314 ,  H01L21/316 ,  H01L21/208

CPC分类号： H01L21/31695 ,  C23C18/1212 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343

摘要： A process for forming a nanoporous dielectric coating on a substrate. The process follows the steps of blending an alkoxysilane with a solvent composition and optional water; depositing the mixture onto a substrate while evaporating at least a portion of the solvent composition; placing the substrate in a sealed chamber and evacuating the chamber to a pressure below atmospheric pressure; exposing the substrate to water vapor at a pressure below atmospheric pressure and then exposing the substrate to base vapor.

摘要翻译： 一种在衬底上形成纳米多孔电介质涂层的方法。 该方法遵循将烷氧基硅烷与溶剂组合物和任选的水共混的步骤; 将混合物沉积在基材上同时蒸发至少一部分溶剂组合物; 将基板放置在密封室中并将室抽空至低于大气压的压力; 在低于大气压的压力下将基底暴露于水蒸汽，然后将基底暴露于基础蒸气。

公开(公告)号：US6126733A

公开(公告)日：2000-10-03

申请号：US111081

申请日：1998-07-07

申请人： Stephen Wallace ,  James Drage ,  Teresa Ramos ,  Douglas M. Smith

发明人： Stephen Wallace ,  James Drage ,  Teresa Ramos ,  Douglas M. Smith

IPC分类号： C01B33/12 ,  C07F7/04 ,  C08G77/06 ,  C08L83/04 ,  C09D5/25 ,  C09D183/04 ,  H01L21/316 ,  C09D103/00

CPC分类号： H01L21/02126 ,  C07F7/045 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/31695

摘要： The invention relates to nanoporous dielectric films and to a process for their manufacture. Such films are useful in the production of integrated circuits. Such films are produced from a precursor of an alkoxysilane; a relatively low volatility solvent composition comprising a e C.sub.1 to C.sub.4 alkylether of a C.sub.1 to C.sub.4 alkylene glycol which is miscible in water and alkoxysilanes, having a hydroxyl concentration of 0.0084 mole/cm.sup.3 or less, a boiling point of about 175.degree. C. or more at atmospheric pressure and a weight average molecular weight of about 120 or more; a relatively high volatility solvent composition having a boiling point below that of the relatively low volatility solvent composition; optional water and an optional catalytic amount of an acid.

摘要翻译： 本发明涉及纳米多孔介电膜及其制造方法。 这种膜可用于集成电路的生产。 这种膜由烷氧基硅烷的前体制成; 相对低挥发性的溶剂组合物，其包含C1-C4亚烷基二醇的C1-C4烷基醚，其可与水和烷氧基硅烷混溶，羟基浓度为0.0084摩尔/ cm3以下，沸点为约175℃以上 在大气压下，重均分子量为约120或更大; 挥发性相对较低的溶剂组合物，其沸点低于挥发性相对较低的溶剂组合物; 任选的水和任选的催化量的酸。

公开(公告)号：US6090448A

公开(公告)日：2000-07-18

申请号：US111082

申请日：1998-07-07

申请人： Stephen Wallace ,  James Drage ,  Teresa Ramos ,  Douglas M. Smith

发明人： Stephen Wallace ,  James Drage ,  Teresa Ramos ,  Douglas M. Smith

IPC分类号： C01B33/12 ,  C01B37/02 ,  C07F7/04 ,  C09D4/00 ,  H01L21/208 ,  H01L21/312 ,  H01L21/316 ,  B05D3/04

CPC分类号： H01L21/31695 ,  C01B37/02 ,  C07F7/045 ,  C09D4/00 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343

摘要： The invention relates to nanoporous dielectric films and to a process for their manufacture. Such films are useful in the production of integrated circuits. Such films are produced from a precursor of an alkoxysilane; a relatively low volatility solvent composition comprising an ether of a C.sub.1 to C.sub.4 alkylene glycol which is miscible in water and alkoxysilanes, having a hydroxyl concentration of 0.021 mole/cm.sup.3 or less, a boiling point of about 175 .degree. C. or more at atmospheric pressure and a weight average molecular weight of about 100 or more; a relatively high volatility solvent composition having a boiling point below that of the relatively low volatility solvent composition; optional water and an optional catalytic amount of an acid.

摘要翻译： 本发明涉及纳米多孔介电膜及其制造方法。 这种膜可用于集成电路的生产。 这种膜由烷氧基硅烷的前体制成; 一种相对低挥发性的溶剂组合物，其包含羟基浓度为0.021摩尔/厘米3或更低，在大气压下约175℃或更高的沸点的可与水混合的C1至C4亚烷基二醇醚和烷氧基硅烷 并且重均分子量为约100或更大; 挥发性相对较低的溶剂组合物，其沸点低于相对低挥发性溶剂组合物的沸点; 任选的水和任选的催化量的酸。

公开(公告)号：US06410149B1

公开(公告)日：2002-06-25

申请号：US09378705

申请日：1999-08-23

申请人： Neil Hendricks ,  Douglas M. Smith ,  Teresa Ramos ,  Stephen Wallace ,  James Drage

发明人： Neil Hendricks ,  Douglas M. Smith ,  Teresa Ramos ,  Stephen Wallace ,  James Drage

IPC分类号： B23B904

CPC分类号： B82Y10/00 ,  B82Y30/00 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/02362 ,  H01L21/31695 ,  Y10T428/31663

摘要： Improved processes for forming hydrophobic nanoporous dielectric coatings on substrates are provided. The improved processes involve forming a reaction mixture that combines at least one mono-, di- or trifunctional precursor with at least one tetrafunctional precursor, recovering the reaction product, and then depositing the reaction product onto a suitable substrate, followed by gelling of the deposited film. Precursors include alkoxy, acetoxy and halogen leaving groups. Optional processes to enhance the hydrophobicity of a nanoporous silica film are also provided, as well as improved nanoporous silica films, coated substrates and integrated circuits prepared by the new processes

摘要翻译： 提供了在衬底上形成疏水纳米多孔介电涂层的改进方法。 改进的方法包括形成将至少一种单官能，二官能或三官能前体与至少一种四官能前体结合的反应混合物，回收反应产物，然后将反应产物沉积到合适的底物上，然后凝胶化沉积的 电影。 前体包括烷氧基，乙酰氧基和卤素离去基团。 还提供了增强纳米多孔二氧化硅膜的疏水性的可选工艺，以及改进的纳米多孔二氧化硅膜，涂覆的基底和通过新工艺制备的集成电路