公开(公告)号：US20150267302A1

公开(公告)日：2015-09-24

申请号：US14658616

申请日：2015-03-16

Applicant: Ebara Corporation

Inventor： Makoto Kubota ,  Akira Susaki ,  Masashi Shimoyama ,  Tsutomu Nakada

IPC: C23C22/73

CPC classification number: C23C18/1834 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1664 ,  C23C18/1675 ,  C23C18/1676

Abstract: An electroless plating method which can prevent stoppage of a plating reaction and a decrease in a plating rate is disclosed. This method includes: circulating a plating solution through a plating bath while heating the plating solution; immersing the substrate in the plating solution in the plating bath; forming a first electroless plating film on the substrate while circulating the plating solution at a first flow rate during a period from when the substrate is immersed in the plating solution until a predetermined time elapses; and forming a second electroless plating film on the first electroless plating film while circulating the plating solution at a second flow rate that is lower than the first flow rate after the predetermined time has elapsed.

Abstract translation: 公开了一种能够防止电镀反应停止和电镀速度降低的无电镀方法。 该方法包括：在加热电镀溶液的同时使镀液循环通过电镀液; 将基板浸渍在电镀液中的电镀液中; 在从基板浸入电镀液中经过预定时间的期间以第一流量使电镀液循环，在基板上形成第一无电镀膜; 在第一化学镀膜上形成第二无电镀膜，同时在经过规定时间后以比第一流量低的第二流量使电镀液循环。

公开(公告)号：US09633898B2

公开(公告)日：2017-04-25

申请号：US14920104

申请日：2015-10-22

Applicant: EBARA CORPORATION

Inventor： Akira Susaki ,  Keiichi Kurashina

IPC: H01L21/768 ,  C23F1/18 ,  C09K13/00 ,  C09G1/02 ,  C09G1/04 ,  C09K13/06 ,  H01L21/306 ,  H01L21/3213 ,  H05K3/06 ,  C23F1/10 ,  C23F1/14 ,  C23F1/16 ,  C23F1/44 ,  C09K13/02 ,  H01L23/00

CPC classification number: H01L21/76883 ,  C09G1/02 ,  C09G1/04 ,  C09K13/00 ,  C09K13/02 ,  C09K13/06 ,  C23F1/10 ,  C23F1/14 ,  C23F1/16 ,  C23F1/18 ,  C23F1/44 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/76802 ,  H01L21/76879 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13157 ,  H05K3/067 ,  H01L2924/00014 ,  H01L2924/01029

Abstract: An etching liquid which can selectively remove only a copper layer in an etching process of a multilayer structure including a cobalt layer and the copper layer is disclosed. The etching liquid is an etching liquid for etching the copper layer in the multilayer structure including the copper layer and the cobalt layer. This etching liquid includes at least one acid selected from a group consisting of citric acid, oxalic acid, malic acid, and malonic acid, and hydrogen peroxide, the etching liquid having pH in a range of 4.3 to 5.5.