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公开(公告)号:US10138117B2
公开(公告)日:2018-11-27
申请号:US14908888
申请日:2014-07-31
申请人: Entegris, Inc.
发明人: Li-Min Chen , Steven Lippy , Daniela White , Emanuel I. Cooper
IPC分类号: B81C1/00 , C09K13/08 , G03F7/40 , H01L21/3213 , C09K13/10 , H01L21/02 , H01L21/311
摘要: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions are low pH and contain at least one oxidizing agent and at least one etchant as well as corrosion inhibitors to minimize metal erosion and passivating agents to protect dielectric materials.
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公开(公告)号:US09765288B2
公开(公告)日:2017-09-19
申请号:US14648815
申请日:2013-12-04
发明人: Emanuel I. Cooper , Hsing-Chen Wu , Min-Chieh Yang , Sheng-Hung Tu , Li-Min Chen
CPC分类号: C11D7/04 , C11D3/0073 , C11D7/08 , C11D7/26 , C11D7/265 , C11D7/3209 , C11D7/3281 , C11D11/0047
摘要: Liquid compositions useful for the cleaning of residue and contaminants from a III-V microelectronic device material, such as InGaAs, without substantially removing the III-V material. The liquid compositions are improvements of the SC1 and SC2 formulations.
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公开(公告)号:US10472567B2
公开(公告)日:2019-11-12
申请号:US14772652
申请日:2014-03-04
申请人: Entegris, Inc.
发明人: Li-Min Chen , Emanuel I. Cooper , Steven Lippy , Lingyan Song , Chia-Jung Hsu , Sheng-Hung Tu , Chieh Ju Wang
摘要: Semi-aqueous compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device having same thereon. The semi-aqueous compositions contain at least one oxidant, at least one etchant, and at least one organic solvent, may contain various corrosion inhibitors to ensure selectivity.
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公开(公告)号:US10428271B2
公开(公告)日:2019-10-01
申请号:US14914418
申请日:2014-08-28
申请人: Entegris, Inc.
发明人: Emanuel I. Cooper , Li-Min Chen , Steven Lippy , Chia-Jung Hsu , Sheng-hung Tu , Chieh Ju Wang
IPC分类号: C09K13/00 , C09K13/06 , H01L21/311 , H01L21/3213
摘要: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant, one etchant, and one activator to enhance the etch rate of titanium nitride.
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公开(公告)号:US10392560B2
公开(公告)日:2019-08-27
申请号:US15407850
申请日:2017-01-17
申请人: ENTEGRIS, INC.
发明人: Jeffrey A. Barnes , Emanuel I. Cooper , Li-Min Chen , Steven Lippy , Rekha Rajaram , Sheng-Hung Tu
IPC分类号: C09K13/10 , H01L21/3213 , C09K13/00 , C09K13/06 , C09K13/08 , C23F1/02 , C23F1/30 , C23F1/40 , H01L21/02 , C11D11/00 , C11D7/02 , C11D7/08 , C11D7/32 , H01L21/311
摘要: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.
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