公开(公告)号：US10340150B2

公开(公告)日：2019-07-02

申请号：US15103593

申请日：2014-12-16

Applicant: Entegris, Inc. ,  ATMI TAIWAN CO., LTD.

Inventor： Steven Bilodeau ,  Jeffrey A. Barnes ,  Emanuel Cooper ,  Hsing-Chen Wu ,  Sheng-Hung Tu ,  Thomas Parson ,  Min-chieh Yang

IPC: H01L21/3213 ,  C09K13/00 ,  H01L21/3205 ,  H01L29/16 ,  H01L29/26 ,  H01L29/45 ,  C09G1/04 ,  H01L21/24

Abstract: Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.

公开(公告)号：US09765288B2

公开(公告)日：2017-09-19

申请号：US14648815

申请日：2013-12-04

Applicant: ENTEGRIS, INC. ,  ATMI TAIWAN CO., LTD

Inventor： Emanuel I. Cooper ,  Hsing-Chen Wu ,  Min-Chieh Yang ,  Sheng-Hung Tu ,  Li-Min Chen

IPC: C11D7/04 ,  C11D7/26 ,  C11D7/32 ,  C11D3/00 ,  C11D7/08 ,  C11D11/00

CPC classification number: C11D7/04 ,  C11D3/0073 ,  C11D7/08 ,  C11D7/26 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3281 ,  C11D11/0047

Abstract: Liquid compositions useful for the cleaning of residue and contaminants from a III-V microelectronic device material, such as InGaAs, without substantially removing the III-V material. The liquid compositions are improvements of the SC1 and SC2 formulations.

公开(公告)号：US10790187B2

公开(公告)日：2020-09-29

申请号：US15873531

申请日：2018-01-17

Applicant: Entegris, Inc.

Inventor： Emanuel I. Cooper ,  Makonnen Payne ,  WonLae Kim ,  Eric Hong ,  Sheng-Hung Tu ,  Chieh Ju Wang ,  Chia-Jung Hsu

IPC: C11D7/50 ,  H01L21/768 ,  B08B7/00 ,  H01L21/02 ,  C11D3/395 ,  C23G1/20 ,  C11D7/32 ,  C11D7/36 ,  C11D3/00 ,  C11D3/39 ,  C09K13/00 ,  G03F7/42 ,  C11D7/26 ,  C11D7/08 ,  C23G1/18 ,  C11D11/00 ,  C23G1/26 ,  H01L21/311

Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.

公开(公告)号：US10651045B2

公开(公告)日：2020-05-12

申请号：US16122940

申请日：2018-09-06

Applicant: Entegris, Inc.

Inventor： Emanuel Cooper ,  Steven Bilodeau ,  Wen-Haw Dai ,  Min-Chieh Yang ,  Sheng-Hung Tu ,  Hsing-Chen Wu ,  Sean Kim ,  SeongJin Hong

IPC: H01L21/311 ,  C09K13/08 ,  H01L21/02 ,  H01L21/67 ,  H01L21/306 ,  C30B33/10

Abstract: Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching.

公开(公告)号：US10472567B2

公开(公告)日：2019-11-12

申请号：US14772652

申请日：2014-03-04

Applicant: Entegris, Inc.

Inventor： Li-Min Chen ,  Emanuel I. Cooper ,  Steven Lippy ,  Lingyan Song ,  Chia-Jung Hsu ,  Sheng-Hung Tu ,  Chieh Ju Wang

IPC: C09K13/00 ,  H01L21/3213 ,  C23F1/14 ,  C23F1/26 ,  C23G1/02 ,  C09K13/08 ,  C09K13/10 ,  G03F7/42

Abstract: Semi-aqueous compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device having same thereon. The semi-aqueous compositions contain at least one oxidant, at least one etchant, and at least one organic solvent, may contain various corrosion inhibitors to ensure selectivity.

公开(公告)号：US10392560B2

公开(公告)日：2019-08-27

申请号：US15407850

申请日：2017-01-17

Applicant: ENTEGRIS, INC.

Inventor： Jeffrey A. Barnes ,  Emanuel I. Cooper ,  Li-Min Chen ,  Steven Lippy ,  Rekha Rajaram ,  Sheng-Hung Tu

IPC: C09K13/10 ,  H01L21/3213 ,  C09K13/00 ,  C09K13/06 ,  C09K13/08 ,  C23F1/02 ,  C23F1/30 ,  C23F1/40 ,  H01L21/02 ,  C11D11/00 ,  C11D7/02 ,  C11D7/08 ,  C11D7/32 ,  H01L21/311

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.

公开(公告)号：US20190074188A1

公开(公告)日：2019-03-07

申请号：US16122940

申请日：2018-09-06

Applicant: Entegris, Inc.

Inventor： Emanuel Cooper ,  Steven Bilodeau ,  Wen-Haw Dai ,  Min-Chieh Yang ,  Sheng-Hung Tu ,  Hsing-Chen Wu ,  Sean Kim ,  SeongJin Hong

IPC: H01L21/311 ,  C09K13/08

Abstract: Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching.

公开(公告)号：US20180204764A1

公开(公告)日：2018-07-19

申请号：US15873531

申请日：2018-01-17

Applicant: Entegris, Inc.

Inventor： Emanuel I. Cooper ,  Makonnen Payne ,  WonLae Kim ,  Eric Hong ,  Sheng-Hung Tu ,  Chieh Ju Wang ,  Chia-Jung Hsu

IPC: H01L21/768 ,  H01L21/02 ,  B08B7/00

Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.