公开(公告)号：US11560625B2

公开(公告)日：2023-01-24

申请号：US16245791

申请日：2019-01-11

Applicant: ENTEGRIS, INC.

Inventor： Robert Wright, Jr. ,  Shuang Meng ,  Bryan C. Hendrix ,  Thomas H. Baum ,  Philip S. H. Chen

IPC: C23C16/455 ,  C23C16/32 ,  C23C16/08

Abstract: Described are vapor deposition methods for depositing molybdenum materials onto a substrate by the use of bis(alkyl-arene) molybdenum, also referred to herein as (alkyl-arene)2Mo, for example bis(ethyl-benzene) molybdenum ((EtBz)2Mo), as a precursor for such deposition, as well as structures that contain the deposited material.

公开(公告)号：US11107675B2

公开(公告)日：2021-08-31

申请号：US15963656

申请日：2018-04-26

Applicant: Entegris, Inc.

Inventor： Thomas H. Baum ,  Philip S. H. Chen ,  Robert L. Wright ,  Bryan Hendrix ,  Shuang Meng ,  Richard Assion

IPC: H01L21/02 ,  C23C16/06 ,  C23C16/455 ,  H01L21/768 ,  H01L21/285 ,  C23C16/02 ,  C23C16/04 ,  H01L23/532

Abstract: A method of forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum oxytetrachloride (MoOCl4) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. In various implementations, a diborane contact of the substrate may be employed to establish favorable nucleation conditions for the subsequent bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD.

公开(公告)号：US10453744B2

公开(公告)日：2019-10-22

申请号：US15958568

申请日：2018-04-20

Applicant: Entegris, Inc.

Inventor： Shuang Meng ,  Richard Ulrich Assion ,  Thomas H. Baum ,  Bryan Clark Hendrix

IPC: H01L21/768 ,  C23C16/40 ,  C23C16/02 ,  H01L21/285 ,  C23C16/455 ,  H01L21/3205 ,  C23C16/14 ,  C23C16/28 ,  H01L21/28

Abstract: The disclosure relates to a method of making molybdenum films utilizing boron and molybdenum nucleation layers. The resulting molybdenum films have low electrical resistivity, are substantially free of boron, and can be made at reduced temperatures compared to conventional chemical vapor deposition processes that do not use the boron or molybdenum nucleation layers. The molybdenum nucleation layer formed by this process can protect the substrate from the etching effect of MoCl5 or MoOCl4, facilitates nucleation of subsequent CVD Mo growth on top of the molybdenum nucleation layer, and enables Mo CVD deposition at lower temperatures. The nucleation layer can also be used to control the grain sizes of the subsequent CVD Mo growth, and therefore controls the electrical resistivity of the Mo film.

公开(公告)号：US20180286668A1

公开(公告)日：2018-10-04

申请号：US15963656

申请日：2018-04-26

Applicant: Entegris, Inc.

Inventor： Thomas H. Baum ,  Philip S.H. Chen ,  Robert L. Wright ,  Bryan Hendrix ,  Shuang Meng ,  Richard Assion

IPC: H01L21/02

Abstract: A method of forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum oxytetrachloride (MoOCl4) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. In various implementations, a diborane contact of the substrate may be employed to establish favorable nucleation conditions for the subsequent bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD.

公开(公告)号：US20180261503A1

公开(公告)日：2018-09-13

申请号：US15958568

申请日：2018-04-20

Applicant: Entegris, Inc.

Inventor： Shuang Meng ,  Richard Ulrich Assion ,  Thomas H. Baum ,  Bryan Clark Hendrix

IPC: H01L21/768 ,  C23C16/455 ,  C23C16/02 ,  C23C16/40

CPC classification number: H01L21/76876 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/28 ,  C23C16/405 ,  C23C16/45527 ,  H01L21/28061 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/32051 ,  H01L21/76853 ,  H01L2221/1089

Abstract: The disclosure relates to a method of making molybdenum films utilizing boron and molybdenum nucleation layers. The resulting molybdenum films have low electrical resistivity, are substantially free of boron, and can be made at reduced temperatures compared to conventional chemical vapor deposition processes that do not use the boron or molybdenum nucleation layers. The molybdenum nucleation layer formed by this process can protect the substrate from the etching effect of MoCl5 or MoOCl4, facilitates nucleation of subsequent CVD Mo growth on top of the molybdenum nucleation layer, and enables Mo CVD deposition at lower temperatures. The nucleation layer can also be used to control the grain sizes of the subsequent CVD Mo growth, and therefore controls the electrical resistivity of the Mo film.

公开(公告)号：US20180142345A1

公开(公告)日：2018-05-24

申请号：US15820640

申请日：2017-11-22

Applicant: Entegris, Inc.

Inventor： Shuang Meng ,  Richard Ulrich Assion ,  Thomas H. Baum ,  Bryan Clark Hendrix

IPC: C23C16/06 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532

CPC classification number: C23C16/06 ,  C23C16/0272 ,  C23C16/0281 ,  C23C16/08 ,  H01L21/28061 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/32051 ,  H01L21/76871 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53257 ,  H01L2221/1089

Abstract: The disclosure relates to a method of making molybdenum films utilizing boron and molybdenum nucleation layers. The resulting molybdenum films have low electrical resistivity, are substantially free of boron, and can be made at reduced temperatures compared to conventional chemical vapor deposition processes that do not use the boron or molybdenum nucleation layers. The molybdenum nucleation layer formed by this process can protect the substrate from the etching effect of MoCl5 or MoOCl4, facilitates nucleation of subsequent CVD Mo growth on top of the molybdenum nucleation layer, and enables Mo CVD deposition at lower temperatures. The nucleation layer can also be used to control the grain sizes of the subsequent CVD Mo growth, and therefore controls the electrical resistivity of the Mo film.

公开(公告)号：US20180019165A1

公开(公告)日：2018-01-18

申请号：US15649248

申请日：2017-07-13

Applicant: Entegris, Inc.

Inventor： Thomas H. Baum ,  Philip S.H. Chen ,  Robert Wright ,  Bryan Hendrix ,  Shuang Meng ,  Richard Assion

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/06

CPC classification number: H01L21/76876 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/06 ,  C23C16/14 ,  C23C16/45553 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/32051 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76877 ,  H01L2221/1089

Abstract: A method of forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum oxytetrachloride (MoOCl4) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. In various implementations, a diborane contact of the substrate may be employed to establish favorable nucleation conditions for the subsequent bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD.