METHOD FOR COATING CAVITIES OF SEMICONDUCTOR SUBSTRATES
    2.
    发明申请
    METHOD FOR COATING CAVITIES OF SEMICONDUCTOR SUBSTRATES 有权
    用于涂覆半导体衬底的方法

    公开(公告)号:US20160365241A1

    公开(公告)日:2016-12-15

    申请号:US15118914

    申请日:2015-01-09

    发明人: Andreas FEHKUHRER

    摘要: A method for temporary coating of cavities, which at least partially run through a semiconductor substrate and are provided for a permanent coating and/or equipping, with a temporarily applied coating material before processing steps for processing at least one surface of the semiconductor substrate. In addition, a method for removing a temporary coating of cavities of a semiconductor substrate, whereby the coating is applied according to a previously-mentioned method and whereby, in particular immediately afterwards, a permanent coating and/or equipping of the cavities is carried out.

    摘要翻译: 一种用于在处理用于处理半导体衬底的至少一个表面的步骤的处理步骤之前,至少部分地穿过半导体衬底并提供用于永久涂覆和/或装备临时涂覆的涂层材料的空腔的方法。 此外,一种用于去除半导体衬底的空腔的临时涂层的方法,由此根据前述方法施加涂层,并且由此特别是紧接着之后进行空腔的永久性涂布和/或装备 。