ABRASIVE FILM FABRICATION METHOD AND ABRASIVE FILM
    1.
    发明申请
    ABRASIVE FILM FABRICATION METHOD AND ABRASIVE FILM 审中-公开
    磨料薄膜生产方法和磨料薄膜

    公开(公告)号:US20160318155A1

    公开(公告)日:2016-11-03

    申请号:US15163064

    申请日:2016-05-24

    申请人: EBARA CORPORATION

    IPC分类号: B24D11/00 B05D5/02

    摘要: A method for fabricating an abrasive firm includes preparing a base film, coating the base film with a first paint which contains no abrasive grain but contains a binder resin, and drying the paint to form a first layer. The method further includes coating the first layer with a second paint which contains the abrasive grains and the binder resin, and drying the paint to form a second layer. The method further includes heating the first layer and the second layer for imidization.

    摘要翻译: 制造磨料制品的方法包括制备基膜,用不含磨粒但含有粘合剂树脂的第一涂料涂覆基膜,并干燥涂料以形成第一层。 该方法还包括用含有磨料颗粒和粘合剂树脂的第二种涂料涂覆第一层,并干燥涂料以形成第二层。 该方法还包括加热第一层和第二层以进行酰亚胺化。

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20190390335A1

    公开(公告)日:2019-12-26

    申请号:US16559251

    申请日:2019-09-03

    申请人: Ebara Corporation

    摘要: There is disclosed a substrate processing apparatus which can align a center of a substrate, such as a wafer, with a central axis of a substrate stage with high accuracy. The substrate processing apparatus includes: an eccentricity detector configured to obtain an amount of eccentricity and an eccentricity direction of a center of the substrate, when held on a centering stage, from a central axis of the centering stage; and an aligner configured to perform a centering operation of moving and rotating the centering stage until the center of the substrate on the centering stage is located on a central axis of a processing stage. The aligner is configured to calculate a distance by which the centering stage is to be moved and an angle through which the centering stage is to be rotated, based on an initial relative position of the central axis of the centering stage with respect to the central axis of the processing stage, the amount of eccentricity, and the eccentricity direction.

    CHEMICAL MECHANICAL POLISHING APPARATUS FOR POLISHING WORKPIECE

    公开(公告)号:US20190262968A1

    公开(公告)日:2019-08-29

    申请号:US16412562

    申请日:2019-05-15

    摘要: The present invention relates to a chemical mechanical polishing (CMP) apparatus for polishing a workpiece, such as a metal body, to a mirror finish. The chemical mechanical polishing apparatus includes: a polishing pad (2) having an annular polishing surface (2a) which has a curved vertical cross-section; a workpiece holder (11) for holding a workpiece (W) having a polygonal shape; a rotating device (15) configured to rotate the workpiece holder (11) about an axis of the workpiece (W); a pressing device (14) configured to press a periphery of the workpiece (W) against the annular polishing surface (2a); and an operation controller (25) configured to change a speed at which the rotating device (15) rotates the workpiece (W) according to a rotation angle of the workpiece (W). The pressing device (14) is disposed more inwardly than the workpiece holder (11) in a radial direction of the polishing table (3).

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
    8.
    发明申请
    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
    基板处理装置和基板处理方法

    公开(公告)号:US20160305022A1

    公开(公告)日:2016-10-20

    申请号:US15095330

    申请日:2016-04-11

    申请人: Ebara Corporation

    IPC分类号: C23C16/458 C23C16/52

    摘要: There is disclosed a substrate processing apparatus which can align a center of a substrate, such as a wafer, with a central axis of a substrate stage with high accuracy. The substrate processing apparatus includes: an eccentricity detector configured to obtain an amount of eccentricity and an eccentricity direction of a center of the substrate, when held on a centering stage, from a central axis of the centering stage; and an aligner configured to perform a centering operation of moving and rotating the centering stage until the center of the substrate on the centering stage is located on a central axis of a processing stage. The aligner is configured to calculate a distance by which the centering stage is to be moved and an angle through which the centering stage is to be rotated, based on an initial relative position of the central axis of the centering stage with respect to the central axis of the processing stage, the amount of eccentricity, and the eccentricity direction.

    摘要翻译: 公开了一种基板处理装置,其能够高精度地将基板(例如晶片)的中心与基板台的中心轴对准。 基板处理装置包括:偏心检测器,被配置为当从定心台的中心轴保持在定心台上时获得基板的中心的偏心量和偏心方向; 以及对准器,其被配置为执行移动和旋转定心台的定心操作,直到定心台上的基板的中心位于处理台的中心轴线上。 对准器被配置为基于定心台的中心轴线相对于中心轴线的初始相对位置来计算定心台架将被移动的距离和定心台架将要旋转的角度 的加工阶段,偏心量和偏心方向。

    METHOD AND APPARATUS FOR POLISHING A SUBSTRATE, AND METHOD FOR PROCESSING A SUBSTRATE

    公开(公告)号:US20190054594A1

    公开(公告)日:2019-02-21

    申请号:US16003779

    申请日:2018-06-08

    申请人: Ebara Corporation

    IPC分类号: B24B55/12

    摘要: A method and an apparatus which can efficiently polish an entirety of a back surface, including an outermost area thereof, of a substrate while the back surface of the substrate faces downward are disclosed. The method includes rotating a substrate by rotating a plurality of rollers about their respective own axes while the rollers contact a periphery of the substrate with a back surface of the substrate facing downward; and polishing an entirety of the back surface of the substrate by moving a polishing tool relative to the substrate while supplying a liquid onto the back surface of the substrate and while placing the polishing tool in contact with the back surface of the substrate, the polishing tool being located at a lower side of the substrate.