摘要:
A polymer includes a first type of repeat unit represented by Formula I: where X is selected from —CH2—, —CH2—CH2—, or —O—; m is an integer from 0 to about 5; and where for the first type of repeat unit one of R1, R2, R3, and R4 is one of a maleimide containing group and for the second type of repeat unit one of R1, R2, R3, and R4 is a hindered aromatic group, a C8 or greater alkyl group, a C4 or greater halohydrocarbyl or perhalocarbyl group, a C7 or greater aralkyl group, or a heteroatom hydrocarbyl or halohydrocarbyl group.
摘要:
A polymer includes a first type of repeat unit represented by Formula I: where X is selected from —CH2—, —CH2—CH2—, or —O—; m is an integer from 0 to about 5; and where for the first type of repeat unit one of R1, R2, R3, and R4 is one of a maleimide containing group and for the second type of repeat unit one of R1, R2, R3, and R4 is a hindered aromatic group, a C8 or greater alkyl group, a C4 or greater halohydrocarbyl or perhalocarbyl group, a C7 or greater aralkyl group, or a heteroatom hydrocarbyl or halohydrocarbyl group.
摘要:
Some embodiments in accordance with the present invention relate to norbornene-type polymers and to photosensitive dielectric resin compositions formed therefrom. Other embodiments relate to films formed from such compositions and to devices, such as electrical, electronic and optoelectronic devices, that encompass such films.
摘要:
Some embodiments in accordance with the present invention relate to norbornene-type polymers and to photosensitive dielectric resin compositions formed therefrom. Other embodiments relate to films formed from such compositions and to devices, such as electrical, electronic and optoelectronic devices, that encompass such films.
摘要:
Some embodiments in accordance with the present invention relate to norbornene-type polymers and to photosensitive dielectric resin compositions formed therefrom. Other embodiments relate to films formed from such compositions and to devices, such as electrical, electronic and optoelectronic devices, that encompass such films.
摘要:
Some embodiments in accordance with the present invention relate to norbornene-type polymers and to photosensitive dielectric resin compositions formed therefrom. Other embodiments relate to films formed from such compositions and to devices, such as electrical, electronic and optoelectronic devices, that encompass such films.
摘要:
Polymeric compositions for semiconductor applications comprising 10 to 99 wt. % of norbornene-type cycloolefin monomers represented by one or more of Formula I(a), I(b), and optionally I(c) and/or I(d), 0.0005 to 0.5 wt. % of an addition polymerization procatalyst, and optionally: up to 0.5 wt. % of a cocatalyst, up to 59 wt. % of a crosslinking monomer, up to 50 wt. % of a viscosifier, up to 20 wt. % of a thixotropic additive(s), up to 80 wt. % of a filler, up to 10 wt. % of an antioxidant, and up to 0.6 wt. % of an antioxidant synergist, the total of the components of the formulation adding up to 100%. Such formulations are mass polymerized, or cured, to form polymeric compositions that have properties desirable for a variety of specific electronic, microelectronic, optoelectronic and micro-optoelectronic applications such as die attach adhesives, underfill materials, prepreg binders, encapsulants, protective layers, and other related applications.
摘要:
Embodiments in accordance with the present invention encompass negative-tone, aqueous base developable, self-imageable polymer compositions useful for forming films that can be patterned to create structures for microelectronic devices, microelectronic packaging, microelectromechanical systems, optoelectronic devices and displays.
摘要:
Embodiments in accordance with the present invention encompass negative-tone, aqueous base developable, self-imageable polymer compositions useful for forming films that can be patterned to create structures for microelectronic devices, microelectronic packaging, microelectromechanical systems, optoelectronic devices and displays.
摘要:
Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as gate insulator layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin gate insulator and processes for preparing such polycycloolefin gate insulator layers and electronic devices encompassing such layers.