公开(公告)号：US20070138505A1

公开(公告)日：2007-06-21

申请号：US11606624

申请日：2006-11-30

申请人： Edward Preble ,  Lianghong Liu ,  Andrew Hanser ,  N. Williams ,  Xueping Xu

发明人： Edward Preble ,  Lianghong Liu ,  Andrew Hanser ,  N. Williams ,  Xueping Xu

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L21/02694 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0257 ,  H01L21/02581 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/0688 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/30 ,  H01L33/32

摘要： In a method for making a low-defect single-crystal GaN film, an epitaxial nitride layer is deposited on a substrate. A first GaN layer is grown on the epitaxial nitride layer by HVPE under a growth condition that promotes the formation of pits, wherein after growing the first GaN layer the GaN film surface morphology is rough and pitted. A second GaN layer is grown on the first GaN layer to form a GaN film on the substrate. The second GaN layer is grown by HVPE under a growth condition that promotes filling of the pits, and after growing the second GaN layer the GaN film surface morphology is essentially pit-free. A GaN film having a characteristic dimension of about 2 inches or greater, and a thickness normal ranging from approximately 10 to approximately 250 microns, includes a pit-free surface, the threading dislocation density being less than 1×108 cm−2.

摘要翻译： 在制造低缺陷单晶GaN膜的方法中，在衬底上沉积外延氮化物层。 在促进凹坑形成的生长条件下，通过HVPE在外延氮化物层上生长第一GaN层，其中在生长第一GaN层之后，GaN膜表面形貌粗糙和凹陷。 在第一GaN层上生长第二GaN层，以在衬底上形成GaN膜。 第二GaN层通过HVPE在促进凹坑填充的生长条件下生长，并且在生长第二GaN层之后，GaN膜表面形态基本上是无凹坑的。 具有约2英寸或更大的特征尺寸和约10至约250微米的厚度法线的GaN膜包括无凹坑表面，穿透位错密度小于1×10 8 cm -2。

公开(公告)号：US20070141823A1

公开(公告)日：2007-06-21

申请号：US11606633

申请日：2006-11-30

申请人： Edward Preble ,  Denis Tsvetkov ,  Andrew Hanser ,  N. Williams ,  Xueping Xu

发明人： Edward Preble ,  Denis Tsvetkov ,  Andrew Hanser ,  N. Williams ,  Xueping Xu

IPC分类号： H01L21/28

CPC分类号： H01L21/02694 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0257 ,  H01L21/02581 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/0688 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/30 ,  H01L33/32

摘要： In a method for making an inclusion-free uniformly semi-insulating GaN crystal, an epitaxial nitride layer is deposited on a substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode, wherein a surface of the nucleation layer is substantially covered with pits and the aspect ratio of the pits is essentially the same. A GaN transitional layer is grown on the nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. After growing the transitional layer, a surface of the transitional layer is substantially pit-free. A bulk GaN layer is grown on the transitional layer by HVPE. After growing the bulk layer, a surface of the bulk layer is smooth and substantially pit-free. The GaN is doped with a transition metal during at least one of the foregoing GaN growth steps.

摘要翻译： 在制造无夹杂物的均匀半绝缘GaN晶体的方法中，在衬底上沉积外延氮化物层。 3D成核GaN层通过HVPE在基本上3D生长模式下在外延氮化物层上生长，其中成核层的表面基本上被凹坑覆盖，并且凹坑的纵横比基本相同。 在将生长模式从基本上3D生长模式改变为基本上2D生长模式的条件下，通过HVPE在成核层上生长GaN过渡层。 在生长过渡层之后，过渡层的表面基本上是无凹坑的。 通过HVPE在过渡层上生长体GaN层。 在生长本体层之后，本体层的表面是光滑的并且基本上无凹坑。 在至少一个上述GaN生长步骤期间，GaN掺杂有过渡金属。