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1.发明授权High frequency flip chip package process of polymer substrate and structure thereof 有权聚合物基板的高频倒装芯片封装工艺及其结构公开(公告)号：US08033039B2
公开(公告)日：2011-10-11
申请号：US12547575
申请日：2009-08-26
申请人： Edward-yi Chang , Li-Han Hsu , Chee-Way Oh , Wei-Cheng Wu , Chin-te Wang
发明人： Edward-yi Chang , Li-Han Hsu , Chee-Way Oh , Wei-Cheng Wu , Chin-te Wang
CPC分类号： H01L23/66 , H01L21/563 , H01L23/49816 , H01L24/16 , H01L24/81 , H01L2223/6627 , H01L2224/16 , H01L2224/73204 , H01L2224/81192 , H01L2224/81203 , H01L2224/81444 , H01L2224/81895 , H01L2224/82203 , H01L2224/83102 , H01L2224/83104 , H01L2924/00011 , H01L2924/00014 , H01L2924/01019 , H01L2924/01079 , H01L2924/15311 , H01L2924/19033 , H01L2224/0401
摘要： In a high frequency flip chip package process of a polymer substrate and a structure thereof, the structure is a one-layer structure packaged by a high frequency flip chip package process to overcome the shortcomings of a conventional two-layer structure packaged by the high frequency flip chip package process. The conventional structure not only incurs additional insertion loss and return loss in its high frequency characteristic, but also brings out a reliability issue. Thus, the manufacturing process of a ceramic substrate in the conventional structure still has the disadvantages of a poor yield rate and a high cost.
摘要翻译： 在聚合物基板的高频倒装芯片封装工艺及其结构中，该结构是通过高频倒装芯片封装工艺封装的单层结构，以克服由高频率封装的常规双层结构的缺点 倒装芯片封装过程。 常规结构不仅在其高频特性中引起额外的插入损耗和回波损耗，而且带来可靠性问题。 因此，传统结构中的陶瓷基板的制造工序仍然具有成品率低，成本高的缺点。
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公开(公告)号：US20110186974A1
公开(公告)日：2011-08-04
申请号：US13085602
申请日：2011-04-13
申请人： Edward-yi Chang , Li-Han Hsu , Chee-Way Oh , Wei-Cheng Wu , Chin-te Wang
发明人： Edward-yi Chang , Li-Han Hsu , Chee-Way Oh , Wei-Cheng Wu , Chin-te Wang
IPC分类号： H01L23/50
CPC分类号： H01L23/66 , H01L21/563 , H01L23/49816 , H01L24/16 , H01L24/81 , H01L2223/6627 , H01L2224/16 , H01L2224/73204 , H01L2224/81192 , H01L2224/81203 , H01L2224/81444 , H01L2224/81895 , H01L2224/82203 , H01L2224/83102 , H01L2224/83104 , H01L2924/00011 , H01L2924/00014 , H01L2924/01019 , H01L2924/01079 , H01L2924/15311 , H01L2924/19033 , H01L2224/0401
摘要： A high frequency flip chip package substrate of a polymer is a one-layer structure packaged by a high frequency flip chip package process to overcome the shortcomings of a conventional two-layer structure packaged by the high frequency flip chip package process. The conventional structure not only incurs additional insertion loss and return loss in its high frequency characteristic, but also brings out a reliability issue. Thus, the manufacturing process of a ceramic substrate in the conventional structure still has the disadvantages of a poor yield rate and a high cost.
摘要翻译： 聚合物的高频倒装芯片封装衬底是通过高频倒装芯片封装工艺封装的单层结构，以克服通过高频倒装芯片封装工艺封装的常规双层结构的缺点。 常规结构不仅在其高频特性中引起额外的插入损耗和回波损耗，而且带来可靠性问题。 因此，传统结构中的陶瓷基板的制造工序仍然具有成品率低，成本高的缺点。
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公开(公告)号：US08258606B2
公开(公告)日：2012-09-04
申请号：US13085602
申请日：2011-04-13
申请人： Edward-yi Chang , Li-Han Hsu , Chee-Way Oh , Wei-Cheng Wu , Chin-te Wang
发明人： Edward-yi Chang , Li-Han Hsu , Chee-Way Oh , Wei-Cheng Wu , Chin-te Wang
CPC分类号： H01L23/66 , H01L21/563 , H01L23/49816 , H01L24/16 , H01L24/81 , H01L2223/6627 , H01L2224/16 , H01L2224/73204 , H01L2224/81192 , H01L2224/81203 , H01L2224/81444 , H01L2224/81895 , H01L2224/82203 , H01L2224/83102 , H01L2224/83104 , H01L2924/00011 , H01L2924/00014 , H01L2924/01019 , H01L2924/01079 , H01L2924/15311 , H01L2924/19033 , H01L2224/0401
摘要： A high frequency flip chip package substrate of a polymer is a one-layer structure packaged by a high frequency flip chip package process to overcome the shortcomings of a conventional two-layer structure packaged by the high frequency flip chip package process. The conventional structure not only incurs additional insertion loss and return loss in its high frequency characteristic, but also brings out a reliability issue. Thus, the manufacturing process of a ceramic substrate in the conventional structure still has the disadvantages of a poor yield rate and a high cost.
摘要翻译： 聚合物的高频倒装芯片封装衬底是通过高频倒装芯片封装工艺封装的单层结构，以克服通过高频倒装芯片封装工艺封装的常规双层结构的缺点。 常规结构不仅在其高频特性中引起额外的插入损耗和回波损耗，而且带来可靠性问题。 因此，传统结构中的陶瓷基板的制造工序仍然具有成品率低，成本高的缺点。
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4.发明申请High Frequency Flip Chip Package Process of Polymer Substrate and Structure thereof 有权聚合物基板的高频倒装芯片封装工艺及其结构公开(公告)号：US20100248430A1
公开(公告)日：2010-09-30
申请号：US12547575
申请日：2009-08-26
申请人： Edward-yi Chang , Li-Han Hsu , Chee-Way Oil , Wei-Cheng Wu , Chin-te Wang
发明人： Edward-yi Chang , Li-Han Hsu , Chee-Way Oil , Wei-Cheng Wu , Chin-te Wang
IPC分类号： H01L21/56
CPC分类号： H01L23/66 , H01L21/563 , H01L23/49816 , H01L24/16 , H01L24/81 , H01L2223/6627 , H01L2224/16 , H01L2224/73204 , H01L2224/81192 , H01L2224/81203 , H01L2224/81444 , H01L2224/81895 , H01L2224/82203 , H01L2224/83102 , H01L2224/83104 , H01L2924/00011 , H01L2924/00014 , H01L2924/01019 , H01L2924/01079 , H01L2924/15311 , H01L2924/19033 , H01L2224/0401
摘要： In a high frequency flip chip package process of a polymer substrate and a structure thereof, the structure is a one-layer structure packaged by a high frequency flip chip package process to overcome the shortcomings of a conventional two-layer structure packaged by the high frequency flip chip package process. The conventional structure not only incurs additional insertion loss and return loss in its high frequency characteristic, but also brings out a reliability issue. Thus, the manufacturing process of a ceramic substrate in the conventional structure still has the disadvantages of a poor yield rate and a high cost.
摘要翻译： 在聚合物基板的高频倒装芯片封装工艺及其结构中，该结构是通过高频倒装芯片封装工艺封装的单层结构，以克服由高频率封装的常规双层结构的缺点 倒装芯片封装过程。 常规结构不仅在其高频特性中引起额外的插入损耗和回波损耗，而且带来可靠性问题。 因此，传统结构中的陶瓷基板的制造工序仍然具有成品率低，成本高的缺点。
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5.发明授权Vertical transmission line structure that includes bump elements for flip-chip mounting 有权垂直传输线结构，包括用于倒装芯片安装的凸块公开(公告)号：US07940143B2
公开(公告)日：2011-05-10
申请号：US12196529
申请日：2008-08-22
申请人： Edward Yi Chang , Wei-Cheng Wu , Ruey-Bing Hwang , Li-Han Hsu
发明人： Edward Yi Chang , Wei-Cheng Wu , Ruey-Bing Hwang , Li-Han Hsu
IPC分类号： H01P5/02
CPC分类号： H01P1/047 , H01L23/66 , H01L2223/6616 , H01L2223/6627 , H01L2924/0002 , H01L2924/09701 , H01L2924/19032 , H01L2924/19033 , H01L2924/3011 , H01P5/028 , H01L2924/00
摘要： A vertical transmission structure for high frequency transmission lines includes a conductive axial core and a conductive structure surrounding the conductive axial core. The vertical transmission structure is applied to a high-frequency flip chip package for reducing the possibility of underfill from coming in contact with the conductive axial core.
摘要翻译： 用于高频传输线的垂直传输结构包括导电轴芯和围绕导电轴芯的导电结构。 垂直传输结构被应用于高频倒装芯片封装，用于降低底部填充物与导电轴芯接触的可能性。
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公开(公告)号：US20090267201A1
公开(公告)日：2009-10-29
申请号：US12196529
申请日：2008-08-22
申请人： Edward Yi Chang , Wei-Cheng Wu , Ruey-Bing Hwang , Li-Han Hsu
发明人： Edward Yi Chang , Wei-Cheng Wu , Ruey-Bing Hwang , Li-Han Hsu
IPC分类号： H01L23/498 , H01P1/00
CPC分类号： H01P1/047 , H01L23/66 , H01L2223/6616 , H01L2223/6627 , H01L2924/0002 , H01L2924/09701 , H01L2924/19032 , H01L2924/19033 , H01L2924/3011 , H01P5/028 , H01L2924/00
摘要： A vertical transmission structure for high frequency transmission lines includes a conductive axial core and a conductive structure surrounding the conductive axial core. The vertical transmission structure is applied to a high-frequency flip chip package for reducing the possibility of underfill from coming in contact with the conductive axial core.
摘要翻译： 用于高频传输线的垂直传输结构包括导电轴芯和围绕导电轴芯的导电结构。 垂直传输结构被应用于高频倒装芯片封装，用于降低底部填充物与导电轴芯接触的可能性。
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7.发明授权Vertical transmission line structure that includes bump elements for flip-chip mounting 有权垂直传输线结构，包括用于倒装芯片安装的凸块公开(公告)号：US08169276B2
公开(公告)日：2012-05-01
申请号：US13023235
申请日：2011-02-08
申请人： Edward Yi Chang , Wei-Cheng Wu , Ruey-Bing Hwang , Li-Han Hsu
发明人： Edward Yi Chang , Wei-Cheng Wu , Ruey-Bing Hwang , Li-Han Hsu
IPC分类号： H01P5/02
CPC分类号： H01P1/047 , H01L23/66 , H01L2223/6616 , H01L2223/6627 , H01L2924/0002 , H01L2924/09701 , H01L2924/19032 , H01L2924/19033 , H01L2924/3011 , H01P5/028 , H01L2924/00
摘要： A vertical transmission structure for high frequency transmission lines includes a conductive axial core and a conductive structure surrounding the conductive axial core. The vertical transmission structure is applied to a high-frequency flip chip package for reducing the possibility of underfill from coming in contact with the conductive axial core.
摘要翻译： 用于高频传输线的垂直传输结构包括导电轴芯和围绕导电轴芯的导电结构。 垂直传输结构被应用于高频倒装芯片封装，用于降低底部填充物与导电轴芯接触的可能性。
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公开(公告)号：US08878182B2
公开(公告)日：2014-11-04
申请号：US13272004
申请日：2011-10-12
申请人： Tzu-Yu Wang , Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Hsien-Pin Hu , Wei-Cheng Wu , Li-Han Hsu , Meng-Han Lee
发明人： Tzu-Yu Wang , Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Hsien-Pin Hu , Wei-Cheng Wu , Li-Han Hsu , Meng-Han Lee
IPC分类号： H01L23/58 , H01L21/66 , H01L23/498 , H01L23/538 , H01L23/00 , H01L25/065 , H01L23/31
CPC分类号： H01L22/32 , H01L23/3128 , H01L23/49822 , H01L23/49827 , H01L23/49833 , H01L23/5384 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/73 , H01L25/0655 , H01L2224/131 , H01L2224/13147 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/15192 , H01L2924/15311 , H01L2924/014 , H01L2924/00012 , H01L2924/00
摘要： An interposer includes a first surface on a first side of the interposer and a second surface on a second side of the interposer, wherein the first and the second sides are opposite sides. A first probe pad is disposed at the first surface. An electrical connector is disposed at the first surface, wherein the electrical connector is configured to be used for bonding. A through-via is disposed in the interposer. Front-side connections are disposed on the first side of the interposer, wherein the front-side connections electrically couple the through-via to the probe pad.
摘要翻译： 插入器包括在插入件的第一侧上的第一表面和在插入件的第二侧上的第二表面，其中第一和第二侧是相对的两侧。 第一探针垫设置在第一表面。 电连接器设置在第一表面处，其中电连接器被配置为用于接合。 通孔设置在插入器中。 前侧连接设置在插入件的第一侧上，其中前侧连接将通孔电连接到探针垫。
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公开(公告)号：US20130092935A1
公开(公告)日：2013-04-18
申请号：US13272004
申请日：2011-10-12
申请人： Tzu-Yu Wang , Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Hsien-Pin Hu , Wei-Cheng Wu , Li-Han Hsu , Meng-Han Lee
发明人： Tzu-Yu Wang , Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Hsien-Pin Hu , Wei-Cheng Wu , Li-Han Hsu , Meng-Han Lee
CPC分类号： H01L22/32 , H01L23/3128 , H01L23/49822 , H01L23/49827 , H01L23/49833 , H01L23/5384 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/73 , H01L25/0655 , H01L2224/131 , H01L2224/13147 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/15192 , H01L2924/15311 , H01L2924/014 , H01L2924/00012 , H01L2924/00
摘要： An interposer includes a first surface on a first side of the interposer and a second surface on a second side of the interposer, wherein the first and the second sides are opposite sides. A first probe pad is disposed at the first surface. An electrical connector is disposed at the first surface, wherein the electrical connector is configured to be used for bonding. A through-via is disposed in the interposer. Front-side connections are disposed on the first side of the interposer, wherein the front-side connections electrically couple the through-via to the probe pad.
摘要翻译： 插入器包括在插入件的第一侧上的第一表面和在插入件的第二侧上的第二表面，其中第一和第二侧是相对的两侧。 第一探针垫设置在第一表面。 电连接器设置在第一表面处，其中电连接器被配置为用于接合。 通孔设置在插入器中。 前侧连接设置在插入件的第一侧上，其中前侧连接将通孔电连接到探针垫。
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公开(公告)号：US20110121923A1
公开(公告)日：2011-05-26
申请号：US13023235
申请日：2011-02-08
申请人： Edward Yi Chang , We-Cheng Wu , Ruey-Bing Hwang , Li-Han Hsu
发明人： Edward Yi Chang , We-Cheng Wu , Ruey-Bing Hwang , Li-Han Hsu
IPC分类号： H01P3/08
CPC分类号： H01P1/047 , H01L23/66 , H01L2223/6616 , H01L2223/6627 , H01L2924/0002 , H01L2924/09701 , H01L2924/19032 , H01L2924/19033 , H01L2924/3011 , H01P5/028 , H01L2924/00
摘要： A vertical transmission structure for high frequency transmission lines includes a conductive axial core and a conductive structure surrounding the conductive axial core. The vertical transmission structure is applied to a high-frequency flip chip package for reducing the possibility of underfill from coming in contact with the conductive axial core.
摘要翻译： 用于高频传输线的垂直传输结构包括导电轴芯和围绕导电轴芯的导电结构。 垂直传输结构被应用于高频倒装芯片封装，用于降低底部填充物与导电轴芯接触的可能性。
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