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49 条记录 (耗时 0.016 秒)

    Multilayer substrate having gallium nitride layer and method for forming the same
    3.
    发明授权
    Multilayer substrate having gallium nitride layer and method for forming the same 有权
    具有氮化镓层的多层基板及其形成方法

    公开(公告)号：US08263425B2

    公开(公告)日：2012-09-11

    申请号：US12976598

    申请日：2010-12-22

    申请人： Edward Yi Chang ,  Yu-Lin Hsiao ,  Jung-Chi Lu

    发明人： Edward Yi Chang ,  Yu-Lin Hsiao ,  Jung-Chi Lu

    IPC分类号： H01L21/20

    CPC分类号： H01L29/2003 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02639 ,  H01L29/66462 ,  H01L29/778

    摘要： The present invention provides a method for forming a multilayer substrate having a gallium nitride layer, wherein a mesh layer having a plurality of openings is formed on a substrate, and a buffer layer, three aluminum gallium nitride layers with different aluminum concentrations and a gallium nitride layer are formed in sequence on the substrate in the openings. The three aluminum gallium nitride layers with different aluminum concentrations are capable of releasing stress, decreasing cracks on the surface of the gallium nitride layer and controlling interior defects, such that the present invention provides a gallium nitride layer with larger area, greater thickness, no cracks and high quality for facilitating the formation of high performance electronic components in comparison with the prior art. The present invention further provides a multilayer substrate having a gallium nitride layer.

    摘要翻译： 本发明提供一种形成具有氮化镓层的多层基板的方法，其中在基板上形成具有多个开口的网格层，缓冲层，具有不同铝浓度的三个氮化铝镓层和氮化镓 层在开口中的基板上依次形成。 具有不同铝浓度的三个氮化铝铝层能够释放应力，减少氮化镓层表面上的裂纹并控制内部缺陷，使得本发明提供具有较大面积，更大厚度，无裂纹的氮化镓层 并且与现有技术相比有利于形成高性能电子部件的高质量。 本发明还提供了具有氮化镓层的多层基板。

    POWER CIRCUIT AND DIRECT CURRENT TO DIRECT CURRENT CONVERTER THEREOF
    4.
    发明申请
    POWER CIRCUIT AND DIRECT CURRENT TO DIRECT CURRENT CONVERTER THEREOF 有权
    电源电流和直流电流直流电流转换器

    公开(公告)号：US20120147640A1

    公开(公告)日：2012-06-14

    申请号：US13014241

    申请日：2011-01-26

    申请人： Edward Yi Chang ,  Shyr Long Jeng ,  Ming Tsan Peng

    发明人： Edward Yi Chang ,  Shyr Long Jeng ,  Ming Tsan Peng

    IPC分类号： H02M7/217 ,  H03K3/00

    CPC分类号： H02M7/2176

    摘要： A power circuit is applicable to a Direct Current (DC) to DC converter. The power circuit includes a gate driver circuit and a High Electron Mobility Transistor (HEMT). The gate driver circuit functions as a Sigmoid (S) function and controls a gate and a source of the HEMT with a cross voltage of the sigmoid (S) type function. Accordingly, an overall characteristic curve of the HEMT and the gate driver circuit is like a characteristic curve of a single rectifier diode, so as to achieve a rectifying, freewheeling, or reversing effect. In addition, since an energy loss is low when the HEMT is conducted, the energy loss of the whole power circuit is much less than that of a conventional diode.

    摘要翻译： 电源电路适用于直流（DC）到直流转换器。 电源电路包括栅极驱动电路和高电子迁移率晶体管（HEMT）。 栅极驱动器电路用作S形（S）功能，并用S型功能的交叉电压控制HEMT的栅极和源极。 因此，HEMT和栅极驱动电路的总体特性曲线与单个整流二极管的特性曲线相同，以实现整流，续流或反转效果。 另外，由于在HEMT导通时能量损失低，所以整个电源电路的能量损耗比传统的二极管的能量损耗要小得多。

    High Electron Mobility Transistor and Method for Fabricating the Same
    5.
    发明申请
    High Electron Mobility Transistor and Method for Fabricating the Same 有权
    高电子迁移率晶体管及其制造方法

    公开(公告)号：US20110156100A1

    公开(公告)日：2011-06-30

    申请号：US12759012

    申请日：2010-04-13

    申请人： Edward Yi Chang ,  Chien-I Kuo ,  Heng-Tung Hsu

    发明人： Edward Yi Chang ,  Chien-I Kuo ,  Heng-Tung Hsu

    IPC分类号： H01L29/778 ,  H01L21/335

    CPC分类号： H01L29/7787 ,  B82Y10/00 ,  H01L29/1029 ,  H01L29/15 ,  H01L29/66462 ,  H01L29/7783

    摘要： A high electron mobility transistor includes a substrate, a buffer layer, a channel layer, a spacer layer, a schottky layer and a cap layer. The buffer layer is formed on the substrate. The channel layer is formed on the buffer layer, in which the channel layer comprises a superlattice structure formed with a plurality of indium gallium arsenide thin films alternately stacked with a plurality of indium arsenide thin films. The spacer layer is formed on the channel layer. The schottky layer is formed on the spacer layer. The cap layer is formed on the schottky layer.

    摘要翻译： 高电子迁移率晶体管包括衬底，缓冲层，沟道层，间隔层，肖特基层和覆盖层。 缓冲层形成在基板上。 沟道层形成在缓冲层上，其中沟道层包括由多个砷化铟锡薄膜交替层叠的多个砷化铟镓薄膜形成的超晶格结构。 间隔层形成在沟道层上。 在间隔层上形成肖特基层。 盖层形成在肖特基层上。

    Copper metalized ohmic contact electrode of compound device
    6.
    发明授权
    Copper metalized ohmic contact electrode of compound device 有权
    复合器件​​的铜金属化欧姆接触电极

    公开(公告)号：US07368822B2

    公开(公告)日：2008-05-06

    申请号：US11377302

    申请日：2006-03-17

    申请人： Cheng-Shih Lee ,  Edward Yi Chang ,  Ke-Shian Chen

    发明人： Cheng-Shih Lee ,  Edward Yi Chang ,  Ke-Shian Chen

    IPC分类号： H01L23/48

    CPC分类号： H01L21/28575

    摘要： The present invention provides an ohmic contact for a copper metallization whose heat diffusion is improved and cost is reduced. Therein, the ohmic contact is formed through a depositing and an annealing of three metal layers of Pd, Ge and Cu; and, the contact resistance of the ohmic contact is adjusted by the thicknesses of the three layers.

    摘要翻译： 本发明提供了一种用于铜金属化的欧姆接触，其热扩散得到改善并且成本降低。 其中，通过Pd，Ge和Cu的三个金属层的沉积和退火形成欧姆接触; 并且通过三层的厚度来调整欧姆接触的接触电阻。

    Current limit circuit apparatus
    9.
    发明申请
    Current limit circuit apparatus 有权
    限流电路装置

    公开(公告)号：US20130241603A1

    公开(公告)日：2013-09-19

    申请号：US13596104

    申请日：2012-08-28

    申请人： Tsung-Lin CHEN ,  Edward Yi CHANG ,  Wei-Hua CHIENG ,  Stone CHENG ,  Shyr-Long JENG ,  Shin-Wei HUANG

    发明人： Tsung-Lin CHEN ,  Edward Yi CHANG ,  Wei-Hua CHIENG ,  Stone CHENG ,  Shyr-Long JENG ,  Shin-Wei HUANG

    IPC分类号： H03K3/00

    CPC分类号： H03K17/163

    摘要： The present invention provides a current limit circuit apparatus, coupled with the gate of a GaN transistor. The current limit circuit comprises a diode, a first transistor, a second transistor, a first resistor, a second resistor, a third resistor and a fourth resistor. The source and the drain of the first transistor couple with the diode. The source of the second transistor couples with the gate of the first transistor. The source of the first transistor couples with the first transistor. The source of the second transistor couples with the second resistor. The third resistor couples with the fourth resistor and the gate of the first transistor. The first transistor turned off and the gate current is limited. When the current of the gate of the GaN transistor exceeds the predetermined value, the breakdown voltage is increased by limiting the gate current.

    摘要翻译： 本发明提供一种与GaN晶体管的栅极耦合的限流电路装置。 电流限制电路包括二极管，第一晶体管，第二晶体管，第一电阻器，第二电阻器，第三电阻器和第四电阻器。 第一晶体管的源极和漏极与二极管耦合。 第二晶体管的源极与第一晶体管的栅极耦合。 第一晶体管的源极与第一晶体管耦合。 第二晶体管的源极与第二电阻耦合。 第三电阻器与第四电阻器和第一晶体管的栅极耦合。 第一晶体管截止，栅极电流受限。 当GaN晶体管的栅极的电流超过预定值时，通过限制栅极电流来增加击穿电压。

    STRUCTURE OF HIGH ELECTRON MOBILITY TRANSISTOR GROWTH ON SI SUBSTRATE AND THE METHOD THEREOF
    10.
    发明申请
    STRUCTURE OF HIGH ELECTRON MOBILITY TRANSISTOR GROWTH ON SI SUBSTRATE AND THE METHOD THEREOF 有权
    高电子移动晶体管生长在基片上的结构及其方法

    公开(公告)号：US20130049070A1

    公开(公告)日：2013-02-28

    申请号：US13561977

    申请日：2012-07-30

    申请人： Edward YI CHANG ,  Shih-Hsuan Tang ,  Yueh-Chin Lin

    发明人： Edward YI CHANG ,  Shih-Hsuan Tang ,  Yueh-Chin Lin

    IPC分类号： H01L29/778 ,  H01L21/20

    CPC分类号： H01L29/7784 ,  H01L29/267

    摘要： A structure of high electron mobility transistor growth on Si substrate and the method thereof, in particular used for the semiconductor device manufacturing in the semiconductor industry. The UHVCVD system was used in the related invention to grow a Ge film on Si substrate then grow the high electron mobility transistor on the Ge film for the reduction of buffer layer thickness and cost. The function of the Ge film is preventing the formation of silicon oxide when growing III-V MHEMT structure in MOCVD system on Si substrate. The reason of using MHEMT in the invention is that the metamorphic buffer layer in MHEMT structure could block the penetration of dislocation which is formed because of the very large lattice mismatch (4.2%) between Ge and Si substrate.

    摘要翻译： Si衬底上高电子迁移率晶体管生长的结构及其方法，特别用于半导体工业中的半导体器件制造。 在相关发明中使用UHVCVD系统在Si衬底上生长Ge膜，然后在Ge膜上生长高电子迁移率晶体管以降低缓冲层厚度和成本。 当Si衬底上的MOCVD系统中生长III-V MHEMT结构时，Ge膜的功能是防止形成氧化硅。 在本发明中使用MHEMT的原因是，MHEMT结构中的变质缓冲层可以阻止由于Ge和Si衬底之间的非常大的晶格失配（4.2％）而形成的位错渗透。