利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

32 条记录 (耗时 0.017 秒)

    Method of evaluating a semiconductor wafer
    1.
    发明授权
    Method of evaluating a semiconductor wafer 失效
    评估半导体晶片的方法

    公开(公告)号：US5897327A

    公开(公告)日：1999-04-27

    申请号：US14084

    申请日：1998-01-27

    申请人： Eiichi Asano ,  Hisami Motoura ,  Yasuhiro Shimada

    发明人： Eiichi Asano ,  Hisami Motoura ,  Yasuhiro Shimada

    IPC分类号： G01N27/00 ,  H01L21/66 ,  G01R31/26

    CPC分类号： H01L22/12

    摘要： A MOS capacitor in which an insulating layer of thermal oxide film is disposed between the electrode 2 and the silicon wafer 1 is formed. While a light beam of an energy larger than 1.1 eV is irradiated on the electrode 2 and its periphery, electrons inject from the electrode 2 side (voltage is applied from the silicon wafer 1 side). The injected electrons are activated by the light irradiation. For both p-type or n-type semiconductor, the dielectric breakdown electric field strength can be precisely measured according to the degree of processing defects. The evaluation method is particularly effective for the n-type semiconductor wafer, which was difficult to evaluate by the prior art.

    摘要翻译： 形成在电极2和硅晶片1之间配置有热氧化膜绝缘层的MOS电容器。 虽然能量大于1.1eV的光束照射在电极2及其周围，但电子从电极2侧注入电压（从硅晶片1侧施加电压）。 注入的电子被光照射激活。 对于p型或n型半导体，可以根据加工缺陷的程度精确地测量绝缘击穿电场强度。 该评价方法对于现有技术难以评价的n型半导体晶片特别有效。

    Method of evaluating a silicon wafer
    2.
    发明授权
    Method of evaluating a silicon wafer 失效
    评估硅晶片的方法

    公开(公告)号：US5990022A

    公开(公告)日：1999-11-23

    申请号：US998756

    申请日：1997-12-29

    申请人： Hisami Motoura ,  Eiichi Asano

    发明人： Hisami Motoura ,  Eiichi Asano

    IPC分类号： H01L21/66 ,  H01L23/544 ,  H01L21/312

    CPC分类号： H01L22/20 ,  H01L22/34 ,  H01L22/12

    摘要： The evaluating method includes: dipping a mirror-polished silicon wafer in a dilute hydrofluoric acid; washing the surface of the silicon wafer; subjecting the surface-washed silicon wafer to a heat treatment in an oxygen atmosphere to form a thermal oxidation film; forming a predetermined number of polycrystalline silicon electrodes having a predetermined area on the thermal oxidation film; applying a voltage to each electrode between the predetermined number of polycrystalline silicon electrodes and the silicon wafer; and judging the quality of the mirror-polishing process of the silicon wafers in accordance with the breakdown electric field intensity of the leakage current obtained by measuring the oxide film insulation.

    摘要翻译： 评价方法包括：将镜面抛光的硅晶片浸入稀氢氟酸中; 洗涤硅晶片的表面; 使经表面洗涤的硅晶片在氧气氛中进行热处理以形成热氧化膜; 在热氧化膜上形成预定数量的具有预定面积的多晶硅电极; 在预定数量的多晶硅电极和硅晶片之间的每个电极施加电压; 并且根据通过测量氧化膜绝缘获得的漏电流的击穿电场强度判断硅晶片的镜面抛光工艺的质量。

    Method of manufacturing a semiconductor wafer
    3.
    发明授权
    Method of manufacturing a semiconductor wafer 失效
    制造半导体晶片的方法

    公开(公告)号：US5904568A

    公开(公告)日：1999-05-18

    申请号：US941294

    申请日：1997-09-30

    申请人： Masahiko Maeda ,  Takamitsu Harada ,  Hisami Motoura ,  Eiichi Asano

    发明人： Masahiko Maeda ,  Takamitsu Harada ,  Hisami Motoura ,  Eiichi Asano

    IPC分类号： H01L21/306 ,  H01L21/302 ,  H01L21/304 ,  H01L21/00 ,  H01L21/02

    CPC分类号： H01L21/02008

    摘要： A process for precisely and efficiently manufacturing a semiconductor wafer is provided, which can prevent contamination by metals inside silicon crystals and remove the factors that degrade the GOI produced during the wafer manufacturing steps. A sliced and chamfered semiconductor wafer is subjected to lapping. The lapped semiconductor wafer is then etched, and thus the working strains produced by lapping is removed. The two sides of the etched semiconductor wafer are then primary polished with a dual-surface polishing machine. The primary polished semiconductor wafer is etched with an aqueous solution of 1% NaOH solution. The weak alkali etched semiconductor wafer is then mirror processed by a finish polishing. The finish polished semiconductor wafer is washed with an SC-1 solution.

    摘要翻译： 提供了精确高效地制造半导体晶片的方法，其可以防止硅晶体内的金属的污染，并消除在晶片制造步骤期间产生的降低GOI的因素。 对切​​割的和倒角的半导体晶片进行研磨。 然后对重叠的半导体晶片进行蚀刻，从而去除通过研磨产生的工作应变。 然后用双面抛光机对蚀刻的半导体晶片的两面进行初级抛光。 用1％NaOH溶液的水溶液蚀刻主抛光的半导体晶片。 然后通过精加工抛光对弱碱蚀刻的半导体晶片进行镜面加工。 精加工的半导体晶片用SC-1溶液洗涤。

    Semiconductor encapsulating epoxy resin composition and semiconductor device
    4.
    发明授权
    Semiconductor encapsulating epoxy resin composition and semiconductor device 有权
    半导体封装环氧树脂组合物和半导体器件

    公开(公告)号：US07432603B2

    公开(公告)日：2008-10-07

    申请号：US11138378

    申请日：2005-05-27

    申请人： Eiichi Asano ,  Toshio Shiobara

    发明人： Eiichi Asano ,  Toshio Shiobara

    IPC分类号： H01L23/29 ,  C08L63/00 ,  B32B27/04 ,  B32B27/20 ,  B32B27/38 ,  H01L21/56

    CPC分类号： C08G59/08 ,  C08G59/621 ,  C08G59/688 ,  Y10T428/31511 ,  Y10T428/31522 ,  Y10T428/31529

    摘要： In an epoxy resin composition comprising (A) an epoxy resin, (B) a curing agent, (C) an inorganic compound, and (D) an inorganic filler, the inorganic compound (C) is an oxide of metal elements at least one of which is a metal element of Group II in the Periodic Table having a second ionization potential of up to 20 eV, typically Zn2SiO4, ZnCrO4, ZnFeO4 or ZnMoO4. When used for semiconductor encapsulation, the epoxy resin composition is highly reliable and cures into a product which is effective for minimizing electrical failure such as defective insulation due to a copper migration phenomenon.

    摘要翻译： 在包含（A）环氧树脂，（B）固化剂，（C）无机化合物和（D）无机填料）的环氧树脂组合物中，无机化合物（C）是至少一种金属元素的氧化物 其中元素周期表中的II族金属元素具有高达20eV的第二电离电位，通常为Zn 2 SiO 4，ZnCrO 4， / SO 2，ZnFeO 4或ZnMoO 4。 当用于半导体封装时，环氧树脂组合物是高度可靠的并且固化成对于最小化电气故障有效的产品，例如由于铜迁移现象导致的不良绝缘。

    Semiconductor encapsulating epoxy resin composition and semiconductor device
    8.
    发明申请
    Semiconductor encapsulating epoxy resin composition and semiconductor device 审中-公开
    半导体封装环氧树脂组合物和半导体器件

    公开(公告)号：US20070106036A1

    公开(公告)日：2007-05-10

    申请号：US11593108

    申请日：2006-11-06

    申请人： Eiichi Asano ,  Yasuo Kimura

    发明人： Eiichi Asano ,  Yasuo Kimura

    IPC分类号： C08L63/02 ,  C08G77/42

    CPC分类号： C08G59/3254 ,  C08G59/3218 ,  C08G59/621 ,  C08G77/42 ,  C08L83/10 ,  H01L23/293 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An epoxy resin composition comprising (A) a naphthalene type epoxy resin in which 35-85 parts by weight of 1,1-bis(2-glycidyloxy-1-naphthyl)alkane and 1-35 parts by weight of 1,1-bis(2,7-diglycidyloxy-1-naphthyl)alkane are included per 100 parts by weight of the resin, (B) a phenolic resin curing agent, (C) a copolymer obtained through addition reaction of alkenyl groups on an alkenyl-containing epoxy compound and SiH groups on an organohydrogenpolysiloxane of 20 to 50 silicon atoms, and (D) an inorganic filler is best suited for semiconductor encapsulation because the cured composition has good thermal cycling, anti-warping, reflow resistance, and moisture-proof reliability.

    摘要翻译： 一种环氧树脂组合物，其包含（A）萘型环氧树脂，其中35-85重量份的1,1-双（2-缩水甘油氧基-1-萘基）烷烃和1-35重量份的1,1-双 （2,7-二缩水甘油氧基-1-萘基）烷烃包括每100重量份的树脂，（B）酚醛树脂固化剂，（C）通过在含链烯基的环氧树脂上加成烯基而得到的共聚物 在20至50个硅原子的有机氢聚硅氧烷上的化合物和SiH基团，和（D）无机填料最适合于半导体封装，因为固化的组合物具有良好的热循环性，抗翘曲性，耐回流性和防潮可靠性。

    Semiconductor encapsulating epoxy resin composition and semiconductor device
    10.
    发明申请
    Semiconductor encapsulating epoxy resin composition and semiconductor device 有权
    半导体封装环氧树脂组合物和半导体器件

    公开(公告)号：US20050267236A1

    公开(公告)日：2005-12-01

    申请号：US11138378

    申请日：2005-05-27

    申请人： Eiichi Asano ,  Toshio Shiobara

    发明人： Eiichi Asano ,  Toshio Shiobara

    IPC分类号： C08L63/00 ,  C08G59/08 ,  C08G59/62 ,  C08G59/68 ,  C08K3/24 ,  H01L23/29 ,  H01L23/31

    CPC分类号： C08G59/08 ,  C08G59/621 ,  C08G59/688 ,  Y10T428/31511 ,  Y10T428/31522 ,  Y10T428/31529

    摘要： In an epoxy resin composition comprising (A) an epoxy resin, (B) a curing agent, (C) an inorganic compound, and (D) an inorganic filler, the inorganic compound (C) is an oxide of metal elements at least one of which is a metal element of Group II in the Periodic Table having a second ionization potential of up to 20 eV, typically Zn2SiO4, ZnCrO4, ZnFeO4 or ZnMoO4. When used for semiconductor encapsulation, the epoxy resin composition is highly reliable and cures into a product which is effective for minimizing electrical failure such as defective insulation due to a copper migration phenomenon.

    摘要翻译： 在包含（A）环氧树脂，（B）固化剂，（C）无机化合物和（D）无机填料）的环氧树脂组合物中，无机化合物（C）是金属元素的氧化物，至少一种 其中元素周期表中的II族金属元素具有高达20eV的第二电离电位，通常为Zn 2 SiO 4，ZnCrO 4， / SO 2，ZnFeO 4或ZnMoO 4。 当用于半导体封装时，环氧树脂组合物是高度可靠的并且固化成对于最小化电气故障有效的产品，例如由于铜迁移现象导致的不良绝缘。