公开(公告)号：US09359693B2

公开(公告)日：2016-06-07

申请号：US13781054

申请日：2013-02-28

申请人： Element Six Technologies US Corporation

发明人： Daniel Francis ,  Firooz Faili ,  Kristopher Matthews ,  Frank Yantis Lowe ,  Quentin Diduck ,  Sergey Zaytsev ,  Felix Ejeckam

IPC分类号： C30B25/16 ,  C30B25/10 ,  C30B25/18 ,  C30B25/20 ,  C30B29/04 ,  H01L21/02 ,  C23C16/27 ,  C23C16/46 ,  H01L29/20 ,  H01L29/778 ,  H01L21/18

CPC分类号： C30B25/16 ,  C23C16/271 ,  C23C16/463 ,  C30B25/10 ,  C30B25/18 ,  C30B25/183 ,  C30B25/205 ,  C30B29/04 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02527 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/187 ,  H01L29/2003 ,  H01L29/7786

摘要： A method for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers, with synthetic diamond substrates is disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.

摘要翻译： 公开了一种用于将宽间隙半导体，特别是氮化镓外延层与合成金刚石衬底集成的方法。 通过将沉积合成金刚石沉积到沉积或形成在包括至少一层氮化镓的层状结构上的成核层上而形成金刚石基底。 公开了用于制造具有低弓形和高结晶质量的GaN-金刚石晶片的方法以及针对特定应用定制的用于制造在金刚石GaN晶片和芯片上的优选选择。

公开(公告)号：US08759134B2

公开(公告)日：2014-06-24

申请号：US14163681

申请日：2014-01-24

申请人： Element Six Technologies US Corporation

发明人： Felix Ejeckam ,  Daniel Francis ,  Quentin Diduck ,  Firooz Nasser-Faili ,  Dubravko Babić

IPC分类号： H01L29/20 ,  H01L23/36

CPC分类号： H01L21/0254 ,  C30B25/183 ,  C30B29/406 ,  H01L21/02376 ,  H01L21/02381 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0262 ,  H01L21/76838 ,  H01L21/78 ,  H01L23/3732 ,  H01L24/32 ,  H01L29/1602 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/00

摘要： Methods for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer made out of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.

公开(公告)号：US20140141595A1

公开(公告)日：2014-05-22

申请号：US14163681

申请日：2014-01-24

申请人： ELEMENT SIX TECHNOLOGIES US CORPORATION

发明人： Dubravko Babic ,  Firooz Nasser-Faili ,  Daniel Francis ,  Quentin Diduck ,  Felix Ejeckam

IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L21/78

CPC分类号： H01L21/0254 ,  C30B25/183 ,  C30B29/406 ,  H01L21/02376 ,  H01L21/02381 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0262 ,  H01L21/76838 ,  H01L21/78 ,  H01L23/3732 ,  H01L24/32 ,  H01L29/1602 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/00

摘要： Methods for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer made out of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.

摘要翻译： 公开了用于集成宽间隙半导体，特别是用合成金刚石衬底的氮化镓外延层的方法。 金刚石基底通过将合成金刚石沉积到沉积或形成在包含由氮化镓制成的至少一层的分层结构上的成核层而产生。 公开了用于制造具有低弓形和高结晶质量的GaN-金刚石晶片的方法以及针对特定应用定制的用于制造在金刚石GaN晶片和芯片上的优选选择。