公开(公告)号：US20070235714A1

公开(公告)日：2007-10-11

申请号：US11441989

申请日：2006-05-26

申请人： Soon Kwon ,  Byoung Choi ,  Eun Lee ,  Kyung Cho ,  In Han ,  Jae Lee ,  Seong Choi

发明人： Soon Kwon ,  Byoung Choi ,  Eun Lee ,  Kyung Cho ,  In Han ,  Jae Lee ,  Seong Choi

IPC分类号： H01L29/06

CPC分类号： C30B29/62 ,  C23C16/045 ,  C30B25/005 ,  Y10S977/764 ,  Y10S977/784 ,  Y10S977/785 ,  Y10S977/953 ,  Y10S977/957

摘要： A nanowire composite and a method of preparing the nanowire composite comprise a template having a plurality of hollow channels, nanowires formed within the respective channels of the template, and a functional element formed by removing a portion of the template so that one or more of the nanowires formed within the portion of the template are exposed. Since the nanowire composite can be prepared in a simple manner at low costs and can be miniaturized, the nanowire composite finds application in resonators and a variety of sensors.

摘要翻译： 纳米线复合材料和制备纳米线复合材料的方法包括具有多个中空通道的模板，形成在模板的相应通道内的纳米线，以及通过去除模板的一部分而形成的功能元件，使得一个或多个 形成在模板部分内的纳米线被暴露。 由于纳米线复合材料可以以简单的方式以低成本制备并且可以小型化，纳米线复合材料可应用于谐振器和各种传感器。

公开(公告)号：US20070232028A1

公开(公告)日：2007-10-04

申请号：US11444115

申请日：2006-05-31

申请人： Eun Lee ,  Byoung Choi ,  Soon Kwon ,  Kyung Cho ,  Jae Lee

发明人： Eun Lee ,  Byoung Choi ,  Soon Kwon ,  Kyung Cho ,  Jae Lee

IPC分类号： H01L29/06 ,  H01L21/8242 ,  H01L21/20

CPC分类号： C30B29/06 ,  B82Y10/00 ,  B82Y30/00 ,  C30B11/12 ,  C30B25/00 ,  C30B29/605 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/16 ,  H01L31/1804 ,  H01L33/20 ,  H01S5/10 ,  H01S5/3031 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S977/762 ,  Y10S977/778 ,  Y10S977/78 ,  Y10S977/784 ,  Y10S977/785 ,  Y10S977/932 ,  Y10S977/949

摘要： A method of manufacturing silicon nanowires is characterized in that silicon nanowires are formed and grown through a solid-liquid-solid process or a vapor-liquid-solid process using a porous glass template having nanopores doped with erbium or an erbium precursor. In addition, a device including silicon nanowires formed using the above exemplary method according to the present invention can be effectively applied to various devices, for example, electronic devices such as field effect transistors, sensors, photodetectors, light emitting diodes, laser diodes, etc.

摘要翻译： 制造硅纳米线的方法的特征在于，使用具有掺杂有铒或铒前体的纳米孔的多孔玻璃模板，通过固 - 液 - 固体方法或气液固化法形成和生长硅纳米线。 此外，使用根据本发明的上述示例性方法形成的包括硅纳米线的器件可以有效地应用于各种器件，例如诸如场效应晶体管，传感器，光电检测器，发光二极管，激光二极管等的电子器件 。

公开(公告)号：US20070241662A1

公开(公告)日：2007-10-18

申请号：US11442875

申请日：2006-05-30

申请人： Byoung Choi ,  Kyung Cho ,  Soon Kwon ,  Eun Lee ,  Jae Lee

发明人： Byoung Choi ,  Kyung Cho ,  Soon Kwon ,  Eun Lee ,  Jae Lee

IPC分类号： H05B33/00

CPC分类号： H05B33/20 ,  Y10T428/2929

摘要： An electroluminescent element and an electronic device including the electroluminescent element include a glass template having a silica layer as a matrix, electrodes and a luminescent material. Since the electroluminescent element according to the present invention includes silica as a matrix, the electroluminescent element has a stabilized structure even though a space between the luminescent layer and the electrode of the glass template is not filled. Further, such an electroluminescent element may be easily prepared, and thus may be effectively applied to various electronic devices, such as display devices, illumination devices and backlight units.

摘要翻译： 包括电致发光元件的电致发光元件和电子器件包括具有二氧化硅层作为基体的玻璃模板，电极和发光材料。 由于根据本发明的电致发光元件包括二氧化硅作为基质，所以即使未填充玻璃模板的发光层和电极之间的空间，电致发光元件也具有稳定的结构。 此外，这种电致发光元件可以容易地制备，并且因此可以有效地应用于诸如显示装置，照明装置和背光单元的各种电子装置。

公开(公告)号：US20070069202A1

公开(公告)日：2007-03-29

申请号：US11390851

申请日：2006-03-28

申请人： Byoung Choi ,  Byung Kim ,  Kyung Cho ,  Soon Kwon ,  Jae Choi

发明人： Byoung Choi ,  Byung Kim ,  Kyung Cho ,  Soon Kwon ,  Jae Choi

IPC分类号： H01L51/00

CPC分类号： H01L51/5012 ,  B82Y20/00 ,  B82Y30/00 ,  H01L33/08 ,  H01L33/18

摘要： A light-emitting device including a semiconductor nanocrystal layer and a method for producing the light-emitting device are provided. The light-emitting device includes a semiconductor nanocrystal layer whose voids are filled with a filling material. According to the light-emitting device, since voids formed between nanocrystal particles of the semiconductor nanocrystal layer are filled with a filling material, the occurrence of a current leakage through the voids is minimized, which enables the device to have extended service life, high luminescence efficiency, and improved stability.

摘要翻译： 提供了包括半导体纳米晶层的发光器件和用于制造发光器件的方法。 发光器件包括其填充有填充材料的空隙的半导体纳米晶体层。 根据发光装置，由于在半导体纳米晶层的纳米晶粒之间形成的空隙填充有填充材料，所以通过空隙的电流泄漏的发生被最小化，这使得器件具有延长的使用寿命，高发光度 效率和稳定性的提高。

公开(公告)号：US20070007511A1

公开(公告)日：2007-01-11

申请号：US11392543

申请日：2006-03-30

申请人： Jae Choi ,  Kyung Cho ,  Seon Yoon ,  Eun Lee ,  Jae Lee

发明人： Jae Choi ,  Kyung Cho ,  Seon Yoon ,  Eun Lee ,  Jae Lee

IPC分类号： H01L29/08 ,  B32B19/00 ,  H01L51/00

CPC分类号： B82Y40/00 ,  B05D1/00 ,  B05D3/0493 ,  B05D3/10 ,  B82Y30/00 ,  Y10T428/29

摘要： A nanoparticle thin film, a method for dispersing nanoparticles and a method for producing nanoparticle thin film using the same. The method for dispersing nanoparticles may include modifying the surface of nanoparticles with a charged material, drying the surface-modified nanoparticles under vacuum and/or dispersing the dried nanoparticles in a solvent. According to the methods provided, the nanoparticle thin film may exhibit more stability, lesser defects and/or lesser aggregation of nanoparticles. In addition, 2-dimensional and/or 3-dimensional nanoparticle thin films may be produced in which nanoparticles may be more uniformly applied over larger areas. The nanoparticle thin films produced by the methods may be more effectively used for a variety of applications (e.g., flash memory devices, DRAMs, hard disks, luminescent devices, organic light-emitting diodes (OLEDs) or the like).

摘要翻译： 纳米颗粒薄膜，分散纳米颗粒的方法和使用其制备纳米颗粒薄膜的方法。 分散纳米颗粒的方法可以包括用带电材料改性纳米颗粒的表面，在真空下干燥表面改性的纳米颗粒和/或将干燥的纳米颗粒分散在溶剂中。 根据所提供的方法，纳米颗粒薄膜可以表现出更大的稳定性，较小的缺陷和/或较小的纳米颗粒的聚集。 此外，可以制备二维和/或三维纳米颗粒薄膜，其中纳米颗粒可以在更大的区域上更均匀地施加。 通过该方法制备的纳米颗粒薄膜可以更有效地用于各种应用（例如闪存器件，DRAM，硬盘，发光器件，有机发光二极管（OLED）等）。

公开(公告)号：US20070054502A1

公开(公告)日：2007-03-08

申请号：US11514200

申请日：2006-09-01

申请人： Kwang Seol ,  Kyung Cho ,  Byung Kim ,  Eun Lee ,  Jae Choi

发明人： Kwang Seol ,  Kyung Cho ,  Byung Kim ,  Eun Lee ,  Jae Choi

IPC分类号： H01L21/31

CPC分类号： B82Y10/00 ,  H01L29/42332 ,  H01L29/7881

摘要： A nanodot memory formed by applying a nanodot colloid solution on a semiconductor substrate to more uniformly arranging nanodot particles with a size of several nanometers on the semiconductor substrate and a fabrication method thereof are provided. In the nanodot memory fabrication method, a first insulating film may be formed on a surface of a substrate. A nanodot colloid solution may be applied on the first insulating film. A solvent in the nanodot colloid solution may be removed such that a nanodot particles layer remains exposed on the first insulating film. A second insulating film may be formed on a surface of the semiconductor substrate, on which the nanodot particles are exposed. The nanodot particles may be formed in a monolayer structure by adjusting a concentration of nanodot particles within the nanodot colloid solution.

摘要翻译： 提供了通过在半导体衬底上施加纳米棒胶体溶液以在半导体衬底上更均匀地布置尺寸为几纳米的纳米点颗粒而形成的纳米点存储器及其制造方法。 在纳米点存储器制造方法中，可以在基板的表面上形成第一绝缘膜。 可以在第一绝缘膜上施加纳米点胶体溶液。 可以除去纳米点胶体溶液中的溶剂，使得纳米点颗粒层保持暴露在第一绝缘膜上。 可以在半导体衬底的暴露了纳米点颗粒的表面上形成第二绝缘膜。 纳米点颗粒可以通过调节纳米点胶体溶液中的纳米点颗粒的浓度而形成为单层结构。