公开(公告)号：US08421134B2

公开(公告)日：2013-04-16

申请号：US12976851

申请日：2010-12-22

申请人： In Gyun Jeon ,  Se Jung Oh ,  Heui Gyun Ahn ,  Jun Ho Won

发明人： In Gyun Jeon ,  Se Jung Oh ,  Heui Gyun Ahn ,  Jun Ho Won

IPC分类号： H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/14634

摘要： A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.

摘要翻译： 减小芯片尺寸的背面照明图像传感器具有设置在后侧照明图像传感器中的像素区域的垂直上部的电容器，其中光从用户的背面被照射，从而减小了芯片尺寸，并且 背面照明图像传感器的制造方法。 减少芯片尺寸的背面照明图像传感器的电容器形成在像素区域的垂直上部，而不是在像素区域的外侧，使得不需要用于形成电容器的像素区域的外部区域 ，从而减小芯片尺寸。

公开(公告)号：US20110156113A1

公开(公告)日：2011-06-30

申请号：US12976851

申请日：2010-12-22

申请人： In - Gyun JEON ,  Se - Jung Oh ,  Heui - Gyun Ahn ,  Jun - Ho Won

发明人： In - Gyun JEON ,  Se - Jung Oh ,  Heui - Gyun Ahn ,  Jun - Ho Won

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/14634

摘要： A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.

摘要翻译： 减小芯片尺寸的背面照明图像传感器具有设置在后侧照明图像传感器中的像素区域的垂直上部的电容器，其中光从用户的背面被照射，从而减小了芯片尺寸，并且 背面照明图像传感器的制造方法。 减少芯片尺寸的背面照明图像传感器的电容器形成在像素区域的垂直上部，而不是在像素区域的外侧，使得不需要用于形成电容器的像素区域的外部区域 ，从而减小芯片尺寸。

公开(公告)号：US08816459B2

公开(公告)日：2014-08-26

申请号：US13563620

申请日：2012-07-31

申请人： In-Gyun Jeon ,  Se-Jung Oh ,  Heui-Gyun Ahn ,  Jun-Ho Won

发明人： In-Gyun Jeon ,  Se-Jung Oh ,  Heui-Gyun Ahn ,  Jun-Ho Won

IPC分类号： H01L31/0232 ,  H01L27/146

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687

摘要： An image sensor having a wave guide includes a semiconductor substrate formed with a photodiode and a peripheral circuit region; an anti-reflective layer formed on the semiconductor substrate; an insulation layer formed on the anti-reflective layer; a wiring layer formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode.

摘要翻译： 具有波导的图像传感器包括形成有光电二极管和外围电路区域的半导体基板; 形成在半导体衬底上的抗反射层; 形成在所述抗反射层上的绝缘层; 形成在所述绝缘层上并连接到所述半导体衬底的布线层; 堆叠在所述布线层上的至少一层间电介质; 以及通过穿过形成在光电二极管上的层间电介质和布线层与绝缘层连接的波导。

公开(公告)号：US08420429B2

公开(公告)日：2013-04-16

申请号：US13563655

申请日：2012-07-31

申请人： In Gyun Jeon ,  Se Jung Oh ,  Heui Gyun Ahn ,  Jun Ho Won

发明人： In Gyun Jeon ,  Se Jung Oh ,  Heui Gyun Ahn ,  Jun Ho Won

IPC分类号： H01L21/00

CPC分类号： H01L27/1464 ,  H01L27/14634

摘要： A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.

公开(公告)号：US08399282B2

公开(公告)日：2013-03-19

申请号：US13026963

申请日：2011-02-14

申请人： Heui Gyun Ahn ,  Se Jung Oh ,  In Gyun Jeon ,  Jun Ho Won

发明人： Heui Gyun Ahn ,  Se Jung Oh ,  In Gyun Jeon ,  Jun Ho Won

IPC分类号： H01L21/00

CPC分类号： H01L24/03 ,  H01L21/6835 ,  H01L23/481 ,  H01L24/05 ,  H01L27/1462 ,  H01L27/14636 ,  H01L27/1464 ,  H01L2221/68372 ,  H01L2224/05093 ,  H01L2924/01046 ,  H01L2924/01078

摘要： A method for forming a pad in a wafer with a three-dimensional stacking structure is disclosed. The method includes bonding a device wafer that includes an Si substrate and a handling wafer, thinning a back side of the Si substrate, depositing an anti-reflective layer on the thinned back side of the Si substrate, depositing a back side dielectric layer on the anti-reflective layer, forming vias that pass through the anti-reflective layer and the back side dielectric layer and contact back sides of super contacts which are formed on the Si substrate, and forming a pad on the back side dielectric layer such that the pad is electrically connected to the vias.

摘要翻译： 公开了一种用于在具有三维堆叠结构的晶片中形成焊盘的方法。 该方法包括将包括Si衬底和处理晶片的器件晶片接合，使Si衬底的背面变薄，在Si衬底的减薄的背侧上沉积抗反射层，在其上沉积背面电介质层 抗反射层，形成穿过抗反射层和背面电介质层的通孔，并接触形成在Si衬底上的超级触点的背面，并在背面电介质层上形成焊盘，使得焊盘 电连接到通孔。

公开(公告)号：US20090008737A1

公开(公告)日：2009-01-08

申请号：US12160366

申请日：2006-12-07

申请人： Jun Ho Won ,  Se Jung Oh ,  Jae Young Rim ,  Byoung Su Lee

发明人： Jun Ho Won ,  Se Jung Oh ,  Jae Young Rim ,  Byoung Su Lee

IPC分类号： H01L31/0216 ,  H01L31/18

CPC分类号： H01L27/14685 ,  H01L27/14623 ,  H01L27/1463

摘要： Provided is an image sensor and a method of manufacturing the same. The image sensor includes anti-reflection films which are formed between a plurality of metal wire lines of the lowest metal wiring layer and a semiconductor substrate and between one of the metal wiring layers and another metal wiring layer.The image sensor having the anti-reflection films according to the present invention can reduce color crosstalk and noises in comparison with a conventional image sensor by using the anti-reflection films formed above the surroundings of the photodiodes.

摘要翻译： 提供了一种图像传感器及其制造方法。 图像传感器包括形成在最下层金属布线层的多根金属布线和半导体基板之间以及一个金属布线层和另一个金属布线层之间的防反射膜。 根据本发明的具有防反射膜的图像传感器可以通过使用形成在光电二极管周围的防反射膜与现有的图像传感器相比来减少颜色串扰和噪声。

公开(公告)号：US08368158B2

公开(公告)日：2013-02-05

申请号：US12758646

申请日：2010-04-12

申请人： In-Gyun Jeon ,  Se-Jung Oh ,  Heui-Gyun Ahn ,  Jun-Ho Won

发明人： In-Gyun Jeon ,  Se-Jung Oh ,  Heui-Gyun Ahn ,  Jun-Ho Won

IPC分类号： H01L31/0232

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687

摘要： An image sensor having a wave guide includes a semiconductor substrate formed with a photodiode and a peripheral circuit region; an anti-reflective layer formed on the semiconductor substrate; an insulation layer formed on the anti-reflective layer; a wiring layer formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode.

摘要翻译： 具有波导的图像传感器包括形成有光电二极管和外围电路区域的半导体基板; 形成在半导体衬底上的抗反射层; 形成在所述抗反射层上的绝缘层; 形成在所述绝缘层上并连接到所述半导体衬底的布线层; 堆叠在所述布线层上的至少一层间电介质; 以及通过穿过形成在光电二极管上的层间电介质和布线层与绝缘层连接的波导。

公开(公告)号：US20120301996A1

公开(公告)日：2012-11-29

申请号：US13563655

申请日：2012-07-31

申请人： In-Gyun Jeon ,  Se-Jung Oh ,  Heui-Gyun Ahn ,  Jun-Ho Won

发明人： In-Gyun Jeon ,  Se-Jung Oh ,  Heui-Gyun Ahn ,  Jun-Ho Won

IPC分类号： H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/14634

摘要： A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.

摘要翻译： 减小芯片尺寸的背面照明图像传感器具有设置在后侧照明图像传感器中的像素区域的垂直上部的电容器，其中光从用户的背面被照射，从而减小了芯片尺寸，并且 背面照明图像传感器的制造方法。 减少芯片尺寸的背面照明图像传感器的电容器形成在像素区域的垂直上部，而不是在像素区域的外侧，使得不需要用于形成电容器的像素区域的外部区域 ，从而减小芯片尺寸。

公开(公告)号：US20120295389A1

公开(公告)日：2012-11-22

申请号：US13563620

申请日：2012-07-31

申请人： In-Gyun JEON ,  Se-Jung OH ,  Heui-Gyun AHN ,  Jun-Ho WON

发明人： In-Gyun JEON ,  Se-Jung OH ,  Heui-Gyun AHN ,  Jun-Ho WON

IPC分类号： H01L31/0232

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687

摘要： An image sensor having a wave guide includes a semiconductor substrate formed with a photodiode and a peripheral circuit region; an anti-reflective layer formed on the semiconductor substrate; an insulation layer formed on the anti-reflective layer; a wiring layer formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode.

摘要翻译： 具有波导的图像传感器包括形成有光电二极管和外围电路区域的半导体基板; 形成在半导体衬底上的抗反射层; 形成在所述抗反射层上的绝缘层; 形成在所述绝缘层上并连接到所述半导体衬底的布线层; 堆叠在所述布线层上的至少一层间电介质; 以及通过穿过形成在光电二极管上的层间电介质和布线层与绝缘层连接的波导。

公开(公告)号：US20110133176A1

公开(公告)日：2011-06-09

申请号：US12923089

申请日：2010-09-01

申请人： Jae-cheol Lee ,  Chang-seung Lee ,  Jae-gwan Chung ,  Eun-ha Lee ,  Anass Benayad ,  Sang-wook Kim ,  Se-jung Oh

发明人： Jae-cheol Lee ,  Chang-seung Lee ,  Jae-gwan Chung ,  Eun-ha Lee ,  Anass Benayad ,  Sang-wook Kim ,  Se-jung Oh

IPC分类号： H01L29/12

CPC分类号： H01L29/78606 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： Transistors and electronic apparatuses including the same are provided, the transistors include a channel layer on a substrate. The channel layer includes a zinc (Zn)-containing oxide. The transistors include a source and a drain, respectively, contacting opposing ends of the channel layer, a gate corresponding to the channel layer, and a gate insulating layer insulating the channel layer from the gate. The channel layer has a first surface adjacent to the substrate, a second surface facing the first surface, and a channel layer-protection portion on the second surface. The channel layer-protection portion includes a fluoride material.

摘要翻译： 提供了包括它们的晶体管和电子设备，晶体管包括在衬底上的沟道层。 沟道层包括含锌（Zn）的氧化物。 晶体管分别包括与沟道层的相对端接触的源极和漏极，对应于沟道层的栅极以及将沟道层与栅极绝缘的栅极绝缘层。 沟道层具有与基板相邻的第一表面，与第一表面相对的第二表面和在第二表面上的沟道层保护部分。 沟道层保护部分包括氟化物材料。