公开(公告)号：US20210138590A1

公开(公告)日：2021-05-13

申请号：US17134881

申请日：2020-12-28

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Hirohiko WATANABE ,  Shunsuke SAITO ,  Takeshi YOKOYAMA

IPC: B23K35/26 ,  B23K1/00 ,  C23C18/32 ,  C23C18/16 ,  B23K35/30

Abstract: The present invention provides a highly reliable solder joint, the solder joint including a solder joint layer having a melted solder material containing Sn as a main component and further containing Ag and/or Sb and/or Cu; and a joined body including a Ni—P—Cu plating layer on a surface in contact with the solder joint layer, wherein the Ni—P—Cu plating layer contains Ni as a main component and contains 0.5% by mass or greater and 8% by mass or less of Cu and 3% by mass or greater and 10% by mass or less of P, the Ni—P—Cu plating layer has a microcrystalline layer at an interface with the solder joint layer, and the microcrystalline layer includes a phase containing microcrystals of a NiCuP ternary alloy, a phase containing microcrystals of (Ni,Cu)3P, and a phase containing microcrystals of Ni3P.

公开(公告)号：US20200303337A1

公开(公告)日：2020-09-24

申请号：US16893707

申请日：2020-06-05

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Hirohiko WATANABE ,  Shunsuke SAITO ,  Yoshitaka NISHIMURA ,  Fumihiko MOMOSE

IPC: H01L23/00 ,  C22C13/02 ,  H01L23/053 ,  B23K35/02 ,  B23K35/26

Abstract: A lead-free solder has a heat resistance temperature which is high and a thermal conductive property which is not changed in a high temperature range. A semiconductor device includes a solder material containing more than 5.0% by mass and 10.0% by mass or less of Sb and 2.0 to 4.0% by mass of Ag, and the remainder consisting of Sn and inevitable impurities. A bonding layer including the solder material, is formed between a semiconductor element and a substrate electrode or a lead frame.

公开(公告)号：US20190193210A1

公开(公告)日：2019-06-27

申请号：US16290401

申请日：2019-03-01

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Hirohiko WATANABE ,  Shunsuke Saito ,  Yoshihiro Kodaira

IPC: B23K35/02 ,  B23K1/20 ,  B23K35/26 ,  C22C13/02 ,  H01L21/48 ,  H01L23/00

CPC classification number: B23K35/0222 ,  B23K1/0016 ,  B23K1/203 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/26 ,  B23K35/262 ,  B23K35/362 ,  B23K2101/42 ,  C22C13/02 ,  H01L21/4853 ,  H01L24/00 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/29211 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/19107 ,  H05K3/3463 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A solder material having a good thermal-cycle fatigue property and wettability. The solder material contains not less than 5.0% by mass and not more than 8.0% by mass Sb, not less than 3.0% by mass and not more than 5.0% by mass Ag, and the balance of Sn and incidental impurities. Also, a semiconductor device may include a joining layer between a semiconductor element and a substrate electrode or a lead frame, the joining layer being obtained by melting this solder material.

公开(公告)号：US20240075559A1

公开(公告)日：2024-03-07

申请号：US18506384

申请日：2023-11-10

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Hirohiko WATANABE ,  Shunsuke SAITO ,  Yoshihiro KODAIRA

IPC: B23K35/02 ,  B23K1/00 ,  B23K1/20 ,  B23K35/26 ,  C22C13/02 ,  H01L21/48 ,  H01L23/00

CPC classification number: B23K35/0222 ,  B23K1/0016 ,  B23K1/203 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/26 ,  B23K35/262 ,  C22C13/02 ,  H01L21/4853 ,  H01L24/00 ,  H01L24/29 ,  H01L24/48 ,  H05K3/3463

Abstract: A solder material having a good thermal-cycle fatigue property and wettability. The solder material contains not less than 6.0% by mass and not more than 8.0% by mass Sb, not less than 3.0% by mass and not more than 5.0% by mass Ag, and the balance of Sn and incidental impurities. Also, a semiconductor device may include a joining layer between a semiconductor element and a substrate electrode or a lead frame, the joining layer being obtained by melting this solder material.

公开(公告)号：US20160332262A1

公开(公告)日：2016-11-17

申请号：US14909929

申请日：2015-01-28

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Ikuo SHOHJI ,  Tatsuya GANBE ,  Hirohiko WATANABE

IPC: B23K35/362 ,  B23K35/26 ,  B23K35/36

CPC classification number: B23K35/362 ,  B23K35/262 ,  B23K35/3612 ,  B23K35/3613 ,  B23K35/3618 ,  B23K2101/36 ,  B23K2101/42 ,  C22C13/00 ,  H01L2224/11 ,  H05K3/3489 ,  H05K2203/041

Abstract: Provided is flux composition for a solder, which thermally cures so as to cover and reinforce a solder ball during solder ball bonding.Employed is a flux for soldering, containing an epoxy resin, an organocarboxylic acid containing at least 0.1-40 mass % of a dicarboxylic acid having molecular weight of 180 or less, and a thixotropy-imparting agent, the epoxy resin and the organocarboxylic acid being blended such that there is 0.8-2.0 eq of the carboxyl groups of the organocarboxylic acid per 1.0 eq of the epoxy groups of the epoxy resin, and the epoxy resin, the organocarboxylic acid, and the thixotropy-imparting agent being contained in a total amount of 70 mass % or more relative to the total amount of the flux.

Abstract translation: 使用含有环氧树脂，含有至少0.1〜40质量％的分子量为180以下的二羧酸的有机羧酸和触变性赋予剂的环氧树脂和有机羧酸为焊剂用焊剂 共混，使得环氧树脂的环氧基的每1.0当量的有机羧酸的羧基为0.8-2.0当量，环氧树脂，有机羧酸和触变性赋予剂的总量为 相对于助熔剂的总量为70质量％以上。

公开(公告)号：US20240109157A1

公开(公告)日：2024-04-04

申请号：US18535342

申请日：2023-12-11

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Hirohiko WATANABE ,  Shunsuke SAITO ,  Takeshi YOKOYAMA

IPC: B23K35/26 ,  B23K1/00 ,  B23K35/30 ,  C23C18/16 ,  C23C18/32

CPC classification number: B23K35/262 ,  B23K1/0016 ,  B23K35/302 ,  C23C18/1637 ,  C23C18/32 ,  B23K2103/12

Abstract: In an example, use of a solder joint may include a solder joint layer having a melted solder material containing Sn as a main component and further containing Ag and/or Sb and/or Cu; and a joined body including a Ni—P—Cu plating layer on a surface of the joined body in contact with the solder joint layer. The Ni—P—Cu plating layer may contain Ni as a main component and may contain 0.5% by mass or greater and 8% by mass or less of Cu and 3% by mass or greater and 10% by mass or less of P, and the Ni—P—Cu plating layer may have a microcrystalline layer at an interface with the solder joint layer.

公开(公告)号：US20170012018A1

公开(公告)日：2017-01-12

申请号：US15276156

申请日：2016-09-26

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Hirohiko WATANABE ,  Shunsuke SAITO ,  Masahiro ONO ,  Takashi WATANABE ,  Shinji SANO ,  Kazunaga ONISHI

IPC: H01L23/00 ,  B23K35/26 ,  H01L21/52 ,  B23K1/00

CPC classification number: H01L24/48 ,  B23K1/0016 ,  B23K1/008 ,  B23K1/19 ,  B23K1/203 ,  B23K35/26 ,  B23K35/262 ,  B23K2101/42 ,  C22C13/02 ,  H01L21/52 ,  H01L23/40 ,  H01L23/4827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/49 ,  H01L24/81 ,  H01L25/07 ,  H01L25/18 ,  H01L2224/0345 ,  H01L2224/04026 ,  H01L2224/05639 ,  H01L2224/06181 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/32227 ,  H01L2224/32507 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48245 ,  H01L2224/48506 ,  H01L2224/4852 ,  H01L2224/49109 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85359 ,  H01L2224/85805 ,  H01L2224/85825 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H05K3/3463 ,  H05K2201/10166 ,  H01L2224/45099 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/01026 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/0103 ,  H01L2924/01078 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01051 ,  H01L2224/85399 ,  H01L2224/05599

Abstract: In a soldering method for Ag-containing lead-free solders to be soldered to an Ag-containing member, void generation is prevented and solder wettability is improved. The soldering method for Ag-containing lead-free solders of the present invention is a soldering method for Ag-containing lead-free solders includes a first step of bringing a lead-free solder having a composition that contains Ag that a relation between a concentration C (mass %) of Ag contained in an Sn—Ag-based lead-free solder before soldering of a mass M(g) and an elution amount B(g) of Ag contained in the Ag-containing member becomes 1.0 mass %≦(M×C+B)×100/(M+B)≦4.6 mass % and that the balance consists of Sn and unavoidable impurities into contact with the Ag-containing member, a second step of heating and melting the lead-free solder, and a third step of cooling the lead-free solder.

Abstract translation: 在将含铂的无铅焊料焊接到含Ag构件的焊接方法中，防止产生空隙并提高焊料润湿性。 本发明的含Ag无铅焊料的焊接方法是含Ag无铅焊料的焊接方法，其包括使具有含Ag组成的无铅焊料成为浓度 含Ag组分中所含的质量M（g）和质量M（g）的Ag和溶出量B（g）之前的Sn-Ag类无铅焊料中所含的Ag的C（质量％）为1.0质量％ （M×C + B）×100 /（M + B）≤4.4质量％，余量由Sn和不可避免的杂质构成与含Ag构件接触，第二步是对无铅焊料进行加热熔融 ，以及冷却无铅焊料的第三步骤。

公开(公告)号：US20250041977A1

公开(公告)日：2025-02-06

申请号：US18922811

申请日：2024-10-22

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Kohei MITSUI ,  Hirohiko WATANABE ,  Shunsuke SAITO ,  Fumihiko MOMOSE

IPC: B23K35/26 ,  B23K101/40 ,  C22C13/00 ,  H01L23/00

Abstract: Solder material with excellent elongation at break in high-temperature environments. Provided are: a solder material containing 5.0% by mass or more and 10.0% by mass or less of Sb, 2.0% by mass or more and 6.0% by mass or less of Ag, 0.1% by mass or more and 0.5% by mass or less of Ni, 3.0% by mass or more and 8.0% by mass or less of Cu, and the remainder consisting of Sn and inevitable impurities; a solder bonding portion including a bonding layer in which the solder material is melted; and a semiconductor device including the bonding portion.

公开(公告)号：US20210407953A1

公开(公告)日：2021-12-30

申请号：US17474249

申请日：2021-09-14

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Hirohiko WATANABE ,  Shunsuke SAITO ,  Yoshitaka NISHIMURA ,  Fumihiko MOMOSE

IPC: H01L23/00 ,  C22C13/02 ,  H01L23/053 ,  B23K35/02 ,  B23K35/26

Abstract: A lead-free solder has a heat resistance temperature which is high and a thermal conductive property which is not changed in a high temperature range. A semiconductor device includes a solder material containing more than 5.0% by mass and 10.0% by mass or less of Sb and 2.0 to 4.0% by mass of Ag, an element selected from the group consisting of: more than 0 and 1.0% by mass or less of Si, more than 0 and 0.1% by mass or less of V, 0.001 to 0.1% by mass of Ge, 0.001 to 0.1% by mass of P, and more than 0 and 1.2% by mass or less of Cu, and the remainder consisting of Sn and inevitable impurities. A bonding layer including the solder material, is formed between a semiconductor element and a substrate electrode or a lead frame.

公开(公告)号：US20180277506A1

公开(公告)日：2018-09-27

申请号：US15994797

申请日：2018-05-31

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Hirohiko WATANABE ,  Shunsuke SAITO ,  Yoshihiro KODAIRA

IPC: H01L23/00 ,  B23K35/26 ,  C22C13/02 ,  H01L23/373

CPC classification number: H01L24/29 ,  B23K35/0238 ,  B23K35/26 ,  B23K35/262 ,  B23K35/302 ,  B23K2101/40 ,  B23K2103/12 ,  C22C13/02 ,  H01L21/52 ,  H01L23/3735 ,  H01L24/73 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29117 ,  H01L2224/2912 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/29169 ,  H01L2224/29173 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/01015 ,  H01L2924/01032 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/35121 ,  H05K3/3463 ,  H05K2201/10166 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: The present invention suppresses fracture at an interface between different materials, and provides a solder joining which includes: a solder joining layer 10 having a melted solder material, containing Sb at more than 5.0% by mass and 10.0% by mass or less, Ag at 2.0 to 4.0% by mass, Ni at more than 0 and 1.0% by mass or less, and a balance made up of Sn and inevitable impurities; and joining members 11 and 123 at least one of which is a Cu or Cu-alloy member 123, in which the solder joining layer includes a first structure 1 containing (Cu, Ni)6(Sn, Sb)5 and a second structure 2 containing (Ni, Cu)3(Sn, Sb)X (in the formula, X is 1, 2, or 4) at an interface with the Cu or Cu-alloy member 123, and an electronic device and a semiconductor device including the solder joining.