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公开(公告)号:US20110107595A1
公开(公告)日:2011-05-12
申请号:US13008928
申请日:2011-01-19
IPC分类号: H01L21/58
CPC分类号: H01L24/85 , H01L24/45 , H01L24/48 , H01L2224/05611 , H01L2224/37147 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45611 , H01L2224/45647 , H01L2224/48091 , H01L2224/48227 , H01L2224/4847 , H01L2224/48475 , H01L2224/48611 , H01L2224/48711 , H01L2224/48799 , H01L2224/85051 , H01L2224/85205 , H01L2224/85411 , H01L2224/85815 , H01L2224/85825 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/15747 , H01L2924/19042 , H01L2924/20751 , Y10T29/49144 , H01L2924/00014 , H01L2924/00 , H01L2224/48811 , H01L2924/013 , H01L2924/01006
摘要: A method of electrically interconnecting a semiconductor chip to another electronic device including providing a carrier including contact pins and a chip attached to the carrier, the chip having a copper contact pad that faces away from the carrier, extending a copper electrical connector between the contact pins and the contact pad, and diffusion soldering the copper electrical connector to the active area with a solder material including tin to form a solder connection including a contiguous bronze coating disposed between and in direct contact with both the copper electrical connector and the contact pad.
摘要翻译: 一种将半导体芯片电连接到另一个电子设备的方法,包括提供包括接触引脚和附接到载体的芯片的载体,所述芯片具有背离载体的铜接触焊盘,在接触引脚之间延伸铜电连接器 以及接触焊盘,并且使用包括锡的焊料材料将铜电连接器扩散焊接到有源区域,以形成包括布置在铜电连接器和接触焊盘两者之间并且与铜电连接器和接触焊盘两者直接接触的连续青铜镀层的焊料连接。
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公开(公告)号:US20170012018A1
公开(公告)日:2017-01-12
申请号:US15276156
申请日:2016-09-26
发明人: Hirohiko WATANABE , Shunsuke SAITO , Masahiro ONO , Takashi WATANABE , Shinji SANO , Kazunaga ONISHI
CPC分类号: H01L24/48 , B23K1/0016 , B23K1/008 , B23K1/19 , B23K1/203 , B23K35/26 , B23K35/262 , B23K2101/42 , C22C13/02 , H01L21/52 , H01L23/40 , H01L23/4827 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/49 , H01L24/81 , H01L25/07 , H01L25/18 , H01L2224/0345 , H01L2224/04026 , H01L2224/05639 , H01L2224/06181 , H01L2224/291 , H01L2224/29111 , H01L2224/32227 , H01L2224/32507 , H01L2224/33181 , H01L2224/48091 , H01L2224/48145 , H01L2224/48245 , H01L2224/48506 , H01L2224/4852 , H01L2224/49109 , H01L2224/73215 , H01L2224/73265 , H01L2224/85359 , H01L2224/85805 , H01L2224/85825 , H01L2924/00014 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H05K3/3463 , H05K2201/10166 , H01L2224/45099 , H01L2924/014 , H01L2924/01047 , H01L2924/00012 , H01L2924/01029 , H01L2924/01026 , H01L2924/01024 , H01L2924/01027 , H01L2924/0103 , H01L2924/01078 , H01L2924/01022 , H01L2924/01028 , H01L2924/01051 , H01L2224/85399 , H01L2224/05599
摘要: In a soldering method for Ag-containing lead-free solders to be soldered to an Ag-containing member, void generation is prevented and solder wettability is improved. The soldering method for Ag-containing lead-free solders of the present invention is a soldering method for Ag-containing lead-free solders includes a first step of bringing a lead-free solder having a composition that contains Ag that a relation between a concentration C (mass %) of Ag contained in an Sn—Ag-based lead-free solder before soldering of a mass M(g) and an elution amount B(g) of Ag contained in the Ag-containing member becomes 1.0 mass %≦(M×C+B)×100/(M+B)≦4.6 mass % and that the balance consists of Sn and unavoidable impurities into contact with the Ag-containing member, a second step of heating and melting the lead-free solder, and a third step of cooling the lead-free solder.
摘要翻译: 在将含铂的无铅焊料焊接到含Ag构件的焊接方法中,防止产生空隙并提高焊料润湿性。 本发明的含Ag无铅焊料的焊接方法是含Ag无铅焊料的焊接方法,其包括使具有含Ag组成的无铅焊料成为浓度 含Ag组分中所含的质量M(g)和质量M(g)的Ag和溶出量B(g)之前的Sn-Ag类无铅焊料中所含的Ag的C(质量%)为1.0质量% (M×C + B)×100 /(M + B)≤4.4质量%,余量由Sn和不可避免的杂质构成与含Ag构件接触,第二步是对无铅焊料进行加热熔融 ,以及冷却无铅焊料的第三步骤。
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公开(公告)号:US20080315423A1
公开(公告)日:2008-12-25
申请号:US11767769
申请日:2007-06-25
CPC分类号: H01L24/85 , H01L24/45 , H01L24/48 , H01L2224/05611 , H01L2224/37147 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45611 , H01L2224/45647 , H01L2224/48091 , H01L2224/48227 , H01L2224/4847 , H01L2224/48475 , H01L2224/48611 , H01L2224/48711 , H01L2224/48799 , H01L2224/85051 , H01L2224/85205 , H01L2224/85411 , H01L2224/85815 , H01L2224/85825 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/15747 , H01L2924/19042 , H01L2924/20751 , Y10T29/49144 , H01L2924/00014 , H01L2924/00 , H01L2224/48811 , H01L2924/013 , H01L2924/01006
摘要: A semiconductor device includes a carrier, a chip including a first face having a contact area, where the chip is attached to the carrier such that the contact area faces away from the carrier, a copper connector configured for attachment to the contact area, and a solder material configured to couple the copper connector to the contact area.
摘要翻译: 一种半导体器件,包括载体,芯片,其包括具有接触区域的第一面,其中所述芯片附接到所述载体,使得所述接触区域背离所述载体,构造成附接到所述接触区域的铜连接器,以及 焊料材料被配置为将铜连接器耦合到接触区域。
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公开(公告)号:US11908830B2
公开(公告)日:2024-02-20
申请号:US17390101
申请日:2021-07-30
IPC分类号: H01L23/00
CPC分类号: H01L24/85 , H01L24/45 , H01L24/48 , H01L2224/45033 , H01L2224/48472 , H01L2224/85205 , H01L2224/85214 , H01L2224/85825
摘要: A method for fabricating a semiconductor device includes providing a semiconductor die, arranging an electrical connector over the semiconductor die, the electrical connector including a conductive core, an absorbing feature arranged on a first side of the conductive core, and a solder layer arranged on a second side of the conductive core, opposite the first side and facing the semiconductor die, and soldering the electrical connector onto the semiconductor die by heating the solder layer with a laser, wherein the laser irradiates the absorbing feature and absorbed energy is transferred from the absorbing feature through the conductive core to the solder layer.
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公开(公告)号:US07911061B2
公开(公告)日:2011-03-22
申请号:US11767769
申请日:2007-06-25
CPC分类号: H01L24/85 , H01L24/45 , H01L24/48 , H01L2224/05611 , H01L2224/37147 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45611 , H01L2224/45647 , H01L2224/48091 , H01L2224/48227 , H01L2224/4847 , H01L2224/48475 , H01L2224/48611 , H01L2224/48711 , H01L2224/48799 , H01L2224/85051 , H01L2224/85205 , H01L2224/85411 , H01L2224/85815 , H01L2224/85825 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/15747 , H01L2924/19042 , H01L2924/20751 , Y10T29/49144 , H01L2924/00014 , H01L2924/00 , H01L2224/48811 , H01L2924/013 , H01L2924/01006
摘要: A semiconductor device includes a carrier, a chip including a first face having a contact area, where the chip is attached to the carrier such that the contact area faces away from the carrier, a copper connector configured for attachment to the contact area, and a solder material configured to couple the copper connector to the contact area.
摘要翻译: 半导体器件包括载体,芯片,其包括具有接触区域的第一面,其中所述芯片附接到所述载体,使得所述接触区域背离所述载体,所述铜连接器被配置为附接到所述接触区域,以及 焊料材料被配置为将铜连接器耦合到接触区域。
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公开(公告)号:US12027490B2
公开(公告)日:2024-07-02
申请号:US17390101
申请日:2021-07-30
IPC分类号: H01L23/00
CPC分类号: H01L24/85 , H01L24/45 , H01L24/48 , H01L2224/45033 , H01L2224/48472 , H01L2224/85205 , H01L2224/85214 , H01L2224/85825
摘要: A method for fabricating a semiconductor device includes providing a semiconductor die, arranging an electrical connector over the semiconductor die, the electrical connector including a conductive core, an absorbing feature arranged on a first side of the conductive core, and a solder layer arranged on a second side of the conductive core, opposite the first side and facing the semiconductor die, and soldering the electrical connector onto the semiconductor die by heating the solder layer with a laser, wherein the laser irradiates the absorbing feature and absorbed energy is transferred from the absorbing feature through the conductive core to the solder layer.
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公开(公告)号:US10002845B2
公开(公告)日:2018-06-19
申请号:US15276156
申请日:2016-09-26
发明人: Hirohiko Watanabe , Shunsuke Saito , Masahiro Ono , Takashi Watanabe , Shinji Sano , Kazunaga Onishi
IPC分类号: H01L21/00 , H01L23/00 , B23K1/19 , B23K35/26 , C22C13/02 , H01L23/40 , H01L21/52 , H01L25/07 , H01L25/18 , B23K1/00 , B23K1/008 , B23K1/20 , H05K3/34 , H01L23/482 , B23K101/42
CPC分类号: H01L24/48 , B23K1/0016 , B23K1/008 , B23K1/19 , B23K1/203 , B23K35/26 , B23K35/262 , B23K2101/42 , C22C13/02 , H01L21/52 , H01L23/40 , H01L23/4827 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/49 , H01L24/81 , H01L25/07 , H01L25/18 , H01L2224/0345 , H01L2224/04026 , H01L2224/05639 , H01L2224/06181 , H01L2224/291 , H01L2224/29111 , H01L2224/32227 , H01L2224/32507 , H01L2224/33181 , H01L2224/48091 , H01L2224/48145 , H01L2224/48245 , H01L2224/48506 , H01L2224/4852 , H01L2224/49109 , H01L2224/73215 , H01L2224/73265 , H01L2224/85359 , H01L2224/85805 , H01L2224/85825 , H01L2924/00014 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/13055 , H05K3/3463 , H05K2201/10166 , H01L2224/45099 , H01L2924/014 , H01L2924/01047 , H01L2924/00012 , H01L2924/01029 , H01L2924/01026 , H01L2924/01024 , H01L2924/01027 , H01L2924/0103 , H01L2924/01078 , H01L2924/01022 , H01L2924/01028 , H01L2924/01051 , H01L2224/85399 , H01L2224/05599 , H01L2924/00
摘要: In a soldering method for Ag-containing lead-free solders to be soldered to an Ag-containing member, void generation is prevented and solder wettability is improved. The soldering method for Ag-containing lead-free solders of the present invention is a soldering method for Ag-containing lead-free solders includes a first step of bringing a lead-free solder having a composition that contains Ag that a relation between a concentration C (mass %) of Ag contained in an Sn—Ag-based lead-free solder before soldering of a mass M(g) and an elution amount B(g) of Ag contained in the Ag-containing member becomes 1.0 mass %≤(M×C+B)×100/(M+B)≤4.6 mass % and that the balance consists of Sn and unavoidable impurities into contact with the Ag-containing member, a second step of heating and melting the lead-free solder, and a third step of cooling the lead-free solder.
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公开(公告)号:US08156643B2
公开(公告)日:2012-04-17
申请号:US13008928
申请日:2011-01-19
IPC分类号: H01L21/58
CPC分类号: H01L24/85 , H01L24/45 , H01L24/48 , H01L2224/05611 , H01L2224/37147 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45611 , H01L2224/45647 , H01L2224/48091 , H01L2224/48227 , H01L2224/4847 , H01L2224/48475 , H01L2224/48611 , H01L2224/48711 , H01L2224/48799 , H01L2224/85051 , H01L2224/85205 , H01L2224/85411 , H01L2224/85815 , H01L2224/85825 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/15747 , H01L2924/19042 , H01L2924/20751 , Y10T29/49144 , H01L2924/00014 , H01L2924/00 , H01L2224/48811 , H01L2924/013 , H01L2924/01006
摘要: A method of electrically interconnecting a semiconductor chip to another electronic device including providing a carrier including contact pins and a chip attached to the carrier, the chip having a copper contact pad that faces away from the carrier, extending a copper electrical connector between the contact pins and the contact pad, and diffusion soldering the copper electrical connector to the active area with a solder material including tin to form a solder connection including a contiguous bronze coating disposed between and in direct contact with both the copper electrical connector and the contact pad.
摘要翻译: 一种将半导体芯片电连接到另一个电子设备的方法,包括提供包括接触引脚和附接到载体的芯片的载体,所述芯片具有背离载体的铜接触焊盘,在接触引脚之间延伸铜电连接器 以及接触焊盘,并且使用包括锡的焊料材料将铜电连接器扩散焊接到有源区域,以形成包括布置在铜电连接器和接触焊盘两者之间并且与铜电连接器和接触焊盘两者直接接触的连续青铜镀层的焊料连接。
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