公开(公告)号：US11985899B2

公开(公告)日：2024-05-14

申请号：US17539422

申请日：2021-12-01

Applicant: FUJIFILM Corporation

Inventor： Kenichi Umeda ,  Yukihiro Okuno ,  Takami Arakawa

IPC: H10N30/079 ,  H10N30/00

CPC classification number: H10N30/10516 ,  H10N30/079

Abstract: A piezoelectric element includes, in sequence, a substrate, a lower electrode layer, a growth control layer, a piezoelectric layer including a perovskite-type oxide containing lead as a main component of an A site, and an upper electrode layer. The growth control layer includes a metal oxide represented by MdN1−dOe, where M is one or more metal elements capable of substituting for the A site of the perovskite-type oxide. When the electronegativity of M is X, 1.41X−1.05≤d≤A1·exp(−X/t1)+y0, where A1=1.68×1012, t1=0.0306, and y0=0.59958. The perovskite-type oxide is represented by (Pba1αa2)(Zrb1Tib2βb3)Oc, where 0.5

公开(公告)号：US11029449B2

公开(公告)日：2021-06-08

申请号：US16269271

申请日：2019-02-06

Applicant: FUJIFILM Corporation

Inventor： Kenichi Umeda ,  Seigo Nakamura ,  Yuichiro Itai ,  Hideki Yasuda

IPC: G02B1/115 ,  G02B15/20 ,  C23C14/06 ,  B32B15/04 ,  B32B9/00 ,  G02B15/14

Abstract: An antireflection film is formed by laminating an interlayer, a silver-containing metal layer containing silver, and a dielectric layer in this order from the substrate, an anchor region including an oxide of an anchor metal is provided between the silver-containing metal layer and the interlayer, a cap region including an oxide of the anchor metal included in the anchor region is provided between the silver-containing metal layer and the dielectric layer, a crystal grain size obtained by X-ray diffraction measurement in the silver-containing metal layer is less than 6.8 nm, and the anchor metal has a surface energy less than a surface energy of silver and greater than a surface energy of a layer of the interlayer closest to the silver-containing metal layer.

公开(公告)号：US11747520B2

公开(公告)日：2023-09-05

申请号：US16929100

申请日：2020-07-14

Applicant: FUJIFILM CORPORATION

Inventor： Kenichi Umeda ,  Seigo Nakamura ,  Tatsuya Yoshihiro ,  Yuichiro Itai

IPC: G02B1/115 ,  G02B1/116 ,  G02B5/28 ,  G02F1/1335

CPC classification number: G02B1/115 ,  G02B1/116 ,  G02B5/285 ,  G02F1/133502 ,  G02F2201/38

Abstract: The optical thin film is provided on a substrate and includes, in order, from the substrate side, an interlayer, a silver-containing metal layer, and a dielectric layer, in which an anchor region including an oxide of an anchor metal is provided in an interface region of the silver-containing metal layer on a side close to the interlayer, a cap region including an oxide of the anchor metal is provided in an interface region of the silver-containing metal layer on a side close to the dielectric layer, a film thickness of the silver-containing metal layer is 6 nm or less, the silver-containing metal layer contains a high standard electrode potential metal, and a peak position of a concentration distribution of the high standard electrode potential metal in a film thickness direction of the silver-containing metal layer is positioned closer to the interlayer than a peak position of a silver concentration distribution.

公开(公告)号：US11194078B2

公开(公告)日：2021-12-07

申请号：US16288768

申请日：2019-02-28

Applicant: FUJIFILM Corporation

Inventor： Seigo Nakamura ,  Kenichi Umeda ,  Yuichiro Itai ,  Shinichiro Sonoda

IPC: G02B1/111 ,  G02B1/113 ,  G02B1/18 ,  B32B15/04 ,  B32B7/02 ,  B32B9/00 ,  B32B27/00 ,  G02B15/14

Abstract: Provided is an antireflection film that is formed by laminating an interlayer, a silver-containing metal layer containing silver, and a dielectric layer, in this order, on a substrate, in which the interlayer is a multilayer film having two or more layers, in which a layer of high refractive index having a relatively high refractive index and a layer of low refractive index having a relatively low refractive index are alternately laminated, and the dielectric layer has a surface to be exposed to air and is a multilayer film having two or more layers including an oxide layer and a fluorocarbon layer which is a self-assembled film that is formed by a silane coupling reaction to the oxide layer in this order.

公开(公告)号：US11751478B2

公开(公告)日：2023-09-05

申请号：US16841703

申请日：2020-04-07

Applicant: FUJIFILM CORPORATION

Inventor： Takamichi Fujii ,  Kenichi Umeda

IPC: H01L41/113 ,  H02N2/18 ,  H10N30/088 ,  H10N30/07 ,  H10N30/30 ,  H10N30/88 ,  H10N30/87

CPC classification number: H10N30/088 ,  H02N2/18 ,  H10N30/07 ,  H10N30/30 ,  H10N30/872 ,  H10N30/88

Abstract: A method of manufacturing a power generation element includes a first step of disposing a support unit that supports a vibration unit in one end portion of the vibration unit in one direction, and disposing a weight unit in the other end portion of the vibration unit in the one direction in a substrate including the vibration unit capable of vibrating, a second step of disposing a piezoelectric unit that generates power due to vibration in a portion of the vibration unit on an opposite side from the support unit side in a thickness direction of the substrate after the support unit and the weight unit are disposed in the vibration unit, and a third step of extracting a power generation element from the substrate by cutting an outer edge of the vibration unit in the thickness direction of the substrate after the piezoelectric unit is disposed in the vibration unit.

公开(公告)号：US10270049B2

公开(公告)日：2019-04-23

申请号：US15953015

申请日：2018-04-13

Applicant: FUJIFILM Corporation

Inventor： Kenichi Umeda

IPC: H01L21/28 ,  H01L51/00 ,  H01L51/05 ,  H01L51/10 ,  H01L21/288 ,  H01L29/417 ,  H01L29/786

Abstract: An object of the present invention is to provide an electrode material for an organic semiconductor device with which an excellent electrode pattern can be formed, a method for forming an electrode pattern, and an organic thin-film transistor.An electrode material for an organic semiconductor device of the present invention includes inorganic nanoparticles, an organic π-conjugated ligand, water, 0.0005% to 15% by mass of a fluorine-based surfactant, and a surface tension adjuster of which a dielectric constant is 20 to 30, in which the organic π-conjugated ligand is a ligand having at least one hydrophilic substituent.

公开(公告)号：US10319928B2

公开(公告)日：2019-06-11

申请号：US15673756

申请日：2017-08-10

Applicant: FUJIFILM Corporation

Inventor： Kenichi Umeda ,  Keisuke Ushirogata

IPC: H01L51/10 ,  C07D487/22 ,  H01L21/288 ,  H01L29/417 ,  H01L29/786 ,  H01L51/00

Abstract: An object of the present invention is to provide an electrode material for an organic semiconductor device which maintains excellent conductivity and of which contact properties with an organic semiconductor becomes favorable. The electrode material for an organic semiconductor device of the present invention contains inorganic nanoparticles and an organic π-conjugated ligand, in which the organic π-conjugated ligand is a ligand having at least one electron-withdrawing substituent.

公开(公告)号：US09406809B2

公开(公告)日：2016-08-02

申请号：US14024881

申请日：2013-09-12

Applicant: FUJIFILM Corporation

Inventor： Kenichi Umeda ,  Takamichi Fujii

IPC: H01L29/86 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There is provided a field effect transistor having, on a substrate, at least a gate electrode, a gate insulating film, an active layer mainly containing an oxide semiconductor that contains at least one of In, Ga or Zn, a source electrode, and a drain electrode, the field effect transistor including: a heat diffusion layer, wherein, given that a thermal conductivity of the substrate is Nsub (W/mK), a thermal conductivity of the heat diffusion layer is Nkaku (W/mK), a film thickness of the heat diffusion layer is T (mm), a planar opening ratio of the heat diffusion layer is R (0≦R≦1), and S=T×R, the thermal conductivity Nsub of the substrate satisfies the condition Nsub 3.0×S^(−0.97×e^(−1.2×Nsub)) and Nkaku≧Nsub.

Abstract translation: 提供一种场效应晶体管，其在基板上至少具有栅电极，栅极绝缘膜，主要含有包含In，Ga或Zn中的至少一种的氧化物半导体的有源层，源电极和 漏电极，所述场效应晶体管包括：热扩散层，其中，假设所述衬底的热导率为Nsub（W / m·K），所述热扩散层的热导率为Nkaku（W / m·K） 热扩散层的厚度为T（mm），热扩散层的平面开口率为R（0≤R≤1），S = T×R，基板的热传导率Nsub满足条件Nsub < 1.8，热扩散层的导热率Nkaku满足条件Nkaku> 3.0×S ^（ - 0.97×e ^（ - 1.2×Nsub））和Nkaku≥Nsub。

公开(公告)号：US11422290B2

公开(公告)日：2022-08-23

申请号：US16813703

申请日：2020-03-09

Applicant: FUJIFILM Corporation

Inventor： Seigo Nakamura ,  Tatsuya Yoshihiro ,  Kenichi Umeda ,  Yuichiro Itai

IPC: G02B1/115 ,  C03C17/34 ,  C03C17/36 ,  G02B1/04

Abstract: An antireflection film is provided on a substrate and includes an interlayer, a silver-containing metal layer containing silver, and a dielectric layer, which are laminated in this order on a side of a substrate, in which the interlayer is a multilayer film having at least two layers in which a layer of high refractive index having a relatively high refractive index and a layer of lower refractive index having a relatively low refractive index are alternately laminated, the dielectric layer has a surface exposed to air, and the dielectric layer is a multilayer film including a silicon-containing oxide layer, a magnesium fluoride layer, and an adhesion layer provided between the silicon-containing oxide layer and the magnesium fluoride layer and configured to increase adhesiveness between the silicon-containing oxide layer and the magnesium fluoride layer.

公开(公告)号：US11422288B2

公开(公告)日：2022-08-23

申请号：US16799782

申请日：2020-02-24

Applicant: FUJIFILM Corporation

Inventor： Kenichi Umeda ,  Yuichiro Itai ,  Seigo Nakamura

IPC: G02B1/10 ,  C23C14/20 ,  C23C14/34 ,  C23C16/34 ,  G02B1/111 ,  C23C14/02 ,  B32B7/04 ,  B32B9/00 ,  B32B15/04 ,  C23C14/08

Abstract: In a laminated film, a resin substrate, an organic/inorganic multilayer, and a silver-containing metal layer having a thickness of 20 nm or less are laminated in this order, an anchor metal diffusion control layer having a Hamaker constant of 7.3×10−20 J or more is provided on the surface of the inorganic layer, an anchor region containing an oxide of an anchor metal having a surface energy which has a smaller difference with a surface energy of the silver-containing metal layer than a surface energy of the anchor metal diffusion control layer is provided between the anchor metal diffusion control layer and the silver-containing metal layer, and a cap region containing an oxide of the anchor metal is provided on a surface of the silver-containing metal layer that is opposite from a surface on a side closer to the anchor metal diffusion control layer.