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    Laminate structure, piezoelectric element, and method of manufacturing piezoelectric element
    1.
    发明授权
    Laminate structure, piezoelectric element, and method of manufacturing piezoelectric element 有权

    公开(公告)号：US11081637B2

    公开(公告)日：2021-08-03

    申请号：US15846258

    申请日：2017-12-19

    Applicant: FUJIFILM Corporation

    Inventor： Takamichi Fujii ,  Takayuki Naono

    IPC: H01L41/187 ,  H01L41/09 ,  H01L41/316 ,  H01L41/313 ,  H01L41/08

    Abstract: A piezoelectric element is obtained using a method including: preparing a first structure; preparing a second structure; disposing a first facing electrode layer of the first structure to face a first surface of a vibration plate substrate and bonding the first structure to the first surface of the vibration plate substrate; processing the vibration plate substrate into a vibration plate by polishing or etching a second surface of the vibration plate substrate to which the first structure is bonded; preparing a laminate structure by disposing a second facing electrode layer of the second structure to face an exposed surface of the vibration plate and bonding the second structure to the vibration plate; and removing at least a part of a first silicon substrate of the first structure and a second silicon substrate of the second structure from the laminate structure.

    Pyroelectric sensor
    4.
    发明授权
    Pyroelectric sensor 有权

    公开(公告)号：US10914638B2

    公开(公告)日：2021-02-09

    申请号：US16566643

    申请日：2019-09-10

    Applicant: FUJIFILM Corporation

    Inventor： Takamichi Fujii

    IPC: G01J5/34 ,  G01J1/04 ,  G01J5/08 ,  H01L41/187

    Abstract: Provided is a pyroelectric sensor including: an Si substrate; a laminated portion in which a heat absorption layer formed of an inorganic material, a lower electrode, a piezoelectric film, and an upper electrode are laminated in this order from one surface side of the Si substrate on the one surface; and an optical filter that is provided at a position of the other surface of the Si substrate corresponding to the laminated portion and selectively transmits an infrared ray, in which an infrared ray incident to the laminated portion from the optical filter side through the Si substrate is sensed.

    Piezoelectric device and method for using same
    6.
    发明授权
    Piezoelectric device and method for using same 有权
    压电器件及其使用方法

    公开(公告)号：US09437801B2

    公开(公告)日：2016-09-06

    申请号：US14661114

    申请日：2015-03-18

    Applicant: FUJIFILM Corporation

    Inventor： Takamichi Fujii

    IPC: H01L41/04 ,  H01L41/187 ,  H01L41/257 ,  H01L41/047 ,  H01L41/08

    CPC classification number: H01L41/042 ,  H01L41/0472 ,  H01L41/0825 ,  H01L41/1876 ,  H01L41/257

    Abstract: A piezoelectric device, which has bipolar polarization-electric field (Pr-E) hysteresis characteristics of a piezoelectric material asymmetrically biased, when a first and second coercive electric fields respectively having smaller and larger absolute values are defined as Ec1 and Ec2 and a bias ratio of the coercive electric field is defined as [(Ec2+Ec1)/(Ec2−Ec1)]×100[%], includes a piezoelectric element unit including a piezoelectric body film whose bias ratio is 20% or more, the piezoelectric element unit operating with an electric field intensity smaller than that of the first coercive electric field. The piezoelectric device includes a refresh voltage applying circuit configured to apply a voltage to maintain operation performance of the relevant device, the voltage having an electric field intensity larger than the electric field intensity for operating the device and being equal to or less than three times |Ec1|, such that a polarized state of the piezoelectric body film is restored.

    Abstract translation: 当分别具有较小和较大绝对值的第一和第二矫顽电场被定义为Ec1和Ec2时，具有不对称偏置的压电材料的双极偏振电场（Pr-E）滞后特性的压电器件， 的矫顽电场定义为[（Ec2 + Ec1）/（Ec2-Ec1）]×100 [％]，包括压电元件单元，其包括偏压比为20％以上的压电体膜，压电元件单元 以比第一矫顽电场小的电场强度工作。 所述压电装置包括：刷新电压施加电路，被配置为施加电压以维持所述相关装置的操作性能，所述电压的电场强度大于用于操作所述装置的电场强度，并且等于或小于所述装置的三倍; Ec1 |，使得压电体膜的极化状态恢复。

    Field-effect transistor
    9.
    发明授权
    Field-effect transistor 有权
    场效应晶体管

    公开(公告)号：US09406809B2

    公开(公告)日：2016-08-02

    申请号：US14024881

    申请日：2013-09-12

    Applicant: FUJIFILM Corporation

    Inventor： Kenichi Umeda ,  Takamichi Fujii

    IPC: H01L29/86 ,  H01L29/786

    CPC classification number: H01L29/7869 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: There is provided a field effect transistor having, on a substrate, at least a gate electrode, a gate insulating film, an active layer mainly containing an oxide semiconductor that contains at least one of In, Ga or Zn, a source electrode, and a drain electrode, the field effect transistor including: a heat diffusion layer, wherein, given that a thermal conductivity of the substrate is Nsub (W/mK), a thermal conductivity of the heat diffusion layer is Nkaku (W/mK), a film thickness of the heat diffusion layer is T (mm), a planar opening ratio of the heat diffusion layer is R (0≦R≦1), and S=T×R, the thermal conductivity Nsub of the substrate satisfies the condition Nsub 3.0×S^(−0.97×e^(−1.2×Nsub)) and Nkaku≧Nsub.

    Abstract translation: 提供一种场效应晶体管，其在基板上至少具有栅电极，栅极绝缘膜，主要含有包含In，Ga或Zn中的至少一种的氧化物半导体的有源层，源电极和 漏电极，所述场效应晶体管包括：热扩散层，其中，假设所述衬底的热导率为Nsub（W / m·K），所述热扩散层的热导率为Nkaku（W / m·K） 热扩散层的厚度为T（mm），热扩散层的平面开口率为R（0≤R≤1），S = T×R，基板的热传导率Nsub满足条件Nsub < 1.8，热扩散层的导热率Nkaku满足条件Nkaku> 3.0×S ^（ - 0.97×e ^（ - 1.2×Nsub））和Nkaku≥Nsub。

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