Negative pattern forming method and resist pattern
    2.
    发明授权
    Negative pattern forming method and resist pattern 有权
    负图案形成方法和抗蚀剂图案

    公开(公告)号:US08859192B2

    公开(公告)日:2014-10-14

    申请号:US13904236

    申请日:2013-05-29

    CPC classification number: G03F7/20 G03F7/0397 G03F7/325 G03F7/40 Y10T428/24802

    Abstract: A negative pattern forming method, includes: (i) forming a film having a film thickness of 200 nm or more from a chemical amplification resist composition containing (A) a resin capable of increasing a polarity of the resin (A) by an action of an acid to decrease a solubility of the resin (A) for a developer containing one or more organic solvents, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film with a developer containing one or more organic solvents.

    Abstract translation: 负图案形成方法包括:(i)从含有(A)树脂(A)的树脂的树脂(A)的极性增加的树脂的化学放大抗蚀剂组合物形成膜厚度为200nm以上的膜, 降低对含有一种或多种有机溶剂的显影剂的树脂(A)的溶解度的酸,(B)在用光化射线或辐射照射时能够产生酸的化合物和(C)溶剂; (ii)使膜曝光,形成曝光膜; 和(iii)用含有一种或多种有机溶剂的显影剂显影曝光的薄膜。

    Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device
    3.
    发明授权
    Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device 有权
    图案形成方法,光化射线敏感或辐射敏感性树脂组合物,抗蚀剂膜,电子器件的制造方法和电子器件

    公开(公告)号:US09128376B2

    公开(公告)日:2015-09-08

    申请号:US14280128

    申请日:2014-05-16

    Abstract: A pattern forming method including: (i) forming a film using an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) having a repeating unit having a group generating a polar group upon being decomposed by the action of an acid, and a repeating unit having an aromatic group, a compound (B) generating an acid upon irradiation with actinic rays or radiation, and a solvent (C); (ii) exposing the film; and (iii) developing the exposed film using a developer including an organic solvent to form a negative tone pattern, wherein the resin (A) is a resin having a repeating unit having a naphthyl group, and the like, and/or the actinic ray-sensitive or radiation-sensitive resin composition contains a compound (D) having a naphthalene ring, and the like.

    Abstract translation: 一种图案形成方法,包括:(i)使用含有具有通过酸的作用分解产生极性基团的重复单元的树脂(A)的光化射线敏感性或辐射敏感性树脂组合物形成膜 和具有芳基的重复单元,在用光化射线或辐射照射时产生酸的化合物(B)和溶剂(C); (ii)曝光胶片; 和(iii)使用包含有机溶剂的显影剂显影曝光的膜以形成负色调图案,其中树脂(A)是具有萘基的重复单元的树脂等,和/或光化射线 敏感性或辐射敏感性树脂组合物含有具有萘环的化合物(D)等。

    Pattern forming method, chemical amplification resist composition and resist film
    4.
    发明授权
    Pattern forming method, chemical amplification resist composition and resist film 有权
    图案形成方法,化学放大抗蚀剂组合物和抗蚀剂膜

    公开(公告)号:US08753802B2

    公开(公告)日:2014-06-17

    申请号:US13656960

    申请日:2012-10-22

    Abstract: A pattern forming method comprising: (i) a step of forming a film from a chemical amplification resist composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the resist composition contains: (A) a resin, (B) a nonionic compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a crosslinking agent, and (D) a solvent.

    Abstract translation: 一种图案形成方法,包括:(i)从化学放大抗蚀剂组合物形成膜的步骤,(ii)曝光所述膜的步骤,和(iii)通过使用含有机溶剂的显影膜的步骤 显影剂,其中抗蚀剂组合物包含:(A)树脂,(B)在用光化射线或辐射照射时能够产生酸的非离子化合物,(C)交联剂和(D)溶剂。

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