Electrolytic solution for non-aqueous secondary battery and non-aqueous secondary battery

    公开(公告)号:US10923769B2

    公开(公告)日:2021-02-16

    申请号:US16251089

    申请日:2019-01-18

    摘要: Provided is an electrolytic solution for a non-aqueous secondary battery containing an electrolyte, an organic solvent, and a compound represented by any of General Formulae (I) to (III) and a non-aqueous secondary battery in which the electrolytic solution for a non-aqueous secondary battery is used. In the formulae, M represents a transition metal.
    R1, R2, and R3 represent a specific substituent. a represents an integer of 0 to 5. b represents an integer of 0 or more. c represents an integer of 0 to 5.
    Ar1 represents an aromatic ring. In General Formula (II), a plurality of Ar1's may be linked together.
    Ar2 represents a nitrogen-containing aromatic hetero ring.

    Electrolytic solution for non-aqueous secondary battery, non-aqueous secondary battery, and metal complex

    公开(公告)号:US11201352B2

    公开(公告)日:2021-12-14

    申请号:US16424494

    申请日:2019-05-29

    发明人: Shohei Kataoka

    摘要: Provided are an electrolytic solution for a non-aqueous secondary battery containing an electrolyte, an organic solvent, and a metal complex represented by General Formula (I), a non-aqueous secondary battery in which the electrolytic solution for a non-aqueous secondary battery is used, and a metal complex. In General Formula (I), M represents a transition metal. k represents an integer of 0 or more, m represents an integer of 0 to 4, and n represents an integer of 1 or more. Here, k+n represents a valence of M. R1 represents an alkyl group, an aryl group, an alkoxy group, a carbonyl group-containing group, a sulfonyl group-containing group, or a halogen atom. R2 and R3 represent a hydrogen atom, an alkyl group, an aryl group, an alkoxy group, a carbonyl group-containing group, a sulfonyl group-containing group, or a halogen atom. L represents a monodentate ligand.

    Pattern forming method, chemical amplification resist composition and resist film
    5.
    发明授权
    Pattern forming method, chemical amplification resist composition and resist film 有权
    图案形成方法,化学放大抗蚀剂组合物和抗蚀剂膜

    公开(公告)号:US08999622B2

    公开(公告)日:2015-04-07

    申请号:US13729752

    申请日:2012-12-28

    摘要: A pattern forming method, includes: (i) forming a film from a chemical amplification resist composition that contains (A) a resin capable of increasing a polarity of the resin (A) to decrease a solubility of the resin (A) for a developer containing an organic solvent by an action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent; (ii) exposing the film; and (iii) performing development by using a developer containing an organic solvent, wherein the resin (A) has a structure in which a polar group is protected with a leaving group capable of decomposing and leaving by an action of an acid, and the leaving group contains a fluorine atom.

    摘要翻译: 图案形成方法包括:(i)从化学增幅抗蚀剂组合物形成膜,该组合物含有(A)能提高树脂(A)极性的树脂,以降低树脂(A)对显色剂的溶解度 通过酸的作用含有有机溶剂,(B)在用光化射线或辐射照射时能够产生酸的化合物和(C)溶剂; (ii)曝光胶片; 和(iii)通过使用包含有机溶剂的显影剂进行显影,其中树脂(A)具有极性基团被离去基团保护的结构,其能够通过酸的作用分解和离开,并且离开 基团含有氟原子。