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    Negative pattern forming method and resist pattern
    4.
    发明授权
    Negative pattern forming method and resist pattern 有权
    负图案形成方法和抗蚀剂图案

    公开(公告)号：US08859192B2

    公开(公告)日：2014-10-14

    申请号：US13904236

    申请日：2013-05-29

    Applicant: FUJIFILM Corporation

    Inventor： Keita Kato ,  Kana Fujii ,  Sou Kamimura ,  Kaoru Iwato

    IPC: G03F7/20 ,  G03F7/039 ,  G03F7/32 ,  G03F7/40

    CPC classification number: G03F7/20 ,  G03F7/0397 ,  G03F7/325 ,  G03F7/40 ,  Y10T428/24802

    Abstract: A negative pattern forming method, includes: (i) forming a film having a film thickness of 200 nm or more from a chemical amplification resist composition containing (A) a resin capable of increasing a polarity of the resin (A) by an action of an acid to decrease a solubility of the resin (A) for a developer containing one or more organic solvents, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film with a developer containing one or more organic solvents.

    Abstract translation: 负图案形成方法包括：（i）从含有（A）树脂（A）的树脂的树脂（A）的极性增加的树脂的化学放大抗蚀剂组合物形成膜厚度为200nm以上的膜， 降低对含有一种或多种有机溶剂的显影剂的树脂（A）的溶解度的酸，（B）在用光化射线或辐射照射时能够产生酸的化合物和（C）溶剂; （ii）使膜曝光，形成曝光膜; 和（iii）用含有一种或多种有机溶剂的显影剂显影曝光的薄膜。

    Pattern forming method, resist pattern formed by the method, method for manufacturing electronic device using the same, and electronic device
    5.
    发明授权
    Pattern forming method, resist pattern formed by the method, method for manufacturing electronic device using the same, and electronic device 有权
    图案形成方法，通过该方法形成的抗蚀图案，使用该方法的电子器件的制造方法和电子器件

    公开(公告)号：US09448482B2

    公开(公告)日：2016-09-20

    申请号：US14719830

    申请日：2015-05-22

    Applicant: FUJIFILM Corporation

    Inventor： Kaoru Iwato ,  Takanobu Takeda ,  Hiroo Takizawa

    IPC: G03F7/075 ,  G03F7/30 ,  G03F7/11 ,  H01L21/027 ,  H01L21/033 ,  H01L21/306 ,  G03F7/40 ,  G03F7/039 ,  G03F7/32

    CPC classification number: G03F7/30 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0752 ,  G03F7/11 ,  G03F7/325 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/0275 ,  H01L21/0337 ,  H01L21/30604

    Abstract: There is provided a pattern forming method including (1) forming a film by an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) capable of increasing the polarity by the action of an acid so that a solubility thereof in a developer containing an organic solvent is decreased, (2) exposing the film, (3) developing the film by a developer including an organic solvent to form a negative pattern having a space part obtained by removing a part of the film and a residual film part which is not removed by the developing, (4) forming a resist film for reversing a pattern, on the negative pattern, so as to be embedded in the space part in the negative pattern, and (5) reversing the negative pattern into a positive pattern by removing the residual film part in the negative pattern by using an alkaline wet etching liquid.

    Abstract translation: 提供了一种图案形成方法，其包括（1）通过含有能够通过酸的作用增加极性的树脂（A）的光化射线敏感性或辐射敏感性树脂组合物形成膜，使得其在 包含有机溶剂的显影剂减少，（2）使膜曝光，（3）通过包含有机溶剂的显影剂显影膜，以形成具有通过除去一部分膜而获得的空间部分的负图案和残留膜部分 （4）在负图案上形成用于反转图案的抗蚀剂膜，以便嵌入在负图案的空间部分中，并且（5）将负图案反转为正的图案 通过使用碱性湿蚀刻液除去负图案中的残留膜部分的图案。

    Pattern forming method, chemical amplification resist composition and resist film
    8.
    发明授权
    Pattern forming method, chemical amplification resist composition and resist film 有权
    图案形成方法，化学放大抗蚀剂组合物和抗蚀剂膜

    公开(公告)号：US08999622B2

    公开(公告)日：2015-04-07

    申请号：US13729752

    申请日：2012-12-28

    Applicant: FUJIFILM Corporation

    Inventor： Kaoru Iwato ,  Shohei Kataoka

    IPC: G03F7/004 ,  G03F7/039 ,  G03F7/26 ,  G03F7/20 ,  G03F7/32

    CPC classification number: G03F7/0046 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/325 ,  Y10S430/108

    Abstract: A pattern forming method, includes: (i) forming a film from a chemical amplification resist composition that contains (A) a resin capable of increasing a polarity of the resin (A) to decrease a solubility of the resin (A) for a developer containing an organic solvent by an action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent; (ii) exposing the film; and (iii) performing development by using a developer containing an organic solvent, wherein the resin (A) has a structure in which a polar group is protected with a leaving group capable of decomposing and leaving by an action of an acid, and the leaving group contains a fluorine atom.

    Abstract translation: 图案形成方法包括：（i）从化学增幅抗蚀剂组合物形成膜，该组合物含有（A）能提高树脂（A）极性的树脂，以降低树脂（A）对显色剂的溶解度 通过酸的作用含有有机溶剂，（B）在用光化射线或辐射照射时能够产生酸的化合物和（C）溶剂; （ii）曝光胶片; 和（iii）通过使用包含有机溶剂的显影剂进行显影，其中树脂（A）具有极性基团被离去基团保护的结构，其能够通过酸的作用分解和离开，并且离开 基团含有氟原子。

    Pattern forming method, chemical amplification resist composition and resist film
    9.
    发明授权
    Pattern forming method, chemical amplification resist composition and resist film 有权
    图案形成方法，化学放大抗蚀剂组合物和抗蚀剂膜

    公开(公告)号：US08753802B2

    公开(公告)日：2014-06-17

    申请号：US13656960

    申请日：2012-10-22

    Applicant: FUJIFILM Corporation

    Inventor： Keita Kato ,  Shinji Tarutani ,  Sou Kamimura ,  Yuichiro Enomoto ,  Kaoru Iwato

    IPC: G03F7/26

    CPC classification number: G03F7/0397 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/2041 ,  G03F7/325

    Abstract: A pattern forming method comprising: (i) a step of forming a film from a chemical amplification resist composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the resist composition contains: (A) a resin, (B) a nonionic compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a crosslinking agent, and (D) a solvent.

    Abstract translation: 一种图案形成方法，包括：（i）从化学放大抗蚀剂组合物形成膜的步骤，（ii）曝光所述膜的步骤，和（iii）通过使用含有机溶剂的显影膜的步骤 显影剂，其中抗蚀剂组合物包含：（A）树脂，（B）在用光化射线或辐射照射时能够产生酸的非离子化合物，（C）交联剂和（D）溶剂。

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