公开(公告)号：US11124675B2

公开(公告)日：2021-09-21

申请号：US16630605

申请日：2018-07-18

Applicant: FUJIMI INCORPORATED

Inventor： Makoto Tabata

IPC: C09G1/02 ,  C09G1/00 ,  B24B1/00 ,  C09G1/06 ,  C09K3/14 ,  C09K13/06 ,  C09G1/04 ,  H01L21/321 ,  H01L21/306 ,  B24B37/04 ,  H01L21/304

Abstract: A substrate polishing method includes a stock polishing step comprising a plurality of stock polishing sub-steps in which a first polishing solution, a second polishing solution, and a third polishing solution are applied, in that order, to a substrate. A content COMP1 of water-soluble polymer P1 in the first polishing solution, a content COMP2 of water-soluble polymer P2 in the second polishing solution, and a content COMP3 of water-soluble polymer P3 in the third polishing solution satisfy COMP1

公开(公告)号：US11648641B2

公开(公告)日：2023-05-16

申请号：US16080659

申请日：2017-02-13

Applicant: FUJIMI INCORPORATED

Inventor： Makoto Tabata

IPC: B24B37/11 ,  B24B37/00 ,  H01L21/02 ,  C09G1/02 ,  H01L21/304 ,  B24B37/08

CPC classification number: B24B37/11 ,  B24B37/00 ,  B24B37/08 ,  C09G1/02 ,  H01L21/02013 ,  H01L21/02024 ,  H01L21/304

Abstract: Provided are a method for polishing a silicon substrate according to which PID can be reduced and a polishing composition set usable in the polishing method. The silicon substrate polishing method provided by this invention comprises a stock polishing step and a final polishing step. The stock polishing step comprises several stock polishing sub-steps carried out on one same platen. The several stock polishing sub-steps comprise a final stock polishing sub-step carried out while supplying a final stock polishing slurry PF to the silicon substrate. The total amount of the final stock polishing slurry PF supplied to the silicon substrate during the final stock polishing sub-step has a total weight of Cu and a total weight of Ni, at least one of which being 1 μg or less.

公开(公告)号：US09685343B2

公开(公告)日：2017-06-20

申请号：US14910803

申请日：2014-06-12

Applicant: FUJIMI INCORPORATED

Inventor： Makoto Tabata ,  Shinichiro Takami ,  Shogaku Ide

IPC: H01L21/306 ,  C09G1/02 ,  H01L21/02 ,  C09K3/14 ,  B24B37/28

CPC classification number: H01L21/30625 ,  B24B37/28 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024

Abstract: [Problem] To provide a method for producing a polished object, which can remarkably reduce a haze level on a surface of the object to be polished while defects are significantly reduced.[Solution] A method for producing a polished object, which includes a double-side polishing step in which an object to be polished is subjected to double-side polishing using a double-side polishing composition including first abrasive grains having an average primary particle diameter of 40 nm or more and a nitrogen-containing water-soluble polymer to obtain a double-side polished object; and a single-side polishing step in which the double-side polished object is subjected to single-side polishing using a single-side polishing composition including second abrasive grains having an average primary particle diameter of 40 nm or less and a water-soluble polymer, and in which a ratio of an average primary particle diameter (A) of the first abrasive grains with respect to an average primary particle diameter (B) of the second abrasive grains (A)/(B) is more than 1 and 2.5 or less.