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    POLISHING COMPOSITION
    1.
    发明申请
    POLISHING COMPOSITION 有权
    抛光组合物

    公开(公告)号：US20150069016A1

    公开(公告)日：2015-03-12

    申请号：US14385298

    申请日：2013-03-11

    Applicant: FUJIMI INCORPORATED

    Inventor： Shuichi Tamada ,  Satoru Yarita

    IPC: C09G1/02 ,  C23F1/40 ,  C23F1/30

    CPC classification number: C09G1/02 ,  C09K3/1409 ,  C09K3/1436 ,  C09K3/1463 ,  C23F1/30 ,  C23F1/40 ,  C23F3/02 ,  H01L21/02024 ,  H01L21/30625 ,  H01L21/3212

    Abstract: There is provided a polishing composition capable of suppressing formation of a stepped portion caused by etching of a surface of a polishing object including a portion containing a group IV material when the polishing object is polished. The present invention relates to a polishing composition for polishing of a polishing object including a portion that contains a group IV material, and the polishing composition contains an oxidizing agent and an anticorrosive agent. Preferably, the anticorrosive agent includes at least one selected from the group consisting of compounds in which two or more carbonyl groups contained in a molecule are bonded through a carbon atom in the molecule. To be more specific, preferably, the anticorrosive agent includes at least one selected from the group consisting of a 1,3-diketone compound, a 1,4-diketone compound, and a triketone compound.

    Abstract translation: 提供了一种研磨组合物，其能够在研磨对象被研磨时，抑制由包含含有IV族材料的部分的研磨对象物的表面的蚀刻而产生的阶梯部的形成。 本发明涉及一种用于抛光抛光对象物的抛光组合物，该抛光组合物包括含有IV族材料的部分，并且抛光组合物含有氧化剂和防腐蚀剂。 防腐剂优选包括选自分子中包含的两个或更多个羰基通过分子中的碳原子结合的化合物中的至少一种。 更具体地说，优选防锈剂包括选自1,3-二酮化合物，1,4-二酮化合物和三酮化合物中的至少一种。

    POLISHING COMPOSITION
    2.
    发明申请
    POLISHING COMPOSITION 有权
    抛光组合物

    公开(公告)号：US20140342561A1

    公开(公告)日：2014-11-20

    申请号：US14359248

    申请日：2012-11-21

    Applicant: FUJIMI INCORPORATED

    Inventor： Shuugo Yokota ,  Yasuyuki Yamato ,  Satoru Yarita ,  Tomohiko Akatsuka

    IPC: C09G1/02 ,  H01L21/306

    CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/30625 ,  H01L29/20

    Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a group III-V compound material. The polishing composition contains abrasive grains, an oxidizing agent, and a water-soluble polymer. When the polishing composition is left to stand for one day in an environment with a temperature of 25° C., the water-soluble polymer may be adsorbed on the abrasive grains at 5,000 or more molecules per 1 μm2 of the surface area of the abrasive grains. Alternatively, the water-soluble polymer may be a compound that reduces the water contact angle of the portion containing a group III-V compound material of the object after being polished with the polishing composition.

    Abstract translation: 本发明的抛光组合物用于抛光包含含III-V族化合物的部分的物体。 抛光组合物含有磨粒，氧化剂和水溶性聚合物。 当抛光组合物在温度为25℃的环境中放置一天时，水溶性聚合物可以每摩尔磨料表面积5,000微米或更多分子吸附在磨料颗粒上 谷物。 或者，水溶性聚合物可以是在用抛光组合物抛光后降低包含物体的III-V族化合物的部分的水接触角的化合物。

    Polishing composition
    3.
    发明授权
    Polishing composition 有权

    公开(公告)号：US10907073B2

    公开(公告)日：2021-02-02

    申请号：US16476705

    申请日：2017-12-07

    Applicant: FUJIMI INCORPORATED

    Inventor： Satoru Yarita ,  Yukinobu Yoshizaki

    IPC: C09G1/02 ,  B24B37/04 ,  H01L21/3105 ,  H01L21/321

    Abstract: A polishing composition for use in polishing an object to be polished, which comprises abrasive grains, a dispersing medium, and an additive, wherein the abrasive grains are surface-modified, the additive is represented by the following formula 1: wherein in the formula 1, X1 is O or NR4, X2 is a single bond or NR5, R1 to R5 are each independently a hydrogen atom; a hydroxy group; a nitro group; a nitroso group; a C1-4 alkyl group optionally substituted with a carboxyl group, an amino group, or a hydroxy group; or CONH2; with the proviso that R2 and R5 may form a ring; when X2 is a single bond, R3 is not a hydrogen atom, or R1 to R3 are not a methyl group; and when X2 is NR5 and three of R1 to R3 and R5 are a hydrogen atom, the other one is not a hydrogen atom or a methyl group; and a pH is 5.0 or less. According to the present invention, a polishing composition capable of polishing not only polycrystalline silicon but also a silicon nitride film at high speed and also suppressing a polishing speed of a silicon oxide film is provided.

    POLISHING COMPOSITION
    9.
    发明申请
    POLISHING COMPOSITION 有权
    抛光组合物

    公开(公告)号：US20140322913A1

    公开(公告)日：2014-10-30

    申请号：US14359269

    申请日：2012-11-21

    Applicant: FUJIMI INCORPORATED

    Inventor： Shuugo Yokota ,  Yasuyuki Yamato ,  Satoru Yarita ,  Tomohiko Akatsuka ,  Shuichi Tamada

    IPC: C09G1/02 ,  H01L29/16 ,  H01L29/20 ,  B24B1/00 ,  H01L21/306

    CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/30625 ,  H01L29/16 ,  H01L29/20

    Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a high-mobility material and a portion containing a silicon material. The polishing composition comprises an oxidizing agent and abrasive grains having an average primary particle diameter of 40 nm or less. The polishing composition preferably further contains a hydrolysis-suppressing compound that bonds to a surface OH group of the portion containing a silicon material of the object to function to suppress hydrolysis of the portion containing a silicon material. Alternatively, a polishing composition of the present invention contains abrasive grains, an oxidizing agent, and a hydrolysis-suppressing compound. The polishing composition preferably has a neutral pH.

    Abstract translation: 本发明的抛光组合物用于抛光包含含有高迁移率材料的部分和含有硅材料的部分的物体。 抛光组合物包含平均一次粒径为40nm以下的氧化剂和磨粒。 抛光组合物优选还含有水解抑制化合物，其结合到含有该物质的硅材料的部分的表面OH基上，以抑制含硅材料部分的水解。 或者，本发明的研磨用组合物含有磨粒，氧化剂和水解抑制性化合物。 抛光组合物优选具有中性pH。

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