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公开(公告)号：US20210210929A1
公开(公告)日：2021-07-08
申请号：US17187086
申请日：2021-02-26
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Junji YOSHIDA , Hirokazu ITOH , Satoshi IRINO , Yuichiro IRIE , Taketsugu SAWAMURA
IPC: H01S5/32 , H01S3/067 , H01S5/34 , H01S5/22 , H01S5/20 , H01S5/343 , H01S5/227 , B82Y20/00 , H01S5/10 , H01S5/02251 , H01S5/02253
Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.
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公开(公告)号：US20240291240A1
公开(公告)日：2024-08-29
申请号：US18655906
申请日：2024-05-06
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Junji YOSHIDA , Hirokazu ITOH , Satoshi IRINO , Yuichiro IRIE , Taketsugu SAWAMURA
IPC: H01S5/32 , B82Y20/00 , H01S3/04 , H01S3/067 , H01S3/094 , H01S3/0941 , H01S3/30 , H01S5/00 , H01S5/02251 , H01S5/02253 , H01S5/024 , H01S5/028 , H01S5/10 , H01S5/14 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/34 , H01S5/343
CPC classification number: H01S5/3216 , H01S3/0675 , H01S3/06754 , H01S5/02251 , H01S5/02253 , H01S5/1064 , H01S5/2018 , H01S5/2077 , H01S5/2205 , H01S5/2206 , H01S5/227 , H01S5/3213 , H01S5/34 , H01S5/3406 , H01S5/34306 , H01S5/3434 , B82Y20/00 , H01S3/04 , H01S3/094003 , H01S3/094011 , H01S3/09415 , H01S3/302 , H01S5/0064 , H01S5/024 , H01S5/0287 , H01S5/1039 , H01S5/146 , H01S5/2222 , H01S2301/03 , H01S2301/166
Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.
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公开(公告)号：US20170187168A1
公开(公告)日：2017-06-29
申请号：US15454444
申请日：2017-03-09
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Junji YOSHIDA , Hirokazu ITOH , Satoshi IRINO , Yuichiro IRIE , Taketsugu SAWAMURA
CPC classification number: H01S5/3216 , B82Y20/00 , H01S3/04 , H01S3/0675 , H01S3/06754 , H01S3/094003 , H01S3/094011 , H01S3/09415 , H01S3/302 , H01S5/0064 , H01S5/02284 , H01S5/02288 , H01S5/024 , H01S5/0287 , H01S5/1039 , H01S5/1064 , H01S5/146 , H01S5/2018 , H01S5/2077 , H01S5/2205 , H01S5/2206 , H01S5/2222 , H01S5/227 , H01S5/3213 , H01S5/34 , H01S5/3406 , H01S5/34306 , H01S5/3434 , H01S2301/03 , H01S2301/166
Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.
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公开(公告)号：US20230187906A1
公开(公告)日：2023-06-15
申请号：US18164285
申请日：2023-02-03
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Junji YOSHIDA , Hirokazu ITOH , Satoshi IRINO , Yuichiro IRIE , Taketsugu SAWAMURA
IPC: H01S5/32 , H01S3/067 , H01S5/34 , H01S5/22 , H01S5/20 , H01S5/343 , H01S5/227 , B82Y20/00 , H01S5/10 , H01S5/02251 , H01S5/02253
CPC classification number: H01S5/3216 , H01S3/0675 , H01S5/34 , H01S5/2206 , H01S5/2205 , H01S5/2077 , H01S5/2018 , H01S5/34306 , H01S5/3406 , H01S5/3213 , H01S3/06754 , H01S5/227 , B82Y20/00 , H01S5/1064 , H01S5/3434 , H01S5/02251 , H01S5/02253 , H01S3/094003
Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.
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公开(公告)号：US20210184436A1
公开(公告)日：2021-06-17
申请号：US17186933
申请日：2021-02-26
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Junji YOSHIDA , Hirokazu ITOH , Satoshi IRINO , Yuichiro IRIE , Taketsugu SAWAMURA
IPC: H01S5/32 , H01S3/067 , H01S5/34 , H01S5/22 , H01S5/20 , H01S5/343 , H01S5/227 , B82Y20/00 , H01S5/10 , H01S5/02251 , H01S5/02253
Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The quantum well active layer is doped with 0.3 to 1×1018/cm3 of n-type impurity.
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Patent Agency Ranking
6.发明申请METHOD OF DESIGNING SEMICONDUCTOR LASER DEVICE, METHOD OF DESIGNING RAMAN AMPLIFIER, METHODS OF MANUFACTURING SEMICONDUCTOR LASER DEVICE, SEMICONDUCTOR LASER DEVICE, RAMAN AMPLIFIER, AND OPTICAL COMMUNICATION SYSTEM 有权设计半导体激光器件的方法，设计拉曼放大器的方法，制造半导体激光器件的方法，半导体激光器件，拉曼放大器和光通信系统公开(公告)号：US20160285237A1
公开(公告)日：2016-09-29
申请号：US15177175
申请日：2016-06-08
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Hideaki HASEGAWA , Noriyuki YOKOUCHI , Taketsugu SAWAMURA , Satoshi IRINO , Junji YOSHIDA
CPC classification number: H01S5/146 , H01S3/06754 , H01S3/094011 , H01S3/094096 , H01S3/302 , H01S5/02208 , H01S5/02248 , H01S5/02415 , H01S5/0652 , H01S5/141 , H01S5/142 , H01S2301/03
Abstract: A method of designing a semiconductor laser device includes: controlling a distance between the output-side reflection unit and the second reflection unit and an effective optical feedback κ to the semiconductor laser element, the effective optical feedback κ defined by a below-presented formula (1) including a circulating time τ of the light in the semiconductor laser element, a reflectivity R1 of the output-side reflection unit, and a reflectivity R2 of the second reflection unit; selecting a semiconductor laser device in which an LFF period is equal to or smaller than 20 ns as a semiconductor laser device in which high speed switching occurs between an FBG mode and an FP mode; and using the selected semiconductor laser device as an semiconductor laser device oscillating in a coherent collapse mode. κ=(1/τ)×(1−R1)×(R2/R1)1/2 (1)
Abstract translation: 一种半导体激光器件的设计方法，其特征在于，选择能够以FBG和FP模式之间快速切换的半导体激光器件，并以该器件以相干折叠模式振荡的方式使用半导体激光器件。 其中，通过控制从输出侧反射装置到第二反射装置的距离，半导体激光装置的LFF周期设定为等于或小于20ns，并将半导体激光元件的有效返回光量（κ）定义为 以下表达式：κ=（1 /τ）×（1-R1）×（R2 / R1）½其中τ表示半导体激光元件中的光的循环时间; R1表示输出侧反射装置的反射率; R2表示第二反射装置的反射率。
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公开(公告)号：US20200067279A1
公开(公告)日：2020-02-27
申请号：US16672163
申请日：2019-11-01
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Junji YOSHIDA , Hirokazu ITOH , Satoshi IRINO , Yuichiro IRIE , Taketsugu SAWAMURA , Masaki FUNABASHI , Nobumasa TANAKA
IPC: H01S5/32 , H01S5/343 , H01S5/022 , H01S3/067 , H01S5/34 , H01S5/22 , H01S5/20 , H01S5/227 , B82Y20/00 , H01S5/10
Abstract: A distributed feedback (DFB) laser outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The DFB laser includes a separate confinement heterostructure layer positioned between the quantum well active layer and then-type cladding layer. The DFB laser includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and then-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The DFB laser has a function to select a specific wavelength by returning a specific wavelength in the wavelength-variable laser.
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公开(公告)号：US20180331503A1
公开(公告)日：2018-11-15
申请号：US16029285
申请日：2018-07-06
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Junji YOSHIDA , Hirokazu ITOH , Satoshi IRINO , Yuichiro IRIE , Taketsugu SAWAMURA , Masaki FUNABASHI , Nobumasa TANAKA
Abstract: A wavelength-variable laser outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.
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公开(公告)号：US20150311676A1
公开(公告)日：2015-10-29
申请号：US14795387
申请日：2015-07-09
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Junji YOSHIDA , Hirokazu ITOH , Satoshi IRINO , Yuichiro IRIE , Taketsugu SAWAMURA
CPC classification number: H01S5/3216 , B82Y20/00 , H01S3/04 , H01S3/0675 , H01S3/06754 , H01S3/094003 , H01S3/094011 , H01S3/09415 , H01S3/302 , H01S5/0064 , H01S5/02284 , H01S5/02288 , H01S5/024 , H01S5/0287 , H01S5/1039 , H01S5/1064 , H01S5/146 , H01S5/2018 , H01S5/2077 , H01S5/2205 , H01S5/2206 , H01S5/2222 , H01S5/227 , H01S5/3213 , H01S5/34 , H01S5/3406 , H01S5/34306 , H01S5/3434 , H01S2301/03 , H01S2301/166
Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.
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10.发明申请OPTICAL SEMICONDUCTOR DEVICE, SEMICONDUCTOR LASER MODULE, AND OPTICAL FIBER AMPLIFIER 有权光学半导体器件，半导体激光器模块和光纤放大器公开(公告)号：US20150103858A1
公开(公告)日：2015-04-16
申请号：US14507374
申请日：2014-10-06
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Junji YOSHIDA , Hirokazu ITOH , Satoshi IRINO , Yuichiro IRIE , Taketsugu SAWAMURA
CPC classification number: H01S5/3216 , B82Y20/00 , H01S3/04 , H01S3/0675 , H01S3/06754 , H01S3/094003 , H01S3/094011 , H01S3/09415 , H01S3/302 , H01S5/0064 , H01S5/02284 , H01S5/02288 , H01S5/024 , H01S5/0287 , H01S5/1039 , H01S5/1064 , H01S5/146 , H01S5/2018 , H01S5/2077 , H01S5/2205 , H01S5/2206 , H01S5/2222 , H01S5/227 , H01S5/3213 , H01S5/34 , H01S5/3406 , H01S5/34306 , H01S5/3434 , H01S2301/03 , H01S2301/166
Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.
Abstract translation: 输出预定波长的激光的光学半导体器件包括：在厚度方向上位于p型覆层和n型覆层之间的量子阱有源层; 位于量子阱有源层和n型覆层之间的单独限制异质结构层; 以及位于分离的限制异质结构层和n型覆层之间的电场分布控制层，并且由至少两个具有比构成量子阱活性的势垒层的带隙能量大的带隙能量的半导体层构成 层。
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