公开(公告)号：US09711945B2

公开(公告)日：2017-07-18

申请号：US15177175

申请日：2016-06-08

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Hideaki Hasegawa ,  Noriyuki Yokouchi ,  Taketsugu Sawamura ,  Satoshi Irino ,  Junji Yoshida

IPC: H01S5/14 ,  H01S3/067 ,  H01S3/094 ,  H01S3/30 ,  H01S5/024 ,  H01S5/065 ,  H01S5/022

CPC classification number: H01S5/146 ,  H01S3/06754 ,  H01S3/094011 ,  H01S3/094096 ,  H01S3/302 ,  H01S5/02208 ,  H01S5/02248 ,  H01S5/02415 ,  H01S5/0652 ,  H01S5/141 ,  H01S5/142 ,  H01S2301/03

Abstract: A method of designing a semiconductor laser device includes: controlling a distance between the output-side reflection unit and the second reflection unit and an effective optical feedback κ to the semiconductor laser element, the effective optical feedback κ defined by a below-presented formula (1) including a circulating time τ of the light in the semiconductor laser element, a reflectivity R1 of the output-side reflection unit, and a reflectivity R2 of the second reflection unit; selecting a semiconductor laser device in which an LFF period is equal to or smaller than 20 ns as a semiconductor laser device in which high speed switching occurs between an FBG mode and an FP mode; and using the selected semiconductor laser device as an semiconductor laser device oscillating in a coherent collapse mode. κ=(1/τ)×(1−R1)×(R2/R1)1/2  (1)

公开(公告)号：US09083150B2

公开(公告)日：2015-07-14

申请号：US14507374

申请日：2014-10-06

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Junji Yoshida ,  Hirokazu Itoh ,  Satoshi Irino ,  Yuichiro Irie ,  Taketsugu Sawamura

IPC: H01S5/00 ,  H01S5/20 ,  H01S5/34 ,  H01S3/067 ,  H01S5/22 ,  H01S5/024 ,  H01S3/04

CPC classification number: H01S5/3216 ,  B82Y20/00 ,  H01S3/04 ,  H01S3/0675 ,  H01S3/06754 ,  H01S3/094003 ,  H01S3/094011 ,  H01S3/09415 ,  H01S3/302 ,  H01S5/0064 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/024 ,  H01S5/0287 ,  H01S5/1039 ,  H01S5/1064 ,  H01S5/146 ,  H01S5/2018 ,  H01S5/2077 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/227 ,  H01S5/3213 ,  H01S5/34 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/3434 ,  H01S2301/03 ,  H01S2301/166

Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.

Abstract translation: 输出预定波长的激光的光学半导体器件包括：在厚度方向上位于p型覆层和n型覆层之间的量子阱有源层; 位于量子阱有源层和n型覆层之间的单独限制异质结构层; 以及位于分离的限制异质结构层和n型覆层之间的电场分布控制层，并且由至少两个具有比构成量子阱活性的势垒层的带隙能量大的带隙能量的半导体层构成 层。

公开(公告)号：US11605935B2

公开(公告)日：2023-03-14

申请号：US17187086

申请日：2021-02-26

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Junji Yoshida ,  Hirokazu Itoh ,  Satoshi Irino ,  Yuichiro Irie ,  Taketsugu Sawamura

IPC: H01S5/00 ,  H01S5/32 ,  H01S3/067 ,  H01S5/34 ,  H01S5/22 ,  H01S5/20 ,  H01S5/343 ,  H01S5/227 ,  B82Y20/00 ,  H01S5/10 ,  H01S5/02251 ,  H01S5/02253 ,  H01S3/094 ,  H01S5/024 ,  H01S3/04 ,  H01S5/14 ,  H01S5/028 ,  H01S3/30 ,  H01S3/0941

Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.

公开(公告)号：US11581706B2

公开(公告)日：2023-02-14

申请号：US17186933

申请日：2021-02-26

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Junji Yoshida ,  Hirokazu Itoh ,  Satoshi Irino ,  Yuichiro Irie ,  Taketsugu Sawamura

IPC: H01S5/00 ,  H01S5/32 ,  H01S3/067 ,  H01S5/34 ,  H01S5/22 ,  H01S5/20 ,  H01S5/343 ,  H01S5/227 ,  B82Y20/00 ,  H01S5/10 ,  H01S5/02251 ,  H01S5/02253 ,  H01S3/094 ,  H01S5/024 ,  H01S3/04 ,  H01S5/14 ,  H01S5/028 ,  H01S3/30 ,  H01S3/0941

Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The quantum well active layer is doped with 0.3 to 1×1018/cm3 of n-type impurity.

公开(公告)号：US10938183B2

公开(公告)日：2021-03-02

申请号：US16672163

申请日：2019-11-01

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Junji Yoshida ,  Hirokazu Itoh ,  Satoshi Irino ,  Yuichiro Irie ,  Taketsugu Sawamura ,  Masaki Funabashi ,  Nobumasa Tanaka

IPC: H01S5/00 ,  H01S5/32 ,  H01S5/022 ,  H01S3/067 ,  H01S5/34 ,  H01S5/22 ,  H01S5/20 ,  H01S5/343 ,  H01S5/227 ,  B82Y20/00 ,  H01S5/10 ,  H01S3/094 ,  H01S5/024 ,  H01S3/04 ,  H01S5/14 ,  H01S5/028 ,  H01S3/30 ,  H01S3/0941

Abstract: A distributed feedback (DFB) laser outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The DFB laser includes a separate confinement heterostructure layer positioned between the quantum well active layer and then-type cladding layer. The DFB laser includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and then-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The DFB laser has a function to select a specific wavelength by returning a specific wavelength in the wavelength-variable laser.

公开(公告)号：US12009636B2

公开(公告)日：2024-06-11

申请号：US18164285

申请日：2023-02-03

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Junji Yoshida ,  Hirokazu Itoh ,  Satoshi Irino ,  Yuichiro Irie ,  Taketsugu Sawamura

IPC: H01S5/00 ,  H01S3/067 ,  H01S5/02251 ,  H01S5/02253 ,  H01S5/10 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  B82Y20/00 ,  H01S3/04 ,  H01S3/094 ,  H01S3/0941 ,  H01S3/30 ,  H01S5/024 ,  H01S5/028 ,  H01S5/14

CPC classification number: H01S5/3216 ,  H01S3/0675 ,  H01S3/06754 ,  H01S5/02251 ,  H01S5/02253 ,  H01S5/1064 ,  H01S5/2018 ,  H01S5/2077 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/227 ,  H01S5/3213 ,  H01S5/34 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/3434 ,  B82Y20/00 ,  H01S3/04 ,  H01S3/094003 ,  H01S3/094011 ,  H01S3/09415 ,  H01S3/302 ,  H01S5/0064 ,  H01S5/024 ,  H01S5/0287 ,  H01S5/1039 ,  H01S5/146 ,  H01S5/2222 ,  H01S2301/03 ,  H01S2301/166

Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.

公开(公告)号：US10511150B2

公开(公告)日：2019-12-17

申请号：US16029285

申请日：2018-07-06

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Junji Yoshida ,  Hirokazu Itoh ,  Satoshi Irino ,  Yuichiro Irie ,  Taketsugu Sawamura ,  Masaki Funabashi ,  Nobumasa Tanaka

IPC: H01S5/00 ,  H01S5/32 ,  H01S5/022 ,  H01S3/067 ,  B82Y20/00 ,  H01S5/34 ,  H01S5/227 ,  H01S5/20 ,  H01S5/22 ,  H01S5/343 ,  H01S5/10 ,  H01S5/14 ,  H01S5/028 ,  H01S3/30 ,  H01S3/0941 ,  H01S3/094 ,  H01S3/04 ,  H01S5/024 ,  H01S3/13 ,  H01S5/30

Abstract: A wavelength-variable laser outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.

公开(公告)号：US10020638B2

公开(公告)日：2018-07-10

申请号：US15454444

申请日：2017-03-09

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Junji Yoshida ,  Hirokazu Itoh ,  Satoshi Irino ,  Yuichiro Irie ,  Taketsugu Sawamura

IPC: H01S5/00 ,  H01S5/32 ,  H01S5/022 ,  H01S3/067 ,  H01S5/20 ,  H01S5/343 ,  H01S5/10 ,  H01S5/22 ,  H01S5/227 ,  H01S3/04

CPC classification number: H01S5/3216 ,  B82Y20/00 ,  H01S3/04 ,  H01S3/0675 ,  H01S3/06754 ,  H01S3/094003 ,  H01S3/094011 ,  H01S3/09415 ,  H01S3/302 ,  H01S5/0064 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/024 ,  H01S5/0287 ,  H01S5/1039 ,  H01S5/1064 ,  H01S5/146 ,  H01S5/2018 ,  H01S5/2077 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/227 ,  H01S5/3213 ,  H01S5/34 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/3434 ,  H01S2301/03 ,  H01S2301/166

Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.

公开(公告)号：US09601905B2

公开(公告)日：2017-03-21

申请号：US14795387

申请日：2015-07-09

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Junji Yoshida ,  Hirokazu Itoh ,  Satoshi Irino ,  Yuichiro Irie ,  Taketsugu Sawamura

IPC: H01S5/00 ,  H01S5/32 ,  H01S5/227 ,  H01S3/067 ,  H01S5/34 ,  B82Y20/00 ,  H01S5/20 ,  H01S3/094 ,  H01S3/0941 ,  H01S3/30 ,  H01S5/022 ,  H01S5/028 ,  H01S5/10 ,  H01S5/14 ,  H01S5/22 ,  H01S5/343 ,  H01S3/04 ,  H01S5/024

CPC classification number: H01S5/3216 ,  B82Y20/00 ,  H01S3/04 ,  H01S3/0675 ,  H01S3/06754 ,  H01S3/094003 ,  H01S3/094011 ,  H01S3/09415 ,  H01S3/302 ,  H01S5/0064 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/024 ,  H01S5/0287 ,  H01S5/1039 ,  H01S5/1064 ,  H01S5/146 ,  H01S5/2018 ,  H01S5/2077 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/227 ,  H01S5/3213 ,  H01S5/34 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/3434 ,  H01S2301/03 ,  H01S2301/166

Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.