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44 条记录 (耗时 0.023 秒)

    Thin film ferroelectric light modulators
    1.
    发明授权
    Thin film ferroelectric light modulators 失效
    薄膜铁电光调制器

    公开(公告)号：US06211993B1

    公开(公告)日：2001-04-03

    申请号：US09420475

    申请日：1999-10-19

    申请人： Feiling Wang ,  Gene H. Haertling

    发明人： Feiling Wang ,  Gene H. Haertling

    IPC分类号： G02F103

    CPC分类号： G02F1/21 ,  G02F1/055 ,  G02F1/19 ,  Y10T428/24942

    摘要： A solid state device used to modulate the intensity of reflected or transmitted light by modulating with an external voltage the optical thickness of a thin film ferroelectric placed in an etalon cavity is disclosed. The device is constructed by selecting a generally planar supporting substrate, preferably silicon or sapphire in order to be compatible with silicon integrated circuits. A dielectric stack consisting of alternating layers of different index of refraction materials, also specifically selected to be compatible with later growth of the thin film ferroelectric, is deposited thereon to form a partially reflective and partially transmitting mirror, followed by a transparent electrically conductive layer. The thin film ferroelectric is deposited on the conductive layer, followed by a second transparent conductive layer and a second dielectric stack. Leads are connected to the conductive layers and in turn to a voltage generator. In one version of the invention, the functions of both the second (top) electrically conductive layer and dielectric stack are fulfilled by using a semi-transparent conducting film. In another version, the functions of both the first (bottom) electrically conductive layer and dielectric stack are also fulfilled by using a, preferably, highly reflective conducting film.

    摘要翻译： 公开了一种用于通过用外部电压调制放置在标准具腔中的薄膜铁电体的光学厚度来调制反射或透射光的强度的固态器件。 该器件通过选择大致平面的支撑衬底，优选硅或蓝宝石构成，以便与硅集成电路兼容。 由不同折射率材料的交替层组成的电介质叠层也被特别选择为与薄膜铁电体的后续生长兼容，以形成部分反射和部分透射的反射镜，随后是透明的导电层。 薄膜铁电体沉积在导电层上，随后是第二透明导电层和第二电介质叠层。 引线连接到导电层，然后连接到电压发生器。 在本发明的一个版本中，通过使用半透明导电膜来实现第二（顶部）导电层和电介质堆叠的功能。 在另一个版本中，第一（底部）导电层和电介质堆叠的功能也通过使用优选高反射导电膜来实现。

    Thin film ferroelectric light modulators
    2.
    发明授权
    Thin film ferroelectric light modulators 失效

    公开(公告)号：US06535321B2

    公开(公告)日：2003-03-18

    申请号：US10053862

    申请日：2002-01-22

    申请人： Feiling Wang ,  Gene H. Haertling

    发明人： Feiling Wang ,  Gene H. Haertling

    IPC分类号： G02F107

    CPC分类号： G02F1/21 ,  G02F1/055 ,  G02F1/19 ,  Y10T428/24942

    摘要： A solid state device used to modulate the intensity of reflected or transmitted light by modulating with an external voltage the optical thickness of a thin film ferroelectric placed in an etalon cavity is disclosed. The device is constructed by selecting a generally planar supporting substrate, preferably silicon or sapphire in order to be compatible with silicon integrated circuits. A dielectric stack consisting of alternating layers of different index of refraction materials, also specifically selected to be compatible with later growth of the thin film ferroelectric, is deposited thereon to form a partially reflective and partially transmitting mirror, followed by a transparent electrically conductive layer. The thin film ferroelectric is deposited on the conductive layer, followed by a second transparent conductive layer and a second dielectric stack. Leads are connected to the conductive layers and in turn to a voltage generator. In one version of the invention, the functions of both the second (top) electrically conductive layer and dielectric stack are fulfilled by using a semi-transparent conducting film. In another version, the functions of both the first (bottom) electrically conductive layer and dielectric stack are also fulfilled by using a, preferably, highly reflective conducting film.

    Thin film ferroelectric light modulators
    3.
    发明授权
    Thin film ferroelectric light modulators 有权

    公开(公告)号：US06411422B1

    公开(公告)日：2002-06-25

    申请号：US09798136

    申请日：2001-03-02

    申请人： Feiling Wang ,  Gene H. Haertling

    发明人： Feiling Wang ,  Gene H. Haertling

    IPC分类号： G02F107

    摘要： A solid state device used to modulate the intensity of reflected or transmitted light by modulating with an external voltage the optical thickness of a thin film ferroelectric placed in an etalon cavity is disclosed. The device is constructed by selecting a generally planar supporting substrate, preferably silicon or sapphire in order to be compatible with silicon integrated circuits. A dielectric stack consisting of alternating layers of different index of refraction materials, also specifically selected to be compatible with later growth of the thin film ferroelectric, is deposited thereon to form a partially reflective and partially transmitting mirror, followed by a transparent electrically conductive layer. The thin film ferroelectric is deposited on the conductive layer, followed by a second transparent conductive layer and a second dielectric stack. Leads are connected to the conductive layers and in turn to a voltage generator. In one version of the invention, the functions of both the second (top) electrically conductive layer and dielectric stack are fulfilled by using a semi-transparent conducting film. In another version, the functions of both the first (bottom) electrically conductive layer and dielectric stack are also fulfilled by using a, preferably, highly reflective conducting film.

    High-speed low-loss fiber-optic switches
    7.
    发明授权
    High-speed low-loss fiber-optic switches 失效
    高速低损耗光纤交换机

    公开(公告)号：US06229934B1

    公开(公告)日：2001-05-08

    申请号：US09158000

    申请日：1998-09-22

    申请人： Paul Melman ,  Yingyin Zou ,  Hua Jiang ,  Feiling Wang ,  Jing Zhao

    发明人： Paul Melman ,  Yingyin Zou ,  Hua Jiang ,  Feiling Wang ,  Jing Zhao

    IPC分类号： G02B626

    CPC分类号： G02B6/2848 ,  G02F1/31

    摘要： The invention provides a fiber-optic 2×2 switch using a dual-fiber 50:50 input coupler and a dual-fiber 50:50 output coupler. One fiber from each coupler makes contact to an inner transparent electrode on a planar layer of electro-optic material and the other fibers make contact to an outer transparent electrode on the layer. The electro-optic layer has its other side coated with a transparent electrode which is placed in optical contact with one end of a GRIN lens. The fibers are arranged so that the inner fibers are at conjugate points and the outer fibers also at conjugate points of the lens. The other end of the lens is coated with a mirror. Applying a voltage between either the inner or outer electrode changes the optical path length for the light from and to the fibers traveling through the material under the selected electrode causing the light from the two input fibers to be switched between the two output fibers. 2×N switches can be constructed by concatenating 2×2 switches. The switch can also be used as a modulator. A convenient fiber alignment method is described.

    摘要翻译： 本发明提供一种使用双光纤50:50输入耦合器和双光纤50:50输出耦合器的光纤2x2开关。 来自每个耦合器的一根光纤与电光材料的平面层上的内部透明电极接触，并且其它光纤与层上的外部透明电极接触。 电光层的另一侧涂有透明电极，该透明电极与GRIN透镜的一端放置成光学接触。 纤维布置成使得内纤维在共轭点处，外纤维也在透镜的共轭点处。 透镜的另一端涂有镜子。 在内部电极或外部电极之间施加电压改变来自穿过选定电极之下的材料的光的光路长度，从而使来自两个输入光纤的光在两个输出光纤之间切换。 2xN开关可以通过连接2x2开关构成。 开关也可以用作调制器。 描述了方便的光纤对准方法。