公开(公告)号：US08237463B1

公开(公告)日：2012-08-07

申请号：US13034758

申请日：2011-02-25

申请人： Fen Chen ,  Kai D. Feng ,  Zhong-Xiang He

发明人： Fen Chen ,  Kai D. Feng ,  Zhong-Xiang He

IPC分类号： H03K19/003

CPC分类号： H03K19/00307

摘要： Managing reliability of a circuit that includes a plurality of duplicate components, with less than all of the components being active at any time during circuit operation, where reliability is managed by operating, by the circuit, with a first set of components that includes a predefined number of components; selecting, without altering circuit performance and in accordance with a circuit reliability protocol, a second set of components with which to operate, including activating an inactive component and deactivating an active component of the first set of components; and operating, by the circuit, with the second set of components.

摘要翻译： 管理包括多个重复部件的电路的可靠性，其中小于所有组件在电路操作期间的任何时间处于活动状态，其中可靠性由电路通过第一组组件来管理，该组件包括预定义的 组件数量; 根据电路可靠性协议选择不改变电路性能的第二组组件，包括激活非活动组件和去激活第一组组件的活动组件; 并通过电路与第二组元件一起操作。

公开(公告)号：US20120218030A1

公开(公告)日：2012-08-30

申请号：US13034758

申请日：2011-02-25

申请人： Fen Chen ,  Kai D. Feng ,  Zhong-Xiang He

发明人： Fen Chen ,  Kai D. Feng ,  Zhong-Xiang He

IPC分类号： H03K19/003

CPC分类号： H03K19/00307

摘要： Managing reliability of a circuit that includes a plurality of duplicate components, with less than all of the components being active at any time during circuit operation, where reliability is managed by operating, by the circuit, with a first set of components that includes a predefined number of components; selecting, without altering circuit performance and in accordance with a circuit reliability protocol, a second set of components with which to operate, including activating an inactive component and deactivating an active component of the first set of components; and operating, by the circuit, with the second set of components.

摘要翻译： 管理包括多个重复部件的电路的可靠性，其中小于所有组件在电路操作期间的任何时间处于活动状态，其中可靠性由电路通过第一组组件来管理，该组件包括预定义的 组件数量; 根据电路可靠性协议选择不改变电路性能的第二组组件，包括激活非活动组件和去激活第一组组件的活动组件; 并通过电路与第二组元件一起操作。

公开(公告)号：US20110018575A1

公开(公告)日：2011-01-27

申请号：US12508111

申请日：2009-07-23

申请人： Fen Chen ,  Kai D. Feng ,  Zhong-Xiang He

发明人： Fen Chen ,  Kai D. Feng ,  Zhong-Xiang He

IPC分类号： G01R31/26 ,  G01R31/02

CPC分类号： G01R31/2621 ,  G01R31/2855 ,  G01R31/2894

摘要： The present invention provides a method. The method includes operating a plurality of field-effect-transistors (FETs) under a first operation condition; reversing an operation direction for at least one of the plurality of FETs for a brief period of time; measuring a second operation condition of the one of the plurality of FETs during the brief period of time; computing a difference between the second operation condition and a reference operation condition; and providing a reliability indicator based upon the difference between the second and the reference operation conditions, wherein the plurality of FETs are employed in a single integrated circuit (IC).

摘要翻译： 本发明提供一种方法。 该方法包括在第一操作条件下操作多个场效应晶体管（FET）; 短时间内反转多个FET中的至少一个的操作方向; 在短时间内测量所述多个FET中的一个的第二操作条件; 计算第二操作条件和参考操作条件之间的差; 以及基于所述第二参考操作条件和所述参考操作条件之间的差异提供可靠性指示器，其中所述多个FET用于单个集成电路（IC）。

公开(公告)号：US08362794B2

公开(公告)日：2013-01-29

申请号：US12508111

申请日：2009-07-23

申请人： Fen Chen ,  Kai D Feng ,  Zhong-Xiang He

发明人： Fen Chen ,  Kai D Feng ,  Zhong-Xiang He

IPC分类号： G01R31/02

CPC分类号： G01R31/2621 ,  G01R31/2855 ,  G01R31/2894

摘要： The present invention provides a method. The method includes operating a plurality of field-effect-transistors (FETs) under a first operation condition; reversing an operation direction for at least one of the plurality of FETs for a brief period of time; measuring a second operation condition of the one of the plurality of FETs during the brief period of time; computing a difference between the second operation condition and a reference operation condition; and providing a reliability indicator based upon the difference between the second and the reference operation conditions, wherein the plurality of FETs are employed in a single integrated circuit (IC).

摘要翻译： 本发明提供一种方法。 该方法包括在第一操作条件下操作多个场效应晶体管（FET）; 短时间内反转多个FET中的至少一个的操作方向; 在短时间内测量所述多个FET中的一个的第二操作条件; 计算第二操作条件和参考操作条件之间的差; 以及基于所述第二参考操作条件和所述参考操作条件之间的差异提供可靠性指示器，其中所述多个FET用于单个集成电路（IC）。

公开(公告)号：US08563336B2

公开(公告)日：2013-10-22

申请号：US12342430

申请日：2008-12-23

申请人： Fen Chen ,  Jeffrey P. Gambino ,  Zhong-Xiang He ,  Tom C. Lee ,  John C. Malinowski ,  Anthony K. Stamper

发明人： Fen Chen ,  Jeffrey P. Gambino ,  Zhong-Xiang He ,  Tom C. Lee ,  John C. Malinowski ,  Anthony K. Stamper

IPC分类号： H01L21/00

CPC分类号： H01L28/20 ,  H01C7/006 ,  H01C17/075 ,  H01L21/7685 ,  H01L23/5228 ,  H01L23/53295 ,  H01L24/11 ,  H01L28/24 ,  H01L2224/0231 ,  H01L2224/02313 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05181 ,  H01L2224/05546 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/013

摘要： Disclosed are methods for forming a thin film resistor and terminal bond pad simultaneously. A method includes simultaneously forming a terminal bond pad on a terminal wire and a thin film resistor on two other wires.

摘要翻译： 公开了同时形成薄膜电阻器和端子接合焊盘的方法。 一种方法包括在端子线上同时形成端子接合焊盘和在另外两条导线上形成薄膜电阻器。

公开(公告)号：US08497203B2

公开(公告)日：2013-07-30

申请号：US12856212

申请日：2010-08-13

申请人： Fen Chen ,  Zhong-Xiang He ,  Anthony K. Stamper

发明人： Fen Chen ,  Zhong-Xiang He ,  Anthony K. Stamper

IPC分类号： H01L21/4703

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L21/76834 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor structures with airgaps and/or metal linings and methods of manufacture are provided. The method of forming an airgap in a wiring level includes forming adjacent wires in a dielectric layer. The method further includes forming a masking layer coincident with the adjacent wire and forming a first layer on the masking layer to reduce a size of an opening formed in the masking layer between the adjacent wires. The method further includes removing exposed portions of the first layer and the dielectric layer to form trenches between the adjacent wires. The method further includes forming an interlevel dielectric layer upon the dielectric layer, where the interlevel dielectric layer is pinched off from filling the trenches so that an airgap is formed between the adjacent wires. A metal liner can also be formed in the trenches, prior to the formation of the airgap.

摘要翻译： 提供具有气隙和/或金属衬里和制造方法的半导体结构。 在布线层中形成气隙的方法包括在电介质层中形成相邻的布线。 该方法还包括形成与相邻导线重合的掩模层，并在掩模层上形成第一层以减小形成在相邻导线之间的掩模层中的开口的尺寸。 该方法还包括去除第一层和电介质层的暴露部分以在相邻导线之间形成沟槽。 所述方法还包括在所述电介质层上形成层间电介质层，其中夹层所述层间电介质层以填充所述沟槽，使得在相邻导线之间形成气隙。 在形成气隙之前，也可以在沟槽中形成金属衬垫。

公开(公告)号：US20120038037A1

公开(公告)日：2012-02-16

申请号：US12856212

申请日：2010-08-13

申请人： Fen Chen ,  Zhong-Xiang He ,  Anthony K. Stamper

发明人： Fen Chen ,  Zhong-Xiang He ,  Anthony K. Stamper

IPC分类号： H01L23/52 ,  H01L21/768

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L21/76834 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor structures with airgaps and/or metal linings and methods of manufacture are provided. The method of forming an airgap in a wiring level includes forming adjacent wires in a dielectric layer. The method further includes forming a masking layer coincident with the adjacent wire and forming a first layer on the masking layer to reduce a size of an opening formed in the masking layer between the adjacent wires. The method further includes removing exposed portions of the first layer and the dielectric layer to form trenches between the adjacent wires. The method further includes forming an interlevel dielectric layer upon the dielectric layer, where the interlevel dielectric layer is pinched off from filling the trenches so that an airgap is formed between the adjacent wires. A metal liner can also be formed in the trenches, prior to the formation of the airgap.

摘要翻译： 提供具有气隙和/或金属衬里和制造方法的半导体结构。 在布线层中形成气隙的方法包括在电介质层中形成相邻的布线。 该方法还包括形成与相邻导线重合的掩模层，并在掩模层上形成第一层以减小形成在相邻导线之间的掩模层中的开口的尺寸。 该方法还包括去除第一层和电介质层的暴露部分以在相邻导线之间形成沟槽。 所述方法还包括在所述电介质层上形成层间电介质层，其中夹层所述层间电介质层以填充所述沟槽，使得在相邻导线之间形成气隙。 在形成气隙之前，也可以在沟槽中形成金属衬垫。

公开(公告)号：US08917104B2

公开(公告)日：2014-12-23

申请号：US13222306

申请日：2011-08-31

申请人： Fen Chen ,  Roger A. Dufresne ,  Kai D. Feng ,  Richard J. St-Pierre

发明人： Fen Chen ,  Roger A. Dufresne ,  Kai D. Feng ,  Richard J. St-Pierre

IPC分类号： G01R31/3187 ,  G01R31/28

CPC分类号： G01R31/2858

摘要： A testing structure, system and method for monitoring electro-migration (EM) performance. A system is described that includes an array of testing structures, wherein each testing structure includes: an EM resistor having four point resistive measurement, wherein a first and second terminals provide current input and a third and fourth terminals provide a voltage measurement; a first transistor coupled to a first terminal of the EM resistor for supplying a test current; the voltage measurement obtained from a pair of switching transistors whose gates are controlled by a selection switch and whose drains are utilized to provide a voltage measurement across the third and fourth terminals. Also included is a decoder for selectively activating the selection switch for one of the array of testing structures; and a pair of outputs for outputting the voltage measurement of a selected testing structure.

摘要翻译： 用于监测电迁移（EM）性能的测试结构，系统和方法。 描述了包括测试结构阵列的系统，其中每个测试结构包括：具有四点电阻测量的EM电阻器，其中第一和第二端子提供电流输入，第三和第四端子提供电压测量; 耦合到所述EM电阻器的第一端子以提供测试电流的第一晶体管; 由一对开关晶体管获得的电压测量，其栅极由选择开关控制，并且其漏极用于在第三和第四端子处提供电压测量。 还包括用于选择性地激活测试结构阵列之一的选择开关的解码器; 以及用于输出所选择的测试结构的电压测量的一对输出。

公开(公告)号：US20080001620A1

公开(公告)日：2008-01-03

申请号：US11427798

申请日：2006-06-30

申请人： Fen Chen ,  Kai D. Feng ,  Robert J. Gauthier ,  Tom C. Lee

发明人： Fen Chen ,  Kai D. Feng ,  Robert J. Gauthier ,  Tom C. Lee

IPC分类号： H03K19/003

CPC分类号： H03K19/018571

摘要： A method for trimming impedance matching devices in high-speed circuits includes determining an electrical parameter associated with a first tantalum nitride (TaN) resistor used as an impedance matching device in the circuit under test, and comparing the determined electrical parameter associated with the first TaN resistor to a desired design value of the electrical parameter. The resistance value of the first TaN resistor is altered by application of a trimming voltage thereto, wherein the trimming voltage is based on a voltage-resistance characteristic curve of the first TaN resistor. It is then determined whether the altered resistance value of the first TaN resistor causes the electrical parameter to equal the desired design value thereof, and the altering of the resistance value of the first TaN resistor by application of a trimming voltage is repeated until the electrical parameter equals the desired design value thereof.

摘要翻译： 一种用于微调高速电路中的阻抗匹配装置的方法包括：确定与在被测电路中用作阻抗匹配装置的第一氮化钽（TaN）电阻相关联的电参数，并将确定的与第一TaN相关的电参数进行比较 电阻到所需的电参数设计值。 通过施加微调电压来改变第一TaN电阻器的电阻值，其中微调电压基于第一TaN电阻器的耐电压特性曲线。 然后确定第一TaN电阻器的改变的电阻值是否使电参数等于其期望的设计值，并且重复通过施加微调电压来改变第一TaN电阻器的电阻值，直到电参数 等于其期望的设计值。

公开(公告)号：US20090107220A1

公开(公告)日：2009-04-30

申请号：US11926241

申请日：2007-10-29

申请人： Fen Chen ,  Kai D. Feng

发明人： Fen Chen ,  Kai D. Feng

IPC分类号： G01N25/56

CPC分类号： G01N27/223

摘要： A design structure for an on-chip real-time moisture detection circuitry for monitoring ingress of moisture into an integrated circuit chip during the operational lifetime of the chip. The moisture detection circuitry includes one or more moisture-sensing units and a common moisture monitor for monitoring the state of each moisture-sensing units. The moisture monitor can be configured to provided a real-time moisture-detected signal for signaling that moisture ingress into the integrated circuit chip has occurred.

摘要翻译： 一种片上实时水分检测电路的设计结构，用于在芯片的使用寿命期间监测水分进入集成电路芯片的情况。 湿度检测电路包括一个或多个湿度感测单元和用于监测每个湿度感测单元的状态的公共湿度监视器。 水分监测器可以被配置为提供实时湿度检测信号，用于发信号通知已经发生湿气进入集成电路芯片。