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19 条记录 (耗时 0.022 秒)

    Radiation sensitive materials and devices made therewith
    1.
    发明授权
    Radiation sensitive materials and devices made therewith 失效
    辐射敏感材料和由此制成的设备

    公开(公告)号：US4996136A

    公开(公告)日：1991-02-26

    申请号：US316051

    申请日：1989-02-24

    申请人： Francis M. Houlihan ,  Elsa Reichmanis ,  Larry F. Thompson

    发明人： Francis M. Houlihan ,  Elsa Reichmanis ,  Larry F. Thompson

    IPC分类号： G03F7/039

    CPC分类号： G03F7/039 ,  Y10S430/146

    摘要： Sensitive deep ultraviolet resists are formed utilizing a material that undergoes decomposition to form an acid together with a polymer including a chain scission inducing monomer such as sulfonyl units and substituent that undergoes reaction to form an acidic moiety when subjected to the photogenerated species. An exemplary composition includes poly(t-butoxycarbonyloxystyrenesulfone) and 2,6-dinitrobenzyl-p-toluene sulfonate. The sulfonate decomposes to form sulfonic acid upon irradiation. This acid reacts with the polymer group to form an acid functionality while the sulfone moiety of the polymer induces scission. As a result, the irradiated portions of the resist material are soluble in ionic solvents while the unirradiated portions are not.

    摘要翻译： 敏感的深紫外线抗蚀剂是利用经历分解形成酸的材料与含有断链诱导单体如磺酰基单元的聚合物形成的物质，并且当经受光生物质时经历反应以形成酸性部分的取代基。 示例性的组合物包括聚（叔丁氧基羰基氧基苯乙烯）和2,6-二硝基苄基对甲苯磺酸盐。 在辐照时磺酸盐分解形成磺酸。 该酸与聚合物基团反应以形成酸官能团，而聚合物的砜部分诱导断裂。 结果，抗蚀剂材料的照射部分可溶于离子溶剂，而未照射部分则不溶解。

    Resist materials
    2.
    发明授权
    Resist materials 失效
    抵抗材料

    公开(公告)号：US5135838A

    公开(公告)日：1992-08-04

    申请号：US565074

    申请日：1990-08-09

    申请人： Francis M. Houlihan ,  Thomas X. Neenan ,  Elsa Reichmanis

    发明人： Francis M. Houlihan ,  Thomas X. Neenan ,  Elsa Reichmanis

    IPC分类号： G03F7/039

    CPC分类号： G03F7/039 ,  Y10S430/146

    摘要： A class of resist compositions sensitive to deep ultraviolet radiation includes a resin sensitive to acid and a composition that generates acid upon exposure to such radiation. A group of nitrobenzyl materials is particularly suitable for use as the acid generator.

    摘要翻译： 一类对深紫外线辐射敏感的抗蚀剂组合物包括对酸敏感的树脂和暴露于这种辐射时产生酸的组合物。 一组硝基苄基材料特别适合用作酸产生剂。

    Resist materials
    3.
    发明授权
    Resist materials 失效
    抵抗材料

    公开(公告)号：US5200544A

    公开(公告)日：1993-04-06

    申请号：US825341

    申请日：1992-01-24

    申请人： Francis M. Houlihan ,  Thomas X. Neenan ,  Elsa Reichmanis

    发明人： Francis M. Houlihan ,  Thomas X. Neenan ,  Elsa Reichmanis

    IPC分类号： G03F7/039

    CPC分类号： G03F7/039

    摘要： A class of resist compositions sensitive to deep ultraviolet radiation includes a resin sensitive to acid and a composition that generates acid upon exposure to such radiation. A group of nitrobenzyl materials is particularly suitable for use as the acid generator.

    摘要翻译： 一类对深紫外线辐射敏感的抗蚀剂组合物包括对酸敏感的树脂和暴露于这种辐射时产生酸的组合物。 一组硝基苄基材料特别适合用作酸产生剂。

    Positive-Working Photoimageable Bottom Antireflective Coating
    5.
    发明申请
    Positive-Working Photoimageable Bottom Antireflective Coating 有权
    正面照相底部防反射涂层

    公开(公告)号：US20110076626A1

    公开(公告)日：2011-03-31

    申请号：US12570923

    申请日：2009-09-30

    申请人： Munirathna Padmanaban ,  Srinivasan Chakrapani ,  Francis M. Houlihan ,  Shinji Miyazaki ,  Edward Ng ,  Mark O. Neisser

    发明人： Munirathna Padmanaban ,  Srinivasan Chakrapani ,  Francis M. Houlihan ,  Shinji Miyazaki ,  Edward Ng ,  Mark O. Neisser

    IPC分类号： G03F7/00 ,  G03C1/00

    CPC分类号： G03F7/091

    摘要： The invention relates to a photoimageable antireflective coating composition capable of forming a pattern by development in an aqueous alkaline solution, comprising, (i) a polymer A soluble in a coating solvent and comprises a chromophore, a crosslinking moiety, and optionally a cleavable group which under acid or thermal conditions produces a functionality which aids in the solubility of the polymer in an aqueous alkaline solution and; (ii) at least one photoacid generator; (iii) a crosslinking agent; (iv) optionally, a thermal acid generator; (v) a polymer B which is soluble in an aqueous alkaline solution prior to development, where polymer B is non-miscible with polymer A and soluble in the coating solvent, and; (vi) a coating solvent composition, and (vii) optionally, a quencher. The invention also relates to a process for imaging the antireflective coating.

    摘要翻译： 本发明涉及能够在碱性水溶液中通过显影形成图案的可光成像抗反射涂料组合物，其包含（i）可溶于涂布溶剂中的聚合物A，其包含发色团，交联部分和任选的可裂解基团， 在酸或热条件下产生有助于聚合物在碱性水溶液中的溶解度的功能; （ii）至少一种光致酸发生剂; （iii）交联剂; （iv）任选的热酸产生剂; （v）聚合物B，其在显影前可溶于碱性水溶液，其中聚合物B与聚合物A不可混溶并可溶于涂布溶剂中; （vi）涂料溶剂组合物，和（vii）任选的猝灭剂。 本发明还涉及用于对抗反射涂层进行成像的方法。

    Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
    6.
    发明授权
    Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof 有权
    用顶部涂层及其材料对深紫外光致抗蚀剂进行成像的工艺

    公开(公告)号：US07473512B2

    公开(公告)日：2009-01-06

    申请号：US11044305

    申请日：2005-01-27

    申请人： Francis M. Houlihan ,  Ralph R. Dammel ,  Andrew R. Romano ,  Raj Sakamuri

    发明人： Francis M. Houlihan ,  Ralph R. Dammel ,  Andrew R. Romano ,  Raj Sakamuri

    IPC分类号： G03F7/00 ,  G03F7/004

    CPC分类号： G03F7/2041 ,  G03F7/0046 ,  G03F7/11

    摘要： The present invention relates to a process for imaging deep ultraviolet (uv) photoresists with a topcoat using deep uv immersion lithography. The invention further relates to a topcoat composition comprising a polymer with at least one ionizable group having a pKa ranging from about −9 to about 11. The invention also relates to a process for imaging a photoresist with a top barrier coat to prevent contamination of the photoresist from environmental contaminants.

    摘要翻译： 本发明涉及一种使用深紫外浸没式光刻技术对具有顶涂层的深紫外（UV）光刻胶进行成像的方法。 本发明还涉及一种面漆组合物，其包含具有至少一个pKa在约-9至约11范围内的至少一个可离子化基团的聚合物。本发明还涉及一种使用顶部阻挡涂层对光致抗蚀剂进行成像的方法，以防止 光致抗蚀剂来自环境污染物。

    Photoresist composition for deep ultraviolet lithography
    9.
    发明授权
    Photoresist composition for deep ultraviolet lithography 失效
    用于深紫外光刻的光刻胶组合物

    公开(公告)号：US07351521B2

    公开(公告)日：2008-04-01

    申请号：US11716361

    申请日：2007-03-09

    申请人： Ralph R. Dammel ,  Raj Sakamuri ,  Francis M. Houlihan

    发明人： Ralph R. Dammel ,  Raj Sakamuri ,  Francis M. Houlihan

    IPC分类号： G03F7/30 ,  G03F7/021

    CPC分类号： G03F7/0395 ,  G03F7/0046

    摘要： The present invention relates to a photoresist composition comprising a photoacid generator and at least one polymer comprising at least one unit as described by structure 1, The invention also relates to a process for imaging the photoresist composition of the present invention, and to a process of making the polymer in the presence of an organic base.

    摘要翻译： 本发明涉及一种光致抗蚀剂组合物，其包含光致酸产生剂和至少一种包含至少一种如结构1所述的单元的聚合物。本发明还涉及用于使本发明的光致抗蚀剂组合物成像的方法，以及 使聚合物在有机碱存在下进行。

    Micro-lens array and method of making micro-lens array
    10.
    发明授权
    Micro-lens array and method of making micro-lens array 有权
    微透镜阵列及制作微透镜阵列的方法

    公开(公告)号：US07042645B2

    公开(公告)日：2006-05-09

    申请号：US10740600

    申请日：2003-12-22

    申请人： Francis M. Houlihan ,  Madanagopal V. Kunnavakkam ,  James A. Liddle ,  Omkaram Nalamasu

    发明人： Francis M. Houlihan ,  Madanagopal V. Kunnavakkam ,  James A. Liddle ,  Omkaram Nalamasu

    IPC分类号： G02B27/00

    CPC分类号： G02B3/0031 ,  G02B3/0056

    摘要： A micro-lens array and a method for making are described. The micro-lens array includes a base element and a plurality of lenses formed of an epoxy and including nanoparticles. The micro-lens array is formed from a master micro-lens array, which is placed within a replica micro-lens making assembly. The master micro-lens array is coated with an anti-stiction material prior to having an elastomeric material positioned over it and cured. Removal of the elastomeric material provides a plurality of cavities, which are filled with an epoxy including nanoparticles. Curing of the epoxy finishes the fabrication of the micro-lens array. The lenses of the micro-lens array are formed from a colloidal suspension of nanoparticles and resin.

    摘要翻译： 描述微透镜阵列和制造方法。 微透镜阵列包括基底元件和由环氧树脂形成并包括纳米颗粒的多个透镜。 微透镜阵列由放置在复制微透镜制造组件内的主微透镜阵列形成。 主微透镜阵列在将抗弹性材料定位在其上并固化之前用抗静电材料涂覆。 去除弹性体材料提供多个空腔，其填充有包括纳米颗粒的环氧树脂。 环氧树脂的固化完成了微透镜阵列的制造。 微透镜阵列的透镜由纳米颗粒和树脂的胶态悬浮液形成。