利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

30 条记录 (耗时 0.042 秒)

    Cleaning of semiconductor processing systems
    3.
    发明授权
    Cleaning of semiconductor processing systems 有权
    半导体处理系统的清洁

    公开(公告)号：US08603252B2

    公开(公告)日：2013-12-10

    申请号：US12298727

    申请日：2007-04-26

    申请人： Frank Dimeo ,  James Dietz ,  W. Karl Olander ,  Robert Kaim ,  Steven Bishop ,  Jeffrey W. Neuner ,  Jose Arno ,  Paul J. Marganski ,  Joseph D. Sweeney ,  David Eldridge ,  Sharad Yedave ,  Oleg Byl ,  Gregory T. Stauf

    发明人： Frank Dimeo ,  James Dietz ,  W. Karl Olander ,  Robert Kaim ,  Steven Bishop ,  Jeffrey W. Neuner ,  Jose Arno ,  Paul J. Marganski ,  Joseph D. Sweeney ,  David Eldridge ,  Sharad Yedave ,  Oleg Byl ,  Gregory T. Stauf

    IPC分类号： B08B7/00

    CPC分类号： C23C14/564 ,  C23C16/4405 ,  H01J37/32412 ,  H01J37/32862

    摘要： A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF2, XeF4, XeF6, NF3, IF5, IF7, SF6, C2F6, F2, CF4, KrF2, Cl2, HCl, ClF3, ClO2, N2F4, N2F2, N3F, NFH2, NH2F, HOBr, Br2, C3F8, C4F8, C5F8, CHF3, CH2F2, CH3F, COF2, HF, C2HF5, C2H2F4, C2H3F3, C2H4F2, C2H5F, C3F6, and organochlorides such as COCl2, CCl4, CHCl3, CH2Cl2 and CH3Cl.

    摘要翻译： 一种清洁残留物的方法和装置，用于制造微电子装置中使用的半导体处理系统的组件。 为了有效地除去残留物，将组分与气相反应性材料接触足够的时间和足够的条件以至少部分地除去残余物。 当残留物和构成组分的材料不同时，气相反应性材料与残余物选择性反应，并与构成离子注入机的组分的材料具有最低的反应性。 当残留物和构成组分的材料相同时，气相反应性材料可以与残留物和组分部分反应。 使用的特别优选的气相反应性材料包括气态化合物如XeF 2，XeF 4，XeF 6，NF 3，IF 5，IF 7，SF 6，C 2 F 6，F 2，CF 4，KrF 2，Cl 2，HCl，ClF 3，ClO 2，N 2 F 4，N 2 F 2，N 3 F， ，NH2F，HOBr，Br2，C3F8，C4F8，C5F8，CHF3，CH2F2，CH3F，COF2，HF，C2HF5，C2H2F4，C2H3F3，C2H4F2，C2H5F，C3F6和有机氯化物，如COCl2，CCl4，CHCl3，CH2Cl2和CH3Cl。

    CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS
    8.
    发明申请
    CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS 有权
    半导体加工系统的清洁

    公开(公告)号：US20100154835A1

    公开(公告)日：2010-06-24

    申请号：US12298727

    申请日：2007-04-26

    申请人： Frank Dimeo ,  James Dietz ,  Karl W. Olander ,  Robert Kaim ,  Steven Bishop ,  Jeffrey W. Neuner ,  Jose Arno ,  Paul J. Marganski ,  Joseph D. Sweeney ,  David Eldridge ,  Sharad Yedave ,  Oleg Byl ,  Gregory T. Stauf

    发明人： Frank Dimeo ,  James Dietz ,  Karl W. Olander ,  Robert Kaim ,  Steven Bishop ,  Jeffrey W. Neuner ,  Jose Arno ,  Paul J. Marganski ,  Joseph D. Sweeney ,  David Eldridge ,  Sharad Yedave ,  Oleg Byl ,  Gregory T. Stauf

    IPC分类号： B08B5/00

    CPC分类号： C23C14/564 ,  C23C16/4405 ,  H01J37/32412 ,  H01J37/32862

    摘要： A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF2, XeF4, XeF6, NF3, IF5, IF7, SF6, C2F6, F2, CF4, KrF2, Cl2, HCl, ClF3, ClO2, N2F4, N2F2, N3F, NFH2, NH2F, HOBr, Br2, C3F8, C4F8, C5F8, CHF3, CH2F2, CH3F, COF2, HF, C2HF5, C2H2F4, C2H3F3, C2H4F2, C2H5F, C3F6, and organochlorides such as COCl2, CCl4, CHCl3, CH2Cl2 and CH3Cl.

    摘要翻译： 一种清洁残留物的方法和装置，用于制造微电子装置中使用的半导体处理系统的组件。 为了有效地除去残留物，将组分与气相反应性材料接触足够的时间和足够的条件以至少部分地除去残余物。 当残留物和构成组分的材料不同时，气相反应性材料与残余物选择性反应，并与构成离子注入机的组分的材料具有最低的反应性。 当残留物和构成组分的材料相同时，气相反应性材料可以与残留物和组分部分反应。 使用的特别优选的气相反应性材料包括气态化合物如XeF 2，XeF 4，XeF 6，NF 3，IF 5，IF 7，SF 6，C 2 F 6，F 2，CF 4，KrF 2，Cl 2，HCl，ClF 3，ClO 2，N 2 F 4，N 2 F 2，N 3 F， ，NH2F，HOBr，Br2，C3F8，C4F8，C5F8，CHF3，CH2F2，CH3F，COF2，HF，C2HF5，C2H2F4，C2H3F3，C2H4F2，C2H5F，C3F6和有机氯化物，如COCl2，CCl4，CHCl3，CH2Cl2和CH3Cl。

    Novel methods for cleaning ion implanter components
    9.
    发明申请
    Novel methods for cleaning ion implanter components 有权
    清洗离子注入机组件的新方法

    公开(公告)号：US20060086376A1

    公开(公告)日：2006-04-27

    申请号：US10973673

    申请日：2004-10-26

    申请人： Frank Dimeo ,  James Dietz ,  W. Olander ,  Robert Kaim ,  Steven Bishop ,  Jeffrey Neuner

    发明人： Frank Dimeo ,  James Dietz ,  W. Olander ,  Robert Kaim ,  Steven Bishop ,  Jeffrey Neuner

    IPC分类号： B08B6/00 ,  B08B9/00

    CPC分类号： C23G5/00 ,  C23C14/564 ,  H01J37/08 ,  H01J37/32862 ,  H01J2237/022 ,  H01J2237/31701

    摘要： A method and apparatus for cleaning residue from components of an ion source region of an ion implanter used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive halide composition for sufficient time and under sufficient conditions to at least partially remove the residue. The gas-phase reactive halide composition is chosen to react selectively with the residue, while not reacting with the components of the ion source region or the vacuum chamber.

    摘要翻译： 一种用于清洁用于制造微电子器件的离子注入机的离子源区域的组分的残留物的方法和装置。 为了有效地除去残留物，将组分与气相反应性卤化物组合物接触足够的时间并在足够的条件下至少部分地除去残余物。 选择气相反应性卤化物组合物与残余物选择性反应，而不与离子源区域或真空室的组分反应。