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    CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS
    1.
    发明申请
    CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS 有权
    半导体加工系统的清洁

    公开(公告)号：US20100154835A1

    公开(公告)日：2010-06-24

    申请号：US12298727

    申请日：2007-04-26

    申请人： Frank Dimeo ,  James Dietz ,  Karl W. Olander ,  Robert Kaim ,  Steven Bishop ,  Jeffrey W. Neuner ,  Jose Arno ,  Paul J. Marganski ,  Joseph D. Sweeney ,  David Eldridge ,  Sharad Yedave ,  Oleg Byl ,  Gregory T. Stauf

    发明人： Frank Dimeo ,  James Dietz ,  Karl W. Olander ,  Robert Kaim ,  Steven Bishop ,  Jeffrey W. Neuner ,  Jose Arno ,  Paul J. Marganski ,  Joseph D. Sweeney ,  David Eldridge ,  Sharad Yedave ,  Oleg Byl ,  Gregory T. Stauf

    IPC分类号： B08B5/00

    CPC分类号： C23C14/564 ,  C23C16/4405 ,  H01J37/32412 ,  H01J37/32862

    摘要： A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF2, XeF4, XeF6, NF3, IF5, IF7, SF6, C2F6, F2, CF4, KrF2, Cl2, HCl, ClF3, ClO2, N2F4, N2F2, N3F, NFH2, NH2F, HOBr, Br2, C3F8, C4F8, C5F8, CHF3, CH2F2, CH3F, COF2, HF, C2HF5, C2H2F4, C2H3F3, C2H4F2, C2H5F, C3F6, and organochlorides such as COCl2, CCl4, CHCl3, CH2Cl2 and CH3Cl.

    摘要翻译： 一种清洁残留物的方法和装置，用于制造微电子装置中使用的半导体处理系统的组件。 为了有效地除去残留物，将组分与气相反应性材料接触足够的时间和足够的条件以至少部分地除去残余物。 当残留物和构成组分的材料不同时，气相反应性材料与残余物选择性反应，并与构成离子注入机的组分的材料具有最低的反应性。 当残留物和构成组分的材料相同时，气相反应性材料可以与残留物和组分部分反应。 使用的特别优选的气相反应性材料包括气态化合物如XeF 2，XeF 4，XeF 6，NF 3，IF 5，IF 7，SF 6，C 2 F 6，F 2，CF 4，KrF 2，Cl 2，HCl，ClF 3，ClO 2，N 2 F 4，N 2 F 2，N 3 F， ，NH2F，HOBr，Br2，C3F8，C4F8，C5F8，CHF3，CH2F2，CH3F，COF2，HF，C2HF5，C2H2F4，C2H3F3，C2H4F2，C2H5F，C3F6和有机氯化物，如COCl2，CCl4，CHCl3，CH2Cl2和CH3Cl。

    Cleaning of semiconductor processing systems
    2.
    发明授权
    Cleaning of semiconductor processing systems 有权
    半导体处理系统的清洁

    公开(公告)号：US08603252B2

    公开(公告)日：2013-12-10

    申请号：US12298727

    申请日：2007-04-26

    申请人： Frank Dimeo ,  James Dietz ,  W. Karl Olander ,  Robert Kaim ,  Steven Bishop ,  Jeffrey W. Neuner ,  Jose Arno ,  Paul J. Marganski ,  Joseph D. Sweeney ,  David Eldridge ,  Sharad Yedave ,  Oleg Byl ,  Gregory T. Stauf

    发明人： Frank Dimeo ,  James Dietz ,  W. Karl Olander ,  Robert Kaim ,  Steven Bishop ,  Jeffrey W. Neuner ,  Jose Arno ,  Paul J. Marganski ,  Joseph D. Sweeney ,  David Eldridge ,  Sharad Yedave ,  Oleg Byl ,  Gregory T. Stauf

    IPC分类号： B08B7/00

    CPC分类号： C23C14/564 ,  C23C16/4405 ,  H01J37/32412 ,  H01J37/32862

    摘要： A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF2, XeF4, XeF6, NF3, IF5, IF7, SF6, C2F6, F2, CF4, KrF2, Cl2, HCl, ClF3, ClO2, N2F4, N2F2, N3F, NFH2, NH2F, HOBr, Br2, C3F8, C4F8, C5F8, CHF3, CH2F2, CH3F, COF2, HF, C2HF5, C2H2F4, C2H3F3, C2H4F2, C2H5F, C3F6, and organochlorides such as COCl2, CCl4, CHCl3, CH2Cl2 and CH3Cl.

    摘要翻译： 一种清洁残留物的方法和装置，用于制造微电子装置中使用的半导体处理系统的组件。 为了有效地除去残留物，将组分与气相反应性材料接触足够的时间和足够的条件以至少部分地除去残余物。 当残留物和构成组分的材料不同时，气相反应性材料与残余物选择性反应，并与构成离子注入机的组分的材料具有最低的反应性。 当残留物和构成组分的材料相同时，气相反应性材料可以与残留物和组分部分反应。 使用的特别优选的气相反应性材料包括气态化合物如XeF 2，XeF 4，XeF 6，NF 3，IF 5，IF 7，SF 6，C 2 F 6，F 2，CF 4，KrF 2，Cl 2，HCl，ClF 3，ClO 2，N 2 F 4，N 2 F 2，N 3 F， ，NH2F，HOBr，Br2，C3F8，C4F8，C5F8，CHF3，CH2F2，CH3F，COF2，HF，C2HF5，C2H2F4，C2H3F3，C2H4F2，C2H5F，C3F6和有机氯化物，如COCl2，CCl4，CHCl3，CH2Cl2和CH3Cl。

    Liquid delivery MOCVD process for deposition of high frequency dielectric materials
    4.
    发明授权
    Liquid delivery MOCVD process for deposition of high frequency dielectric materials 有权
    用于沉积高频电介质材料的液体输送MOCVD工艺

    公开(公告)号：US06277436B1

    公开(公告)日：2001-08-21

    申请号：US09216673

    申请日：1998-12-18

    申请人： Gregory T. Stauf ,  Jeffrey F. Roeder ,  Thomas H. Baum

    发明人： Gregory T. Stauf ,  Jeffrey F. Roeder ,  Thomas H. Baum

    IPC分类号： C23C1640

    CPC分类号： H01L28/55 ,  C23C16/40 ,  C23C16/4481 ,  H01L21/31691 ,  H01L27/10852

    摘要： A liquid delivery MOCVD method for deposition of dielectric materials such as (Ba,Sr) titanates and (Zr,Sn) titanates, in which metal source compounds are dissolved or suspended in solvent and flash vaporized at temperatures of from about 100° C. to about 300° C. and carried via a carrier gas such as argon, nitrogen, helium, ammonia or the like, into a chemical vapor deposition reactor wherein the precursor vapor is mixed with an oxidizing co-reactant gas such as oxygen, ozone, N2O, etc., to deposit the high dielectric metal oxide film on the substrate at a temperature of from about 400° C. to about 1200° C. at a chemical vapor deposition chamber pressure of from about 0.1 torr to about 760 torr. Such process may for example be employed to form a (Ba,Sr) titanate dielectric material wherein at least 60 atomic % of the total metal content of the oxide is titanium. The high dielectric material of the invention may be used to form capacitive microelectronic device structures for applications such as dynamic random access memories and high frequency capacitors.

    摘要翻译： 用于沉积诸如（Ba，Sr）钛酸盐和（Zr，Sn）钛酸盐的电介质材料的液体输送MOCVD方法，其中金属源化合物溶解或悬浮在溶剂中并在约100℃的温度下闪蒸至 约300℃，并通过诸如氩气，氮气，氦气，氨等的载气进入化学气相沉积反应器，其中前体蒸气与氧气，臭氧，N 2 O等氧化性共反应气体混合 等等，以在约0.1托至约760托的化学气相沉积室压力下在约400℃至约1200℃的温度下将高介电金属氧化物膜沉积在基底上。 这种方法可以例如用于形成（Ba，Sr）钛酸盐电介质材料，其中氧化物的总金属含量的至少60原子％为钛。 本发明的高介电材料可用于形成用于例如动态随机存取存储器和高频电容器的应用的电容微电子器件结构。