利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

46 条记录 (耗时 0.033 秒)

    Cleaning of semiconductor processing systems
    3.
    发明授权
    Cleaning of semiconductor processing systems 有权
    半导体处理系统的清洁

    公开(公告)号：US08603252B2

    公开(公告)日：2013-12-10

    申请号：US12298727

    申请日：2007-04-26

    申请人： Frank Dimeo ,  James Dietz ,  W. Karl Olander ,  Robert Kaim ,  Steven Bishop ,  Jeffrey W. Neuner ,  Jose Arno ,  Paul J. Marganski ,  Joseph D. Sweeney ,  David Eldridge ,  Sharad Yedave ,  Oleg Byl ,  Gregory T. Stauf

    发明人： Frank Dimeo ,  James Dietz ,  W. Karl Olander ,  Robert Kaim ,  Steven Bishop ,  Jeffrey W. Neuner ,  Jose Arno ,  Paul J. Marganski ,  Joseph D. Sweeney ,  David Eldridge ,  Sharad Yedave ,  Oleg Byl ,  Gregory T. Stauf

    IPC分类号： B08B7/00

    CPC分类号： C23C14/564 ,  C23C16/4405 ,  H01J37/32412 ,  H01J37/32862

    摘要： A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF2, XeF4, XeF6, NF3, IF5, IF7, SF6, C2F6, F2, CF4, KrF2, Cl2, HCl, ClF3, ClO2, N2F4, N2F2, N3F, NFH2, NH2F, HOBr, Br2, C3F8, C4F8, C5F8, CHF3, CH2F2, CH3F, COF2, HF, C2HF5, C2H2F4, C2H3F3, C2H4F2, C2H5F, C3F6, and organochlorides such as COCl2, CCl4, CHCl3, CH2Cl2 and CH3Cl.

    摘要翻译： 一种清洁残留物的方法和装置，用于制造微电子装置中使用的半导体处理系统的组件。 为了有效地除去残留物，将组分与气相反应性材料接触足够的时间和足够的条件以至少部分地除去残余物。 当残留物和构成组分的材料不同时，气相反应性材料与残余物选择性反应，并与构成离子注入机的组分的材料具有最低的反应性。 当残留物和构成组分的材料相同时，气相反应性材料可以与残留物和组分部分反应。 使用的特别优选的气相反应性材料包括气态化合物如XeF 2，XeF 4，XeF 6，NF 3，IF 5，IF 7，SF 6，C 2 F 6，F 2，CF 4，KrF 2，Cl 2，HCl，ClF 3，ClO 2，N 2 F 4，N 2 F 2，N 3 F， ，NH2F，HOBr，Br2，C3F8，C4F8，C5F8，CHF3，CH2F2，CH3F，COF2，HF，C2HF5，C2H2F4，C2H3F3，C2H4F2，C2H5F，C3F6和有机氯化物，如COCl2，CCl4，CHCl3，CH2Cl2和CH3Cl。

    Boron Ion Implantation Using Alternative Fluorinated Boron Precursors, and Formation of Large Boron Hydrides for Implanation
    4.
    发明申请
    Boron Ion Implantation Using Alternative Fluorinated Boron Precursors, and Formation of Large Boron Hydrides for Implanation 有权
    使用替代氟化硼前体的硼离子注入和大型硼氢化物的形成

    公开(公告)号：US20080248636A1

    公开(公告)日：2008-10-09

    申请号：US12065503

    申请日：2006-08-30

    申请人： W. Karl Olander ,  Jose I. Arno ,  Robert Kaim

    发明人： W. Karl Olander ,  Jose I. Arno ,  Robert Kaim

    IPC分类号： H01L21/225 ,  C09K3/00 ,  C01B35/06 ,  C01B35/08 ,  C01B35/10 ,  C07F5/02

    CPC分类号： H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/082 ,  H01L21/26513 ,  H01L21/2658

    摘要： Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.

    摘要翻译： 使用比三氟化硼更容易裂解的含氟含硼掺杂剂物质注入含硼离子的方法。 一种制造半导体器件的方法，包括使用比三氟化硼更容易切割的氟化含硼掺杂物物种注入含硼离子。 还公开了用于提供硼氢化物前体的体系，以及形成硼氢化物前体的方法和用于供应硼氢化物前体的方法。 在本发明的一个实施方案中，为了制造半导体产品例如集成电路，产生用于簇硼注入的硼氢化物前体。

    Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
    5.
    发明授权
    Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation 有权
    使用替代氟化硼前体的硼离子注入，以及用于植入的大的硼氢化物的形成

    公开(公告)号：US08389068B2

    公开(公告)日：2013-03-05

    申请号：US12913757

    申请日：2010-10-27

    申请人： W. Karl Olander ,  Jose I. Arno ,  Robert Kaim

    发明人： W. Karl Olander ,  Jose I. Arno ,  Robert Kaim

    IPC分类号： C23C14/48 ,  C23C14/06 ,  H01L21/04 ,  H01L21/425 ,  C23C14/16

    CPC分类号： H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/082 ,  H01L21/26513 ,  H01L21/2658

    摘要： Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.

    摘要翻译： 使用比三氟化硼更容易裂解的含氟含硼掺杂剂物质注入含硼离子的方法。 一种制造半导体器件的方法，包括使用比三氟化硼更容易切割的氟化含硼掺杂物物种注入含硼离子。 还公开了用于提供硼氢化物前体的体系，以及形成硼氢化物前体的方法和用于供应硼氢化物前体的方法。 在本发明的一个实施方案中，为了制造半导体产品例如集成电路，产生用于簇硼注入的硼氢化物前体。

    Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
    6.
    发明授权
    Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation 有权
    使用替代氟化硼前体的硼离子注入，以及用于植入的大的硼氢化物的形成

    公开(公告)号：US07943204B2

    公开(公告)日：2011-05-17

    申请号：US12065503

    申请日：2006-08-30

    申请人： W. Karl Olander ,  Jose I. Arno ,  Robert Kaim

    发明人： W. Karl Olander ,  Jose I. Arno ,  Robert Kaim

    IPC分类号： C23C14/48 ,  H01L21/425 ,  C23C16/48

    CPC分类号： H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/082 ,  H01L21/26513 ,  H01L21/2658

    摘要： Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.

    摘要翻译： 使用比三氟化硼更容易裂解的含氟含硼掺杂剂物质注入含硼离子的方法。 一种制造半导体器件的方法，包括使用比三氟化硼更容易切割的氟化含硼掺杂物物种注入含硼离子。 还公开了用于提供硼氢化物前体的体系，以及形成硼氢化物前体的方法和用于供应硼氢化物前体的方法。 在本发明的一个实施方案中，为了制造半导体产品例如集成电路，产生用于簇硼注入的硼氢化物前体。

    BORON ION IMPLANTATION USING ALTERNATIVE FLUORINATED BORON PRECURSORS, AND FORMATION OF LARGE BORON HYDRIDES FOR IMPLANTATION
    7.
    发明申请
    BORON ION IMPLANTATION USING ALTERNATIVE FLUORINATED BORON PRECURSORS, AND FORMATION OF LARGE BORON HYDRIDES FOR IMPLANTATION 有权
    使用替代性氟化硼前体的硼离子植入和形成用于植入的大量硼氢化合物

    公开(公告)号：US20110065268A1

    公开(公告)日：2011-03-17

    申请号：US12913757

    申请日：2010-10-27

    申请人： W. Karl Olander ,  Jose I. Arno ,  Robert Kaim

    发明人： W. Karl Olander ,  Jose I. Arno ,  Robert Kaim

    IPC分类号： H01L21/265

    CPC分类号： H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/082 ,  H01L21/26513 ,  H01L21/2658

    摘要： Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.

    摘要翻译： 使用比三氟化硼更容易裂解的含氟含硼掺杂剂物质注入含硼离子的方法。 一种制造半导体器件的方法，包括使用比三氟化硼更容易切割的氟化含硼掺杂物物种注入含硼离子。 还公开了用于提供硼氢化物前体的体系，以及形成硼氢化物前体的方法和用于供应硼氢化物前体的方法。 在本发明的一个实施方案中，为了制造半导体产品例如集成电路，产生用于簇硼注入的硼氢化物前体。

    Delivery of Low Pressure Dopant Gas to a High Voltage Ion Source
    8.
    发明申请
    Delivery of Low Pressure Dopant Gas to a High Voltage Ion Source 审中-公开
    将低压掺杂气体输送到高电压离子源

    公开(公告)号：US20080220596A1

    公开(公告)日：2008-09-11

    申请号：US12065471

    申请日：2006-08-29

    申请人： W. Karl Olander ,  Jose I. Arno ,  Robert Kaim

    发明人： W. Karl Olander ,  Jose I. Arno ,  Robert Kaim

    IPC分类号： H01L21/265 ,  H01J37/317 ,  H01J37/08

    CPC分类号： H01J37/08 ,  H01J27/02 ,  H01J37/3172 ,  H01J2237/0203

    摘要： A system for delivery of low-pressure dopant gas to a high-voltage ion source in the doping of semiconductor substrates, in which undesired ionization of the gas is suppressed prior to entry into the high-voltage ion source, by modulating electron energy upstream of the high-voltage ion source so that electron acceleration effects are reduced to below a level supporting an electronic ionization cascade. The gas delivery system in a specific application includes a gas flow passage, a voltage generator electrically coupled with at least a portion of the gas flow passage to impose an electric field thereon, and an obstructive structure that is deployed to modulate acceleration length of electrons of the low-pressure gas in relation to ionization potential of the gas, to suppress ionization in the gas flow passage.

    摘要翻译： 一种用于在半导体衬底的掺杂中向高电压离子源传送低压掺杂气体的系统，其中在进入高压离子源之前，气体的不期望的电离被抑制，通过调制 高电压离子源，使得电子加速效应降低到低于支持电子离子化级联的水平。 具体应用中的气体输送系统包括气体流动通道，与气体流动通道的至少一部分电耦合以在其上施加电场的电压发生器，以及阻塞结构，其被展开以调制电子的加速度长度 相对于气体的电离电位的低压气体，抑制气体流路中的电离。

    ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMS
    10.
    发明申请
    ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
    半导体加工系统中的离子源清洁

    公开(公告)号：US20110259366A1

    公开(公告)日：2011-10-27

    申请号：US12867245

    申请日：2009-02-11

    申请人： Joseph D. Sweeney ,  Sharad N. Yedave ,  Oleg Byl ,  Robert Kaim ,  David Eldridge ,  Steven Sergi ,  Lin Feng ,  Steven E. Bishop ,  W. Karl Olander ,  Ying Tang

    发明人： Joseph D. Sweeney ,  Sharad N. Yedave ,  Oleg Byl ,  Robert Kaim ,  David Eldridge ,  Steven Sergi ,  Lin Feng ,  Steven E. Bishop ,  W. Karl Olander ,  Ying Tang

    IPC分类号： B08B7/00 ,  H01L21/265 ,  B08B5/00

    CPC分类号： H01J37/3171 ,  C23C14/48 ,  C23C14/54 ,  C23C14/564 ,  H01J37/08 ,  H01J37/16 ,  H01J37/18 ,  H01J2237/082 ,  H01J2237/22

    摘要： Cleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.

    摘要翻译： 使用能够在电弧室的离子源中生长/蚀刻细丝的反应性清洁剂来清洁离子注入系统或其组分，通过适当地控制电弧室中的温度以实现所需的长丝生长或替代的细丝蚀刻 。 还描述了使用诸如XeFx，WFx，AsFx，PFx和TaFx的反应性气体，其中x具有化学计量学上适当的值或值范围，用于清除离子注入器或植入物的组分的原位或非原生境 清洁布置，在环境温度，升高的温度或等离子体条件下。 在特定的反应性清洁剂中，BrF3被描述为用于在原位或非原位清洁装置中清洁离子注入系统或其组分。 还描述了一种清洁离子注入系统的前沿以从所述前线至少部分去除电离相关沉积物的方法，包括使所述前沿与清洁气体接触，其中所述清洁气体与所述沉积物化学反应。 还描述了改进离子注入系统的性能和延长寿命的方法，包括使阴极与气体混合物接触。