Semiconductor package and fabrication method
    1.
    发明申请
    Semiconductor package and fabrication method 审中-公开
    半导体封装及制造方法

    公开(公告)号:US20060099733A1

    公开(公告)日:2006-05-11

    申请号:US10985312

    申请日:2004-11-09

    CPC classification number: H01L21/50 B81C1/00269 B81C2203/0118 H01L21/6835

    Abstract: The present invention provides a first wafer and a second wafer having a device. A separation layer is formed on the first wafer. A cap is formed on the separation layer. The cap and the second wafer are bonded using a gasket. The first wafer is separated from the cap to form the semiconductor package comprised of the cap, the gasket, and the second wafer.

    Abstract translation: 本发明提供了具有装置的第一晶片和第二晶片。 在第一晶片上形成分离层。 在分离层上形成盖。 盖和第二晶片使用垫圈结合。 第一晶片与盖分离以形成由盖,垫圈和第二晶片组成的半导体封装。

    METHOD FOR PLACING METAL CONTACTS UNDERNEATH FBAR RESONATORS
    3.
    发明申请
    METHOD FOR PLACING METAL CONTACTS UNDERNEATH FBAR RESONATORS 有权
    用于放置金属接触器的管道FBAR谐振器的方法

    公开(公告)号:US20070001544A1

    公开(公告)日:2007-01-04

    申请号:US11174364

    申请日:2005-06-30

    Applicant: Frank Geefay

    Inventor: Frank Geefay

    CPC classification number: H03H9/173 H03H3/02 H03H9/0547 H03H2003/021

    Abstract: A device includes a device substrate defining a pit in a topside of the device substrate, a film bulk-wave acoustic resonator (FBAR) mounted over the pit on the device substrate, a first contact pad on a backside of the device substrate that is coupled to a bottom electrode of the FBAR, and a second contact pad on the backside of the device substrate that is coupled to a top electrode of the FBAR.

    Abstract translation: 一种器件包括在器件衬底的顶侧中限定凹坑的器件衬底,安装在器件衬底上的凹坑上的膜体波声共振器(FBAR),在器件衬底背面的第一接触焊盘, 到FBAR的底部电极,以及耦合到FBAR的顶部电极的器件衬底的背面上的第二接触焊盘。

    Method for making contact through via contact to an offset contactor inside a cap for the wafer level packaging of FBAR chips
    4.
    发明申请
    Method for making contact through via contact to an offset contactor inside a cap for the wafer level packaging of FBAR chips 审中-公开
    用于通过通孔接触接触到用于FBAR芯片的晶片级封装的盖内的偏移接触器的方法

    公开(公告)号:US20070004079A1

    公开(公告)日:2007-01-04

    申请号:US11173367

    申请日:2005-06-30

    CPC classification number: H03H9/105 H01L21/76898 H03H9/10

    Abstract: A device package includes a device substrate and a cap mounted on the device substrate. The device substrate includes a contact pad. The cap defines a via with a slightly sloped sidewall through the cap, a contactor extending from an interior surface of the cap, a contactor pad over the contactor, a via pad on the interior surface of the cap over the via and coupled to the contactor pad, and a via contact over the exterior surface of the cap and in the via coupled to the via pad. The contactor is offset from the via. When the cap is mounted on the device substrate, the contactor pad on the contactor is pressed and cold welded onto the contact pad on the device substrate.

    Abstract translation: 器件封装包括器件衬底和安装在器件衬底上的帽。 器件衬底包括接触焊盘。 所述盖限定了通过所述盖具有稍微倾斜的侧壁的通孔,从所述盖的内表面延伸的接触器,所述接触器上的接触器垫,所述盖的内表面上的通孔垫在所述通孔上并且联接到所述接触器 垫,以及在盖的外表面上的通孔接触件和连接到通孔垫的通孔中。 接触器偏离通孔。 当盖安装在设备基板上时,接触器上的接触器垫被压制并冷焊在设备基板上的接触垫上。

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