摘要:
A method for assembling integrated circuit (IC) devices includes dispensing a die attach adhesive onto a surface of a workpiece using a die bonding system, and placing an IC die on the die attach adhesive at surface of the workpiece to form an IC device. A pre-cure bond line thickness (pre-cure BLT) value is automatically optically measured for the die attach adhesive. The IC device is unloaded from the die bonding system after automatically optically measuring. The method can include comparing the pre-cure BLT value to a pre-cure BLT specification range, and if the pre-cure BLT value is outside the pre-cure BLT specification range, adjusting at least one die attach adhesive dispensing parameter based on the pre-cure BLT value for subsequent assembling. The adjusting can be automatic adjusting and the adjustment can be to the Z height parameter of the bond arm.
摘要:
The invention relates to microelectronic semiconductor chip assemblies having vertically stacked layers. In a disclosed example of a preferred embodiment, a vertically stacked semiconductor chip assembly includes a first semiconductor chip affixed to the surface of a substrate. A laminated interposing layer therebetween includes a first adhesive material and a second adhesive material, at least one of the adhesive materials adapted to capturing debris. Methods are disclosed for making a vertically stacked semiconductor chip assemblies by joining first and second adhesive materials to form a laminated interposing layer between a first chip and second chip or substrate. In preferred embodiments of the invention, the interposing layer includes polyimide film and one adhesive material of relatively low elasticity, and another adhesive material having relatively high elasticity.
摘要:
A method for die bonding includes positioning a dispenser in a die bonding apparatus, wherein the dispenser includes a reservoir having bonding adhesive therein including particles and a liquid carrier. The dispenser is moved to provide mechanical agitation to the dispenser for mixing the bonding adhesive into a homogeneous mixture of particles and the liquid carrier, wherein the bonding adhesive is not dispensed during moving. After the moving, the bonding adhesive is dispensed onto a bonding location on the workpiece without removing the dispenser from the die attach apparatus. An integrated circuit (IC) die is attached onto the bonding adhesive over the bonding location. The method can also include determining an amount of time elapsed after the last mixing of the bonding adhesive or the positioning of the dispenser in the die bonding apparatus, and automatically initiating movement for mixing only if the elapsed time exceeds a predetermined time.
摘要:
A method and apparatus for dispensing a volume of die attach adhesive onto a surface can include an optical system which images the dispensed volume of die attach adhesive. A two-dimensional area covered by the die attach adhesive and a die attach dispense pressure can be used as a comparison with a reference value to determine whether the volume of die attach adhesive dispensed is sufficient. The reference value can take into account viscosity changes of the die attach adhesive, so that the volume of die attach adhesive dispensed during production can be determined. The volume dispensed can be automatically adjusted in situ during production using a computer system.
摘要:
A method for die bonding includes positioning a dispenser in a die bonding apparatus, wherein the dispenser includes a reservoir having bonding adhesive therein including particles and a liquid carrier. The dispenser is moved to provide mechanical agitation to the dispenser for mixing the bonding adhesive into a homogeneous mixture of particles and the liquid carrier, wherein the bonding adhesive is not dispensed during moving. After the moving, the bonding adhesive is dispensed onto a bonding location on the workpiece without removing the dispenser from the die attach apparatus. An integrated circuit (IC) die is attached onto the bonding adhesive over the bonding location. The method can also include determining an amount of time elapsed after the last mixing of the bonding adhesive or the positioning of the dispenser in the die bonding apparatus, and automatically initiating movement for mixing only if the elapsed time exceeds a predetermined time.
摘要:
A flash memory solid-state-drive (SSD) has a smart storage switch that reduces write acceleration that occurs when more data is written to flash memory than is received from the host. Page mapping rather than block mapping reduces write acceleration. Host commands are loaded into a Logical-Block-Address (LBA) range FIFO. Entries are sub-divided and portions invalidated when a new command overlaps an older command in the FIFO. Host data is aligned to page boundaries with pre- and post-fetched data filling in to the boundaries. Repeated data patterns are detected and encoded by compressed meta-data codes that are stored in meta-pattern entries in a meta-pattern cache of a meta-pattern flash block. The sector data is not written to flash. The meta-pattern entries are located using a meta-data mapping table. Storing host CRC's for comparison to incoming host data can detect identical data writes that can be skipped, avoiding a write to flash.
摘要:
A flash module has raw-NAND flash memory chips accessed over a physical-block address (PBA) bus by a NVM controller. The NVM controller is on the flash module or on a system board for a solid-state disk (SSD). The NVM controller converts logical block addresses (LBA) to physical block addresses (PBA). Data striping and interleaving among multiple channels of the flash modules is controlled at a high level by a smart storage transaction manager, while further interleaving and remapping within a channel may be performed by the NVM controllers. A SDRAM buffer is used by a smart storage switch to cache host data before writing to flash memory. A Q-R pointer table stores quotients and remainders of division of the host address. The remainder points to a location of the host data in the SDRAM. A command queue stores Q, R for host commands.
摘要:
A flash microcontroller has a Static Random-Access-Memory (SRAM) buffer that stores several blocks of boot code read from a flash memory. The SRAM buffer also operates as a cache of flash data after booting is complete. Cache read and write hits use the SRAM cache rather than flash memory, while old cache lines and read misses access the flash memory. Both the external host and the microcontroller are booted from boot code buffered in the SRAM buffer. A boot-loader state machine reads the flash ID and programs flash parameter registers with timing parameters for the flash memory. The flash microcontroller uses a differential interface to the external host, with a differential transceiver and a differential serial interface. Frame, packet, and encoded clock processing is also performed by the serial interface.
摘要:
Phase-change memory (PCM) cells store data using alloy resistors in high-resistance amorphous and low-resistance crystalline states. The time of the memory cell's set-current pulse can be 100 ns, much longer than read or reset times. The write time thus depends on the write data and is relatively long. A page-mode caching PCM device has a lookup table (LUT) that caches write data that is later written to an array of PCM banks. Host data is latched into a line FIFO and written into the LUT, reducing write delays to the relatively slow PCM. Host read data can be supplied by the LUT or fetched from the PCM banks. A multi-line page buffer between the PCM banks and LUT allows for larger block transfers using the LUT. Error-correction code (ECC) checking and generation is performed for data in the LUT, hiding ECC delays for data writes into the PCM banks.
摘要:
A solid-state disk (SSD) has a smart storage switch with a smart storage transaction manager that re-orders host commands for accessing downstream single-chip flash-memory devices. Each single-chip flash-memory device has a lower-level controller that converts logical block addresses (LBA) to physical block addresses (PBA) that access flash memory blocks in the single-chip flash-memory device. Wear-leveling and bad block remapping are preformed by each single-chip flash-memory device, and at a higher level by a virtual storage processor in the smart storage switch. Virtual storage bridges between the smart storage transaction manager and the single-chip flash-memory devices bridge LBA transactions over LBA buses to the single-chip flash-memory devices. Data striping and interleaving among multiple channels of the single-chip flash-memory device is controlled at a high level by the smart storage transaction manager, while further interleaving and remapping may be performed within each single-chip flash-memory device.